Dr. Manfred Ramsteiner

Electrical spin injection from ferromagnetic MnAs metal layers into GaAs

@article{ author = { M. Ramsteiner and H. Y. Hao and A. Kawarahazuka and H. J. Zhu and M. Kästner and R. Hey and L. Däweritz and H.T. Grahn and K. H. Ploog }, title = { Electrical spin injection from ferromagnetic MnAs metal layers into GaAs }, journal = { Physical Review B: Solid State }, volume = { 66 }, year = { 2002 }, pages = { 081304(R) } }

TY - JOUR AU - M. Ramsteiner AU - H. Y. Hao AU - A. Kawarahazuka AU - H. J. Zhu AU - M. Kästner AU - R. Hey AU - L. Däweritz AU - H.T. Grahn AU - K. H. Ploog TI - Electrical spin injection from ferromagnetic MnAs metal layers into GaAs JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 66 SP - 081304(R) PY - 2002/01/01

Electrical spin injection from ferromagnetic metals into GaAs

@article{ author = { M. Ramsteiner and H. J. Zhu and A. Kawarahazuka and H.-Y. Hao and K. H. Ploog }, title = { Electrical spin injection from ferromagnetic metals into GaAs }, journal = { Advances in Solid State Physics }, volume = { 42 }, year = { 2002 }, pages = { 95 } }

TY - JOUR AU - M. Ramsteiner AU - H. J. Zhu AU - A. Kawarahazuka AU - H.-Y. Hao AU - K. H. Ploog TI - Electrical spin injection from ferromagnetic metals into GaAs JF - Advances in Solid State Physics JA - Adv. Solid State Phys. J1 - ASSP VL - 42 SP - 95 PY - 2002/01/01

Suppression of the photoluminescence quenching due to surface acoustic waves in high magnetic fields

@article{ author = { Y. Takagaki and E. Wiebicke and H.-J. Zhu and R. Hey and M. Ramsteiner and K. H. Ploog }, title = { Suppression of the photoluminescence quenching due to surface acoustic waves in high magnetic fields }, journal = { Semiconductor Science and Technology }, volume = { 17 }, year = { 2002 }, pages = { 161 } }

TY - JOUR AU - Y. Takagaki AU - E. Wiebicke AU - H.-J. Zhu AU - R. Hey AU - M. Ramsteiner AU - K. H. Ploog TI - Suppression of the photoluminescence quenching due to surface acoustic waves in high magnetic fields JF - Semiconductor Science and Technology JA - Semicond. Sci. Technol. J1 - SST VL - 17 SP - 161 PY - 2002/01/01

Photoluminescence of GaAs under surface acoustic wave propagation in high magnetic fields

@article{ author = { Y. Takagaki and E. Wiebicke and H. J. Zhu and R. Hey and M. Ramsteiner and K. H. Ploog }, title = { Photoluminescence of GaAs under surface acoustic wave propagation in high magnetic fields }, journal = { Microelectronic Engineering }, volume = { 63 }, year = { 2002 }, pages = { 205 } }

TY - JOUR AU - Y. Takagaki AU - E. Wiebicke AU - H. J. Zhu AU - R. Hey AU - M. Ramsteiner AU - K. H. Ploog TI - Photoluminescence of GaAs under surface acoustic wave propagation in high magnetic fields JF - Microelectronic Engineering JA - Microelectron. Eng. J1 - MiEn VL - 63 SP - 205 PY - 2002/01/01

Tunneling-induced spin injection in Fe/GaAs and MnAs/GaAs heterostructures

@article{ author = { K. H. Ploog and M. Ramsteiner and H.-P. Schönherr and H. J. Zhu }, title = { Tunneling-induced spin injection in Fe/GaAs and MnAs/GaAs heterostructures }, journal = { Proceedings of the 28th International Symposium on Compound Semiconductors; edited by Y. Arakawa, Y. Hirayama, K. Kishino, and H. Yamaguchi, IOP Conf. Ser. }, volume = { 170 }, year = { 2002 }, pages = { 261 } }

TY - JOUR AU - K. H. Ploog AU - M. Ramsteiner AU - H.-P. Schönherr AU - H. J. Zhu TI - Tunneling-induced spin injection in Fe/GaAs and MnAs/GaAs heterostructures JF - Proceedings of the 28th International Symposium on Compound Semiconductors; edited by Y. Arakawa, Y. Hirayama, K. Kishino, and H. Yamaguchi, IOP Conf. Ser. JA - Proc. ISCS 28 J1 - VL - 170 SP - 261 PY - 2002/01/01

Electronic structure of Mn ions in (Ga,Mn)As diluted magnetic semiconductor

@article{ author = { V. F. Sapega and M. Moreno and M. Ramsteiner and L. Däweritz and K. H. Ploog }, title = { Electronic structure of Mn ions in (Ga,Mn)As diluted magnetic semiconductor }, journal = { Physical Review B: Solid State }, volume = { 66 }, year = { 2002 }, pages = { 075217 } }

TY - JOUR AU - V. F. Sapega AU - M. Moreno AU - M. Ramsteiner AU - L. Däweritz AU - K. H. Ploog TI - Electronic structure of Mn ions in (Ga,Mn)As diluted magnetic semiconductor JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 66 SP - 075217 PY - 2002/01/01

Shape-mediated anisotropic strain in self-assembled InP/In_0.48Ga_0.52P quantum dots

@article{ author = { M. Schmidbauer and F. Hatami and M. Hanke and P. Schäfer and K. Braune and W. T. Masselink and R. Köhler and M. Ramsteiner }, title = { Shape-mediated anisotropic strain in self-assembled InP/In_0.48Ga_0.52P quantum dots }, journal = { Physical Review B: Solid State }, volume = { 65 }, year = { 2002 }, pages = { 125320 } }

TY - JOUR AU - M. Schmidbauer AU - F. Hatami AU - M. Hanke AU - P. Schäfer AU - K. Braune AU - W. T. Masselink AU - R. Köhler AU - M. Ramsteiner TI - Shape-mediated anisotropic strain in self-assembled InP/In_0.48Ga_0.52P quantum dots JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 65 SP - 125320 PY - 2002/01/01

Pulsed laser crystallization of SiGe alloys on GaAs

@article{ author = { F. Dondeo and P. V. Santos and M. Ramsteiner and D. Comedi and M. A. A. Pudenzi and I. Chambouleyron }, title = { Pulsed laser crystallization of SiGe alloys on GaAs }, journal = { Brazilian Journal of Physics }, volume = { 32 }, year = { 2002 }, pages = { 376 } }

TY - JOUR AU - F. Dondeo AU - P. V. Santos AU - M. Ramsteiner AU - D. Comedi AU - M. A. A. Pudenzi AU - I. Chambouleyron TI - Pulsed laser crystallization of SiGe alloys on GaAs JF - Brazilian Journal of Physics JA - Braz. J. Phys. J1 - BJP VL - 32 SP - 376 PY - 2002/01/01

Optical properties of M-plane GaN epilayers and GaN/(Al,Ga)N multiple quantum wells grown on γ-LiAlO₂(100)

@article{ author = { O. Brandt and P. Waltereit and S. Ghosh and A. Trampert and M. Ramsteiner and H.T. Grahn and K. H. Ploog }, title = { Optical properties of M-plane GaN epilayers and GaN/(Al,Ga)N multiple quantum wells grown on <span class="math"><em>γ</em></span>-LiAlO₂(100) }, journal = { Proceedings of the 11th International Workshop on the Physics of Semiconductor Devices; edited by V. Kumar and P. K. Basu (Allied Publishers Ltd., New Delhi, 2001) }, volume = { }, year = { 2001 }, pages = { 943 } }

TY - JOUR AU - O. Brandt AU - P. Waltereit AU - S. Ghosh AU - A. Trampert AU - M. Ramsteiner AU - H.T. Grahn AU - K. H. Ploog TI - Optical properties of M-plane GaN epilayers and GaN/(Al,Ga)N multiple quantum wells grown on <span class="math"><em>γ</em></span>-LiAlO₂(100) JF - Proceedings of the 11th International Workshop on the Physics of Semiconductor Devices; edited by V. Kumar and P. K. Basu (Allied Publishers Ltd., New Delhi, 2001) JA - Proc. IWPSD 11 J1 - - VL - SP - 943 PY - 2001/01/01

Influence of heteroepitaxy on the width and frequency of the E₂ (high)-phonon line in GaN studied by Raman spectroscopy

@article{ author = { M. Giehler and M. Ramsteiner and P. Waltereit and O. Brandt and K. H. Ploog and H. Obloh }, title = { Influence of heteroepitaxy on the width and frequency of the E₂ (high)-phonon line in GaN studied by Raman spectroscopy }, journal = { Journal of Applied Physics }, volume = { 89 }, year = { 2001 }, pages = { 3634 } }

TY - JOUR AU - M. Giehler AU - M. Ramsteiner AU - P. Waltereit AU - O. Brandt AU - K. H. Ploog AU - H. Obloh TI - Influence of heteroepitaxy on the width and frequency of the E₂ (high)-phonon line in GaN studied by Raman spectroscopy JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 89 SP - 3634 PY - 2001/01/01