Dr. Oliver Bierwagen

Photoelectron spectroscopic study of electronic states and surface structure of an in situ cleaved In2O3 (111) single crystal

@article{ author = { T. Nagata and O. Bierwagen and Z. Galazka and M. Imura and S. Ueda and Y. Yamashita and T. Chikyow }, title = { Photoelectron spectroscopic study of electronic states and surface structure of an in situ cleaved In2O3 (111) single crystal }, journal = { Japanese Journal of Applied Physics, Part 1 }, volume = { 58 }, year = { 2019 }, pages = { SDDG06 } }

TY - JOUR AU - T. Nagata AU - O. Bierwagen AU - Z. Galazka AU - M. Imura AU - S. Ueda AU - Y. Yamashita AU - T. Chikyow TI - Photoelectron spectroscopic study of electronic states and surface structure of an in situ cleaved In2O3 (111) single crystal JF - Japanese Journal of Applied Physics, Part 1 JA - Jpn. J. Appl. Phys., Part 1 J1 - JJAP1 VL - 58 SP - SDDG06 PY - 2019/05/21

Quantitative subcompound-mediated reaction model for the molecular beam epitaxy of III-VI and IV-VI thin films: Applied to Ga2O3, In2O3, and SnO2

@article{ author = { P. Vogt and O. Bierwagen }, title = { Quantitative subcompound-mediated reaction model for the molecular beam epitaxy of III-VI and IV-VI thin films: Applied to Ga2O3, In2O3, and SnO2 }, journal = { Physical Review Materials }, volume = { 2 }, year = { 2018 }, pages = { 120401(R) } }

TY - JOUR AU - P. Vogt AU - O. Bierwagen TI - Quantitative subcompound-mediated reaction model for the molecular beam epitaxy of III-VI and IV-VI thin films: Applied to Ga2O3, In2O3, and SnO2 JF - Physical Review Materials JA - Phys. Rev. Mater. J1 - VL - 2 SP - 120401(R) PY - 2018/12/20

Faceting and metal-exchange catalysis in (010) β-Ga2O3 thin films homoepitaxially grown by plasma-assisted molecular beam epitaxy

@article{ author = { P. Mazzolini and P. Vogt and R. Schewski and C. Wouters and M. Albrecht and O. Bierwagen }, title = { Faceting and metal-exchange catalysis in (010) β-Ga2O3 thin films homoepitaxially grown by plasma-assisted molecular beam epitaxy }, journal = { APL Materials }, volume = { 7 }, year = { 2018 }, pages = { 022511 } }

TY - JOUR AU - P. Mazzolini AU - P. Vogt AU - R. Schewski AU - C. Wouters AU - M. Albrecht AU - O. Bierwagen TI - Faceting and metal-exchange catalysis in (010) β-Ga2O3 thin films homoepitaxially grown by plasma-assisted molecular beam epitaxy JF - APL Materials JA - APL Mater. J1 - APLM VL - 7 SP - 022511 PY - 2018/12/14

Anisotropic optical properties of highly doped rutile SnO2: Valence band contributions to the Burstein-Moss shift

@article{ author = { M. Feneberg and C. Lidig and M.E. White and M.Y. Tsai and J.S. Speck and O. Bierwagen and Z. Galazka and R. Goldhahn }, title = { Anisotropic optical properties of highly doped rutile SnO2: Valence band contributions to the Burstein-Moss shift }, journal = { APL Materials }, volume = { 7 }, year = { 2018 }, pages = { 022508 } }

TY - JOUR AU - M. Feneberg AU - C. Lidig AU - M.E. White AU - M.Y. Tsai AU - J.S. Speck AU - O. Bierwagen AU - Z. Galazka AU - R. Goldhahn TI - Anisotropic optical properties of highly doped rutile SnO2: Valence band contributions to the Burstein-Moss shift JF - APL Materials JA - APL Mater. J1 - APLM VL - 7 SP - 022508 PY - 2018/12/13

Reduced interface roughness scattering in InGaAs/InAlAs quantum cascade lasers grown on (411)A InP substrates

@article{ author = { M.P. Semtsiv and S.S. Kurlov and D. Alcer and Y. Matsuoka and J.-F. Kischkat and O. Bierwagen and W.T. Masselink }, title = { Reduced interface roughness scattering in InGaAs/InAlAs quantum cascade lasers grown on (411)A InP substrates }, journal = { Applied Physics Letters }, volume = { 113 }, year = { 2018 }, pages = { 121110 } }

TY - JOUR AU - M.P. Semtsiv AU - S.S. Kurlov AU - D. Alcer AU - Y. Matsuoka AU - J.-F. Kischkat AU - O. Bierwagen AU - W.T. Masselink TI - Reduced interface roughness scattering in InGaAs/InAlAs quantum cascade lasers grown on (411)A InP substrates JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 113 SP - 121110 PY - 2018/09/19

Structural, optical, and electrical properties of unintentionally doped NiO layers grown on MgO by plasma-assisted molecular beam epitaxy

@article{ author = { M. Budde and C. Tschammer and P. Franz and J. Feldl and M. Ramsteiner and R. Goldhahn and M. Feneberg and N. Barsan and A. Oprea and O. Bierwagen }, title = { Structural, optical, and electrical properties of unintentionally doped NiO layers grown on MgO by plasma-assisted molecular beam epitaxy }, journal = { Journal of Applied Physics }, volume = { 123 }, year = { 2018 }, pages = { 195301 } }

TY - JOUR AU - M. Budde AU - C. Tschammer AU - P. Franz AU - J. Feldl AU - M. Ramsteiner AU - R. Goldhahn AU - M. Feneberg AU - N. Barsan AU - A. Oprea AU - O. Bierwagen TI - Structural, optical, and electrical properties of unintentionally doped NiO layers grown on MgO by plasma-assisted molecular beam epitaxy JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 123 SP - 195301 PY - 2018/05/15

The inherent transport anisotropy of rutile tin dioxide (SnO2) determined by van der Pauw measurements and its consequences for applications

@article{ author = { O. Bierwagen and Z. Galazka }, title = { The inherent transport anisotropy of rutile tin dioxide (SnO2) determined by van der Pauw measurements and its consequences for applications }, journal = { Applied Physics Letters }, volume = { 112 }, year = { 2018 }, pages = { 092105 } }

TY - JOUR AU - O. Bierwagen AU - Z. Galazka TI - The inherent transport anisotropy of rutile tin dioxide (SnO2) determined by van der Pauw measurements and its consequences for applications JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 112 SP - 092105 PY - 2018/02/27

Electronic and transport properties of Li-doped NiO epitaxial thin films

@article{ author = { J. Y. Zhang and W. W. Li and R. L. Z. Hoye and J. L. MacManus-Driscoll and M. Budde and O. Bierwagen and L. Wang and Y. Du and M. J. Wahila and L. F. J. Piper and T.-L. Lee and H. J. Edwards and V. R. Dhanak and K. H. L. Zhang }, title = { Electronic and transport properties of Li-doped NiO epitaxial thin films }, journal = { Journal of Materials Chemistry C }, volume = { 6 }, year = { 2018 }, pages = { 2275 } }

TY - JOUR AU - J. Y. Zhang AU - W. W. Li AU - R. L. Z. Hoye AU - J. L. MacManus-Driscoll AU - M. Budde AU - O. Bierwagen AU - L. Wang AU - Y. Du AU - M. J. Wahila AU - L. F. J. Piper AU - T.-L. Lee AU - H. J. Edwards AU - V. R. Dhanak AU - K. H. L. Zhang TI - Electronic and transport properties of Li-doped NiO epitaxial thin films JF - Journal of Materials Chemistry C JA - J. Mater. Chem. C J1 - VL - 6 SP - 2275 PY - 2018/01/25

Towards understanding the cross sensitivity of In2O3-based ozone sensors: Effects of O3, O2 and H2O adsorption at In2O3(111) surfaces

@article{ author = { T. Berthold and S. Katzer and J. Rombach and S. Krischok and O. Bierwagen and M. Himmerlich }, title = { Towards understanding the cross sensitivity of In2O3-based ozone sensors: Effects of O3, O2 and H2O adsorption at In2O3(111) surfaces }, journal = { Physica Status Solidi B }, volume = { 255 }, year = { 2018 }, pages = { 1700324 } }

TY - JOUR AU - T. Berthold AU - S. Katzer AU - J. Rombach AU - S. Krischok AU - O. Bierwagen AU - M. Himmerlich TI - Towards understanding the cross sensitivity of In2O3-based ozone sensors: Effects of O3, O2 and H2O adsorption at In2O3(111) surfaces JF - Physica Status Solidi B JA - Phys. Status Solidi B J1 - PSSB VL - 255 SP - 1700324 PY - 2018/01/01

Structural and electron transport properties of single-crystalline In2O3 films compensated by Ni acceptors

@article{ author = { A. Papadogianni and L. Kirste and O. Bierwagen }, title = { Structural and electron transport properties of single-crystalline In2O3 films compensated by Ni acceptors }, journal = { Applied Physics Letters }, volume = { 111 }, year = { 2017 }, pages = { 262103 } }

TY - JOUR AU - A. Papadogianni AU - L. Kirste AU - O. Bierwagen TI - Structural and electron transport properties of single-crystalline In2O3 films compensated by Ni acceptors JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 111 SP - 262103 PY - 2017/12/27