Dr. Vladimir Kaganer

Carrier diffusion in GaN: A cathodoluminescence study. III: Nature of nonradiative recombination at threading dislocations

@article{ author = { J. Lähnemann and V. M. Kaganer and K. K. Sabelfeld and A. E. Kireeva and U. Jahn and C. Chèze and R. Calarco and O. Brandt }, title = { Carrier diffusion in GaN: A cathodoluminescence study. III: Nature of nonradiative recombination at threading dislocations }, journal = { Physical Review Applied }, volume = { 17 }, year = { 2022 }, pages = { 024019 } }

TY - JOUR AU - J. Lähnemann AU - V. M. Kaganer AU - K. K. Sabelfeld AU - A. E. Kireeva AU - U. Jahn AU - C. Chèze AU - R. Calarco AU - O. Brandt TI - Carrier diffusion in GaN: A cathodoluminescence study. III: Nature of nonradiative recombination at threading dislocations JF - Physical Review Applied JA - Phys. Rev. Appl. J1 - VL - 17 SP - 024019 PY - 2022/02/07

Carrier diffusion in GaN: A cathodoluminescence study. II: Ambipolar vs. exciton diffusion

@article{ author = { O. Brandt and V. M. Kaganer and J. Lähnemann and T. Flissikowski and C. Pfüller and K. K. Sabelfeld and A. E. Kireeva and C. Chèze and R. Calarco and H. T. Grahn and U. Jahn }, title = { Carrier diffusion in GaN: A cathodoluminescence study. II: Ambipolar vs. exciton diffusion }, journal = { Physical Review Applied }, volume = { 17 }, year = { 2022 }, pages = { 024018 } }

TY - JOUR AU - O. Brandt AU - V. M. Kaganer AU - J. Lähnemann AU - T. Flissikowski AU - C. Pfüller AU - K. K. Sabelfeld AU - A. E. Kireeva AU - C. Chèze AU - R. Calarco AU - H. T. Grahn AU - U. Jahn TI - Carrier diffusion in GaN: A cathodoluminescence study. II: Ambipolar vs. exciton diffusion JF - Physical Review Applied JA - Phys. Rev. Appl. J1 - VL - 17 SP - 024018 PY - 2022/02/07

Carrier diffusion in GaN: A cathodoluminescence study. I: Temperature-dependent generation volume

@article{ author = { U. Jahn and V. M. Kaganer and K. K. Sabelfeld and A. E. Kireeva and J. Lähnemann and C. Pfüller and C. Chèze and K. Biermann and R. Calarco and O. Brandt }, title = { Carrier diffusion in GaN: A cathodoluminescence study. I: Temperature-dependent generation volume }, journal = { Physical Review Applied }, volume = { 17 }, year = { 2022 }, pages = { 024017 } }

TY - JOUR AU - U. Jahn AU - V. M. Kaganer AU - K. K. Sabelfeld AU - A. E. Kireeva AU - J. Lähnemann AU - C. Pfüller AU - C. Chèze AU - K. Biermann AU - R. Calarco AU - O. Brandt TI - Carrier diffusion in GaN: A cathodoluminescence study. I: Temperature-dependent generation volume JF - Physical Review Applied JA - Phys. Rev. Appl. J1 - VL - 17 SP - 024017 PY - 2022/02/07

Cross-sectional shape evolution of GaN nanowires during molecular beam epitaxy growth on Si(111)

@article{ author = { R. Volkov and N. Borgardt and O. Konovalov and S. Fernández-Garrido and O. Brandt and V. M. Kaganer }, title = { Cross-sectional shape evolution of GaN nanowires during molecular beam epitaxy growth on Si(111) }, journal = { Nanoscale Advances }, volume = { 4 }, year = { 2022 }, pages = { 562 } }

TY - JOUR AU - R. Volkov AU - N. Borgardt AU - O. Konovalov AU - S. Fernández-Garrido AU - O. Brandt AU - V. M. Kaganer TI - Cross-sectional shape evolution of GaN nanowires during molecular beam epitaxy growth on Si(111) JF - Nanoscale Advances JA - Nanoscale Adv. J1 - VL - 4 SP - 562 PY - 2022/01/18

Resolution of a bent-crystal spectrometer for X-ray free electron laser pulses: diamond vs. silicon

@article{ author = { V. M. Kaganer and I. Petrov and L.Samoylova }, title = { Resolution of a bent-crystal spectrometer for X-ray free electron laser pulses: diamond vs. silicon }, journal = { Acta Crystallographica A }, volume = { 77 }, year = { 2021 }, pages = { 268 } }

TY - JOUR AU - V. M. Kaganer AU - I. Petrov AU - L.Samoylova TI - Resolution of a bent-crystal spectrometer for X-ray free electron laser pulses: diamond vs. silicon JF - Acta Crystallographica A JA - Acta Cryst. A J1 - VL - 77 SP - 268 PY - 2021/06/29

Small-angle X-ray scattering from GaN nanowires on Si(111): facet truncation rods, facet roughness, and Porod’s law

@article{ author = { V. M. Kaganer and O. V. Konovalov and S. Fernández-Garrido }, title = { Small-angle X-ray scattering from GaN nanowires on Si(111): facet truncation rods, facet roughness, and Porod’s law }, journal = { Acta Crystallographica A }, volume = { 77 }, year = { 2021 }, pages = { 42 } }

TY - JOUR AU - V. M. Kaganer AU - O. V. Konovalov AU - S. Fernández-Garrido TI - Small-angle X-ray scattering from GaN nanowires on Si(111): facet truncation rods, facet roughness, and Porod’s law JF - Acta Crystallographica A JA - Acta Cryst. A J1 - VL - 77 SP - 42 PY - 2021/01/04

Radius-Dependent Homogeneous Strain in Uncoalesced GaN Nanowires

@article{ author = { G. Calabrese and D. van Treeck and V. M. Kaganer and O. Konovalov and P. Corfdir and C. Sinito and L. Geelhaar and O. Brandt and S. Fernández-Garrido }, title = { Radius-Dependent Homogeneous Strain in Uncoalesced GaN Nanowires }, journal = { Acta Materialia }, volume = { 195 }, year = { 2020 }, pages = { 87 } }

TY - JOUR AU - G. Calabrese AU - D. van Treeck AU - V. M. Kaganer AU - O. Konovalov AU - P. Corfdir AU - C. Sinito AU - L. Geelhaar AU - O. Brandt AU - S. Fernández-Garrido TI - Radius-Dependent Homogeneous Strain in Uncoalesced GaN Nanowires JF - Acta Materialia JA - Acta Mat. J1 - VL - 195 SP - 87 PY - 2020/05/15

X-ray diffraction from strongly bent crystals and spectroscopy of XFEL pulses

@article{ author = { V. M. Kaganer and I. Petrov and L. Samoylova }, title = { X-ray diffraction from strongly bent crystals and spectroscopy of XFEL pulses }, journal = { Acta Crystallographica A }, volume = { 76 }, year = { 2019 }, pages = { 55 } }

TY - JOUR AU - V. M. Kaganer AU - I. Petrov AU - L. Samoylova TI - X-ray diffraction from strongly bent crystals and spectroscopy of XFEL pulses JF - Acta Crystallographica A JA - Acta Cryst. A J1 - VL - 76 SP - 55 PY - 2019/12/20

Determination of the Carrier Diffusion Length in GaN from Cathodoluminescence Maps Around Threading Dislocations: Fallacies and Opportunities

@article{ author = { V. M. Kaganer and J. Lähnemann and C. Pfüller and K. K. Sabelfeld and A. E. Kireeva and O. Brandt }, title = { Determination of the Carrier Diffusion Length in GaN from Cathodoluminescence Maps Around Threading Dislocations: Fallacies and Opportunities }, journal = { Physical Review Applied }, volume = { 12 }, year = { 2019 }, pages = { 054038 } }

TY - JOUR AU - V. M. Kaganer AU - J. Lähnemann AU - C. Pfüller AU - K. K. Sabelfeld AU - A. E. Kireeva AU - O. Brandt TI - Determination of the Carrier Diffusion Length in GaN from Cathodoluminescence Maps Around Threading Dislocations: Fallacies and Opportunities JF - Physical Review Applied JA - Phys. Rev. Appl. J1 - VL - 12 SP - 054038 PY - 2019/11/15

Diffraction properties of a strongly bent diamond crystal used as a dispersive spectrometer for XFEL pulses

@article{ author = { L. Samoylova and U. Boesenberg and A. Chumakov and V. M. Kaganer and I. Petrov and T. Roth and R. Rüffer and H. Sinn and S. Terentyev and A. Madsen }, title = { Diffraction properties of a strongly bent diamond crystal used as a dispersive spectrometer for XFEL pulses }, journal = { Journal of Synchrotron Radiation }, volume = { 26 }, year = { 2019 }, pages = { 1069 } }

TY - JOUR AU - L. Samoylova AU - U. Boesenberg AU - A. Chumakov AU - V. M. Kaganer AU - I. Petrov AU - T. Roth AU - R. Rüffer AU - H. Sinn AU - S. Terentyev AU - A. Madsen TI - Diffraction properties of a strongly bent diamond crystal used as a dispersive spectrometer for XFEL pulses JF - Journal of Synchrotron Radiation JA - J. Synchrotron Rad. J1 - JSR VL - 26 SP - 1069 PY - 2019/07/01