Senior Scientist
Project Leader
Telefon: +49 30 20377 486
Raum: 0520
Email: kaganer@pdi-berlin.de
Abteilung: Microstructure
Core research areas: Nanoanalytics , III-V nanowires for optoelectronics
1 | Autor | V. M. Kaganer , J. Lähnemann , C. Pfüller , K. Sabelfeld , A. Kireeva , O. Brandt |
Titel |
Determination of the Carrier Diffusion Length in GaN from Cathodoluminescence Maps Around Threading Dislocations: Fallacies and Opportunities |
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Source | Phys. Rev. Applied , 12 , 054038 ( 2019 ) | |
DOI : 10.1103/PhysRevApplied.12.054038 | arxiv: 1906.05645 | Cite : Bibtex RIS |
2 | Autor | L. Samoylova , U. Boesenberg , A. Chumakov , V. M. Kaganer , I. Petrov , T. Roth , R. Rüffer , H. Sinn , S. Terentyev , A. Madsen |
Titel |
Diffraction properties of a strongly bent diamond crystal used as a dispersive spectrometer for XFEL pulses |
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Source | J. Synchrotron Rad. , 26 , 1069 ( 2019 ) | |
DOI : 10.1107/S1600577519004880 | Download: PDF | Cite : Bibtex RIS |
3 | Autor | V. M. Kaganer , K. K. Sabelfeld , O. Brandt |
Titel |
Piezoelectric field, exciton lifetime, and cathodoluminescence intensity at threading dislocations in GaN{0001} |
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Source | Appl. Phys. Lett. , 112 , 122101 ( 2018 ) | |
DOI : 10.1063/1.5022170 | Download: PDF | Cite : Bibtex RIS |
4 | Autor | D. v. Treeck , G. Calabrese , J. Goertz , V. M. Kaganer , O. Brandt , S. Fernández-Garrido , L. Geelhaar |
Titel |
Self-Assembled Formation of Long, Thin, and Uncoalesced GaN Nanowires on Crystalline TiN Films |
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Source | Nano Res. , 11, Issue 1 , 565 ( 2018 ) | |
DOI : 10.1007/s12274-017-1717-x | Cite : Bibtex RIS |
5 | Autor | O. Marquardt , V. M. Kaganer , P. Corfdir |
Titel |
Chapter: Semiconductor nanowires, in: Handbook of optoelectronic device modeling and simulation |
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Source | Taylor and Francis Books , I , 397 ( 2017 ) | |
DOI : ISBN-13: 978-1-4987-4946-6 | Cite : Bibtex RIS |
6 | Autor | V. M. Kaganer , T. Ulyanenkova , A. Benediktovitch , M. myronov , A. Ulyanenkov |
Titel |
Bunches of misfit dislocations on the onset of relaxation of Si_{0.4} Ge_{0.6} /Si(001) epitaxial films revealed by high-resolution x-ray diffraction |
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Source | J. Appl. Phys. , 122 , 105302 ( 2017 ) | |
DOI : 10.1063/1.4990135 | Download: PDF | Cite : Bibtex RIS |
7 | Autor | K. K. Sabelfeld , V. M. Kaganer , C. Pfüller , O. Brandt |
Titel |
Dislocation contrast in cathodoluminescence and electron-beam induced current maps on GaN(0001) |
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Source | J. Phys. D , 50 , 405101 ( 2017 ) | |
DOI : 10.1088/1361-6463/aa85c8 | arxiv: 1611.06895 | Cite : Bibtex RIS |
8 | Autor | F. Feix , T. Flissikowski , K. K. Sabelfeld , V. M. Kaganer , M. Wölz , L. Geelhaar , H. T. Grahn , O. Brandt |
Titel |
Ga-Polar (In,Ga)N/GaN Quantum Wells Versus N-Polar (In,Ga)N Quantum Disks in GaN Nanowires: A Comparative Analysis of Carrier Recombination, Diffusion, and Radiative Efficiency |
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Source | Phys. Rev. Applied , 8 , 014032 ( 2017 ) | |
DOI : 10.1103/PhysRevApplied.8.014032 | arxiv: 1703.06715 | Cite : Bibtex RIS |
9 | Autor | O. Marquardt , T. Krause , V. M. Kaganer , J. Martin-Sanchez , M. Hanke , O. Brandt |
Titel |
Influence of strain relaxation in axial (In,Ga)N/GaN nanowire heterostructures on their electronic properties |
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Source | Nanotechnol. , 28 , 215204 ( 2017 ) | |
DOI : 10.1088/1361-6528/aa6b73 | arxiv: 1608.07047 | Cite : Bibtex RIS |
10 | Autor | V. M. Kaganer , B. Jenichen , O. Brandt |
Titel |
Elastic vs. plastic strain relaxation in coalesced GaN nanowires: an x-ray diffraction study |
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Source | Phys. Rev. Applied , 6 , 064023 ( 2016 ) | |
DOI : 10.1103/PhysRevApplied.6.064023 | arxiv: 1608.07420 | Cite : Bibtex RIS |