Dr. Lutz Geelhaar

Photoelectrochemical properties of GaN photoanodes with cobalt phosphate catalyst for solar water splitting in neutral electrolyte

@article{ author = { J. Kamimura and P. Bogdanoff and F. F. Abdi and J. Lähnemann and R. van de Krol and H. Riechert and L. Geelhaar }, title = { Photoelectrochemical properties of GaN photoanodes with cobalt phosphate catalyst for solar water splitting in neutral electrolyte }, journal = { Journal of Physical Chemistry C }, volume = { 121 }, year = { 2017 }, pages = { 12540 } }

TY - JOUR AU - J. Kamimura AU - P. Bogdanoff AU - F. F. Abdi AU - J. Lähnemann AU - R. van de Krol AU - H. Riechert AU - L. Geelhaar TI - Photoelectrochemical properties of GaN photoanodes with cobalt phosphate catalyst for solar water splitting in neutral electrolyte JF - Journal of Physical Chemistry C JA - J. Phys. Chem. C J1 - VL - 121 SP - 12540 PY - 2017/05/30

The effect of the three-dimensional strain variation on the emission properties of light-emitting diodes based on (In,Ga)N/GaN nanowires

@article{ author = { M. Musolino and A. Tahraoui and L. Geelhaar and F. Sacconi and F. Panetta and C. De Santi and M. Meneghini and E. Zanoni }, title = { The effect of the three-dimensional strain variation on the emission properties of light-emitting diodes based on (In,Ga)N/GaN nanowires }, journal = { Physical Review Applied }, volume = { 7 }, year = { 2017 }, pages = { 044014 } }

TY - JOUR AU - M. Musolino AU - A. Tahraoui AU - L. Geelhaar AU - F. Sacconi AU - F. Panetta AU - C. De Santi AU - M. Meneghini AU - E. Zanoni TI - The effect of the three-dimensional strain variation on the emission properties of light-emitting diodes based on (In,Ga)N/GaN nanowires JF - Physical Review Applied JA - Phys. Rev. Applied J1 - VL - 7 SP - 044014 PY - 2017/04/19

p-type doping of GaN nanowires characterized by photoelectrochemical measurements

@article{ author = { J. Kamimura and P. Bogdanoff and M. Ramsteiner and P. Corfdir and F. Feix and L. Geelhaar and H. Riechert }, title = { p-type doping of GaN nanowires characterized by photoelectrochemical measurements }, journal = { Nano Letters }, volume = { 17 }, year = { 2017 }, pages = { 1529 } }

TY - JOUR AU - J. Kamimura AU - P. Bogdanoff AU - M. Ramsteiner AU - P. Corfdir AU - F. Feix AU - L. Geelhaar AU - H. Riechert TI - p-type doping of GaN nanowires characterized by photoelectrochemical measurements JF - Nano Letters JA - Nano Lett. J1 - VL - 17 SP - 1529 PY - 2017/02/06

Luminous efficiency of ordered arrays of GaN nanowires with sub-wavelength diameters

@article{ author = { C. Hauswald and I. Giuntoni and T. Flissikowski and T. Gotschke and R. Calarco and H. T. Grahn and L. Geelhaar and O. Brandt }, title = { Luminous efficiency of ordered arrays of GaN nanowires with sub-wavelength diameters }, journal = { ACS Photonics }, volume = { 4 }, year = { 2017 }, pages = { 52 } }

TY - JOUR AU - C. Hauswald AU - I. Giuntoni AU - T. Flissikowski AU - T. Gotschke AU - R. Calarco AU - H. T. Grahn AU - L. Geelhaar AU - O. Brandt TI - Luminous efficiency of ordered arrays of GaN nanowires with sub-wavelength diameters JF - ACS Photonics JA - ACS Photonics J1 - VL - 4 SP - 52 PY - 2017/01/19

Polarity-induced selective area epitaxy of GaN nanowires

@article{ author = { Z. de Souza Schiaber and G. Calabrese and X. Kong and A. Trampert and B. Jenichen and J. H. Dias da Silva and L. Geelhaar and O. Brandt and S. Fernández-Garrido }, title = { Polarity-induced selective area epitaxy of GaN nanowires }, journal = { Nano Letters }, volume = { 17 }, year = { 2017 }, pages = { 63 } }

TY - JOUR AU - Z. de Souza Schiaber AU - G. Calabrese AU - X. Kong AU - A. Trampert AU - B. Jenichen AU - J. H. Dias da Silva AU - L. Geelhaar AU - O. Brandt AU - S. Fernández-Garrido TI - Polarity-induced selective area epitaxy of GaN nanowires JF - Nano Letters JA - Nano Lett. J1 - VL - 17 SP - 63 PY - 2017/01/11

Anomalous strain relaxation in core-shell nanowires via simultaneous coherent and incoherent growth

@article{ author = { R. B. Lewis and L. Nicolai and H. Küpers and M. Ramsteiner and A. Trampert and L. Geelhaar }, title = { Anomalous strain relaxation in core-shell nanowires via simultaneous coherent and incoherent growth }, journal = { Nano Letters }, volume = { 17 }, year = { 2017 }, pages = { 136 } }

TY - JOUR AU - R. B. Lewis AU - L. Nicolai AU - H. Küpers AU - M. Ramsteiner AU - A. Trampert AU - L. Geelhaar TI - Anomalous strain relaxation in core-shell nanowires via simultaneous coherent and incoherent growth JF - Nano Letters JA - Nano Lett. J1 - VL - 17 SP - 136 PY - 2017/01/01

Broad-band light absorption and high photocurrent of (In,Ga)N nanowire photoanodes resulting from a radial Stark effect

@article{ author = { J. Kamimura and P. Bogdanoff and P. Corfdir and O. Brandt and H. Riechert and L. Geelhaar }, title = { Broad-band light absorption and high photocurrent of (In,Ga)N nanowire photoanodes resulting from a radial Stark effect }, journal = { ACS Applied Materials and Interfaces }, volume = { 8 }, year = { 2016 }, pages = { 34490 } }

TY - JOUR AU - J. Kamimura AU - P. Bogdanoff AU - P. Corfdir AU - O. Brandt AU - H. Riechert AU - L. Geelhaar TI - Broad-band light absorption and high photocurrent of (In,Ga)N nanowire photoanodes resulting from a radial Stark effect JF - ACS Applied Materials and Interfaces JA - ACS Appl. Mater. Interfaces J1 - VL - 8 SP - 34490 PY - 2016/11/30

Ga predeposition for the Ga-assisted growth of GaAs nanowire ensembles with low number density and homogeneous length

@article{ author = { H. Küpers and F. Bastiman and E. Luna and C. Somaschini and L. Geelhaar }, title = { Ga predeposition for the Ga-assisted growth of GaAs nanowire ensembles with low number density and homogeneous length }, journal = { Journal of Crystal Growth }, volume = { 459 }, year = { 2016 }, pages = { 43 } }

TY - JOUR AU - H. Küpers AU - F. Bastiman AU - E. Luna AU - C. Somaschini AU - L. Geelhaar TI - Ga predeposition for the Ga-assisted growth of GaAs nanowire ensembles with low number density and homogeneous length JF - Journal of Crystal Growth JA - J. Cryst. Growth J1 - JGC VL - 459 SP - 43 PY - 2016/11/18

Nature of excitons bound to inversion domain boundaries: Origin of the 3.45-eV luminescence lines in spontaneously formed GaN nanowires on Si(111)

@article{ author = { C. Pfüller and P. Corfdir and C. Hauswald and T. Flissikowski and X. Kong and J. K. Zettler and S. Fernández-Garrido and P. Dogan and H. T. Grahn and A. Trampert and L. Geelhaar and O. Brandt }, title = { Nature of excitons bound to inversion domain boundaries: Origin of the 3.45-eV luminescence lines in spontaneously formed GaN nanowires on Si(111) }, journal = { Physical Review B: Solid State }, volume = { 94 }, year = { 2016 }, pages = { 155308 } }

TY - JOUR AU - C. Pfüller AU - P. Corfdir AU - C. Hauswald AU - T. Flissikowski AU - X. Kong AU - J. K. Zettler AU - S. Fernández-Garrido AU - P. Dogan AU - H. T. Grahn AU - A. Trampert AU - L. Geelhaar AU - O. Brandt TI - Nature of excitons bound to inversion domain boundaries: Origin of the 3.45-eV luminescence lines in spontaneously formed GaN nanowires on Si(111) JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 94 SP - 155308 PY - 2016/10/17

Exciton dynamics in GaAs(Al,Ga)As core-shell nanowires with shell quantum dots

@article{ author = { P. Corfdir and H. Küpers and R. B. Lewis and T. Flissikowski and H. T. Grahn and L. Geelhaar and O. Brandt }, title = { Exciton dynamics in GaAs(Al,Ga)As core-shell nanowires with shell quantum dots }, journal = { Physical Review B: Solid State }, volume = { 94 }, year = { 2016 }, pages = { 155413 } }

TY - JOUR AU - P. Corfdir AU - H. Küpers AU - R. B. Lewis AU - T. Flissikowski AU - H. T. Grahn AU - L. Geelhaar AU - O. Brandt TI - Exciton dynamics in GaAs(Al,Ga)As core-shell nanowires with shell quantum dots JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 94 SP - 155413 PY - 2016/10/11