Dr. Vladimir Kaganer

Determination of the Carrier Diffusion Length in GaN from Cathodoluminescence Maps Around Threading Dislocations: Fallacies and Opportunities

@article{ author = { V. M. Kaganer and J. Lähnemann and C. Pfüller and K. Sabelfeld and A. Kireeva and O. Brandt }, title = { Determination of the Carrier Diffusion Length in GaN from Cathodoluminescence Maps Around Threading Dislocations: Fallacies and Opportunities }, journal = { Physical Review Applied }, volume = { 12 }, year = { 2019 }, pages = { 054038 } }

TY - JOUR AU - V. M. Kaganer AU - J. Lähnemann AU - C. Pfüller AU - K. Sabelfeld AU - A. Kireeva AU - O. Brandt TI - Determination of the Carrier Diffusion Length in GaN from Cathodoluminescence Maps Around Threading Dislocations: Fallacies and Opportunities JF - Physical Review Applied JA - Phys. Rev. Applied J1 - VL - 12 SP - 054038 PY - 2019/11/15

Diffraction properties of a strongly bent diamond crystal used as a dispersive spectrometer for XFEL pulses

@article{ author = { L. Samoylova and U. Boesenberg and A. Chumakov and V. M. Kaganer and I. Petrov and T. Roth and R. Rüffer and H. Sinn and S. Terentyev and A. Madsen }, title = { Diffraction properties of a strongly bent diamond crystal used as a dispersive spectrometer for XFEL pulses }, journal = { Journal of Synchrotron Radiation }, volume = { 26 }, year = { 2019 }, pages = { 1069 } }

TY - JOUR AU - L. Samoylova AU - U. Boesenberg AU - A. Chumakov AU - V. M. Kaganer AU - I. Petrov AU - T. Roth AU - R. Rüffer AU - H. Sinn AU - S. Terentyev AU - A. Madsen TI - Diffraction properties of a strongly bent diamond crystal used as a dispersive spectrometer for XFEL pulses JF - Journal of Synchrotron Radiation JA - J. Synchrotron Rad. J1 - JSR VL - 26 SP - 1069 PY - 2019/07/01

Piezoelectric field, exciton lifetime, and cathodoluminescence intensity at threading dislocations in GaN{0001}

@article{ author = { V. M. Kaganer and K. K. Sabelfeld and O. Brandt }, title = { Piezoelectric field, exciton lifetime, and cathodoluminescence intensity at threading dislocations in GaN{0001} }, journal = { Applied Physics Letters }, volume = { 112 }, year = { 2018 }, pages = { 122101 } }

TY - JOUR AU - V. M. Kaganer AU - K. K. Sabelfeld AU - O. Brandt TI - Piezoelectric field, exciton lifetime, and cathodoluminescence intensity at threading dislocations in GaN{0001} JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 112 SP - 122101 PY - 2018/03/19

Self-Assembled Formation of Long, Thin, and Uncoalesced GaN Nanowires on Crystalline TiN Films

@article{ author = { D. v. Treeck and G. Calabrese and J. Goertz and V. M. Kaganer and O. Brandt and S. Fernández-Garrido and L. Geelhaar }, title = { Self-Assembled Formation of Long, Thin, and Uncoalesced GaN Nanowires on Crystalline TiN Films }, journal = { Nano Research }, volume = { 11, Issue 1 }, year = { 2018 }, pages = { 565 } }

TY - JOUR AU - D. v. Treeck AU - G. Calabrese AU - J. Goertz AU - V. M. Kaganer AU - O. Brandt AU - S. Fernández-Garrido AU - L. Geelhaar TI - Self-Assembled Formation of Long, Thin, and Uncoalesced GaN Nanowires on Crystalline TiN Films JF - Nano Research JA - Nano Res. J1 - VL - 11, Issue 1 SP - 565 PY - 2018/01/01

Chapter: Semiconductor nanowires, in: Handbook of optoelectronic device modeling and simulation

@article{ author = { O. Marquardt and V. M. Kaganer and P. Corfdir }, title = { Chapter: Semiconductor nanowires, in: Handbook of optoelectronic device modeling and simulation }, journal = { Taylor and Francis Books }, volume = { I }, year = { 2017 }, pages = { 397 } }

TY - JOUR AU - O. Marquardt AU - V. M. Kaganer AU - P. Corfdir TI - Chapter: Semiconductor nanowires, in: Handbook of optoelectronic device modeling and simulation JF - Taylor and Francis Books JA - J1 - VL - I SP - 397 PY - 2017/10/06

Bunches of misfit dislocations on the onset of relaxation of Si_{0.4} Ge_{0.6} /Si(001) epitaxial films revealed by high-resolution x-ray diffraction

@article{ author = { V. M. Kaganer and T. Ulyanenkova and A. Benediktovitch and M. myronov and A. Ulyanenkov }, title = { Bunches of misfit dislocations on the onset of relaxation of Si_{0.4} Ge_{0.6} /Si(001) epitaxial films revealed by high-resolution x-ray diffraction }, journal = { Journal of Applied Physics }, volume = { 122 }, year = { 2017 }, pages = { 105302 } }

TY - JOUR AU - V. M. Kaganer AU - T. Ulyanenkova AU - A. Benediktovitch AU - M. myronov AU - A. Ulyanenkov TI - Bunches of misfit dislocations on the onset of relaxation of Si_{0.4} Ge_{0.6} /Si(001) epitaxial films revealed by high-resolution x-ray diffraction JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 122 SP - 105302 PY - 2017/09/12

Dislocation contrast in cathodoluminescence and electron-beam induced current maps on GaN(0001)

@article{ author = { K. K. Sabelfeld and V. M. Kaganer and C. Pfüller and O. Brandt }, title = { Dislocation contrast in cathodoluminescence and electron-beam induced current maps on GaN(0001) }, journal = { Journal of Physics D: Applied Physics }, volume = { 50 }, year = { 2017 }, pages = { 405101 } }

TY - JOUR AU - K. K. Sabelfeld AU - V. M. Kaganer AU - C. Pfüller AU - O. Brandt TI - Dislocation contrast in cathodoluminescence and electron-beam induced current maps on GaN(0001) JF - Journal of Physics D: Applied Physics JA - J. Phys. D J1 - JPD VL - 50 SP - 405101 PY - 2017/09/11

Ga-Polar (In,Ga)N/GaN Quantum Wells Versus N-Polar (In,Ga)N Quantum Disks in GaN Nanowires: A Comparative Analysis of Carrier Recombination, Diffusion, and Radiative Efficiency

@article{ author = { F. Feix and T. Flissikowski and K. K. Sabelfeld and V. M. Kaganer and M. Wölz and L. Geelhaar and H. T. Grahn and O. Brandt }, title = { Ga-Polar (In,Ga)N/GaN Quantum Wells Versus N-Polar (In,Ga)N Quantum Disks in GaN Nanowires: A Comparative Analysis of Carrier Recombination, Diffusion, and Radiative Efficiency }, journal = { Physical Review Applied }, volume = { 8 }, year = { 2017 }, pages = { 014032 } }

TY - JOUR AU - F. Feix AU - T. Flissikowski AU - K. K. Sabelfeld AU - V. M. Kaganer AU - M. Wölz AU - L. Geelhaar AU - H. T. Grahn AU - O. Brandt TI - Ga-Polar (In,Ga)N/GaN Quantum Wells Versus N-Polar (In,Ga)N Quantum Disks in GaN Nanowires: A Comparative Analysis of Carrier Recombination, Diffusion, and Radiative Efficiency JF - Physical Review Applied JA - Phys. Rev. Applied J1 - VL - 8 SP - 014032 PY - 2017/07/27

Influence of strain relaxation in axial (In,Ga)N/GaN nanowire heterostructures on their electronic properties

@article{ author = { O. Marquardt and T. Krause and V. M. Kaganer and J. Martin-Sanchez and M. Hanke and O. Brandt }, title = { Influence of strain relaxation in axial (In,Ga)N/GaN nanowire heterostructures on their electronic properties }, journal = { Nanotechnology }, volume = { 28 }, year = { 2017 }, pages = { 215204 } }

TY - JOUR AU - O. Marquardt AU - T. Krause AU - V. M. Kaganer AU - J. Martin-Sanchez AU - M. Hanke AU - O. Brandt TI - Influence of strain relaxation in axial (In,Ga)N/GaN nanowire heterostructures on their electronic properties JF - Nanotechnology JA - Nanotechnol. J1 - NAN VL - 28 SP - 215204 PY - 2017/05/04

Elastic vs. plastic strain relaxation in coalesced GaN nanowires: an x-ray diffraction study

@article{ author = { V. M. Kaganer and B. Jenichen and O. Brandt }, title = { Elastic vs. plastic strain relaxation in coalesced GaN nanowires: an x-ray diffraction study }, journal = { Physical Review Applied }, volume = { 6 }, year = { 2016 }, pages = { 064023 } }

TY - JOUR AU - V. M. Kaganer AU - B. Jenichen AU - O. Brandt TI - Elastic vs. plastic strain relaxation in coalesced GaN nanowires: an x-ray diffraction study JF - Physical Review Applied JA - Phys. Rev. Applied J1 - VL - 6 SP - 064023 PY - 2016/12/29