Dr. Lutz Geelhaar

Atomistic description of wave function localization effects in In(x)Ga(1-x)N alloys and quantum wells

@article{ author = { S. Schulz and O. Marquardt and C. Coughlan and M. A. Caro and L. Geelhaar and O. Brandt and E. P. O'Reilly }, title = { Atomistic description of wave function localization effects in In(x)Ga(1-x)N alloys and quantum wells }, journal = { Proceedings of SPIE }, volume = { 9357 }, year = { 2015 }, pages = { } }

TY - JOUR AU - S. Schulz AU - O. Marquardt AU - C. Coughlan AU - M. A. Caro AU - L. Geelhaar AU - O. Brandt AU - E. P. O'Reilly TI - Atomistic description of wave function localization effects in In(x)Ga(1-x)N alloys and quantum wells JF - Proceedings of SPIE JA - Proc. SPIE J1 - VL - 9357 SP - PY - 2015/03/16

Monitoring the formation of nanowires by line-of-sight quadrupole mass spectrometry: a comprehensive description of the temporal evolution of GaN nanowire ensembles

@article{ author = { S. Fernández-Garrido and J. K. Zettler and L. Geelhaar and O. Brandt }, title = { Monitoring the formation of nanowires by line-of-sight quadrupole mass spectrometry: a comprehensive description of the temporal evolution of GaN nanowire ensembles }, journal = { Nano Letters }, volume = { 15 }, year = { 2015 }, pages = { 1930 } }

TY - JOUR AU - S. Fernández-Garrido AU - J. K. Zettler AU - L. Geelhaar AU - O. Brandt TI - Monitoring the formation of nanowires by line-of-sight quadrupole mass spectrometry: a comprehensive description of the temporal evolution of GaN nanowire ensembles JF - Nano Letters JA - Nano Lett. J1 - VL - 15 SP - 1930 PY - 2015/02/11

Deep level transient spectroscopy on light-emitting diodes based on (In,Ga)N/GaN nanowire ensembles

@article{ author = { M. Musolino and M. Meneghini and L. Scarparo and C. De Santi and A. Tahraoui and L. Geelhaar and E. Zanoni and H. Riechert }, title = { Deep level transient spectroscopy on light-emitting diodes based on (In,Ga)N/GaN nanowire ensembles }, journal = { Proceedings of SPIE }, volume = { 9363 }, year = { 2015 }, pages = { 936325 } }

TY - JOUR AU - M. Musolino AU - M. Meneghini AU - L. Scarparo AU - C. De Santi AU - A. Tahraoui AU - L. Geelhaar AU - E. Zanoni AU - H. Riechert TI - Deep level transient spectroscopy on light-emitting diodes based on (In,Ga)N/GaN nanowire ensembles JF - Proceedings of SPIE JA - Proc. SPIE J1 - VL - 9363 SP - 936325 PY - 2015/02/07

Compatibility of the selective area growth of GaN nanowires on AlN-buffered Si substrates with the operation of light emitting diodes

@article{ author = { M. Musolino and A. Tahraoui and S. Fernández-Garrido and O. Brandt and A. Trampert and L. Geelhaar and H. Riechert }, title = { Compatibility of the selective area growth of GaN nanowires on AlN-buffered Si substrates with the operation of light emitting diodes }, journal = { Nanotechnology }, volume = { 26 }, year = { 2015 }, pages = { 085605 } }

TY - JOUR AU - M. Musolino AU - A. Tahraoui AU - S. Fernández-Garrido AU - O. Brandt AU - A. Trampert AU - L. Geelhaar AU - H. Riechert TI - Compatibility of the selective area growth of GaN nanowires on AlN-buffered Si substrates with the operation of light emitting diodes JF - Nanotechnology JA - Nanotechnol. J1 - NAN VL - 26 SP - 085605 PY - 2015/02/06

Spatially resolved polarized micro-photoluminescence study of GaAs nanowires with both zincblende and wurtzite phases

@article{ author = { A. Mukherjee and S. Ghosh and S. Breuer and U. Jahn and L. Geelhaar and H. T. Grahn }, title = { Spatially resolved polarized micro-photoluminescence study of GaAs nanowires with both zincblende and wurtzite phases }, journal = { Journal of Applied Physics }, volume = { 117 }, year = { 2015 }, pages = { 054308 } }

TY - JOUR AU - A. Mukherjee AU - S. Ghosh AU - S. Breuer AU - U. Jahn AU - L. Geelhaar AU - H. T. Grahn TI - Spatially resolved polarized micro-photoluminescence study of GaAs nanowires with both zincblende and wurtzite phases JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 117 SP - 054308 PY - 2015/02/05

Evolution of polytypism in GaAs nanowires during growth revealed by time-resolved in-situ X-ray diffraction

@article{ author = { P. Schroth and M. Köhl and J.-W. Hornung and E. Dimakis and C. Somaschini and L. Geelhaar and A. Biermanns and S. Bauer and S. Lazarev and U. Pietsch and T. Baumbach }, title = { Evolution of polytypism in GaAs nanowires during growth revealed by time-resolved in-situ X-ray diffraction }, journal = { Physical Review Letters }, volume = { 114 }, year = { 2015 }, pages = { 055504 } }

TY - JOUR AU - P. Schroth AU - M. Köhl AU - J.-W. Hornung AU - E. Dimakis AU - C. Somaschini AU - L. Geelhaar AU - A. Biermanns AU - S. Bauer AU - S. Lazarev AU - U. Pietsch AU - T. Baumbach TI - Evolution of polytypism in GaAs nanowires during growth revealed by time-resolved in-situ X-ray diffraction JF - Physical Review Letters JA - Phys. Rev. Lett. J1 - PRL VL - 114 SP - 055504 PY - 2015/02/05

Correlation of electrical and structural properties of single as-grown GaAs nanowires on Si (111) substrates

@article{ author = { G. Bussone and H. Schäfer-Eberwein and E. Dimakis and A. Biermanns and D. Carbone and A. Tahraoui and L. Geelhaar and P. HaringBolívar and T. U. Schülli and U. Pietsch }, title = { Correlation of electrical and structural properties of single as-grown GaAs nanowires on Si (111) substrates }, journal = { Nano Letters }, volume = { 15 }, year = { 2015 }, pages = { 981 } }

TY - JOUR AU - G. Bussone AU - H. Schäfer-Eberwein AU - E. Dimakis AU - A. Biermanns AU - D. Carbone AU - A. Tahraoui AU - L. Geelhaar AU - P. HaringBolívar AU - T. U. Schülli AU - U. Pietsch TI - Correlation of electrical and structural properties of single as-grown GaAs nanowires on Si (111) substrates JF - Nano Letters JA - Nano Lett. J1 - VL - 15 SP - 981 PY - 2015/01/29

Non-destructive assessment of the polarity of GaN nanowire ensembles using low-energy electron diffraction and x-ray photoelectron diffraction

@article{ author = { O. Romanyuk and S. Fernández-Garrido and P. Jiricek and I. Bartos and L. Geelhaar and O. Brandt and T. Paskova }, title = { Non-destructive assessment of the polarity of GaN nanowire ensembles using low-energy electron diffraction and x-ray photoelectron diffraction }, journal = { Applied Physics Letters }, volume = { 106 }, year = { 2015 }, pages = { 021602 } }

TY - JOUR AU - O. Romanyuk AU - S. Fernández-Garrido AU - P. Jiricek AU - I. Bartos AU - L. Geelhaar AU - O. Brandt AU - T. Paskova TI - Non-destructive assessment of the polarity of GaN nanowire ensembles using low-energy electron diffraction and x-ray photoelectron diffraction JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 106 SP - 021602 PY - 2015/01/12

Polytypism in GaAs nanowires: Determination of the interplanar spacing of wurtzite GaAs by X-ray diffraction

@article{ author = { M. Koehl and P. Schroth and A. A. Minkevich and J.-W. Hornung and E. Dimakis and C. Somaschini and L. Geelhaar and T. Aschenbrenner and S. Lazarev and D. Grigoriev and U. Pietsch and T. Baumbach }, title = { Polytypism in GaAs nanowires: Determination of the interplanar spacing of wurtzite GaAs by X-ray diffraction }, journal = { Journal of Synchrotron Radiation }, volume = { 22 }, year = { 2015 }, pages = { 67 } }

TY - JOUR AU - M. Koehl AU - P. Schroth AU - A. A. Minkevich AU - J.-W. Hornung AU - E. Dimakis AU - C. Somaschini AU - L. Geelhaar AU - T. Aschenbrenner AU - S. Lazarev AU - D. Grigoriev AU - U. Pietsch AU - T. Baumbach TI - Polytypism in GaAs nanowires: Determination of the interplanar spacing of wurtzite GaAs by X-ray diffraction JF - Journal of Synchrotron Radiation JA - J. Synchrotron Rad. J1 - JSR VL - 22 SP - 67 PY - 2015/01/02

Si doping effects on (In,Ga)N nanowires

@article{ author = { J. Kamimura and M. Ramsteiner and L. Geelhaar and H. Riechert }, title = { Si doping effects on (In,Ga)N nanowires }, journal = { Journal of Applied Physics }, volume = { 116 }, year = { 2014 }, pages = { 244310 } }

TY - JOUR AU - J. Kamimura AU - M. Ramsteiner AU - L. Geelhaar AU - H. Riechert TI - Si doping effects on (In,Ga)N nanowires JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 116 SP - 244310 PY - 2014/12/30