Dr. Lutz Geelhaar

Acting Director

Head of Department Epitaxy

Lutz Geelhaar

Telefon: +49 30 20377 359

Raum: 0714

Email: geelhaar@pdi-berlin.de

 

Abteilung: Epitaxy

Core research areas: Nanofabrication , III-V nanowires for optoelectronics

 

 

61 Autor M. Musolino , D. v. Treeck , A. Tahraoui , L. Scarparo , C. De Santi , M. Meneghini , E. Zanoni , L. Geelhaar , H. Riechert
Titel

A physical model for the reverse leakage current in (In,Ga)N/GaN light-emitting diodes based on nanowires

Source J. Appl. Phys. , 119 , 044502 ( 2016 )
DOI : 10.1063/1.4940949 | Download: PDF | 2760 Cite : Bibtex RIS
M. Musolino, D. v. Treeck, A. Tahraoui, L. Scarparo, C. De Santi, M. Meneghini, E. Zanoni, L. Geelhaar, and H. Riechert

62 Autor J. Lähnemann , P. Corfdir , F. Feix , J. Kamimura , T. Flissikowski , H. T. Grahn , L. Geelhaar , O. Brandt
Titel

Radial Stark effect in (In,Ga)N nanowires

Source Nano Lett. , 16 , 917 ( 2016 )
DOI : 10.1021/acs.nanolett.5b03748 | arxiv: 1601.07201 | 2744 Cite : Bibtex RIS
J. Lähnemann, P. Corfdir, F. Feix, J. Kamimura, T. Flissikowski, H. T. Grahn, L. Geelhaar, and O. Brandt

63 Autor J. K. Zettler , P. Corfdir , L. Geelhaar , H. Riechert , O. Brandt , S. Fernández-Garrido
Titel

Improved control over spontaneously formed GaN nanowires in molecular beam epitaxy using a two-step growth process

Source Nanotechnol. , 26 , 445604 ( 2015 )
DOI : 10.1088/0957-4484/26/44/445604 | arxiv: 1508.06266 | 2712 Cite : Bibtex RIS
J. K. Zettler, P. Corfdir, L. Geelhaar, H. Riechert, O. Brandt, and S. Fernández-Garrido

64 Autor O. Marquardt , L. Geelhaar , O. Brandt
Titel

Impact of individual dopants on the electronic properties of axial (In,Ga)N/GaN nanowire heterostructures

Source IEEE , IEEE Catalog Nr. CFP15817-PRT , 113 ( 2015 )
DOI : ISBN 978-1-4799-8378-0 | 2714 Cite : Bibtex RIS
O. Marquardt, L. Geelhaar, and O. Brandt

65 Autor T. Schumann , J. M. J. Lopes , J. M. Wofford , M.H. Oliveira Jr. , M. Dubslaff , M. Hanke , U. Jahn , L. Geelhaar , H. Riechert
Titel

The impact of substrate selection for the controlled growth of graphene by molecular beam epitaxy

Source J. Cryst. Growth , 425 , 274 ( 2015 )
DOI : 10.1016/j.jcrysgro.2015.02.060 | 2670 Cite : Bibtex RIS
T. Schumann, J. M. J. Lopes, J. M. Wofford, M.H. Oliveira Jr., M. Dubslaff, M. Hanke, U. Jahn, L. Geelhaar, and H. Riechert

66 Autor H. Li , L. Geelhaar , H. Riechert , C. Draxl
Titel

Computing Equilibrium Shapes of Wurtzite Crystals: The Example of GaN

Source Phys. Rev. Lett. , 115 , 085503 ( 2015 )
DOI : 10.1103/PhysRevLett.115.085503 | Download: PDF | 2651 Cite : Bibtex RIS
H. Li, L. Geelhaar, H. Riechert, and C. Draxl

67 Autor J. K. Zettler , C. Hauswald , P. Corfdir , M. Musolino , L. Geelhaar , H. Riechert , O. Brandt , S. Fernández-Garrido
Titel

High-temperature growth of GaN nanowires by molecular beam epitaxy: toward the material quality of bulk GaN

Source Cryst. Growth Des. , 15 , 4104 ( 2015 )
DOI : 10.1021/acs.cgd.5b00690 | 2697 Cite : Bibtex RIS
J. K. Zettler, C. Hauswald, P. Corfdir, M. Musolino, L. Geelhaar, H. Riechert, O. Brandt, and S. Fernández-Garrido

68 Autor O. Marquardt , L. Geelhaar , O. Brandt
Titel

Impact of random dopant fluctuations on the electronic properties of InxGa1-xN/GaN axial nanowire heterostructures

Source Nano Lett. , 15 , 4289 ( 2015 )
DOI : 10.1021/acs.nanolett.5b00101 | 2678 Cite : Bibtex RIS
O. Marquardt, L. Geelhaar, and O. Brandt

69 Autor O. Marquardt , L. Geelhaar , O. Brandt
Titel

Electronic properties of axial InxGa1-xN insertions in GaN nanowires

Source J. Comput. Electron. , 14 , 464 ( 2015 )
DOI : 10.1007/s10825-015-0669-1 | 2679 Cite : Bibtex RIS
O. Marquardt, L. Geelhaar, and O. Brandt

70 Autor M. Wölz , C. Hauswald , T. Flissikowski , T. Gotschke , S. Fernández-Garrido , O. Brandt , H. T. Grahn , L. Geelhaar , H. Riechert
Titel

Epitaxial growth of GaN nanowires with high structural perfection on a metallic TiN film

Source Nano Lett. , 15 , 3743 ( 2015 )
DOI : 10.1021/acs.nanolett.5b00251 | 2698 Cite : Bibtex RIS
M. Wölz, C. Hauswald, T. Flissikowski, T. Gotschke, S. Fernández-Garrido, O. Brandt, H. T. Grahn, L. Geelhaar, and H. Riechert