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Unsere Angebote für Öffentlichkeit und Presse

Georg Hoffmann (D)

PhD Student

Telefon: +49 30 20377 268

Raum: 0705

Email: hoffmann@pdi-berlin.de

Abteilung: Epitaxy

Core research areas: Nanofabrication

1	Autor	G. Hoffmann , M. Budde , P. Mazzolini , O. Bierwagen
	Titel	Efficient suboxide sources in oxide molecular beam epitaxy using mixed metal + oxide charges: The examples of SnO and Ga2O
	Source	APL Mat. , 8 , 031110 ( 2020 )
DOI : 10.1063/1.5134444 \| Download: PDF \| 3152 Cite : Bibtex RIS @article{ author = { G. Hoffmann and M. Budde and P. Mazzolini and O. Bierwagen }, title = { Efficient suboxide sources in oxide molecular beam epitaxy using mixed metal + oxide charges: The examples of SnO and Ga2O }, journal = { APL Materials }, volume = { 8 }, year = { 2020 }, pages = { 031110 } } G. Hoffmann, M. Budde, P. Mazzolini, and O. Bierwagen TY - JOUR AU - G. Hoffmann AU - M. Budde AU - P. Mazzolini AU - O. Bierwagen TI - Efficient suboxide sources in oxide molecular beam epitaxy using mixed metal + oxide charges: The examples of SnO and Ga2O JF - APL Materials JA - APL Mat. J1 - APLM VL - 8 SP - 031110 PY - 2020/03/12

2	Autor	G. Hoffmann , J. Herfort , M. Ramsteiner
	Titel	Spin generation in completely MBE grown Co2FeSi/MgO/GaAs lateral spin valves
	Source	Phys. Rev. Mater. , 3 , 074402 ( 2019 )
DOI : 10.1103/PhysRevMaterials.3.074402 \| arxiv: 1906.08661 \| 3076 Cite : Bibtex RIS @article{ author = { G. Hoffmann and J. Herfort and M. Ramsteiner }, title = { Spin generation in completely MBE grown Co2FeSi/MgO/GaAs lateral spin valves }, journal = { Physical Review Materials }, volume = { 3 }, year = { 2019 }, pages = { 074402 } } G. Hoffmann, J. Herfort, and M. Ramsteiner TY - JOUR AU - G. Hoffmann AU - J. Herfort AU - M. Ramsteiner TI - Spin generation in completely MBE grown Co2FeSi/MgO/GaAs lateral spin valves JF - Physical Review Materials JA - Phys. Rev. Mater. J1 - VL - 3 SP - 074402 PY - 2019/07/08

3	Autor	G. Hoffmann , B. Jenichen , J. Herfort
	Titel	Epitaxial growth of Co2FeSi/MgO/GaAs heterostructures using molecular beam epitaxy
	Source	J. Cryst. Growth , 512 , 194 ( 2019 )
DOI : 10.1016/j.jcrysgro.2019.02.029 \| 3079 Cite : Bibtex RIS @article{ author = { G. Hoffmann and B. Jenichen and J. Herfort }, title = { Epitaxial growth of Co2FeSi/MgO/GaAs heterostructures using molecular beam epitaxy }, journal = { Journal of Crystal Growth }, volume = { 512 }, year = { 2019 }, pages = { 194 } } G. Hoffmann, B. Jenichen, and J. Herfort TY - JOUR AU - G. Hoffmann AU - B. Jenichen AU - J. Herfort TI - Epitaxial growth of Co2FeSi/MgO/GaAs heterostructures using molecular beam epitaxy JF - Journal of Crystal Growth JA - J. Cryst. Growth J1 - JGC VL - 512 SP - 194 PY - 2019/02/15

Neuigkeiten

Forschungshighlights

Aktuelle Publikationen

Magnetic characteristics of epitaxial NiO films studied by Raman spectroscopy

Oxygen intercalated graphene on SiC(0001): Multiphase SiOx layer formation and its influence on graphene electronic properties

Radius-Dependent Homogeneous Strain in Uncoalesced GaN Nanowires