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Unsere Angebote für Öffentlichkeit und Presse

Georg Hoffmann (D)

PhD Student

Telefon: +49 30 20377 268

Raum: 0705

Email: hoffmann@pdi-berlin.de

Abteilung: Epitaxy

Core research areas: Nanofabrication

1	Autor	G. Hoffmann , J. Herfort , M. Ramsteiner
	Titel	Spin generation in completely MBE grown Co2FeSi/MgO/GaAs lateral spin valves
	Source	Phys. Rev. Mater. , 3 , 074402 ( 2019 )
DOI : 10.1103/PhysRevMaterials.3.074402 \| arxiv: 1906.08661 \| 3076 Cite : Bibtex RIS @article{ author = { G. Hoffmann and J. Herfort and M. Ramsteiner }, title = { Spin generation in completely MBE grown Co2FeSi/MgO/GaAs lateral spin valves }, journal = { Physical Review Materials }, volume = { 3 }, year = { 2019 }, pages = { 074402 } } G. Hoffmann, J. Herfort, and M. Ramsteiner TY - JOUR AU - G. Hoffmann AU - J. Herfort AU - M. Ramsteiner TI - Spin generation in completely MBE grown Co2FeSi/MgO/GaAs lateral spin valves JF - Physical Review Materials JA - Phys. Rev. Mater. J1 - 2475-9953 VL - 3 SP - 074402 PY - 2019/07/08

2	Autor	G. Hoffmann , B. Jenichen , J. Herfort
	Titel	Epitaxial growth of Co2FeSi/MgO/GaAs heterostructures using molecular beam epitaxy
	Source	J. Cryst. Growth , 512 , 194 ( 2019 )
DOI : 10.1016/j.jcrysgro.2019.02.029 \| 3079 Cite : Bibtex RIS @article{ author = { G. Hoffmann and B. Jenichen and J. Herfort }, title = { Epitaxial growth of Co2FeSi/MgO/GaAs heterostructures using molecular beam epitaxy }, journal = { Journal of Crystal Growth }, volume = { 512 }, year = { 2019 }, pages = { 194 } } G. Hoffmann, B. Jenichen, and J. Herfort TY - JOUR AU - G. Hoffmann AU - B. Jenichen AU - J. Herfort TI - Epitaxial growth of Co2FeSi/MgO/GaAs heterostructures using molecular beam epitaxy JF - Journal of Crystal Growth JA - J. Cryst. Growth J1 - JGC VL - 512 SP - 194 PY - 2019/02/15

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Aktuelle Publikationen

Frequency and power stabilization of a terahertz quantum-cascade laser using near-infrared optical excitation

Signatures of free carriers in Raman spectra of cubic In2O3

Predictive model for the temporal evolution of the shape of GaAs nanowires