Prof. Dr. Henning Riechert

Director

Henning Riechert

Telefon: +49 30 20377 365

Raum: 0613

Email: riechert@pdi-berlin.de

 

 

Forschungsschwerpunkt:

Epitaxy, Physics and Applications of III-V Semiconductors, Optoelectronics, Materials for Nanoelectronics

 

 

1 Autor G.V. Soares , S. Nakhaie , M. Heilmann , H. Riechert , J. M. J. Lopes
Titel

Growth of boron-doped graphene by molecular beam epitaxy

Source Appl. Phys. Lett. , 112 , 163103 ( 2018 )
DOI : 10.1063/1.5019352 | Download: PDF | 2992 Cite : Bibtex RIS
G.V. Soares, S. Nakhaie, M. Heilmann, H. Riechert, and J. M. J. Lopes

2 Autor H. Küpers , R. B. Lewis , A. Tahraoui , M. Matalla , O. Krüger , F. Bastiman , H. Riechert , L. Geelhaar
Titel

The diameter evolution of selective area grown Ga-assisted GaAs nanowires in molecular beam epitaxy

Source Nano Res. , 11 , 2885 ( 2018 )
DOI : 10.1007/s12274-018-1984-1 | 2956 Cite : Bibtex RIS
H. Küpers, R. B. Lewis, A. Tahraoui, M. Matalla, O. Krüger, F. Bastiman, H. Riechert, and L. Geelhaar

3 Autor M. Heilmann , M. Bashouti , H. Riechert , J. M. J. Lopes
Titel

Defect mediated van der Waals epitaxy of hexagonal boron nitride on graphene

Source 2D Mater. , 5 , 025004 ( 2018 )
DOI : 10.1088/2053-1583/aaa4cb | 2962 Cite : Bibtex RIS
M. Heilmann, M. Bashouti, H. Riechert, and J. M. J. Lopes

4 Autor P. Vogt , O. Brandt , H. Riechert , J. Lähnemann , O. Bierwagen
Titel

Metal-exchange catalysis in the growth of sesquioxides: towards heterostructures of transparent oxide semiconductors

Source Phys. Rev. Lett. , 119 , 196001 ( 2017 )
DOI : 10.1103/PhysRevLett.119.196001 | Download: PDF | 2925 Cite : Bibtex RIS
P. Vogt, O. Brandt, H. Riechert, J. Lähnemann, and O. Bierwagen

5 Autor H. Küpers , A. Tahraoui , R. B. Lewis , S. Rauwerdink , M. Matalla , O. Krüger , F. Bastiman , H. Riechert , L. Geelhaar
Titel

Surface preparation and patterning by nano imprint lithography for the selective area growth of GaAs nanowires on Si(111)

Source Semicond. Sci. Technol. , 32 , 115003 ( 2017 )
DOI : 10.1088/1361-6641/aa8c15 | arxiv: 1708.02454 | 2943 Cite : Bibtex RIS
H. Küpers, A. Tahraoui, R. B. Lewis, S. Rauwerdink, M. Matalla, O. Krüger, F. Bastiman, H. Riechert, and L. Geelhaar

6 Autor R. N. Wang , W. Zhang , J. Momand , I. Ronneberger , J. E. Boschker , R. Mazzarello , B. J. Kooi , H. Riechert , M. Wuttig , R. Calarco
Titel

Formation of Resonant Bonding during Growth of Ultrathin GeTe Films

Source NPG Asia Mater. , 9 , e369 ( 2017 )
DOI : 10.1038/am.2017.95 | 2777 Cite : Bibtex RIS
R. N. Wang, W. Zhang, J. Momand, I. Ronneberger, J. E. Boschker, R. Mazzarello, B. J. Kooi, H. Riechert, M. Wuttig, and R. Calarco

7 Autor J. Kamimura , P. Bogdanoff , F. F. Abdi , J. Lähnemann , R. van de Krol , H. Riechert , L. Geelhaar
Titel

Photoelectrochemical properties of GaN photoanodes with cobalt phosphate catalyst for solar water splitting in neutral electrolyte

Source J. Phys. Chem. C , 121 , 12540 ( 2017 )
DOI : 10.1021/acs.jpcc.7b02253 | 2908 Cite : Bibtex RIS
J. Kamimura, P. Bogdanoff, F. F. Abdi, J. Lähnemann, R. van de Krol, H. Riechert, and L. Geelhaar

8 Autor J. M. Wofford , S. Nakhaie , T. Krause , X. Liu , M. Ramsteiner , M. Hanke , H. Riechert , J. M. J. Lopes
Titel

A hybrid MBE-based growth method for large-area synthesis of stacked hexagonal boron nitride/graphene heterostructures

Source Sci. Rep. , 7 , 43644 ( 2017 )
DOI : 10.1038/srep43644 | Download: PDF | 2865 Cite : Bibtex RIS
J. M. Wofford, S. Nakhaie, T. Krause, X. Liu, M. Ramsteiner, M. Hanke, H. Riechert, and J. M. J. Lopes

9 Autor C. Chèze , F. Feix , M. Anikeeva , T. Schulz , M. Albrecht , H. Riechert , O. Brandt , R. Calarco
Titel

In/GaN(0001)- (√3 × √3) R30° adsorbate structure as a template for embedded (In,Ga)N/GaN monolayers and short-period superlattices

Source Appl. Phys. Lett. , 110 , 072104 ( 2017 )
DOI : 10.1063/1.4976198 | Download: PDF | 2878 Cite : Bibtex RIS
C. Chèze, F. Feix, M. Anikeeva, T. Schulz, M. Albrecht, H. Riechert, O. Brandt, and R. Calarco

10 Autor J. Kamimura , P. Bogdanoff , M. Ramsteiner , P. Corfdir , F. Feix , L. Geelhaar , H. Riechert
Titel

p-type doping of GaN nanowires characterized by photoelectrochemical measurements

Source Nano Lett. , 17 , 1529 ( 2017 )
DOI : 10.1021/acs.nanolett.6b04560 | 2820 Cite : Bibtex RIS
J. Kamimura, P. Bogdanoff, M. Ramsteiner, P. Corfdir, F. Feix, L. Geelhaar, and H. Riechert