Selectivity of growth on patterned GaAs (311)A substrates

@article{ author = { R. Nötzel and J. Menniger and M. Ramsteiner and A. Ruiz and H.-P. Schönherr and K. H. Ploog }, title = { Selectivity of growth on patterned GaAs (311)A substrates }, journal = { Applied Physics Letters }, volume = { 68 }, year = { 1996 }, pages = { 1132 } }

TY - JOUR AU - R. Nötzel AU - J. Menniger AU - M. Ramsteiner AU - A. Ruiz AU - H.-P. Schönherr AU - K. H. Ploog TI - Selectivity of growth on patterned GaAs (311)A substrates JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 68 SP - 1132 PY - 1996/01/01

Micro-photoluminescence study at room temperature of sidewall quantum wires formed on patterned GaAs (311)A substrates by molecular beam epitaxy

@article{ author = { R. Nötzel and M. Ramsteiner and J. Menniger and A. Trampert and H.-P. Schönherr and L. Däweritz and K. H. Ploog }, title = { Micro-photoluminescence study at room temperature of sidewall quantum wires formed on patterned GaAs (311)A substrates by molecular beam epitaxy }, journal = { Japanese Journal of Applied Physics, Part 2 }, volume = { 35 }, year = { 1996 }, pages = { L297 } }

TY - JOUR AU - R. Nötzel AU - M. Ramsteiner AU - J. Menniger AU - A. Trampert AU - H.-P. Schönherr AU - L. Däweritz AU - K. H. Ploog TI - Micro-photoluminescence study at room temperature of sidewall quantum wires formed on patterned GaAs (311)A substrates by molecular beam epitaxy JF - Japanese Journal of Applied Physics, Part 2 JA - Jpn. J. Appl. Phys., Part 2 J1 - JJAP2 VL - 35 SP - L297 PY - 1996/01/01

Patterned growth on high-index GaAs (n11) substrates: application to sidewall quantum wires

@article{ author = { R. Nötzel and M. Ramsteiner and J. Menniger and A. Trampert and H.-P. Schönherr and L. Däweritz and K. H. Ploog }, title = { Patterned growth on high-index GaAs (n11) substrates: application to sidewall quantum wires }, journal = { Journal of Applied Physics }, volume = { 80 }, year = { 1996 }, pages = { 4108 } }

TY - JOUR AU - R. Nötzel AU - M. Ramsteiner AU - J. Menniger AU - A. Trampert AU - H.-P. Schönherr AU - L. Däweritz AU - K. H. Ploog TI - Patterned growth on high-index GaAs (n11) substrates: application to sidewall quantum wires JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 80 SP - 4108 PY - 1996/01/01

Photoluminescence enhancement induced by near surface Si doping wires in GaAs

@article{ author = { M. Ramsteiner and R. Klann and L. Däweritz and R. Hey and H. Kostial and G. Jungk }, title = { Photoluminescence enhancement induced by near surface Si doping wires in GaAs }, journal = { Solid-State Electronics }, volume = { 40 }, year = { 1996 }, pages = { 329 } }

TY - JOUR AU - M. Ramsteiner AU - R. Klann AU - L. Däweritz AU - R. Hey AU - H. Kostial AU - G. Jungk TI - Photoluminescence enhancement induced by near surface Si doping wires in GaAs JF - Solid-State Electronics JA - Solid-State Electron. J1 - SSE VL - 40 SP - 329 PY - 1996/01/01

Electronic Raman scattering from donors in GaN and the relationship to the yellow luminescence band

@article{ author = { M. Ramsteiner and J. Menniger and O. Brandt and H. Yang and K. H. Ploog }, title = { Electronic Raman scattering from donors in GaN and the relationship to the yellow luminescence band }, journal = { Proceedings of the 23rd International Conference on the Physics of Semiconductors; edited by M. Scheffler and R. Zimmermann (World Scientific, Singapore, 1996) }, volume = { }, year = { 1996 }, pages = { 2933 } }

TY - JOUR AU - M. Ramsteiner AU - J. Menniger AU - O. Brandt AU - H. Yang AU - K. H. Ploog TI - Electronic Raman scattering from donors in GaN and the relationship to the yellow luminescence band JF - Proceedings of the 23rd International Conference on the Physics of Semiconductors; edited by M. Scheffler and R. Zimmermann (World Scientific, Singapore, 1996) JA - Proc. ICPS 23 J1 - - VL - SP - 2933 PY - 1996/01/01

Shallow donors in GaN studied by electronic Raman scattering in resonance with yellow luminescence transitions

@article{ author = { M. Ramsteiner and J. Menniger and O. Brandt and H. Yang and K. H. Ploog }, title = { Shallow donors in GaN studied by electronic Raman scattering in resonance with yellow luminescence transitions }, journal = { Applied Physics Letters }, volume = { 69 }, year = { 1996 }, pages = { 1276 } }

TY - JOUR AU - M. Ramsteiner AU - J. Menniger AU - O. Brandt AU - H. Yang AU - K. H. Ploog TI - Shallow donors in GaN studied by electronic Raman scattering in resonance with yellow luminescence transitions JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 69 SP - 1276 PY - 1996/01/01

Ellipsometric investigations and luminescence properties of semiconductor microcavities

@article{ author = { G. Jungk and M. Ramsteiner and R. Hey }, title = { Ellipsometric investigations and luminescence properties of semiconductor microcavities }, journal = { Il Nuovo Cimento D }, volume = { 17 }, year = { 1995 }, pages = { 1519 } }

TY - JOUR AU - G. Jungk AU - M. Ramsteiner AU - R. Hey TI - Ellipsometric investigations and luminescence properties of semiconductor microcavities JF - Il Nuovo Cimento D JA - Nuovo Cimento D J1 - INCD VL - 17 SP - 1519 PY - 1995/01/01