Senior Scientist
Telefon: +49 30 20377 281
Raum: 0621
Email: luna@pdi-berlin.de
Abteilung: Microstructure
Core research areas: Intersubband emitters , Nanoanalytics , III-V nanowires for optoelectronics
1 | Autor | E. Tisbi , E. Placidi , R. Magri , P. Prosposito , R. Francini , A. Zaganelli , S. Cecchi , E. Zallo , R. Calarco , E. Luna , J. Honolka , M. Vondracek , S. Colonna , F. Arciprete |
Titel |
Increasing Optical Efficiency in the Telecommunication Bands of Strain-Engineered Ga(As,Bi) alloys |
|
Source | Phys. Rev. Appl. , 14 , 014028 ( 2020 ) | |
DOI : 10.1103/PhysRevApplied.14.014028 | Cite : Bibtex RIS |
2 | Autor | J. Herranz , P. Corfdir , E. Luna , U. Jahn , R. B. Lewis , L. Schrottke , J. Lähnemann , A. Tahraoui , A. Trampert , O. Brandt , L. Geelhaar |
Titel |
Coaxial GaAs/(In,Ga)As dot-in-a-well nanowire heterostructures for electrically driven infrared light generation on Si in the telecommunication O band |
|
Source | ACS Appl. Nano Mater. , 3 , 165 ( 2020 ) | |
DOI : 10.1021/acsanm.9b01866 | arxiv: 1908.10134 | Cite : Bibtex RIS |
3 | Autor | E. Rogowicz , W. M. Linhart , M. Syperek , J. Kopaczek , O. Delorme , L. Cerutti , E. Luna , E. Tournie , J.-B. Rodriguez , R Kudrawiec |
Titel |
Optical properties and dynamics of excitons in Ga(Sb, Bi)/GaSb quantum wells: evidence for a regular alloy behavior |
|
Source | Semicond. Sci. Technol. , 35 , 025024 ( 2020 ) | |
DOI : 10.1088/1361-6641/ab6017 | Cite : Bibtex RIS |
4 | Autor | E. Luna , A. Trampert , J.Lu , T. Aoki , Y.-H. Zhang , M. R. McCartney , D. J. Smith |
Titel |
Strategies for Analyzing Noncommon-Atom Heterovalent Interfaces: The Case of CdTe-on-InSb |
|
Source | Advanced Materials Interfaces , 7 , 1901658 ( 2020 ) | |
DOI : 10.1002/admi.201901658 | Cite : Bibtex RIS |
5 | Autor | O. Delorme , L. Cerutti , E. Luna , A. Trampert , E. Tournie , J.-B. Rodriguez |
Titel |
Molecular-beam epitaxy of GaInSbBi alloys |
|
Source | J. Appl. Phys. , 126 , 155304 ( 2019 ) | |
DOI : 10.1063/1.5096226 | Download: PDF | Cite : Bibtex RIS |
6 | Autor | R. B. Lewis , A. Trampert , E. Luna , J. Herranz , C. Pfüller , L. Geelhaar |
Titel |
Bismuth-surfactant-induced growth and structure of InAs/GaAs(110) quantum dots |
|
Source | Semicond. Sci. Technol. , 34 , 105016 ( 2019 ) | |
DOI : 10.1088/1361-6641/ab3c23 | arxiv: 1905.05303 | Cite : Bibtex RIS |
7 | Autor | E. Luna , M. Wu , T. Aoki , M.R. McCartney , J. Puustinen , J. Hilska , M. Guina , D. J. Smith , A. Trampert |
Titel |
Impact of Bi incorporation on the evolution of microstructure during growth of low-temperature GaAs:Bi/Ga(As,Bi) layers |
|
Source | J. Appl. Phys. , 126 , 085305 ( 2019 ) | |
DOI : 10.1063/1.5111532 | Download: PDF | Cite : Bibtex RIS |
8 | Autor | M. Oliva , G. Gao , E. Luna , L. Geelhaar , R. B. Lewis |
Titel |
Axial GaAs/Ga(As,Bi) nanowire heterostructures |
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Source | Nanotechnology , 30 , 425601 ( 2019 ) | |
DOI : 10.1088/1361-6528/ab3209 | arxiv: 1903.11039 | Cite : Bibtex RIS |
9 | Autor | P.K. Patil , S. Shimomura , F. Ishikawa , E. Luna , M. Yoshimoto |
Titel |
Strategic Molecular Beam Epitaxial Growth of GaAs/GaAsBi Heterostructures and Nanostructures |
|
Source | Bismuth-Containing Alloys and Nanostructures. Springer Series in Materials Science; edited by S. Wang, P. Lu , 285 , 59 ( 2019 ) | |
DOI : 10.1007/978-981-13-8078-5_4 | Cite : Bibtex RIS |
10 | Autor | O. Delorme , L. Cerutti , R. Kudrawiec , E. Luna , J. Kopaczek , M. Gladysiewicz , A. Trampert , E. Tournie , J.-B. Rodriguez |
Titel |
GaSbBi Alloys and Heterostructures: Fabrication and Properties |
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Source | Bismuth-Containing Alloys and Nanostructures. Springer Series in Materials Science; edited by S. Wang, P. Lu , 285 , 125 ( 2019 ) | |
DOI : 10.1007/978-981-13-8078-5_6 | Cite : Bibtex RIS |