Dr. Thomas Auzelle

Scientist

Telefon: +49 30 20377 337

Raum: 0726

Email: auzelle@pdi-berlin.de

 

Abteilung: Epitaxy

Core research areas: III-V nanowires for optoelectronics

 

 

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1 Autor C. Sinito , P. Corfdir , C. Pfüller , G. Gao , J. Bartolomé Vílchez , S. Kölling , A. Rodil Doblado , U. Jahn , J. Lähnemann , T. Auzelle , J. K. Zettler , T. Flissikowski , P. Koenraad , H. T. Grahn , L. Geelhaar , S. Fernández-Garrido , O. Brandt
Titel

Absence of quantum-confined Stark effect in GaN quantum disks embedded in (Al,Ga)N nanowires grown by molecular beam epitaxy

Source Nano Lett. , 19 , 5938 ( 2019 )
DOI : 10.1021/acs.nanolett.9b01521 | arxiv: 1905.04090 | 3108 Cite : Bibtex RIS
C. Sinito, P. Corfdir, C. Pfüller, G. Gao, J. Bartolomé Vílchez, S. Kölling, A. Rodil Doblado, U. Jahn, J. Lähnemann, T. Auzelle, J. K. Zettler, T. Flissikowski, P. Koenraad, H. T. Grahn, L. Geelhaar, S. Fernández-Garrido, and O. Brandt

2 Autor T. Auzelle , F. Ullrich , S. Hietzschold , S. Brackmann , S. Hillebrandt , W. Kowalsky , E. Mankel , R. Lovrincic , S. Fernández-Garrido
Titel

Electronic Properties of air-exposed GaN(1-100) and (0001) surfaces after several device processing compatible cleaning steps

Source Appl. Surf. Sci. , 495 , 143514 ( 2019 )
DOI : 10.1016/j.apsusc.2019.07.256 | 3111 Cite : Bibtex RIS
T. Auzelle, F. Ullrich, S. Hietzschold, S. Brackmann, S. Hillebrandt, W. Kowalsky, E. Mankel, R. Lovrincic, and S. Fernández-Garrido

3 Autor S. Fernández-Garrido , T. Auzelle , J. Lähnemann , K. Wimmer , A. Tahraoui , O. Brandt
Titel

Top-down fabrication of ordered arrays of GaN nanowires by selective area sublimation

Source Nanoscale Adv. , 1 , 1893 ( 2019 )
DOI : 10.1039/c8na00369f | arxiv: 1905.04948 | 3045 Cite : Bibtex RIS
S. Fernández-Garrido, T. Auzelle, J. Lähnemann, K. Wimmer, A. Tahraoui, and O. Brandt

4 Autor G. Calabrese , G. Gao , D. v. Treeck , P. Corfdir , C. Sinito , T. Auzelle , A. Trampert , L. Geelhaar , O. Brandt , S. Fernández-Garrido
Titel

Interfacial reactions during the molecular beam epitaxy of GaN nanowires on Ti/Al2O3

Source Nanotechnol. , 30 , 114001 ( 2019 )
DOI : 10.1088/1361-6528/aaf9c5 | 3072 Cite : Bibtex RIS
G. Calabrese, G. Gao, D. v. Treeck, P. Corfdir, C. Sinito, T. Auzelle, A. Trampert, L. Geelhaar, O. Brandt, and S. Fernández-Garrido

5 Autor T. Auzelle , G. Calabrese , S. Fernández-Garrido
Titel

Tuning the orientation of the top-facets of GaN nanowires in molecular beam epitaxy by thermal decomposition

Source Phys. Rev. Mater. , 3 , 013402 ( 2019 )
DOI : 10.1103/PhysRevMaterials.3.013402 | 3053 Cite : Bibtex RIS
T. Auzelle, G. Calabrese, and S. Fernández-Garrido

6 Autor P. Corfdir , G. Calabrese , A. Laha , T. Auzelle , L. Geelhaar , O. Brandt , S. Fernández-Garrido
Titel

Monitoring the formation of GaN nanowires in molecular beam epitaxy by polarization-resolved optical reflectometry

Source CrystEngComm , 20 , 3202 ( 2018 )
DOI : 10.1039/C8CE00431E | 3006 Cite : Bibtex RIS
P. Corfdir, G. Calabrese, A. Laha, T. Auzelle, L. Geelhaar, O. Brandt, and S. Fernández-Garrido

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