Alexandra Papadogianni (D)

Perovskite Sr-doped LaCrO3 as a new p-type transparent conducting oxide

@article{ author = { K. H. L. Zhang and Y. Du and A. Papadogianni and O. Bierwagen and S. Sallis and L. F. J. Piper and M. E. Bowden and V. Shutthanandan and P. V. Sushko and S. A. Chambers }, title = { Perovskite Sr-doped LaCrO3 as a new p-type transparent conducting oxide }, journal = { Advanced Materials }, volume = { 27 }, year = { 2015 }, pages = { 5191 } }

TY - JOUR AU - K. H. L. Zhang AU - Y. Du AU - A. Papadogianni AU - O. Bierwagen AU - S. Sallis AU - L. F. J. Piper AU - M. E. Bowden AU - V. Shutthanandan AU - P. V. Sushko AU - S. A. Chambers TI - Perovskite Sr-doped LaCrO3 as a new p-type transparent conducting oxide JF - Advanced Materials JA - Adv. Mater. J1 - VL - 27 SP - 5191 PY - 2015/08/06

Step-bunched Bi2Te3 and Bi2Se3 layers epitaxially grown on high-index InP substrates

@article{ author = { Y. Takagaki and A. Papadogianni and B. Jenichen and U. Jahn and O. Bierwagen }, title = { Step-bunched Bi2Te3 and Bi2Se3 layers epitaxially grown on high-index InP substrates }, journal = { Thin Solid Films }, volume = { 580 }, year = { 2015 }, pages = { 89 } }

TY - JOUR AU - Y. Takagaki AU - A. Papadogianni AU - B. Jenichen AU - U. Jahn AU - O. Bierwagen TI - Step-bunched Bi2Te3 and Bi2Se3 layers epitaxially grown on high-index InP substrates JF - Thin Solid Films JA - Thin Solid Films J1 - TSF VL - 580 SP - 89 PY - 2015/03/30

Seebeck effect and giant linear magnetoresistance affected by conflicting n- and p-type defects-induced doping in epitaxial Bi2Te3 layers

@article{ author = { Y. Takagaki and A. Papadogianni and O. Bierwagen }, title = { Seebeck effect and giant linear magnetoresistance affected by conflicting n- and p-type defects-induced doping in epitaxial Bi2Te3 layers }, journal = { Advanced Electronic Materials }, volume = { 1 }, year = { 2015 }, pages = { 1400007 } }

TY - JOUR AU - Y. Takagaki AU - A. Papadogianni AU - O. Bierwagen TI - Seebeck effect and giant linear magnetoresistance affected by conflicting n- and p-type defects-induced doping in epitaxial Bi2Te3 layers JF - Advanced Electronic Materials JA - Adv. Electron. Mater. J1 - Online ISSN: 2199-160X VL - 1 SP - 1400007 PY - 2015/03/10