Band gap widening and phonon behavior of cubic single-crystalline (In,Ga)2O3 alloy films

@article{ author = { J. Feldl and M. Feneberg and A. Papadogianni and J. Lähnemann and T. Nagata and O. Bierwagen and R. Goldhahn and M. Ramsteiner }, title = { Band gap widening and phonon behavior of cubic single-crystalline (In,Ga)2O3 alloy films }, journal = { Applied Physics Letters }, volume = { 119 }, year = { 2021 }, pages = { 042101 } }

TY - JOUR AU - J. Feldl AU - M. Feneberg AU - A. Papadogianni AU - J. Lähnemann AU - T. Nagata AU - O. Bierwagen AU - R. Goldhahn AU - M. Ramsteiner TI - Band gap widening and phonon behavior of cubic single-crystalline (In,Ga)2O3 alloy films JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 119 SP - 042101 PY - 2021/07/29

Conduction Mechanisms in Epitaxial NiO/Graphene Gas Sensors

@article{ author = { S. Niavol and M. Budde and A. Papadogianni and M. Heilmann and H. Milani Moghaddam and C. M. Aldao and G. Ligorio and E. J. W. List-Kratochvil and J. M. J. Lopes and N. Barsan and O. Bierwagen and F. Schipani }, title = { Conduction Mechanisms in Epitaxial NiO/Graphene Gas Sensors }, journal = { Sensors & Actuators B }, volume = { 325 }, year = { 2020 }, pages = { 128797 } }

TY - JOUR AU - S. Niavol AU - M. Budde AU - A. Papadogianni AU - M. Heilmann AU - H. Milani Moghaddam AU - C. M. Aldao AU - G. Ligorio AU - E. J. W. List-Kratochvil AU - J. M. J. Lopes AU - N. Barsan AU - O. Bierwagen AU - F. Schipani TI - Conduction Mechanisms in Epitaxial NiO/Graphene Gas Sensors JF - Sensors & Actuators B JA - Sens. Actuators B Chem. J1 - VL - 325 SP - 128797 PY - 2020/08/24

Two-dimensional electron gas of the In2O3 surface: Enhanced thermopower, electrical transport properties, and reduction by adsorbates or compensating acceptor doping

@article{ author = { A. Papadogianni and J. Rombach and T. Berthold and V. Polyakov and S. Krischok and M. Himmerlich and O. Bierwagen }, title = { Two-dimensional electron gas of the In2O3 surface: Enhanced thermopower, electrical transport properties, and reduction by adsorbates or compensating acceptor doping }, journal = { Physical Review B: Solid State }, volume = { 102 }, year = { 2020 }, pages = { 075301 } }

TY - JOUR AU - A. Papadogianni AU - J. Rombach AU - T. Berthold AU - V. Polyakov AU - S. Krischok AU - M. Himmerlich AU - O. Bierwagen TI - Two-dimensional electron gas of the In2O3 surface: Enhanced thermopower, electrical transport properties, and reduction by adsorbates or compensating acceptor doping JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 102 SP - 075301 PY - 2020/08/03

The Itinerant 2-Dimensional Electron Gas of the Indium Oxide (111) Surface: Implications for Carbon‐ and Energy‐Conversion Applications

@article{ author = { V. Jovic and S. Moser and A. Papadogianni and R.J. Koch and A. Rossi and C. Jozwiak and A. Bostwick and E. Rotenberg and J.V. Kennedy and O. Bierwagen and K.E. Smith }, title = { The Itinerant 2-Dimensional Electron Gas of the Indium Oxide (111) Surface: Implications for Carbon‐ and Energy‐Conversion Applications }, journal = { Small }, volume = { 16 }, year = { 2019 }, pages = { 1903321 } }

TY - JOUR AU - V. Jovic AU - S. Moser AU - A. Papadogianni AU - R.J. Koch AU - A. Rossi AU - C. Jozwiak AU - A. Bostwick AU - E. Rotenberg AU - J.V. Kennedy AU - O. Bierwagen AU - K.E. Smith TI - The Itinerant 2-Dimensional Electron Gas of the Indium Oxide (111) Surface: Implications for Carbon‐ and Energy‐Conversion Applications JF - Small JA - Small J1 - VL - 16 SP - 1903321 PY - 2019/09/05

Conductance Model for Single-Crystalline/Compact Metal Oxide Gas Sensing Layers in the Non-Degenerate Limit: Example of Epitaxial SnO2(101)

@article{ author = { C.E. Simion and F. Schipani and A. Papadogianni and A. Stanoiu and M. Budde and A. Oprea and U. Weimar and O. Bierwagen and N. Barsan }, title = { Conductance Model for Single-Crystalline/Compact Metal Oxide Gas Sensing Layers in the Non-Degenerate Limit: Example of Epitaxial SnO2(101) }, journal = { ACS Sensors }, volume = { 4 }, year = { 2019 }, pages = { 2420 } }

TY - JOUR AU - C.E. Simion AU - F. Schipani AU - A. Papadogianni AU - A. Stanoiu AU - M. Budde AU - A. Oprea AU - U. Weimar AU - O. Bierwagen AU - N. Barsan TI - Conductance Model for Single-Crystalline/Compact Metal Oxide Gas Sensing Layers in the Non-Degenerate Limit: Example of Epitaxial SnO2(101) JF - ACS Sensors JA - ACS Sens. J1 - VL - 4 SP - 2420 PY - 2019/08/15

Processing Strategies for High-Performance Schottky Contacts on n-type Oxide Semiconductors: Insights from In2O3

@article{ author = { J. Michel and D. Splith and J. Rombach and A. Papadogianni and T. Berthold and S. Krischok and M. Grundmann and O. Bierwagen and H. von Wenckstern and M. Himmerlich }, title = { Processing Strategies for High-Performance Schottky Contacts on n-type Oxide Semiconductors: Insights from In2O3 }, journal = { ACS Applied Materials and Interfaces }, volume = { 11 }, year = { 2019 }, pages = { 27073 } }

TY - JOUR AU - J. Michel AU - D. Splith AU - J. Rombach AU - A. Papadogianni AU - T. Berthold AU - S. Krischok AU - M. Grundmann AU - O. Bierwagen AU - H. von Wenckstern AU - M. Himmerlich TI - Processing Strategies for High-Performance Schottky Contacts on n-type Oxide Semiconductors: Insights from In2O3 JF - ACS Applied Materials and Interfaces JA - ACS Appl. Mater. Interfaces J1 - VL - 11 SP - 27073 PY - 2019/07/04

Structural and electron transport properties of single-crystalline In2O3 films compensated by Ni acceptors

@article{ author = { A. Papadogianni and L. Kirste and O. Bierwagen }, title = { Structural and electron transport properties of single-crystalline In2O3 films compensated by Ni acceptors }, journal = { Applied Physics Letters }, volume = { 111 }, year = { 2017 }, pages = { 262103 } }

TY - JOUR AU - A. Papadogianni AU - L. Kirste AU - O. Bierwagen TI - Structural and electron transport properties of single-crystalline In2O3 films compensated by Ni acceptors JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 111 SP - 262103 PY - 2017/12/27

Defect compensation by Cr vacancies and oxygen interstitials in Ti4+-doped Cr2O3 epitaxial thin films

@article{ author = { T. C. Kaspar and P. V. Sushko and M. E. Bowden and S. M. Heald and A. Papadogianni and C. Tschammer and O. Bierwagen and S. A. Chambers }, title = { Defect compensation by Cr vacancies and oxygen interstitials in Ti4+-doped Cr2O3 epitaxial thin films }, journal = { Physical Review B: Solid State }, volume = { 94 }, year = { 2016 }, pages = { 155409 } }

TY - JOUR AU - T. C. Kaspar AU - P. V. Sushko AU - M. E. Bowden AU - S. M. Heald AU - A. Papadogianni AU - C. Tschammer AU - O. Bierwagen AU - S. A. Chambers TI - Defect compensation by Cr vacancies and oxygen interstitials in Ti4+-doped Cr2O3 epitaxial thin films JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 94 SP - 155409 PY - 2016/10/07

The role of surface electron accumulation and bulk doping for gas-sensing explored with single-crystalline In2O3 thin films

@article{ author = { J. Rombach and A. Papadogianni and M. Mischo and V. Cimalla and L. Kirste and O. Ambacher and T. Berthold and S. Krischok and M. Himmerlich and Sören Selve and O. Bierwagen }, title = { The role of surface electron accumulation and bulk doping for gas-sensing explored with single-crystalline In2O3 thin films }, journal = { Sensors & Actuators B }, volume = { 236 }, year = { 2016 }, pages = { 909 } }

TY - JOUR AU - J. Rombach AU - A. Papadogianni AU - M. Mischo AU - V. Cimalla AU - L. Kirste AU - O. Ambacher AU - T. Berthold AU - S. Krischok AU - M. Himmerlich AU - Sören Selve AU - O. Bierwagen TI - The role of surface electron accumulation and bulk doping for gas-sensing explored with single-crystalline In2O3 thin films JF - Sensors & Actuators B JA - Sens. Actuators B Chem. J1 - VL - 236 SP - 909 PY - 2016/03/18

Hall and Seebeck measurements estimate the thickness of a (buried) carrier system: Identifying interface electrons in In-doped SnO2 films

@article{ author = { A. Papadogianni and M.E. White and J.S.Speck and Z. Galazka and O. Bierwagen }, title = { Hall and Seebeck measurements estimate the thickness of a (buried) carrier system: Identifying interface electrons in In-doped SnO2 films }, journal = { Applied Physics Letters }, volume = { 107 }, year = { 2015 }, pages = { 252105 } }

TY - JOUR AU - A. Papadogianni AU - M.E. White AU - J.S.Speck AU - Z. Galazka AU - O. Bierwagen TI - Hall and Seebeck measurements estimate the thickness of a (buried) carrier system: Identifying interface electrons in In-doped SnO2 films JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 107 SP - 252105 PY - 2015/12/24