Dr. Manfred Ramsteiner

Nanostructuring of conduction channels in (In,Ga)As-InP heterostructures: Overcoming carrier generation caused by Ar ion milling

@article{ author = { V. Hortelano and H. Weidlich and M.P. Semtsiv and W. T. Masselink and M. Ramsteiner and U. Jahn and K. Biermann and Y. Takagaki }, title = { Nanostructuring of conduction channels in (In,Ga)As-InP heterostructures: Overcoming carrier generation caused by Ar ion milling }, journal = { Applied Physics Letters }, volume = { 112 }, year = { 2018 }, pages = { 151602 } }

TY - JOUR AU - V. Hortelano AU - H. Weidlich AU - M.P. Semtsiv AU - W. T. Masselink AU - M. Ramsteiner AU - U. Jahn AU - K. Biermann AU - Y. Takagaki TI - Nanostructuring of conduction channels in (In,Ga)As-InP heterostructures: Overcoming carrier generation caused by Ar ion milling JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 112 SP - 151602 PY - 2018/04/10

Plasma-assisted molecular beam epitaxy of GaN nanowires on epitaxial single-layer graphene

@article{ author = { S. Fernández-Garrido and M. Ramsteiner and L. A. Galves and C. Sinito and J. M. J. Lopes and L. Geelhaar and O. Brandt }, title = { Plasma-assisted molecular beam epitaxy of GaN nanowires on epitaxial single-layer graphene }, journal = { Proceedings of SPIE }, volume = { 10532 }, year = { 2018 }, pages = { 105321U } }

TY - JOUR AU - S. Fernández-Garrido AU - M. Ramsteiner AU - L. A. Galves AU - C. Sinito AU - J. M. J. Lopes AU - L. Geelhaar AU - O. Brandt TI - Plasma-assisted molecular beam epitaxy of GaN nanowires on epitaxial single-layer graphene JF - Proceedings of SPIE JA - Proc. SPIE J1 - VL - 10532 SP - 105321U PY - 2018/02/23

Doping of Self-Catalyzed Nanowires under the Influence of Droplets

@article{ author = { Yunyan Zhang and Zhiyuan Sun and Ana Sanchez and M. Ramsteiner and Martin Aagesen and Jiang Wu and Dongyoung Kim and Pamela Jurczak and Suguo Huo and Lincoln Lauhon and Huiyun Liu }, title = { Doping of Self-Catalyzed Nanowires under the Influence of Droplets }, journal = { Nano Letters }, volume = { 18 }, year = { 2018 }, pages = { 81 } }

TY - JOUR AU - Yunyan Zhang AU - Zhiyuan Sun AU - Ana Sanchez AU - M. Ramsteiner AU - Martin Aagesen AU - Jiang Wu AU - Dongyoung Kim AU - Pamela Jurczak AU - Suguo Huo AU - Lincoln Lauhon AU - Huiyun Liu TI - Doping of Self-Catalyzed Nanowires under the Influence of Droplets JF - Nano Letters JA - Nano Lett. J1 - VL - 18 SP - 81 PY - 2018/01/10

Bias-dependent electrical spin generation in Fe3Si / GaAs: Consistent behavior in the nonlocal, local, and the three-terminal configuration

@article{ author = { Y. Manzke and J. Herfort and M. Ramsteiner }, title = { Bias-dependent electrical spin generation in Fe3Si / GaAs: Consistent behavior in the nonlocal, local, and the three-terminal configuration }, journal = { Physical Review B: Solid State }, volume = { 96 }, year = { 2017 }, pages = { 245308 } }

TY - JOUR AU - Y. Manzke AU - J. Herfort AU - M. Ramsteiner TI - Bias-dependent electrical spin generation in Fe3Si / GaAs: Consistent behavior in the nonlocal, local, and the three-terminal configuration JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 96 SP - 245308 PY - 2017/12/26

Effect of substrate roughness, chemical composition, and native oxide crystallinity on the orientation of self-assembled GaN nanowires on Ti foils

@article{ author = { G. Calabrese and S. V. Pettersen and C. Pfüller and M. Ramsteiner and J. Grepstad and O. Brandt and L. Geelhaar and S. Fernández-Garrido }, title = { Effect of substrate roughness, chemical composition, and native oxide crystallinity on the orientation of self-assembled GaN nanowires on Ti foils }, journal = { Nanotechnology }, volume = { 28 }, year = { 2017 }, pages = { 425602 } }

TY - JOUR AU - G. Calabrese AU - S. V. Pettersen AU - C. Pfüller AU - M. Ramsteiner AU - J. Grepstad AU - O. Brandt AU - L. Geelhaar AU - S. Fernández-Garrido TI - Effect of substrate roughness, chemical composition, and native oxide crystallinity on the orientation of self-assembled GaN nanowires on Ti foils JF - Nanotechnology JA - Nanotechnology J1 - NAN VL - 28 SP - 425602 PY - 2017/09/20

Molecular Beam Epitaxy of GaN Nanowires on Epitaxial Graphene

@article{ author = { S. Fernández-Garrido and M. Ramsteiner and G. Gao and L. A. Galves and Bharat Sharma and P. Corfdir and G. Calabrese and Z. de Souza Schiaber and C. Pfüller and A. Trampert and J. M. J. Lopes and O. Brandt and L. Geelhaar }, title = { Molecular Beam Epitaxy of GaN Nanowires on Epitaxial Graphene }, journal = { Nano Letters }, volume = { 17 }, year = { 2017 }, pages = { 5213 } }

TY - JOUR AU - S. Fernández-Garrido AU - M. Ramsteiner AU - G. Gao AU - L. A. Galves AU - Bharat Sharma AU - P. Corfdir AU - G. Calabrese AU - Z. de Souza Schiaber AU - C. Pfüller AU - A. Trampert AU - J. M. J. Lopes AU - O. Brandt AU - L. Geelhaar TI - Molecular Beam Epitaxy of GaN Nanowires on Epitaxial Graphene JF - Nano Letters JA - Nano Lett. J1 - VL - 17 SP - 5213 PY - 2017/09/13

Modelling the electronic properties of GaAs polytype nanostructures: impact of strain on the conduction band character

@article{ author = { O. Marquardt and M. Ramsteiner and P. Corfdir and L. Geelhaar and O. Brandt }, title = { Modelling the electronic properties of GaAs polytype nanostructures: impact of strain on the conduction band character }, journal = { Physical Review B: Solid State }, volume = { 95 }, year = { 2017 }, pages = { 245309 } }

TY - JOUR AU - O. Marquardt AU - M. Ramsteiner AU - P. Corfdir AU - L. Geelhaar AU - O. Brandt TI - Modelling the electronic properties of GaAs polytype nanostructures: impact of strain on the conduction band character JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 95 SP - 245309 PY - 2017/06/13

A hybrid MBE-based growth method for large-area synthesis of stacked hexagonal boron nitride/graphene heterostructures

@article{ author = { J. M. Wofford and S. Nakhaie and T. Krause and X. Liu and M. Ramsteiner and M. Hanke and H. Riechert and J. M. J. Lopes }, title = { A hybrid MBE-based growth method for large-area synthesis of stacked hexagonal boron nitride/graphene heterostructures }, journal = { Scientific Reports }, volume = { 7 }, year = { 2017 }, pages = { 43644 } }

TY - JOUR AU - J. M. Wofford AU - S. Nakhaie AU - T. Krause AU - X. Liu AU - M. Ramsteiner AU - M. Hanke AU - H. Riechert AU - J. M. J. Lopes TI - A hybrid MBE-based growth method for large-area synthesis of stacked hexagonal boron nitride/graphene heterostructures JF - Scientific Reports JA - Sci. Rep. J1 - SREP VL - 7 SP - 43644 PY - 2017/02/27

Axiotaxy of bismuth telluride films on InP(111)B by high-temperature hot wall epitaxy

@article{ author = { Y. Takagaki and B. Jenichen and M. Ramsteiner and U. Jahn }, title = { Axiotaxy of bismuth telluride films on InP(111)B by high-temperature hot wall epitaxy }, journal = { Crystal Growth & Design }, volume = { 17 }, year = { 2017 }, pages = { 1977 } }

TY - JOUR AU - Y. Takagaki AU - B. Jenichen AU - M. Ramsteiner AU - U. Jahn TI - Axiotaxy of bismuth telluride films on InP(111)B by high-temperature hot wall epitaxy JF - Crystal Growth & Design JA - Cryst. Growth Des. J1 - VL - 17 SP - 1977 PY - 2017/02/22

Characterization of phosphorus compounds in soils by deep ultraviolet (DUV) Raman microspectroscopy

@article{ author = { C. Vogel and M. Ramsteiner and R. Sekine and A. Doolette and C. Adam }, title = { Characterization of phosphorus compounds in soils by deep ultraviolet (DUV) Raman microspectroscopy }, journal = { Journal of Raman Spectroscopy }, volume = { 48 }, year = { 2017 }, pages = { 867 } }

TY - JOUR AU - C. Vogel AU - M. Ramsteiner AU - R. Sekine AU - A. Doolette AU - C. Adam TI - Characterization of phosphorus compounds in soils by deep ultraviolet (DUV) Raman microspectroscopy JF - Journal of Raman Spectroscopy JA - J. Raman Spectrosc. J1 - VL - 48 SP - 867 PY - 2017/02/10