Senior Scientist
Telefon: +49 30 20377 450
Raum: 0530
Email: jonas@pdi-berlin.de
Abteilung: Semiconductor Spectroscopy
Core research areas: Nanoanalytics , III-V nanowires for optoelectronics
Forschungsschwerpunkt:
Luminescence spectroscopy, Analytical scanning electron microscopy, Semiconductor nanowires, III-V semiconductors for optoelectronic applications, Thin-film solar cells
1 | Autor | T. Auzelle , C. Sinito , J. Lähnemann , G. Gao , T. Flissikowski , A. Trampert , O. Brandt , S. Fernández-Garrido |
Titel |
Interface recombination in Ga- and N-polar GaN/(Al,Ga)N quantum wells grown by molecular beam epitaxy |
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Source | Phys. Rev. Appl. , 17 , 4 ( 2022 ) | |
DOI : 10.1103/PhysRevApplied.17.044030 | arxiv: 2111.12969 | Cite : Bibtex RIS |
2 | Autor | A. Papadogianni , C. Wouters , R. Schewski , J. Feldl , J. Lähnemann , T. Nagata , M. Feneberg , E. Kluth , R. Goldhahn , M. Ramsteiner , M. Albrecht , O. Bierwagen |
Titel |
Molecular beam epitaxy of single-crystalline bixbyite (In1-xGax)2O3 films (x≤0.18): Structural properties and consequences of compositional inhomogeneity |
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Source | Phys. Rev. Mater. , 6 , 033604 ( 2022 ) | |
DOI : 10.1103/PhysRevMaterials.6.033604 | arxiv: 2106.09612 | Cite : Bibtex RIS |
3 | Autor | J. Lähnemann , V. M. Kaganer , K. K. Sabelfeld , A. E. Kireeva , U. Jahn , C. Chèze , R. Calarco , O. Brandt |
Titel |
Carrier diffusion in GaN: A cathodoluminescence study. III: Nature of nonradiative recombination at threading dislocations |
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Source | Phys. Rev. Appl. , 17 , 024019 ( 2022 ) | |
DOI : 10.1103/PhysRevApplied.17.024019 | arxiv: 2009.14634 | Cite : Bibtex RIS |
4 | Autor | O. Brandt , V. M. Kaganer , J. Lähnemann , T. Flissikowski , C. Pfüller , K. K. Sabelfeld , A. E. Kireeva , C. Chèze , R. Calarco , H. T. Grahn , U. Jahn |
Titel |
Carrier diffusion in GaN: A cathodoluminescence study. II: Ambipolar vs. exciton diffusion |
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Source | Phys. Rev. Appl. , 17 , 024018 ( 2022 ) | |
DOI : 10.1103/PhysRevApplied.17.024018 | arxiv: 2009.13983 | Cite : Bibtex RIS |
5 | Autor | U. Jahn , V. M. Kaganer , K. K. Sabelfeld , A. E. Kireeva , J. Lähnemann , C. Pfüller , C. Chèze , K. Biermann , R. Calarco , O. Brandt |
Titel |
Carrier diffusion in GaN: A cathodoluminescence study. I: Temperature-dependent generation volume |
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Source | Phys. Rev. Appl. , 17 , 024017 ( 2022 ) | |
DOI : 10.1103/PhysRevApplied.17.024017 | arxiv: 2002.08713 | Cite : Bibtex RIS |
6 | Autor | L. van Deurzen , M. Gomez Ruiz , K. Lee , H. Turski , S. Bharadwaj , R. Page , V. Protasenko , H. G. Xing , J. Lähnemann , D. Jena |
Titel |
Dislocation and Indium Droplet Related Emission Inhomogeneities in InGaN LEDs |
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Source | J. Phys. D: Appl. Phys. , 54 , 495106 ( 2021 ) | |
DOI : 10.1088/1361-6463/ac2446 | arxiv: 2106.10809 | Cite : Bibtex RIS |
7 | Autor | P. Wojnar , J. Płachta , A. Reszka , J. Lähnemann , A. Kaleta , S. Kret , P. Baranowski , M. Wójcik , B. J. Kowalski , L. T. Baczewski , G. Karczewski , T. Wojtowicz |
Titel |
Near-infrared emission from spatially indirect excitons in type II ZnTe/CdSe/(Zn,Mg)Te core/double-shell nanowires |
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Source | Nanotechnology , 32 , 495202 ( 2021 ) | |
DOI : 10.1088/1361-6528/ac218c | arxiv: 2109.00272 | Cite : Bibtex RIS |
8 | Autor | J. Feldl , M. Feneberg , A. Papadogianni , J. Lähnemann , T. Nagata , O. Bierwagen , R. Goldhahn , M. Ramsteiner |
Titel |
Band gap widening and phonon behavior of cubic single-crystalline (In,Ga)2O3 alloy films |
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Source | Appl. Phys. Lett. , 119 , 042101 ( 2021 ) | |
DOI : 10.1063/5.0056532 | Download: PDF | Cite : Bibtex RIS |
9 | Autor | A. AlHassan , J. Lähnemann , A. Davtyan , M. Al-Humaidi , J. Herranz , D. Bahrami , T. Anjum , F. Bertram , A. B. Dey , L. Geelhaar , U. Pietsch |
Titel |
Beam damage of single semiconductor nanowires during X-ray nano beam diffraction experiments |
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Source | J. Synchrotron Rad. , 27 , 1200 ( 2020 ) | |
DOI : 10.1107/S1600577520009789 | Download: PDF | Cite : Bibtex RIS |
10 | Autor | S. Fernández-Garrido , C. Pisador , J. Lähnemann , S. Lazic , A. Ruiz , A. Redondo-Cubero |
Titel |
Coalescence, crystallographic orientation and luminescence of ZnO nanowires grown on Si(001) by chemical vapour transport |
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Source | Nanotechnology , 31 , 475603 ( 2020 ) | |
DOI : 10.1088/1361-6528/abadc8 | arxiv: 2005.14704 | Cite : Bibtex RIS |