Scientist
Telefon: +49 30 20377 337
Raum: 0726
Email: auzelle@pdi-berlin.de
Abteilung: Epitaxy
Core research areas: III-V nanowires for optoelectronics
1 | Autor | T. Auzelle , C. Sinito , J. Lähnemann , G. Gao , T. Flissikowski , A. Trampert , O. Brandt , S. Fernández-Garrido |
Titel |
Interface recombination in Ga- and N-polar GaN/(Al,Ga)N quantum wells grown by molecular beam epitaxy |
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Source | Phys. Rev. Appl. , 17 , 4 ( 2022 ) | |
DOI : 10.1103/PhysRevApplied.17.044030 | arxiv: 2111.12969 | Cite : Bibtex RIS |
2 | Autor | T. Auzelle , M. Azadmand , T. Flissikowski , M. Ramsteiner , K. Morgenroth , C. Stemmler , S. Fernández-Garrido , S. Sanguinetti , H. T. Grahn , L. Geelhaar , O. Brandt |
Titel |
Enhanced radiative efficiency in GaN nanowires grown on sputtered TiNx |
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Source | ACS Photonics , 8 , 1718 ( 2021 ) | |
DOI : 10.1021/acsphotonics.1c00224 | arxiv: 2001.06387 | Cite : Bibtex RIS |
3 | Autor | T. Auzelle , F. Ullrich , S. Hietzschold , C. Sinito , S. Brackmann , W. Kowalsky , E. Mankel , O. Brandt , R. Lovrincic , S. Fernández-Garrido |
Titel |
External control of GaN band bending using phosphanate self-assembled monolayers |
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Source | ACS Appl. Mater. Interfaces , 13 , 4626 ( 2021 ) | |
DOI : 10.1021/acsami.0c17519 | arxiv: 2009.12089 | Cite : Bibtex RIS |
4 | Autor | L. Jaloustre , S. Le-Denmat , T. Auzelle , M. Azadmand , L. Geelhaar , F. Dahlem , R. Songmuang |
Titel |
Toward Quantitative Measurements of Piezoelectricity in III-N Semiconductor Nanowires |
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Source | ACS Appl. Nano Mater. , 4 , 43 ( 2021 ) | |
DOI : 10.1021/acsanm.0c02078 | arxiv: 1910.01187 | Cite : Bibtex RIS |
5 | Autor | Y. Zhao , Z. Xing , L. Geelhaar , J. Zhang , W. Yang , T. Auzelle , Y. Wu , L. Bian , S. Lu |
Titel |
Detaching highly flexible and transparent (In,Ga)N nanowire films by a low-cost and stable electrochemical procedure |
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Source | ACS Appl. Nano Mater. , 3 , 9943 ( 2020 ) | |
DOI : 10.1021/acsanm.0c01970 | Cite : Bibtex RIS |
6 | Autor | M. Azadmand , T. Auzelle , J. Lähnemann , G. Gao , L. Nicolai , M. Ramsteiner , A. Trampert , S. Sanguinetti , O. Brandt , L. Geelhaar |
Titel |
Self-assembly of well-separated AlN nanowires directly on sputtered metallic TiN films |
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Source | Phys. Status Solidi-Rapid Res. Lett. , 14 , 1900615 ( 2020 ) | |
DOI : 10.1002/pssr.201900615 | arxiv: 1910.07391 | Cite : Bibtex RIS |
7 | Autor | C. Sinito , P. Corfdir , C. Pfüller , G. Gao , J. Bartolomé , S. Kölling , A. Rodil Doblado , U. Jahn , J. Lähnemann , T. Auzelle , J. K. Zettler , T. Flissikowski , P. Koenraad , H. T. Grahn , L. Geelhaar , S. Fernández-Garrido , O. Brandt |
Titel |
Absence of quantum-confined Stark effect in GaN quantum disks embedded in (Al,Ga)N nanowires grown by molecular beam epitaxy |
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Source | Nano Lett. , 19 , 5938 ( 2019 ) | |
DOI : 10.1021/acs.nanolett.9b01521 | arxiv: 1905.04090 | Cite : Bibtex RIS |
8 | Autor | T. Auzelle , F. Ullrich , S. Hietzschold , S. Brackmann , S. Hillebrandt , W. Kowalsky , E. Mankel , R. Lovrincic , S. Fernández-Garrido |
Titel |
Electronic Properties of air-exposed GaN(11-00) and (0001) surfaces after several device processing compatible cleaning steps |
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Source | Appl. Surf. Sci. , 495 , 143514 ( 2019 ) | |
DOI : 10.1016/j.apsusc.2019.07.256 | Cite : Bibtex RIS |
9 | Autor | S. Fernández-Garrido , T. Auzelle , J. Lähnemann , K. Wimmer , A. Tahraoui , O. Brandt |
Titel |
Top-down fabrication of ordered arrays of GaN nanowires by selective area sublimation |
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Source | Nanoscale Adv. , 1 , 1893 ( 2019 ) | |
DOI : 10.1039/c8na00369f | arxiv: 1905.04948 | Cite : Bibtex RIS |
10 | Autor | G. Calabrese , G. Gao , D. van Treeck , P. Corfdir , C. Sinito , T. Auzelle , A. Trampert , L. Geelhaar , O. Brandt , S. Fernández-Garrido |
Titel |
Interfacial reactions during the molecular beam epitaxy of GaN nanowires on Ti/Al2O3 |
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Source | Nanotechnology , 30 , 114001 ( 2019 ) | |
DOI : 10.1088/1361-6528/aaf9c5 | Cite : Bibtex RIS |