Band gap widening and phonon behavior of cubic single-crystalline (In,Ga)2O3 alloy films

@article{ author = { J. Feldl and Martin Feneberg and A. Papadogianni and J. Lähnemann and Takahiro Nagata and O. Bierwagen and Rüdiger Goldhahn and M. Ramsteiner }, title = { Band gap widening and phonon behavior of cubic single-crystalline (In,Ga)2O3 alloy films }, journal = { Applied Physics Letters }, volume = { 119 }, year = { 2021 }, pages = { 042101 } }

TY - JOUR AU - J. Feldl AU - Martin Feneberg AU - A. Papadogianni AU - J. Lähnemann AU - Takahiro Nagata AU - O. Bierwagen AU - Rüdiger Goldhahn AU - M. Ramsteiner TI - Band gap widening and phonon behavior of cubic single-crystalline (In,Ga)2O3 alloy films JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 119 SP - 042101 PY - 2021/07/29

Beam damage of single semiconductor nanowires during X-ray nano beam diffraction experiments

@article{ author = { A. AlHassan and J. Lähnemann and A. Davtyan and M. Al-Humaidi and J. Herranz and D. Bahrami and T. Anjum and F. Bertram and A. B. Dey and L. Geelhaar and U. Pietsch }, title = { Beam damage of single semiconductor nanowires during X-ray nano beam diffraction experiments }, journal = { Journal of Synchrotron Radiation }, volume = { 27 }, year = { 2020 }, pages = { 1200 } }

TY - JOUR AU - A. AlHassan AU - J. Lähnemann AU - A. Davtyan AU - M. Al-Humaidi AU - J. Herranz AU - D. Bahrami AU - T. Anjum AU - F. Bertram AU - A. B. Dey AU - L. Geelhaar AU - U. Pietsch TI - Beam damage of single semiconductor nanowires during X-ray nano beam diffraction experiments JF - Journal of Synchrotron Radiation JA - J. Synchrotron Rad. J1 - JSR VL - 27 SP - 1200 PY - 2020/08/13

Coalescence, crystallographic orientation and luminescence of ZnO nanowires grown on Si(001) by chemical vapour transport

@article{ author = { S. Fernández-Garrido and C. Pisador and J. Lähnemann and S. Lazic and A. Ruiz and A. Redondo-Cubero }, title = { Coalescence, crystallographic orientation and luminescence of ZnO nanowires grown on Si(001) by chemical vapour transport }, journal = { Nanotechnology }, volume = { 31 }, year = { 2020 }, pages = { 475603 } }

TY - JOUR AU - S. Fernández-Garrido AU - C. Pisador AU - J. Lähnemann AU - S. Lazic AU - A. Ruiz AU - A. Redondo-Cubero TI - Coalescence, crystallographic orientation and luminescence of ZnO nanowires grown on Si(001) by chemical vapour transport JF - Nanotechnology JA - Nanotechnology J1 - NAN VL - 31 SP - 475603 PY - 2020/08/10

Spatially-resolved luminescence and crystal structure of single core-shell nanowires measured in the as-grown geometry

@article{ author = { A. AlHassan and J. Lähnemann and S. Leake and H. Küpers and M. Niehle and D. Bahrami and F. Bertram and R. B. Lewis and A. Davtyan and T. U. Schülli and L. Geelhaar and U. Pietsch }, title = { Spatially-resolved luminescence and crystal structure of single core-shell nanowires measured in the as-grown geometry }, journal = { Nanotechnology }, volume = { 31 }, year = { 2020 }, pages = { 214002 } }

TY - JOUR AU - A. AlHassan AU - J. Lähnemann AU - S. Leake AU - H. Küpers AU - M. Niehle AU - D. Bahrami AU - F. Bertram AU - R. B. Lewis AU - A. Davtyan AU - T. U. Schülli AU - L. Geelhaar AU - U. Pietsch TI - Spatially-resolved luminescence and crystal structure of single core-shell nanowires measured in the as-grown geometry JF - Nanotechnology JA - Nanotechnology J1 - NAN VL - 31 SP - 214002 PY - 2020/03/10

Self-assembly of well-separated AlN nanowires directly on sputtered metallic TiN films

@article{ author = { M. Azadmand and T. Auzelle and J. Lähnemann and G. Gao and L. Nicolai and M. Ramsteiner and A. Trampert and S. Sanguinetti and O. Brandt and L. Geelhaar }, title = { Self-assembly of well-separated AlN nanowires directly on sputtered metallic TiN films }, journal = { Physica Status Solidi Rapid Research Letters }, volume = { 14 }, year = { 2020 }, pages = { 1900615 } }

TY - JOUR AU - M. Azadmand AU - T. Auzelle AU - J. Lähnemann AU - G. Gao AU - L. Nicolai AU - M. Ramsteiner AU - A. Trampert AU - S. Sanguinetti AU - O. Brandt AU - L. Geelhaar TI - Self-assembly of well-separated AlN nanowires directly on sputtered metallic TiN films JF - Physica Status Solidi Rapid Research Letters JA - Phys. Status Solidi-Rapid Res. Lett. J1 - VL - 14 SP - 1900615 PY - 2020/03/01

Assessment of AlGaN/AlN superlattices on GaN nanowires as active region of electron-pumped ultraviolet sources

@article{ author = { I. Dimkou and A. Harikumar and F. Donatini and J. Lähnemann and M. I. den Hertog and C. Bougerol and E. Bellet-Amalric and N. Mollard and A. Ajay and G. Ledoux and S. T. Purcell and E. Monroy }, title = { Assessment of AlGaN/AlN superlattices on GaN nanowires as active region of electron-pumped ultraviolet sources }, journal = { Nanotechnology }, volume = { 31 }, year = { 2020 }, pages = { 204001 } }

TY - JOUR AU - I. Dimkou AU - A. Harikumar AU - F. Donatini AU - J. Lähnemann AU - M. I. den Hertog AU - C. Bougerol AU - E. Bellet-Amalric AU - N. Mollard AU - A. Ajay AU - G. Ledoux AU - S. T. Purcell AU - E. Monroy TI - Assessment of AlGaN/AlN superlattices on GaN nanowires as active region of electron-pumped ultraviolet sources JF - Nanotechnology JA - Nanotechnology J1 - NAN VL - 31 SP - 204001 PY - 2020/02/27

Coaxial GaAs/(In,Ga)As dot-in-a-well nanowire heterostructures for electrically driven infrared light generation on Si in the telecommunication O band

@article{ author = { J. Herranz and P. Corfdir and E. Luna and U. Jahn and R. B. Lewis and L. Schrottke and J. Lähnemann and A. Tahraoui and A. Trampert and O. Brandt and L. Geelhaar }, title = { Coaxial GaAs/(In,Ga)As dot-in-a-well nanowire heterostructures for electrically driven infrared light generation on Si in the telecommunication O band }, journal = { ACS Applied Nano Materials }, volume = { 3 }, year = { 2020 }, pages = { 165 } }

TY - JOUR AU - J. Herranz AU - P. Corfdir AU - E. Luna AU - U. Jahn AU - R. B. Lewis AU - L. Schrottke AU - J. Lähnemann AU - A. Tahraoui AU - A. Trampert AU - O. Brandt AU - L. Geelhaar TI - Coaxial GaAs/(In,Ga)As dot-in-a-well nanowire heterostructures for electrically driven infrared light generation on Si in the telecommunication O band JF - ACS Applied Nano Materials JA - ACS Appl. Nano Mater. J1 - VL - 3 SP - 165 PY - 2020/01/24

Plasma-assisted molecular beam epitaxy of NiO on GaN(00.1)

@article{ author = { M. Budde and T. Remmele and C. Tschammer and J. Feldl and P. Franz and J. Lähnemann and Z. Cheng and M. Hanke and M. Ramsteiner and M. Albrecht and O. Bierwagen }, title = { Plasma-assisted molecular beam epitaxy of NiO on GaN(00.1) }, journal = { Journal of Applied Physics }, volume = { 127 }, year = { 2020 }, pages = { 015306 } }

TY - JOUR AU - M. Budde AU - T. Remmele AU - C. Tschammer AU - J. Feldl AU - P. Franz AU - J. Lähnemann AU - Z. Cheng AU - M. Hanke AU - M. Ramsteiner AU - M. Albrecht AU - O. Bierwagen TI - Plasma-assisted molecular beam epitaxy of NiO on GaN(00.1) JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 127 SP - 015306 PY - 2020/01/06

The electrical conductivity tensor of beta-Ga2O3 analyzed by van der Pauw measurements: Inherent anisotropy, off-diagonal element, and the impact of grain boundaries

@article{ author = { C. Golz and Z. Galazka and J. Lähnemann and V. Hortelano and F. Hatami and W.T. Masselink and O. Bierwagen }, title = { The electrical conductivity tensor of beta-Ga2O3 analyzed by van der Pauw measurements: Inherent anisotropy, off-diagonal element, and the impact of grain boundaries }, journal = { Physical Review Materials }, volume = { 3 }, year = { 2019 }, pages = { 124604 } }

TY - JOUR AU - C. Golz AU - Z. Galazka AU - J. Lähnemann AU - V. Hortelano AU - F. Hatami AU - W.T. Masselink AU - O. Bierwagen TI - The electrical conductivity tensor of beta-Ga2O3 analyzed by van der Pauw measurements: Inherent anisotropy, off-diagonal element, and the impact of grain boundaries JF - Physical Review Materials JA - Phys. Rev. Mater. J1 - VL - 3 SP - 124604 PY - 2019/12/27

Determination of the Carrier Diffusion Length in GaN from Cathodoluminescence Maps Around Threading Dislocations: Fallacies and Opportunities

@article{ author = { V. M. Kaganer and J. Lähnemann and C. Pfüller and K. K. Sabelfeld and A. E. Kireeva and O. Brandt }, title = { Determination of the Carrier Diffusion Length in GaN from Cathodoluminescence Maps Around Threading Dislocations: Fallacies and Opportunities }, journal = { Physical Review Applied }, volume = { 12 }, year = { 2019 }, pages = { 054038 } }

TY - JOUR AU - V. M. Kaganer AU - J. Lähnemann AU - C. Pfüller AU - K. K. Sabelfeld AU - A. E. Kireeva AU - O. Brandt TI - Determination of the Carrier Diffusion Length in GaN from Cathodoluminescence Maps Around Threading Dislocations: Fallacies and Opportunities JF - Physical Review Applied JA - Phys. Rev. Appl. J1 - VL - 12 SP - 054038 PY - 2019/11/15