Dr. Lutz Geelhaar

Acting Director

Head of Department Epitaxy

Lutz Geelhaar

Telefon: +49 30 20377 359

Raum: 0714

Email: geelhaar@pdi-berlin.de

 

Abteilung: Epitaxy

Core research areas: Nanofabrication , III-V nanowires for optoelectronics

 

 

11 Autor A. AlHassan , J. Lähnemann , S. Leake , H. Küpers , M. Niehle , D. Bahrami , F. Bertram , R. B. Lewis , A. Davtyan , T. U. Schülli , L. Geelhaar , U. Pietsch
Titel

Spatially-resolved luminescence and crystal structure of single core-shell nanowires measured in the as-grown geometry

Source Nanotechnology , 31 , 214002 ( 2020 )
DOI : 10.1088/1361-6528/ab7590 | arxiv: 2002.08172 | 3173 Cite : Bibtex RIS
A. AlHassan, J. Lähnemann, S. Leake, H. Küpers, M. Niehle, D. Bahrami, F. Bertram, R. B. Lewis, A. Davtyan, T. U. Schülli, L. Geelhaar, and U. Pietsch

12 Autor M. Azadmand , T. Auzelle , J. Lähnemann , G. Gao , L. Nicolai , M. Ramsteiner , A. Trampert , S. Sanguinetti , O. Brandt , L. Geelhaar
Titel

Self-assembly of well-separated AlN nanowires directly on sputtered metallic TiN films

Source Phys. Status Solidi-Rapid Res. Lett. , 14 , 1900615 ( 2020 )
DOI : 10.1002/pssr.201900615 | arxiv: 1910.07391 | 3149 Cite : Bibtex RIS
M. Azadmand, T. Auzelle, J. Lähnemann, G. Gao, L. Nicolai, M. Ramsteiner, A. Trampert, S. Sanguinetti, O. Brandt, and L. Geelhaar

13 Autor D. van Treeck , S. Fernández-Garrido , L. Geelhaar
Titel

Influence of the source arrangement on shell growth around GaN nanowires in molecular beam epitaxy

Source Phys. Rev. Mater. , 4 , 013404 ( 2020 )
DOI : 10.1103/PhysRevMaterials.4.013404 | arxiv: 1907.10358 | 3109 Cite : Bibtex RIS
D. van Treeck, S. Fernández-Garrido, and L. Geelhaar

14 Autor J. Herranz , P. Corfdir , E. Luna , U. Jahn , R. B. Lewis , L. Schrottke , J. Lähnemann , A. Tahraoui , A. Trampert , O. Brandt , L. Geelhaar
Titel

Coaxial GaAs/(In,Ga)As dot-in-a-well nanowire heterostructures for electrically driven infrared light generation on Si in the telecommunication O band

Source ACS Appl. Nano Mater. , 3 , 165 ( 2020 )
DOI : 10.1021/acsanm.9b01866 | arxiv: 1908.10134 | 3132 Cite : Bibtex RIS
J. Herranz, P. Corfdir, E. Luna, U. Jahn, R. B. Lewis, L. Schrottke, J. Lähnemann, A. Tahraoui, A. Trampert, O. Brandt, and L. Geelhaar

15 Autor S. D. Seddon , C. Benjamin , J. I. Bryant , C. W. Burrows , M. Walker , G. Matheson , J. Herranz , L. Geelhaar , G. R. Bell
Titel

Work function of GaAs(hkl) and its modification using PEI: mechanisms and substrate dependence

Source Phys. Chem. Chem. Phys. , 21 , 24666 ( 2019 )
DOI : 10.1039/c9cp04490f | 3159 Cite : Bibtex RIS
S. D. Seddon, C. Benjamin, J. I. Bryant, C. W. Burrows, M. Walker, G. Matheson, J. Herranz, L. Geelhaar, and G. R. Bell

16 Autor H. Küpers , R. B. Lewis , L. Geelhaar
Titel

Predictive model for the temporal evolution of the shape of GaAs nanowires

Source J. Cryst. Growth , 531 , 125320 ( 2019 )
DOI : 10.1016/j.jcrysgro.2019.125320 | 3117 Cite : Bibtex RIS
H. Küpers, R. B. Lewis, and L. Geelhaar

17 Autor R. B. Lewis , A. Trampert , E. Luna , J. Herranz , C. Pfüller , L. Geelhaar
Titel

Bismuth-surfactant-induced growth and structure of InAs/GaAs(110) quantum dots

Source Semicond. Sci. Technol. , 34 , 105016 ( 2019 )
DOI : 10.1088/1361-6641/ab3c23 | arxiv: 1905.05303 | 3107 Cite : Bibtex RIS
R. B. Lewis, A. Trampert, E. Luna, J. Herranz, C. Pfüller, and L. Geelhaar

18 Autor C. Sinito , P. Corfdir , C. Pfüller , G. Gao , J. Bartolomé , S. Kölling , A. Rodil Doblado , U. Jahn , J. Lähnemann , T. Auzelle , J. K. Zettler , T. Flissikowski , P. Koenraad , H. T. Grahn , L. Geelhaar , S. Fernández-Garrido , O. Brandt
Titel

Absence of quantum-confined Stark effect in GaN quantum disks embedded in (Al,Ga)N nanowires grown by molecular beam epitaxy

Source Nano Lett. , 19 , 5938 ( 2019 )
DOI : 10.1021/acs.nanolett.9b01521 | arxiv: 1905.04090 | 3108 Cite : Bibtex RIS
C. Sinito, P. Corfdir, C. Pfüller, G. Gao, J. Bartolomé, S. Kölling, A. Rodil Doblado, U. Jahn, J. Lähnemann, T. Auzelle, J. K. Zettler, T. Flissikowski, P. Koenraad, H. T. Grahn, L. Geelhaar, S. Fernández-Garrido, and O. Brandt

19 Autor M. Oliva , G. Gao , E. Luna , L. Geelhaar , R. B. Lewis
Titel

Axial GaAs/Ga(As,Bi) nanowire heterostructures

Source Nanotechnology , 30 , 425601 ( 2019 )
DOI : 10.1088/1361-6528/ab3209 | arxiv: 1903.11039 | 3086 Cite : Bibtex RIS
M. Oliva, G. Gao, E. Luna, L. Geelhaar, and R. B. Lewis

20 Autor F. Bastiman , H. Küpers , C. Somaschini , V.G. Dubrovskii , L. Geelhaar
Titel

Analysis of incubation time preceding the Ga-assisted nucleation and growth of GaAs nanowires on Si(111)

Source Phys. Rev. Mater. , 3 , 073401 ( 2019 )
DOI : 10.1103/PhysRevMaterials.3.073401 | arxiv: 1907.04249 | 3081 Cite : Bibtex RIS
F. Bastiman, H. Küpers, C. Somaschini, V.G. Dubrovskii, and L. Geelhaar