Dr. Esperanza Luna García de la Infanta

Increasing Optical Efficiency in the Telecommunication Bands of Strain-Engineered Ga(As,Bi) alloys

@article{ author = { E. Tisbi and E. Placidi and R. Magri and P. Prosposito and R. Francini and A. Zaganelli and S. Cecchi and E. Zallo and R. Calarco and E. Luna and J. Honolka and M. Vondracek and S. Colonna and F. Arciprete }, title = { Increasing Optical Efficiency in the Telecommunication Bands of Strain-Engineered Ga(As,Bi) alloys }, journal = { Physical Review Applied }, volume = { 14 }, year = { 2020 }, pages = { 014028 } }

TY - JOUR AU - E. Tisbi AU - E. Placidi AU - R. Magri AU - P. Prosposito AU - R. Francini AU - A. Zaganelli AU - S. Cecchi AU - E. Zallo AU - R. Calarco AU - E. Luna AU - J. Honolka AU - M. Vondracek AU - S. Colonna AU - F. Arciprete TI - Increasing Optical Efficiency in the Telecommunication Bands of Strain-Engineered Ga(As,Bi) alloys JF - Physical Review Applied JA - Phys. Rev. Appl. J1 - VL - 14 SP - 014028 PY - 2020/07/10

Coaxial GaAs/(In,Ga)As dot-in-a-well nanowire heterostructures for electrically driven infrared light generation on Si in the telecommunication O band

@article{ author = { J. Herranz and P. Corfdir and E. Luna and U. Jahn and R. B. Lewis and L. Schrottke and J. Lähnemann and A. Tahraoui and A. Trampert and O. Brandt and L. Geelhaar }, title = { Coaxial GaAs/(In,Ga)As dot-in-a-well nanowire heterostructures for electrically driven infrared light generation on Si in the telecommunication O band }, journal = { ACS Applied Nano Materials }, volume = { 3 }, year = { 2020 }, pages = { 165 } }

TY - JOUR AU - J. Herranz AU - P. Corfdir AU - E. Luna AU - U. Jahn AU - R. B. Lewis AU - L. Schrottke AU - J. Lähnemann AU - A. Tahraoui AU - A. Trampert AU - O. Brandt AU - L. Geelhaar TI - Coaxial GaAs/(In,Ga)As dot-in-a-well nanowire heterostructures for electrically driven infrared light generation on Si in the telecommunication O band JF - ACS Applied Nano Materials JA - ACS Appl. Nano Mater. J1 - VL - 3 SP - 165 PY - 2020/01/24

Optical properties and dynamics of excitons in Ga(Sb, Bi)/GaSb quantum wells: evidence for a regular alloy behavior

@article{ author = { E. Rogowicz and W. M. Linhart and M. Syperek and J. Kopaczek and O. Delorme and L. Cerutti and E. Luna and E. Tournie and J.-B. Rodriguez and R Kudrawiec }, title = { Optical properties and dynamics of excitons in Ga(Sb, Bi)/GaSb quantum wells: evidence for a regular alloy behavior }, journal = { Semiconductor Science and Technology }, volume = { 35 }, year = { 2020 }, pages = { 025024 } }

TY - JOUR AU - E. Rogowicz AU - W. M. Linhart AU - M. Syperek AU - J. Kopaczek AU - O. Delorme AU - L. Cerutti AU - E. Luna AU - E. Tournie AU - J.-B. Rodriguez AU - R Kudrawiec TI - Optical properties and dynamics of excitons in Ga(Sb, Bi)/GaSb quantum wells: evidence for a regular alloy behavior JF - Semiconductor Science and Technology JA - Semicond. Sci. Technol. J1 - SST VL - 35 SP - 025024 PY - 2020/01/17

Strategies for Analyzing Noncommon-Atom Heterovalent Interfaces: The Case of CdTe-on-InSb

@article{ author = { E. Luna and A. Trampert and J.Lu and T. Aoki and Y.-H. Zhang and M. R. McCartney and D. J. Smith }, title = { Strategies for Analyzing Noncommon-Atom Heterovalent Interfaces: The Case of CdTe-on-InSb }, journal = { Advanced Materials Interfaces }, volume = { 7 }, year = { 2020 }, pages = { 1901658 } }

TY - JOUR AU - E. Luna AU - A. Trampert AU - J.Lu AU - T. Aoki AU - Y.-H. Zhang AU - M. R. McCartney AU - D. J. Smith TI - Strategies for Analyzing Noncommon-Atom Heterovalent Interfaces: The Case of CdTe-on-InSb JF - Advanced Materials Interfaces JA - J1 - VL - 7 SP - 1901658 PY - 2020/01/01

Molecular-beam epitaxy of GaInSbBi alloys

@article{ author = { O. Delorme and L. Cerutti and E. Luna and A. Trampert and E. Tournie and J.-B. Rodriguez }, title = { Molecular-beam epitaxy of GaInSbBi alloys }, journal = { Journal of Applied Physics }, volume = { 126 }, year = { 2019 }, pages = { 155304 } }

TY - JOUR AU - O. Delorme AU - L. Cerutti AU - E. Luna AU - A. Trampert AU - E. Tournie AU - J.-B. Rodriguez TI - Molecular-beam epitaxy of GaInSbBi alloys JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 126 SP - 155304 PY - 2019/10/17

Bismuth-surfactant-induced growth and structure of InAs/GaAs(110) quantum dots

@article{ author = { R. B. Lewis and A. Trampert and E. Luna and J. Herranz and C. Pfüller and L. Geelhaar }, title = { Bismuth-surfactant-induced growth and structure of InAs/GaAs(110) quantum dots }, journal = { Semiconductor Science and Technology }, volume = { 34 }, year = { 2019 }, pages = { 105016 } }

TY - JOUR AU - R. B. Lewis AU - A. Trampert AU - E. Luna AU - J. Herranz AU - C. Pfüller AU - L. Geelhaar TI - Bismuth-surfactant-induced growth and structure of InAs/GaAs(110) quantum dots JF - Semiconductor Science and Technology JA - Semicond. Sci. Technol. J1 - SST VL - 34 SP - 105016 PY - 2019/09/16

Impact of Bi incorporation on the evolution of microstructure during growth of low-temperature GaAs:Bi/Ga(As,Bi) layers

@article{ author = { E. Luna and M. Wu and T. Aoki and M.R. McCartney and J. Puustinen and J. Hilska and M. Guina and D. J. Smith and A. Trampert }, title = { Impact of Bi incorporation on the evolution of microstructure during growth of low-temperature GaAs:Bi/Ga(As,Bi) layers }, journal = { Journal of Applied Physics }, volume = { 126 }, year = { 2019 }, pages = { 085305 } }

TY - JOUR AU - E. Luna AU - M. Wu AU - T. Aoki AU - M.R. McCartney AU - J. Puustinen AU - J. Hilska AU - M. Guina AU - D. J. Smith AU - A. Trampert TI - Impact of Bi incorporation on the evolution of microstructure during growth of low-temperature GaAs:Bi/Ga(As,Bi) layers JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 126 SP - 085305 PY - 2019/08/26

Axial GaAs/Ga(As,Bi) nanowire heterostructures

@article{ author = { M. Oliva and G. Gao and E. Luna and L. Geelhaar and R. B. Lewis }, title = { Axial GaAs/Ga(As,Bi) nanowire heterostructures }, journal = { Nanotechnology }, volume = { 30 }, year = { 2019 }, pages = { 425601 } }

TY - JOUR AU - M. Oliva AU - G. Gao AU - E. Luna AU - L. Geelhaar AU - R. B. Lewis TI - Axial GaAs/Ga(As,Bi) nanowire heterostructures JF - Nanotechnology JA - Nanotechnology J1 - NAN VL - 30 SP - 425601 PY - 2019/08/02

Strategic Molecular Beam Epitaxial Growth of GaAs/GaAsBi Heterostructures and Nanostructures

@article{ author = { P.K. Patil and S. Shimomura and F. Ishikawa and E. Luna and M. Yoshimoto }, title = { Strategic Molecular Beam Epitaxial Growth of GaAs/GaAsBi Heterostructures and Nanostructures }, journal = { Bismuth-Containing Alloys and Nanostructures. Springer Series in Materials Science; edited by S. Wang, P. Lu }, volume = { 285 }, year = { 2019 }, pages = { 59 } }

TY - JOUR AU - P.K. Patil AU - S. Shimomura AU - F. Ishikawa AU - E. Luna AU - M. Yoshimoto TI - Strategic Molecular Beam Epitaxial Growth of GaAs/GaAsBi Heterostructures and Nanostructures JF - Bismuth-Containing Alloys and Nanostructures. Springer Series in Materials Science; edited by S. Wang, P. Lu JA - J1 - VL - 285 SP - 59 PY - 2019/07/03

GaSbBi Alloys and Heterostructures: Fabrication and Properties

@article{ author = { O. Delorme and L. Cerutti and R. Kudrawiec and E. Luna and J. Kopaczek and M. Gladysiewicz and A. Trampert and E. Tournie and J.-B. Rodriguez }, title = { GaSbBi Alloys and Heterostructures: Fabrication and Properties }, journal = { Bismuth-Containing Alloys and Nanostructures. Springer Series in Materials Science; edited by S. Wang, P. Lu }, volume = { 285 }, year = { 2019 }, pages = { 125 } }

TY - JOUR AU - O. Delorme AU - L. Cerutti AU - R. Kudrawiec AU - E. Luna AU - J. Kopaczek AU - M. Gladysiewicz AU - A. Trampert AU - E. Tournie AU - J.-B. Rodriguez TI - GaSbBi Alloys and Heterostructures: Fabrication and Properties JF - Bismuth-Containing Alloys and Nanostructures. Springer Series in Materials Science; edited by S. Wang, P. Lu JA - J1 - VL - 285 SP - 125 PY - 2019/07/03