Dr. Lutz Geelhaar

Acting Director

Head of Department Epitaxy

Lutz Geelhaar

Telefon: +49 30 20377 359

Raum: 0714

Email: geelhaar@pdi-berlin.de

 

Abteilung: Epitaxy

Core research areas: Nanofabrication , III-V nanowires for optoelectronics

 

 

141 Autor Y. Takagaki , J. Herfort , M. Hilse , L. Geelhaar , H. Riechert
Titel

Swingback in magnetization reversal in MnAs-GaAs coaxial nanowire heterostructures

Source J. Phys.: Condens. Matter , 23 , 126002 ( 2011 )
2126 Cite : Bibtex RIS
Y. Takagaki, J. Herfort, M. Hilse, L. Geelhaar, and H. Riechert

142 Autor M. Hilse , Y. Takagaki , M. Ramsteiner , J. Herfort , S. Breuer , L. Geelhaar , H. Riechert
Titel

Strain in GaAs-MnAs core-shell nanowires grown by molecular beam epitaxy

Source J. Cryst. Growth , 323 , 307 ( 2011 )
2131 Cite : Bibtex RIS
M. Hilse, Y. Takagaki, M. Ramsteiner, J. Herfort, S. Breuer, L. Geelhaar, and H. Riechert

143 Autor S. Breuer , M. Hilse , L. Geelhaar , H. Riechert
Titel

Nucleation and growth of Au-assisted GaAs nanowires on GaAs(111)B and Si(111) in comparison

Source J. Cryst. Growth , 323 , 311 ( 2011 )
2134 Cite : Bibtex RIS
S. Breuer, M. Hilse, L. Geelhaar, and H. Riechert

144 Autor P. Dogan , O. Brandt , C. Pfüller , A.-K. Bluhm , L. Geelhaar , H. Riechert
Titel

GaN nanowire templates for the pendeoepitaxial coalescence overgrowth on Si(111) by molecular beam epitaxy

Source J. Cryst. Growth , 323 , 418 ( 2011 )
2154 Cite : Bibtex RIS
P. Dogan, O. Brandt, C. Pfüller, A.-K. Bluhm, L. Geelhaar, and H. Riechert

145 Autor L. Lari , T. Walther , M. H. Gass , L. Geelhaar , C. Chèze , H. Riechert , T. J. Bullough , P. R. Chalker
Titel

Direct observation by transmission electron microscopy of the influence of Ni catalyst-seeds on the growth of GaN-(Al,Ga)N axial heterostructure nanowires

Source J. Cryst. Growth , 327 , 27 ( 2011 )
2158 Cite : Bibtex RIS
L. Lari, T. Walther, M. H. Gass, L. Geelhaar, C. Chèze, H. Riechert, T. J. Bullough, and P. R. Chalker

146 Autor V. Consonni , M. Hanke , M. Knelangen , L. Geelhaar , A. Trampert , H. Riechert
Titel

Nucleation mechanisms of self-induced GaN nanowires grown on an amorphous interlayer

Source Phys. Rev. B , 83 , 035310 ( 2011 )
Download: PDF | 2159 Cite : Bibtex RIS
V. Consonni, M. Hanke, M. Knelangen, L. Geelhaar, A. Trampert, and H. Riechert

147 Autor L. Geelhaar , C. Chèze , B. Jenichen , O. Brandt , C. Pfüller , S. Münch , R. Rothemund , S. Reitzenstein , A. Forchel , Th. Kehagias , Ph. Komninou , G. P. Dimitrakopulos , Th. Karakostas , L. Lari , P. R. Chalker , M. H. Gass , H. Riechert
Titel

Properties of GaN nanowires grown by molecular beam epitaxy

Source IEEE J. Sel. Topics Quantum Electron. , 17 , 878 ( 2011 )
2160 Cite : Bibtex RIS
L. Geelhaar, C. Chèze, B. Jenichen, O. Brandt, C. Pfüller, S. Münch, R. Rothemund, S. Reitzenstein, A. Forchel, Th. Kehagias, Ph. Komninou, G. P. Dimitrakopulos, Th. Karakostas, L. Lari, P. R. Chalker, M. H. Gass, and H. Riechert

148 Autor S. Breuer , C. Pfüller , T. Flissikowski , O. Brandt , H.T. Grahn , L. Geelhaar , H. Riechert
Titel

Suitability of Au- and self-assisted GaAs nanowires for optoelectronic applications

Source Nano Lett. , 11 , 1276 ( 2011 )
2175 Cite : Bibtex RIS
S. Breuer, C. Pfüller, T. Flissikowski, O. Brandt, H.T. Grahn, L. Geelhaar, and H. Riechert

149 Autor Y. Puttisong , X. J. Wang , I. A. Buyanova , C. W. Tu , L. Geelhaar , H. Riechert , W. M. Chen
Titel

Room-temperature spin injection and spin loss across a GaNAs/GaAs interface

Source Appl. Phys. Lett. , 98 , 012112 ( 2011 )
Download: PDF | 2180 Cite : Bibtex RIS
Y. Puttisong, X. J. Wang, I. A. Buyanova, C. W. Tu, L. Geelhaar, H. Riechert, and W. M. Chen

150 Autor V. Consonni , M. Knelangen , A. Trampert , L. Geelhaar , H. Riechert
Titel

Nucleation and coalescence effects on the density of self-induced GaN nanowires grown by molecular beam epitaxy

Source Appl. Phys. Lett. , 98 , 071913 ( 2011 )
Download: PDF | 2183 Cite : Bibtex RIS
V. Consonni, M. Knelangen, A. Trampert, L. Geelhaar, and H. Riechert