Acting Director
Head of Department Epitaxy
Telefon: +49 30 20377 359
Raum: 0714
Email: geelhaar@pdi-berlin.de
Abteilung: Epitaxy
Core research areas: Nanofabrication , III-V nanowires for optoelectronics
41 | Autor | P. Corfdir , R. B. Lewis , L. Geelhaar , O. Brandt |
Titel |
Fine structure of excitons in InAs quantum dots on GaAs(110) layers and nanowire facets |
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Source | Phys. Rev. B , 96 , 045435 ( 2017 ) | |
DOI : 10.1103/PhysRevB.96.045435 | Download: PDF | Cite : Bibtex RIS |
42 | Autor | F. Feix , T. Flissikowski , K. K. Sabelfeld , V. M. Kaganer , M. Wölz , L. Geelhaar , H. T. Grahn , O. Brandt |
Titel |
Ga-Polar (In,Ga)N/GaN Quantum Wells Versus N-Polar (In,Ga)N Quantum Disks in GaN Nanowires: A Comparative Analysis of Carrier Recombination, Diffusion, and Radiative Efficiency |
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Source | Phys. Rev. Appl. , 8 , 014032 ( 2017 ) | |
DOI : 10.1103/PhysRevApplied.8.014032 | arxiv: 1703.06715 | Cite : Bibtex RIS |
43 | Autor | R. B. Lewis , P. Corfdir , J. Herranz , H. Küpers , U. Jahn , O. Brandt , L. Geelhaar |
Titel |
Self-assembly of InAs nanostructures on the sidewalls of GaAs nanowires directed by a Bi surfactant |
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Source | Nano Lett. , 17 , 4255 ( 2017 ) | |
DOI : 10.1021/acs.nanolett.7b01185 | arxiv: 1704.08014 | Cite : Bibtex RIS |
44 | Autor | O. Marquardt , M. Ramsteiner , P. Corfdir , L. Geelhaar , O. Brandt |
Titel |
Modelling the electronic properties of GaAs polytype nanostructures: impact of strain on the conduction band character |
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Source | Phys. Rev. B , 95 , 245309 ( 2017 ) | |
DOI : 10.1103/PhysRevB.95.245309 | Download: PDF | Cite : Bibtex RIS |
45 | Autor | A. Davtyan , T. Krause , D. Kriegner , A. Al-Hassan , D. Bahrami , S. M. M. Kashani , R. B. Lewis , H. Küpers , A. Tahraoui , L. Geelhaar , M. Hanke , S. J. Leake , O. Loffeld , U. Pietsch |
Titel |
Threefold rotational symmetry in hexagonally shaped core–shell (In,Ga)As/GaAs nanowires revealed by coherent X-ray diffraction imaging |
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Source | J. Appl. Cryst. , 50 , 673 ( 2017 ) | |
DOI : 10.1107/S1600576717004149 | Cite : Bibtex RIS |
46 | Autor | J. Kamimura , P. Bogdanoff , F. F. Abdi , J. Lähnemann , R. van de Krol , H. Riechert , L. Geelhaar |
Titel |
Photoelectrochemical properties of GaN photoanodes with cobalt phosphate catalyst for solar water splitting in neutral electrolyte |
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Source | J. Phys. Chem. C , 121 , 12540 ( 2017 ) | |
DOI : 10.1021/acs.jpcc.7b02253 | Cite : Bibtex RIS |
47 | Autor | M. Musolino , A. Tahraoui , L. Geelhaar , F. Sacconi , F. Panetta , C. De Santi , M. Meneghini , E. Zanoni |
Titel |
The effect of the three-dimensional strain variation on the emission properties of light-emitting diodes based on (In,Ga)N/GaN nanowires |
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Source | Phys. Rev. Appl. , 7 , 044014 ( 2017 ) | |
DOI : 10.1103/PhysRevApplied.7.044014 | arxiv: 1704.01569 | Cite : Bibtex RIS |
48 | Autor | J. Kamimura , P. Bogdanoff , M. Ramsteiner , P. Corfdir , F. Feix , L. Geelhaar , H. Riechert |
Titel |
p-type doping of GaN nanowires characterized by photoelectrochemical measurements |
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Source | Nano Lett. , 17 , 1529 ( 2017 ) | |
DOI : 10.1021/acs.nanolett.6b04560 | Cite : Bibtex RIS |
49 | Autor | C. Hauswald , I. Giuntoni , T. Flissikowski , T. Gotschke , R. Calarco , H. T. Grahn , L. Geelhaar , O. Brandt |
Titel |
Luminous efficiency of ordered arrays of GaN nanowires with sub-wavelength diameters |
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Source | ACS Photonics , 4 , 52 ( 2017 ) | |
DOI : 10.1021/acsphotonics.6b00551 | Cite : Bibtex RIS |
50 | Autor | Z. de Souza Schiaber , G. Calabrese , X. Kong , A. Trampert , B. Jenichen , J. H. Dias da Silva , L. Geelhaar , O. Brandt , S. Fernández-Garrido |
Titel |
Polarity-induced selective area epitaxy of GaN nanowires |
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Source | Nano Lett. , 17 , 63 ( 2017 ) | |
DOI : 10.1021/acs.nanolett.6b03249 | Cite : Bibtex RIS |