Dr. Thomas Auzelle

Tuning the orientation of the top-facets of GaN nanowires in molecular beam epitaxy by thermal decomposition

@article{ author = { T. Auzelle and G. Calabrese and S. Fernández-Garrido }, title = { Tuning the orientation of the top-facets of GaN nanowires in molecular beam epitaxy by thermal decomposition }, journal = { Physical Review Materials }, volume = { 3 }, year = { 2019 }, pages = { 013402 } }

TY - JOUR AU - T. Auzelle AU - G. Calabrese AU - S. Fernández-Garrido TI - Tuning the orientation of the top-facets of GaN nanowires in molecular beam epitaxy by thermal decomposition JF - Physical Review Materials JA - Phys. Rev. Mater. J1 - VL - 3 SP - 013402 PY - 2019/01/09

Monitoring the formation of GaN nanowires in molecular beam epitaxy by polarization-resolved optical reflectometry

@article{ author = { P. Corfdir and G. Calabrese and A. Laha and T. Auzelle and L. Geelhaar and O. Brandt and S. Fernández-Garrido }, title = { Monitoring the formation of GaN nanowires in molecular beam epitaxy by polarization-resolved optical reflectometry }, journal = { CrystEngComm }, volume = { 20 }, year = { 2018 }, pages = { 3202 } }

TY - JOUR AU - P. Corfdir AU - G. Calabrese AU - A. Laha AU - T. Auzelle AU - L. Geelhaar AU - O. Brandt AU - S. Fernández-Garrido TI - Monitoring the formation of GaN nanowires in molecular beam epitaxy by polarization-resolved optical reflectometry JF - CrystEngComm JA - CrystEngComm J1 - ISSN 1466-8033 VL - 20 SP - 3202 PY - 2018/05/18