Dr. Manfred Ramsteiner

Molecular beam epitaxy of single-crystalline bixbyite (In1-xGax)2O3 films (x≤0.18): Structural properties and consequences of compositional inhomogeneity

@article{ author = { A. Papadogianni and C. Wouters and R. Schewski and J. Feldl and J. Lähnemann and T. Nagata and M. Feneberg and E. Kluth and R. Goldhahn and M. Ramsteiner and M. Albrecht and O. Bierwagen }, title = { Molecular beam epitaxy of single-crystalline bixbyite (In1-xGax)2O3 films (x≤0.18): Structural properties and consequences of compositional inhomogeneity }, journal = { Physical Review Materials }, volume = { 6 }, year = { 2022 }, pages = { 033604 } }

TY - JOUR AU - A. Papadogianni AU - C. Wouters AU - R. Schewski AU - J. Feldl AU - J. Lähnemann AU - T. Nagata AU - M. Feneberg AU - E. Kluth AU - R. Goldhahn AU - M. Ramsteiner AU - M. Albrecht AU - O. Bierwagen TI - Molecular beam epitaxy of single-crystalline bixbyite (In1-xGax)2O3 films (x≤0.18): Structural properties and consequences of compositional inhomogeneity JF - Physical Review Materials JA - Phys. Rev. Mater. J1 - VL - 6 SP - 033604 PY - 2022/03/14

Resonant electronic Raman scattering from Ir4+ ions in beta-Ga2O3

@article{ author = { P. Seyidov and M. Ramsteiner and Z. Galazka and K. Irmscher }, title = { Resonant electronic Raman scattering from Ir4+ ions in beta-Ga2O3 }, journal = { Journal of Applied Physics }, volume = { 131 }, year = { 2022 }, pages = { 035707 } }

TY - JOUR AU - P. Seyidov AU - M. Ramsteiner AU - Z. Galazka AU - K. Irmscher TI - Resonant electronic Raman scattering from Ir4+ ions in beta-Ga2O3 JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 131 SP - 035707 PY - 2022/01/20

Surfactant-induced alterations of epitaxial orientation in $\beta$-In$_{2}$S$_{3}$ layers on InP

@article{ author = { Y. Takagaki and M. Hanke and M. Ramsteiner }, title = { Surfactant-induced alterations of epitaxial orientation in $\beta$-In$_{2}$S$_{3}$ layers on InP }, journal = { Crystal Growth & Design }, volume = { 21 }, year = { 2021 }, pages = { 6314 } }

TY - JOUR AU - Y. Takagaki AU - M. Hanke AU - M. Ramsteiner TI - Surfactant-induced alterations of epitaxial orientation in $\beta$-In$_{2}$S$_{3}$ layers on InP JF - Crystal Growth & Design JA - Cryst. Growth Des. J1 - VL - 21 SP - 6314 PY - 2021/11/03

Large-area van der Waals epitaxy and magnetic characterization of Fe 3 GeTe 2 films on graphene

@article{ author = { J. M. J. Lopes and D. Czubak and E. Zallo and A.I. Figueroa and C. Guillemard and M. Valvidares and J.R. Zuazo and J. López-Sanchéz and S.O. Valenzuela and M. Hanke and M. Ramsteiner }, title = { Large-area van der Waals epitaxy and magnetic characterization of Fe 3 GeTe 2 films on graphene }, journal = { 2D Materials }, volume = { 8 }, year = { 2021 }, pages = { 041001 } }

TY - JOUR AU - J. M. J. Lopes AU - D. Czubak AU - E. Zallo AU - A.I. Figueroa AU - C. Guillemard AU - M. Valvidares AU - J.R. Zuazo AU - J. López-Sanchéz AU - S.O. Valenzuela AU - M. Hanke AU - M. Ramsteiner TI - Large-area van der Waals epitaxy and magnetic characterization of Fe 3 GeTe 2 films on graphene JF - 2D Materials JA - 2D Mater. J1 - VL - 8 SP - 041001 PY - 2021/08/11

Band gap widening and phonon behavior of cubic single-crystalline (In,Ga)2O3 alloy films

@article{ author = { J. Feldl and M. Feneberg and A. Papadogianni and J. Lähnemann and T. Nagata and O. Bierwagen and R. Goldhahn and M. Ramsteiner }, title = { Band gap widening and phonon behavior of cubic single-crystalline (In,Ga)2O3 alloy films }, journal = { Applied Physics Letters }, volume = { 119 }, year = { 2021 }, pages = { 042101 } }

TY - JOUR AU - J. Feldl AU - M. Feneberg AU - A. Papadogianni AU - J. Lähnemann AU - T. Nagata AU - O. Bierwagen AU - R. Goldhahn AU - M. Ramsteiner TI - Band gap widening and phonon behavior of cubic single-crystalline (In,Ga)2O3 alloy films JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 119 SP - 042101 PY - 2021/07/29

Enhanced radiative efficiency in GaN nanowires grown on sputtered TiNx

@article{ author = { T. Auzelle and M. Azadmand and T. Flissikowski and M. Ramsteiner and K. Morgenroth and C. Stemmler and S. Fernández-Garrido and S. Sanguinetti and H. T. Grahn and L. Geelhaar and O. Brandt }, title = { Enhanced radiative efficiency in GaN nanowires grown on sputtered TiNx }, journal = { ACS Photonics }, volume = { 8 }, year = { 2021 }, pages = { 1718 } }

TY - JOUR AU - T. Auzelle AU - M. Azadmand AU - T. Flissikowski AU - M. Ramsteiner AU - K. Morgenroth AU - C. Stemmler AU - S. Fernández-Garrido AU - S. Sanguinetti AU - H. T. Grahn AU - L. Geelhaar AU - O. Brandt TI - Enhanced radiative efficiency in GaN nanowires grown on sputtered TiNx JF - ACS Photonics JA - ACS Photonics J1 - VL - 8 SP - 1718 PY - 2021/05/12

Exchange-Striction Driven Ultrafast Nonthermal Lattice Dynamics in NiO

@article{ author = { Y. W. Windsor and D. Zahn and R. Kamrla and J. Feldl and H. Seiler and C.-T. Chiang and M. Ramsteiner and W. Widdra and R. Ernstorfer and L. Rettig }, title = { Exchange-Striction Driven Ultrafast Nonthermal Lattice Dynamics in NiO }, journal = { Physical Review Letters }, volume = { 126 }, year = { 2021 }, pages = { 147202 } }

TY - JOUR AU - Y. W. Windsor AU - D. Zahn AU - R. Kamrla AU - J. Feldl AU - H. Seiler AU - C.-T. Chiang AU - M. Ramsteiner AU - W. Widdra AU - R. Ernstorfer AU - L. Rettig TI - Exchange-Striction Driven Ultrafast Nonthermal Lattice Dynamics in NiO JF - Physical Review Letters JA - Phys. Rev. Lett. J1 - PRL VL - 126 SP - 147202 PY - 2021/04/08

Dependence of interfacial resistance switching on transition metal constituent M = Cu, Ag, and Ni for chalcogenides Bi-M-S

@article{ author = { Y. Takagaki and B. Jenichen and M. Ramsteiner and J. Herfort }, title = { Dependence of interfacial resistance switching on transition metal constituent M = Cu, Ag, and Ni for chalcogenides Bi-M-S }, journal = { Journal of Alloys and Compounds }, volume = { 858 }, year = { 2021 }, pages = { 157709 } }

TY - JOUR AU - Y. Takagaki AU - B. Jenichen AU - M. Ramsteiner AU - J. Herfort TI - Dependence of interfacial resistance switching on transition metal constituent M = Cu, Ag, and Ni for chalcogenides Bi-M-S JF - Journal of Alloys and Compounds JA - J. Alloy. Comp. J1 - VL - 858 SP - 157709 PY - 2021/01/28

SnO/beta-Ga2O3 vertical pn heterojunction diodes

@article{ author = { M. Budde and D. Splith and P. Mazzolini and A. Tahraoui and J. Feldl and M. Ramsteiner and H. von Wenckstern and M. Grundmann and O. Bierwagen }, title = { SnO/beta-Ga2O3 vertical pn heterojunction diodes }, journal = { Applied Physics Letters }, volume = { 117 }, year = { 2020 }, pages = { 252106 } }

TY - JOUR AU - M. Budde AU - D. Splith AU - P. Mazzolini AU - A. Tahraoui AU - J. Feldl AU - M. Ramsteiner AU - H. von Wenckstern AU - M. Grundmann AU - O. Bierwagen TI - SnO/beta-Ga2O3 vertical pn heterojunction diodes JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 117 SP - 252106 PY - 2020/12/22

Plasma-assisted molecular beam epitaxy of SnO(001) films: Metastability, hole transport properties, Seebeck coefficient, and effective hole mass

@article{ author = { M. Budde and P. Mazzolini and J. Feldl and C. Golz and T. Nagata and S. Ueda and G. Hoffmann and F. Hatami and W. T. Masselink and M. Ramsteiner and O. Bierwagen }, title = { Plasma-assisted molecular beam epitaxy of SnO(001) films: Metastability, hole transport properties, Seebeck coefficient, and effective hole mass }, journal = { Physical Review Materials }, volume = { 4 }, year = { 2020 }, pages = { 124602 } }

TY - JOUR AU - M. Budde AU - P. Mazzolini AU - J. Feldl AU - C. Golz AU - T. Nagata AU - S. Ueda AU - G. Hoffmann AU - F. Hatami AU - W. T. Masselink AU - M. Ramsteiner AU - O. Bierwagen TI - Plasma-assisted molecular beam epitaxy of SnO(001) films: Metastability, hole transport properties, Seebeck coefficient, and effective hole mass JF - Physical Review Materials JA - Phys. Rev. Mater. J1 - VL - 4 SP - 124602 PY - 2020/12/16