Acting Director
Head of Department Epitaxy
Telefon: +49 30 20377 359
Raum: 0714
Email: geelhaar@pdi-berlin.de
Abteilung: Epitaxy
Core research areas: Nanofabrication , III-V nanowires for optoelectronics
71 | Autor | H. Li , L. Geelhaar , H. Riechert , C. Draxl |
Titel |
Computing Equilibrium Shapes of Wurtzite Crystals: The Example of GaN |
|
Source | Phys. Rev. Lett. , 115 , 085503 ( 2015 ) | |
DOI : 10.1103/PhysRevLett.115.085503 | Download: PDF | Cite : Bibtex RIS |
72 | Autor | J. K. Zettler , C. Hauswald , P. Corfdir , M. Musolino , L. Geelhaar , H. Riechert , O. Brandt , S. Fernández-Garrido |
Titel |
High-temperature growth of GaN nanowires by molecular beam epitaxy: toward the material quality of bulk GaN |
|
Source | Cryst. Growth Des. , 15 , 4104 ( 2015 ) | |
DOI : 10.1021/acs.cgd.5b00690 | Cite : Bibtex RIS |
73 | Autor | O. Marquardt , L. Geelhaar , O. Brandt |
Titel |
Impact of random dopant fluctuations on the electronic properties of InxGa1-xN/GaN axial nanowire heterostructures |
|
Source | Nano Lett. , 15 , 4289 ( 2015 ) | |
DOI : 10.1021/acs.nanolett.5b00101 | Cite : Bibtex RIS |
74 | Autor | O. Marquardt , L. Geelhaar , O. Brandt |
Titel |
Electronic properties of axial InxGa1-xN insertions in GaN nanowires |
|
Source | J. Comput. Electron. , 14 , 464 ( 2015 ) | |
DOI : 10.1007/s10825-015-0669-1 | Cite : Bibtex RIS |
75 | Autor | M. Wölz , C. Hauswald , T. Flissikowski , T. Gotschke , S. Fernández-Garrido , O. Brandt , H. T. Grahn , L. Geelhaar , H. Riechert |
Titel |
Epitaxial growth of GaN nanowires with high structural perfection on a metallic TiN film |
|
Source | Nano Lett. , 15 , 3743 ( 2015 ) | |
DOI : 10.1021/acs.nanolett.5b00251 | Cite : Bibtex RIS |
76 | Autor | S. Schulz , O. Marquardt , C. Coughlan , M. A. Caro , L. Geelhaar , O. Brandt , E. P. O'Reilly |
Titel |
Atomistic description of wave function localization effects in In(x)Ga(1-x)N alloys and quantum wells |
|
Source | Proc. SPIE , 9357 , ( 2015 ) | |
DOI : 10.1117/12.2084800 | Download: PDF | Cite : Bibtex RIS |
77 | Autor | S. Fernández-Garrido , J. K. Zettler , L. Geelhaar , O. Brandt |
Titel |
Monitoring the formation of nanowires by line-of-sight quadrupole mass spectrometry: a comprehensive description of the temporal evolution of GaN nanowire ensembles |
|
Source | Nano Lett. , 15 , 1930 ( 2015 ) | |
DOI : 10.1021/nl504778s | Cite : Bibtex RIS |
78 | Autor | M. Musolino , M. Meneghini , L. Scarparo , C. De Santi , A. Tahraoui , L. Geelhaar , E. Zanoni , H. Riechert |
Titel |
Deep level transient spectroscopy on light-emitting diodes based on (In,Ga)N/GaN nanowire ensembles |
|
Source | Proc. SPIE , 9363 , 936325 ( 2015 ) | |
DOI : 10.1117/12.2077438 | Download: PDF | Cite : Bibtex RIS |
79 | Autor | M. Musolino , A. Tahraoui , S. Fernández-Garrido , O. Brandt , A. Trampert , L. Geelhaar , H. Riechert |
Titel |
Compatibility of the selective area growth of GaN nanowires on AlN-buffered Si substrates with the operation of light emitting diodes |
|
Source | Nanotechnology , 26 , 085605 ( 2015 ) | |
DOI : 10.1088/0957-4484/26/8/085605 | arxiv: 1410.7546 | Cite : Bibtex RIS |
80 | Autor | A. Mukherjee , S. Ghosh , S. Breuer , U. Jahn , L. Geelhaar , H. T. Grahn |
Titel |
Spatially resolved polarized micro-photoluminescence study of GaAs nanowires with both zincblende and wurtzite phases |
|
Source | J. Appl. Phys. , 117 , 054308 ( 2015 ) | |
DOI : 10.1063/1.4907388 | Download: PDF | Cite : Bibtex RIS |