Dr. Lutz Geelhaar

Fine structure of excitons in InAs quantum dots on GaAs(110) layers and nanowire facets

@article{ author = { P. Corfdir and R. B. Lewis and L. Geelhaar and O. Brandt }, title = { Fine structure of excitons in InAs quantum dots on GaAs(110) layers and nanowire facets }, journal = { Physical Review B: Solid State }, volume = { 96 }, year = { 2017 }, pages = { 045435 } }

TY - JOUR AU - P. Corfdir AU - R. B. Lewis AU - L. Geelhaar AU - O. Brandt TI - Fine structure of excitons in InAs quantum dots on GaAs(110) layers and nanowire facets JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 96 SP - 045435 PY - 2017/07/28

Ga-Polar (In,Ga)N/GaN Quantum Wells Versus N-Polar (In,Ga)N Quantum Disks in GaN Nanowires: A Comparative Analysis of Carrier Recombination, Diffusion, and Radiative Efficiency

@article{ author = { F. Feix and T. Flissikowski and K. K. Sabelfeld and V. M. Kaganer and M. Wölz and L. Geelhaar and H. T. Grahn and O. Brandt }, title = { Ga-Polar (In,Ga)N/GaN Quantum Wells Versus N-Polar (In,Ga)N Quantum Disks in GaN Nanowires: A Comparative Analysis of Carrier Recombination, Diffusion, and Radiative Efficiency }, journal = { Physical Review Applied }, volume = { 8 }, year = { 2017 }, pages = { 014032 } }

TY - JOUR AU - F. Feix AU - T. Flissikowski AU - K. K. Sabelfeld AU - V. M. Kaganer AU - M. Wölz AU - L. Geelhaar AU - H. T. Grahn AU - O. Brandt TI - Ga-Polar (In,Ga)N/GaN Quantum Wells Versus N-Polar (In,Ga)N Quantum Disks in GaN Nanowires: A Comparative Analysis of Carrier Recombination, Diffusion, and Radiative Efficiency JF - Physical Review Applied JA - Phys. Rev. Appl. J1 - VL - 8 SP - 014032 PY - 2017/07/27

Self-assembly of InAs nanostructures on the sidewalls of GaAs nanowires directed by a Bi surfactant

@article{ author = { R. B. Lewis and P. Corfdir and J. Herranz and H. Küpers and U. Jahn and O. Brandt and L. Geelhaar }, title = { Self-assembly of InAs nanostructures on the sidewalls of GaAs nanowires directed by a Bi surfactant }, journal = { Nano Letters }, volume = { 17 }, year = { 2017 }, pages = { 4255 } }

TY - JOUR AU - R. B. Lewis AU - P. Corfdir AU - J. Herranz AU - H. Küpers AU - U. Jahn AU - O. Brandt AU - L. Geelhaar TI - Self-assembly of InAs nanostructures on the sidewalls of GaAs nanowires directed by a Bi surfactant JF - Nano Letters JA - Nano Lett. J1 - VL - 17 SP - 4255 PY - 2017/06/27

Modelling the electronic properties of GaAs polytype nanostructures: impact of strain on the conduction band character

@article{ author = { O. Marquardt and M. Ramsteiner and P. Corfdir and L. Geelhaar and O. Brandt }, title = { Modelling the electronic properties of GaAs polytype nanostructures: impact of strain on the conduction band character }, journal = { Physical Review B: Solid State }, volume = { 95 }, year = { 2017 }, pages = { 245309 } }

TY - JOUR AU - O. Marquardt AU - M. Ramsteiner AU - P. Corfdir AU - L. Geelhaar AU - O. Brandt TI - Modelling the electronic properties of GaAs polytype nanostructures: impact of strain on the conduction band character JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 95 SP - 245309 PY - 2017/06/13

Threefold rotational symmetry in hexagonally shaped core–shell (In,Ga)As/GaAs nanowires revealed by coherent X-ray diffraction imaging

@article{ author = { A. Davtyan and T. Krause and D. Kriegner and A. Al-Hassan and D. Bahrami and S. M. M. Kashani and R. B. Lewis and H. Küpers and A. Tahraoui and L. Geelhaar and M. Hanke and S. J. Leake and O. Loffeld and U. Pietsch }, title = { Threefold rotational symmetry in hexagonally shaped core–shell (In,Ga)As/GaAs nanowires revealed by coherent X-ray diffraction imaging }, journal = { Journal of Applied Crystallography }, volume = { 50 }, year = { 2017 }, pages = { 673 } }

TY - JOUR AU - A. Davtyan AU - T. Krause AU - D. Kriegner AU - A. Al-Hassan AU - D. Bahrami AU - S. M. M. Kashani AU - R. B. Lewis AU - H. Küpers AU - A. Tahraoui AU - L. Geelhaar AU - M. Hanke AU - S. J. Leake AU - O. Loffeld AU - U. Pietsch TI - Threefold rotational symmetry in hexagonally shaped core–shell (In,Ga)As/GaAs nanowires revealed by coherent X-ray diffraction imaging JF - Journal of Applied Crystallography JA - J. Appl. Cryst. J1 - VL - 50 SP - 673 PY - 2017/06/01

Photoelectrochemical properties of GaN photoanodes with cobalt phosphate catalyst for solar water splitting in neutral electrolyte

@article{ author = { J. Kamimura and P. Bogdanoff and F. F. Abdi and J. Lähnemann and R. van de Krol and H. Riechert and L. Geelhaar }, title = { Photoelectrochemical properties of GaN photoanodes with cobalt phosphate catalyst for solar water splitting in neutral electrolyte }, journal = { Journal of Physical Chemistry C }, volume = { 121 }, year = { 2017 }, pages = { 12540 } }

TY - JOUR AU - J. Kamimura AU - P. Bogdanoff AU - F. F. Abdi AU - J. Lähnemann AU - R. van de Krol AU - H. Riechert AU - L. Geelhaar TI - Photoelectrochemical properties of GaN photoanodes with cobalt phosphate catalyst for solar water splitting in neutral electrolyte JF - Journal of Physical Chemistry C JA - J. Phys. Chem. C J1 - VL - 121 SP - 12540 PY - 2017/05/30

The effect of the three-dimensional strain variation on the emission properties of light-emitting diodes based on (In,Ga)N/GaN nanowires

@article{ author = { M. Musolino and A. Tahraoui and L. Geelhaar and F. Sacconi and F. Panetta and C. De Santi and M. Meneghini and E. Zanoni }, title = { The effect of the three-dimensional strain variation on the emission properties of light-emitting diodes based on (In,Ga)N/GaN nanowires }, journal = { Physical Review Applied }, volume = { 7 }, year = { 2017 }, pages = { 044014 } }

TY - JOUR AU - M. Musolino AU - A. Tahraoui AU - L. Geelhaar AU - F. Sacconi AU - F. Panetta AU - C. De Santi AU - M. Meneghini AU - E. Zanoni TI - The effect of the three-dimensional strain variation on the emission properties of light-emitting diodes based on (In,Ga)N/GaN nanowires JF - Physical Review Applied JA - Phys. Rev. Appl. J1 - VL - 7 SP - 044014 PY - 2017/04/19

p-type doping of GaN nanowires characterized by photoelectrochemical measurements

@article{ author = { J. Kamimura and P. Bogdanoff and M. Ramsteiner and P. Corfdir and F. Feix and L. Geelhaar and H. Riechert }, title = { p-type doping of GaN nanowires characterized by photoelectrochemical measurements }, journal = { Nano Letters }, volume = { 17 }, year = { 2017 }, pages = { 1529 } }

TY - JOUR AU - J. Kamimura AU - P. Bogdanoff AU - M. Ramsteiner AU - P. Corfdir AU - F. Feix AU - L. Geelhaar AU - H. Riechert TI - p-type doping of GaN nanowires characterized by photoelectrochemical measurements JF - Nano Letters JA - Nano Lett. J1 - VL - 17 SP - 1529 PY - 2017/02/06

Luminous efficiency of ordered arrays of GaN nanowires with sub-wavelength diameters

@article{ author = { C. Hauswald and I. Giuntoni and T. Flissikowski and T. Gotschke and R. Calarco and H. T. Grahn and L. Geelhaar and O. Brandt }, title = { Luminous efficiency of ordered arrays of GaN nanowires with sub-wavelength diameters }, journal = { ACS Photonics }, volume = { 4 }, year = { 2017 }, pages = { 52 } }

TY - JOUR AU - C. Hauswald AU - I. Giuntoni AU - T. Flissikowski AU - T. Gotschke AU - R. Calarco AU - H. T. Grahn AU - L. Geelhaar AU - O. Brandt TI - Luminous efficiency of ordered arrays of GaN nanowires with sub-wavelength diameters JF - ACS Photonics JA - ACS Photonics J1 - VL - 4 SP - 52 PY - 2017/01/19

Polarity-induced selective area epitaxy of GaN nanowires

@article{ author = { Z. de Souza Schiaber and G. Calabrese and X. Kong and A. Trampert and B. Jenichen and J. H. Dias da Silva and L. Geelhaar and O. Brandt and S. Fernández-Garrido }, title = { Polarity-induced selective area epitaxy of GaN nanowires }, journal = { Nano Letters }, volume = { 17 }, year = { 2017 }, pages = { 63 } }

TY - JOUR AU - Z. de Souza Schiaber AU - G. Calabrese AU - X. Kong AU - A. Trampert AU - B. Jenichen AU - J. H. Dias da Silva AU - L. Geelhaar AU - O. Brandt AU - S. Fernández-Garrido TI - Polarity-induced selective area epitaxy of GaN nanowires JF - Nano Letters JA - Nano Lett. J1 - VL - 17 SP - 63 PY - 2017/01/11