Dr. Manfred Ramsteiner

Uniform quantum wire and quantum dot arrays by natural self-faceting on patterned substrates

@article{ author = { R. Nötzel and J. Fricke and Z. Niu and U. Jahn and K.-J. Friedland and M. Ramsteiner and H.-P. Schönherr and A. Trampert and K. H. Ploog }, title = { Uniform quantum wire and quantum dot arrays by natural self-faceting on patterned substrates }, journal = { Epitaxial Growth; edited by T. P. Pearsall, A.-L. Barabasi, F. Liu, and G. N. Maracas, Mater. Res. Soc. Proc. Vol. 570 (MRS, Pittsburgh, 1999) }, volume = { }, year = { 1999 }, pages = { 105 } }

TY - JOUR AU - R. Nötzel AU - J. Fricke AU - Z. Niu AU - U. Jahn AU - K.-J. Friedland AU - M. Ramsteiner AU - H.-P. Schönherr AU - A. Trampert AU - K. H. Ploog TI - Uniform quantum wire and quantum dot arrays by natural self-faceting on patterned substrates JF - Epitaxial Growth; edited by T. P. Pearsall, A.-L. Barabasi, F. Liu, and G. N. Maracas, Mater. Res. Soc. Proc. Vol. 570 (MRS, Pittsburgh, 1999) JA - Proc. MRS 570 J1 - VL - SP - 105 PY - 1999/01/01

Spatially resolved photoluminescence in quantum wells with surface acoustic waves

@article{ author = { P. V. Santos and M. Ramsteiner and R. Hey }, title = { Spatially resolved photoluminescence in quantum wells with surface acoustic waves }, journal = { Physica Status Solidi B }, volume = { 215 }, year = { 1999 }, pages = { 253 } }

TY - JOUR AU - P. V. Santos AU - M. Ramsteiner AU - R. Hey TI - Spatially resolved photoluminescence in quantum wells with surface acoustic waves JF - Physica Status Solidi B JA - Phys. Status Solidi B J1 - PSSB VL - 215 SP - 253 PY - 1999/01/01

Photoluminescence in GaAs-based quantum well structures with surface acoustic waves

@article{ author = { P. V. Santos and M. Ramsteiner and F. Jungnickel and R. Hey }, title = { Photoluminescence in GaAs-based quantum well structures with surface acoustic waves }, journal = { Physica Status Solidi A }, volume = { 173 }, year = { 1999 }, pages = { 269 } }

TY - JOUR AU - P. V. Santos AU - M. Ramsteiner AU - F. Jungnickel AU - R. Hey TI - Photoluminescence in GaAs-based quantum well structures with surface acoustic waves JF - Physica Status Solidi A JA - Phys. Status Solidi A J1 - PSSA VL - 173 SP - 269 PY - 1999/01/01

Influence of AlN nucleation layers on growth mode and strain relief of GaN grown on 6H-SiC(0001)

@article{ author = { P. Waltereit and O. Brandt and A. Trampert and M. Ramsteiner and M. Reiche and M. Qi and K. H. Ploog }, title = { Influence of AlN nucleation layers on growth mode and strain relief of GaN grown on 6H-SiC(0001) }, journal = { Applied Physics Letters }, volume = { 74 }, year = { 1999 }, pages = { 3660 } }

TY - JOUR AU - P. Waltereit AU - O. Brandt AU - A. Trampert AU - M. Ramsteiner AU - M. Reiche AU - M. Qi AU - K. H. Ploog TI - Influence of AlN nucleation layers on growth mode and strain relief of GaN grown on 6H-SiC(0001) JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 74 SP - 3660 PY - 1999/01/01

Influence of the growth conditions for GaAs quantum wells and composition fluctuations in Al(Ga)As barriers on exciton and electron localization

@article{ author = { R. Hey and M. Ramsteiner and M. Wassermeier and K.-J. Friedland and B. Jenichen and L. Däweritz and K. H. Ploog }, title = { Influence of the growth conditions for GaAs quantum wells and composition fluctuations in Al(Ga)As barriers on exciton and electron localization }, journal = { Physica E: Low-dimensional Systems and Nanostructures }, volume = { 2 }, year = { 1998 }, pages = { 867 } }

TY - JOUR AU - R. Hey AU - M. Ramsteiner AU - M. Wassermeier AU - K.-J. Friedland AU - B. Jenichen AU - L. Däweritz AU - K. H. Ploog TI - Influence of the growth conditions for GaAs quantum wells and composition fluctuations in Al(Ga)As barriers on exciton and electron localization JF - Physica E: Low-dimensional Systems and Nanostructures JA - Physica E (Amsterdam) J1 - PhE VL - 2 SP - 867 PY - 1998/01/01

Electronic and vibrational Raman scattering in resonance with yellow luminescence transitions in GaN on sapphire substrate

@article{ author = { D.-S. Jiang and M. Ramsteiner and O. Brandt and K. H. Ploog and H. Tews and A. Graber and R. Averbeck and H. Riechert }, title = { Electronic and vibrational Raman scattering in resonance with yellow luminescence transitions in GaN on sapphire substrate }, journal = { Proceedings of the IEEE 24th International Symposium on Compound Semiconductors; edited by M. Melloch and M. A. Reed, IOP Conf. Ser. }, volume = { 156 }, year = { 1998 }, pages = { 211 } }

TY - JOUR AU - D.-S. Jiang AU - M. Ramsteiner AU - O. Brandt AU - K. H. Ploog AU - H. Tews AU - A. Graber AU - R. Averbeck AU - H. Riechert TI - Electronic and vibrational Raman scattering in resonance with yellow luminescence transitions in GaN on sapphire substrate JF - Proceedings of the IEEE 24th International Symposium on Compound Semiconductors; edited by M. Melloch and M. A. Reed, IOP Conf. Ser. JA - Proc. ISCS 24 J1 - - VL - 156 SP - 211 PY - 1998/01/01

Defect-induced Raman scattering in resonance with yellow luminescence transitions in hexagonal GaN on a sapphire substrate

@article{ author = { D. S. Jiang and M. Ramsteiner and K. H. Ploog and H. Tews and A. Graber and R. Averbeck and H. Riechert }, title = { Defect-induced Raman scattering in resonance with yellow luminescence transitions in hexagonal GaN on a sapphire substrate }, journal = { Applied Physics Letters }, volume = { 72 }, year = { 1998 }, pages = { 365 } }

TY - JOUR AU - D. S. Jiang AU - M. Ramsteiner AU - K. H. Ploog AU - H. Tews AU - A. Graber AU - R. Averbeck AU - H. Riechert TI - Defect-induced Raman scattering in resonance with yellow luminescence transitions in hexagonal GaN on a sapphire substrate JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 72 SP - 365 PY - 1998/01/01

Raman scattering and photoluminescence properties of MBE-grown GaN on sapphire

@article{ author = { D.-S. Jiang and M. Ramsteiner and K. Ploog and H. Tews and A. Graber and H. Riechert }, title = { Raman scattering and photoluminescence properties of MBE-grown GaN on sapphire }, journal = { Radiation Effects and Defects in Solids }, volume = { 146 }, year = { 1998 }, pages = { 99 } }

TY - JOUR AU - D.-S. Jiang AU - M. Ramsteiner AU - K. Ploog AU - H. Tews AU - A. Graber AU - H. Riechert TI - Raman scattering and photoluminescence properties of MBE-grown GaN on sapphire JF - Radiation Effects and Defects in Solids JA - Radiat. Eff. Defect Solids J1 - REDS VL - 146 SP - 99 PY - 1998/01/01

Mapping of the local confinement potential in semiconductor nanostructures by near-field optical spectroscopy

@article{ author = { C. Lienau and A. Richter and G. Behme and M. Süptitz and T. Elsaesser and M. Ramsteiner and R. Nötzel and K. H. Ploog }, title = { Mapping of the local confinement potential in semiconductor nanostructures by near-field optical spectroscopy }, journal = { Physica Status Solidi B }, volume = { 206 }, year = { 1998 }, pages = { 153 } }

TY - JOUR AU - C. Lienau AU - A. Richter AU - G. Behme AU - M. Süptitz AU - T. Elsaesser AU - M. Ramsteiner AU - R. Nötzel AU - K. H. Ploog TI - Mapping of the local confinement potential in semiconductor nanostructures by near-field optical spectroscopy JF - Physica Status Solidi B JA - Phys. Status Solidi B J1 - PSSB VL - 206 SP - 153 PY - 1998/01/01

Nanoscale mapping of confinement potentials in single semiconductor quantum wires by near-field optical spectroscopy

@article{ author = { C. Lienau and A. Richter and G. Behme and M. Süptitz and D. Heinrich and T. Elsaesser and M. Ramsteiner and R. Nötzel and K. H. Ploog }, title = { Nanoscale mapping of confinement potentials in single semiconductor quantum wires by near-field optical spectroscopy }, journal = { Physical Review B: Solid State }, volume = { 58 }, year = { 1998 }, pages = { 2045 } }

TY - JOUR AU - C. Lienau AU - A. Richter AU - G. Behme AU - M. Süptitz AU - D. Heinrich AU - T. Elsaesser AU - M. Ramsteiner AU - R. Nötzel AU - K. H. Ploog TI - Nanoscale mapping of confinement potentials in single semiconductor quantum wires by near-field optical spectroscopy JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 58 SP - 2045 PY - 1998/01/01