Dr. Lutz Geelhaar

Swingback in magnetization reversal in MnAs-GaAs coaxial nanowire heterostructures

@article{ author = { Y. Takagaki and J. Herfort and M. Hilse and L. Geelhaar and H. Riechert }, title = { Swingback in magnetization reversal in MnAs-GaAs coaxial nanowire heterostructures }, journal = { Journal of Physics: Condensed Matter }, volume = { 23 }, year = { 2011 }, pages = { 126002 } }

TY - JOUR AU - Y. Takagaki AU - J. Herfort AU - M. Hilse AU - L. Geelhaar AU - H. Riechert TI - Swingback in magnetization reversal in MnAs-GaAs coaxial nanowire heterostructures JF - Journal of Physics: Condensed Matter JA - J. Phys.: Condens. Matter J1 - JPCM VL - 23 SP - 126002 PY - 2011/01/01

Strain in GaAs-MnAs core-shell nanowires grown by molecular beam epitaxy

@article{ author = { M. Hilse and Y. Takagaki and M. Ramsteiner and J. Herfort and S. Breuer and L. Geelhaar and H. Riechert }, title = { Strain in GaAs-MnAs core-shell nanowires grown by molecular beam epitaxy }, journal = { Journal of Crystal Growth }, volume = { 323 }, year = { 2011 }, pages = { 307 } }

TY - JOUR AU - M. Hilse AU - Y. Takagaki AU - M. Ramsteiner AU - J. Herfort AU - S. Breuer AU - L. Geelhaar AU - H. Riechert TI - Strain in GaAs-MnAs core-shell nanowires grown by molecular beam epitaxy JF - Journal of Crystal Growth JA - J. Cryst. Growth J1 - JGC VL - 323 SP - 307 PY - 2011/01/01

Nucleation and growth of Au-assisted GaAs nanowires on GaAs(111)B and Si(111) in comparison

@article{ author = { S. Breuer and M. Hilse and L. Geelhaar and H. Riechert }, title = { Nucleation and growth of Au-assisted GaAs nanowires on GaAs(111)B and Si(111) in comparison }, journal = { Journal of Crystal Growth }, volume = { 323 }, year = { 2011 }, pages = { 311 } }

TY - JOUR AU - S. Breuer AU - M. Hilse AU - L. Geelhaar AU - H. Riechert TI - Nucleation and growth of Au-assisted GaAs nanowires on GaAs(111)B and Si(111) in comparison JF - Journal of Crystal Growth JA - J. Cryst. Growth J1 - JGC VL - 323 SP - 311 PY - 2011/01/01

GaN nanowire templates for the pendeoepitaxial coalescence overgrowth on Si(111) by molecular beam epitaxy

@article{ author = { P. Dogan and O. Brandt and C. Pfüller and A.-K. Bluhm and L. Geelhaar and H. Riechert }, title = { GaN nanowire templates for the pendeoepitaxial coalescence overgrowth on Si(111) by molecular beam epitaxy }, journal = { Journal of Crystal Growth }, volume = { 323 }, year = { 2011 }, pages = { 418 } }

TY - JOUR AU - P. Dogan AU - O. Brandt AU - C. Pfüller AU - A.-K. Bluhm AU - L. Geelhaar AU - H. Riechert TI - GaN nanowire templates for the pendeoepitaxial coalescence overgrowth on Si(111) by molecular beam epitaxy JF - Journal of Crystal Growth JA - J. Cryst. Growth J1 - JGC VL - 323 SP - 418 PY - 2011/01/01

Direct observation by transmission electron microscopy of the influence of Ni catalyst-seeds on the growth of GaN-(Al,Ga)N axial heterostructure nanowires

@article{ author = { L. Lari and T. Walther and M. H. Gass and L. Geelhaar and C. Chèze and H. Riechert and T. J. Bullough and P. R. Chalker }, title = { Direct observation by transmission electron microscopy of the influence of Ni catalyst-seeds on the growth of GaN-(Al,Ga)N axial heterostructure nanowires }, journal = { Journal of Crystal Growth }, volume = { 327 }, year = { 2011 }, pages = { 27 } }

TY - JOUR AU - L. Lari AU - T. Walther AU - M. H. Gass AU - L. Geelhaar AU - C. Chèze AU - H. Riechert AU - T. J. Bullough AU - P. R. Chalker TI - Direct observation by transmission electron microscopy of the influence of Ni catalyst-seeds on the growth of GaN-(Al,Ga)N axial heterostructure nanowires JF - Journal of Crystal Growth JA - J. Cryst. Growth J1 - JGC VL - 327 SP - 27 PY - 2011/01/01

Nucleation mechanisms of self-induced GaN nanowires grown on an amorphous interlayer

@article{ author = { V. Consonni and M. Hanke and M. Knelangen and L. Geelhaar and A. Trampert and H. Riechert }, title = { Nucleation mechanisms of self-induced GaN nanowires grown on an amorphous interlayer }, journal = { Physical Review B: Solid State }, volume = { 83 }, year = { 2011 }, pages = { 035310 } }

TY - JOUR AU - V. Consonni AU - M. Hanke AU - M. Knelangen AU - L. Geelhaar AU - A. Trampert AU - H. Riechert TI - Nucleation mechanisms of self-induced GaN nanowires grown on an amorphous interlayer JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 83 SP - 035310 PY - 2011/01/01

Properties of GaN nanowires grown by molecular beam epitaxy

@article{ author = { L. Geelhaar and C. Chèze and B. Jenichen and O. Brandt and C. Pfüller and S. Münch and R. Rothemund and S. Reitzenstein and A. Forchel and Th. Kehagias and Ph. Komninou and G. P. Dimitrakopulos and Th. Karakostas and L. Lari and P. R. Chalker and M. H. Gass and H. Riechert }, title = { Properties of GaN nanowires grown by molecular beam epitaxy }, journal = { IEEE Journal of Selected Topics in Quantum Electronics }, volume = { 17 }, year = { 2011 }, pages = { 878 } }

TY - JOUR AU - L. Geelhaar AU - C. Chèze AU - B. Jenichen AU - O. Brandt AU - C. Pfüller AU - S. Münch AU - R. Rothemund AU - S. Reitzenstein AU - A. Forchel AU - Th. Kehagias AU - Ph. Komninou AU - G. P. Dimitrakopulos AU - Th. Karakostas AU - L. Lari AU - P. R. Chalker AU - M. H. Gass AU - H. Riechert TI - Properties of GaN nanowires grown by molecular beam epitaxy JF - IEEE Journal of Selected Topics in Quantum Electronics JA - IEEE J. Sel. Topics Quantum Electron. J1 - VL - 17 SP - 878 PY - 2011/01/01

Suitability of Au- and self-assisted GaAs nanowires for optoelectronic applications

@article{ author = { S. Breuer and C. Pfüller and T. Flissikowski and O. Brandt and H.T. Grahn and L. Geelhaar and H. Riechert }, title = { Suitability of Au- and self-assisted GaAs nanowires for optoelectronic applications }, journal = { Nano Letters }, volume = { 11 }, year = { 2011 }, pages = { 1276 } }

TY - JOUR AU - S. Breuer AU - C. Pfüller AU - T. Flissikowski AU - O. Brandt AU - H.T. Grahn AU - L. Geelhaar AU - H. Riechert TI - Suitability of Au- and self-assisted GaAs nanowires for optoelectronic applications JF - Nano Letters JA - Nano Lett. J1 - VL - 11 SP - 1276 PY - 2011/01/01

Room-temperature spin injection and spin loss across a GaNAs/GaAs interface

@article{ author = { Y. Puttisong and X. J. Wang and I. A. Buyanova and C. W. Tu and L. Geelhaar and H. Riechert and W. M. Chen }, title = { Room-temperature spin injection and spin loss across a GaNAs/GaAs interface }, journal = { Applied Physics Letters }, volume = { 98 }, year = { 2011 }, pages = { 012112 } }

TY - JOUR AU - Y. Puttisong AU - X. J. Wang AU - I. A. Buyanova AU - C. W. Tu AU - L. Geelhaar AU - H. Riechert AU - W. M. Chen TI - Room-temperature spin injection and spin loss across a GaNAs/GaAs interface JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 98 SP - 012112 PY - 2011/01/01

Nucleation and coalescence effects on the density of self-induced GaN nanowires grown by molecular beam epitaxy

@article{ author = { V. Consonni and M. Knelangen and A. Trampert and L. Geelhaar and H. Riechert }, title = { Nucleation and coalescence effects on the density of self-induced GaN nanowires grown by molecular beam epitaxy }, journal = { Applied Physics Letters }, volume = { 98 }, year = { 2011 }, pages = { 071913 } }

TY - JOUR AU - V. Consonni AU - M. Knelangen AU - A. Trampert AU - L. Geelhaar AU - H. Riechert TI - Nucleation and coalescence effects on the density of self-induced GaN nanowires grown by molecular beam epitaxy JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 98 SP - 071913 PY - 2011/01/01