Dr. Manfred Ramsteiner

Phonon anharmonicities and ultrafast dynamics in epitaxial Sb2Te3

@article{ author = { V. Bragaglia and M. Ramsteiner and J. D. Schick and E. Boschker and R. Mitzner and R. Calarco and K. Holldack }, title = { Phonon anharmonicities and ultrafast dynamics in epitaxial Sb2Te3 }, journal = { Scientific Reports }, volume = { 10 }, year = { 2020 }, pages = { 12962 } }

TY - JOUR AU - V. Bragaglia AU - M. Ramsteiner AU - J. D. Schick AU - E. Boschker AU - R. Mitzner AU - R. Calarco AU - K. Holldack TI - Phonon anharmonicities and ultrafast dynamics in epitaxial Sb2Te3 JF - Scientific Reports JA - Sci. Rep. J1 - SREP VL - 10 SP - 12962 PY - 2020/07/31

Magnetic characteristics of epitaxial NiO films studied by Raman spectroscopy

@article{ author = { J. Feldl and M. Budde and C. Tschammer and O. Bierwagen and M. Ramsteiner }, title = { Magnetic characteristics of epitaxial NiO films studied by Raman spectroscopy }, journal = { Journal of Applied Physics }, volume = { 127 }, year = { 2020 }, pages = { 235105 } }

TY - JOUR AU - J. Feldl AU - M. Budde AU - C. Tschammer AU - O. Bierwagen AU - M. Ramsteiner TI - Magnetic characteristics of epitaxial NiO films studied by Raman spectroscopy JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 127 SP - 235105 PY - 2020/06/17

Self-assembly of well-separated AlN nanowires directly on sputtered metallic TiN films

@article{ author = { M. Azadmand and T. Auzelle and J. Lähnemann and G. Gao and L. Nicolai and M. Ramsteiner and A. Trampert and S. Sanguinetti and O. Brandt and L. Geelhaar }, title = { Self-assembly of well-separated AlN nanowires directly on sputtered metallic TiN films }, journal = { Physica Status Solidi Rapid Research Letters }, volume = { 14 }, year = { 2020 }, pages = { 1900615 } }

TY - JOUR AU - M. Azadmand AU - T. Auzelle AU - J. Lähnemann AU - G. Gao AU - L. Nicolai AU - M. Ramsteiner AU - A. Trampert AU - S. Sanguinetti AU - O. Brandt AU - L. Geelhaar TI - Self-assembly of well-separated AlN nanowires directly on sputtered metallic TiN films JF - Physica Status Solidi Rapid Research Letters JA - Phys. Status Solidi RRL J1 - VL - 14 SP - 1900615 PY - 2020/03/01

Demonstration of n-type behavior in catalyst-free Si-doped GaAs nanowires grown by molecular beam epitaxy

@article{ author = { Daniel Ruhstorfer and Simon Mejia and M. Ramsteiner and Markus Döblinger and Hubert Riedl and Jonathan J. Finley and Gregor Koblmüller }, title = { Demonstration of n-type behavior in catalyst-free Si-doped GaAs nanowires grown by molecular beam epitaxy }, journal = { Applied Physics Letters }, volume = { 116 }, year = { 2020 }, pages = { 052101 } }

TY - JOUR AU - Daniel Ruhstorfer AU - Simon Mejia AU - M. Ramsteiner AU - Markus Döblinger AU - Hubert Riedl AU - Jonathan J. Finley AU - Gregor Koblmüller TI - Demonstration of n-type behavior in catalyst-free Si-doped GaAs nanowires grown by molecular beam epitaxy JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 116 SP - 052101 PY - 2020/02/04

Interfacial resistance switching characteristics in metal-chalcogenide junctions using Bi-Cu-Se, Bi-Ag-Se, and Sb-Cu-Te alloys

@article{ author = { Y. Takagaki and B. Jenichen and M. Ramsteiner and A. Trampert }, title = { Interfacial resistance switching characteristics in metal-chalcogenide junctions using Bi-Cu-Se, Bi-Ag-Se, and Sb-Cu-Te alloys }, journal = { journal of alloys and compounds }, volume = { 824 }, year = { 2020 }, pages = { 153880 } }

TY - JOUR AU - Y. Takagaki AU - B. Jenichen AU - M. Ramsteiner AU - A. Trampert TI - Interfacial resistance switching characteristics in metal-chalcogenide junctions using Bi-Cu-Se, Bi-Ag-Se, and Sb-Cu-Te alloys JF - journal of alloys and compounds JA - J. Alloy. Comp. J1 - VL - 824 SP - 153880 PY - 2020/01/24

Plasma-assisted molecular beam epitaxy of NiO on GaN(00.1)

@article{ author = { M. Budde and T. Remmele and C. Tschammer and J. Feldl and P. Franz and J. Lähnemann and Z. Cheng and M. Hanke and M. Ramsteiner and M. Albrecht and O. Bierwagen }, title = { Plasma-assisted molecular beam epitaxy of NiO on GaN(00.1) }, journal = { Journal of Applied Physics }, volume = { 127 }, year = { 2020 }, pages = { 015306 } }

TY - JOUR AU - M. Budde AU - T. Remmele AU - C. Tschammer AU - J. Feldl AU - P. Franz AU - J. Lähnemann AU - Z. Cheng AU - M. Hanke AU - M. Ramsteiner AU - M. Albrecht AU - O. Bierwagen TI - Plasma-assisted molecular beam epitaxy of NiO on GaN(00.1) JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 127 SP - 015306 PY - 2020/01/06

Signatures of free carriers in Raman spectra of cubic In2O3

@article{ author = { M. Ramsteiner and J. Feldl and Z. Galazka }, title = { Signatures of free carriers in Raman spectra of cubic In2O3 }, journal = { Semiconductor Science and Technology }, volume = { 35 }, year = { 2019 }, pages = { 015017 } }

TY - JOUR AU - M. Ramsteiner AU - J. Feldl AU - Z. Galazka TI - Signatures of free carriers in Raman spectra of cubic In2O3 JF - Semiconductor Science and Technology JA - SST J1 - VL - 35 SP - 015017 PY - 2019/12/02

Memristive resistive switch based on spontaneous barrier creation in a metal-chalcogenide junction

@article{ author = { Y. Takagaki and M. Ramsteiner and U. Jahn and B. Jenichen and A. Trampert }, title = { Memristive resistive switch based on spontaneous barrier creation in a metal-chalcogenide junction }, journal = { Journal of Physics D: Applied Physics }, volume = { 52 }, year = { 2019 }, pages = { 385101 } }

TY - JOUR AU - Y. Takagaki AU - M. Ramsteiner AU - U. Jahn AU - B. Jenichen AU - A. Trampert TI - Memristive resistive switch based on spontaneous barrier creation in a metal-chalcogenide junction JF - Journal of Physics D: Applied Physics JA - J. Phys. D J1 - JPD VL - 52 SP - 385101 PY - 2019/07/15

Spin generation in completely MBE grown Co2FeSi/MgO/GaAs lateral spin valves

@article{ author = { G. Hoffmann and J. Herfort and M. Ramsteiner }, title = { Spin generation in completely MBE grown Co2FeSi/MgO/GaAs lateral spin valves }, journal = { Physical Review Materials }, volume = { 3 }, year = { 2019 }, pages = { 074402 } }

TY - JOUR AU - G. Hoffmann AU - J. Herfort AU - M. Ramsteiner TI - Spin generation in completely MBE grown Co2FeSi/MgO/GaAs lateral spin valves JF - Physical Review Materials JA - Phys. Rev. Mater. J1 - VL - 3 SP - 074402 PY - 2019/07/08

Indium incorporation in homoepitaxial β-Ga2O3 thin films grown by metal organic vapor phase epitaxy

@article{ author = { S. Bin Anooz and A. Popp and R. Grüneberg and C. Wouters and M. Schmidbauer and M. Albrecht and A. Fiedler and M. Ramsteiner and D. Klimm and R. Schewski and K. Irmscher and Z. Galazka and G. Wagner }, title = { Indium incorporation in homoepitaxial β-Ga2O3 thin films grown by metal organic vapor phase epitaxy }, journal = { Journal of Applied Physics }, volume = { 125 }, year = { 2019 }, pages = { 195702 } }

TY - JOUR AU - S. Bin Anooz AU - A. Popp AU - R. Grüneberg AU - C. Wouters AU - M. Schmidbauer AU - M. Albrecht AU - A. Fiedler AU - M. Ramsteiner AU - D. Klimm AU - R. Schewski AU - K. Irmscher AU - Z. Galazka AU - G. Wagner TI - Indium incorporation in homoepitaxial β-Ga2O3 thin films grown by metal organic vapor phase epitaxy JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 125 SP - 195702 PY - 2019/05/20