Large-area van der Waals epitaxy and magnetic characterization of Fe 3 GeTe 2 films on graphene

@article{ author = { J. M. J. Lopes and D. Czubak and E. Zallo and A.I. Figueroa and C. Guillemard and M. Valvidares and J.R. Zuazo and J. López-Sanchéz and S.O. Valenzuela and M. Hanke and M. Ramsteiner }, title = { Large-area van der Waals epitaxy and magnetic characterization of Fe 3 GeTe 2 films on graphene }, journal = { 2D Materials }, volume = { 8 }, year = { 2021 }, pages = { 041001 } }

TY - JOUR AU - J. M. J. Lopes AU - D. Czubak AU - E. Zallo AU - A.I. Figueroa AU - C. Guillemard AU - M. Valvidares AU - J.R. Zuazo AU - J. López-Sanchéz AU - S.O. Valenzuela AU - M. Hanke AU - M. Ramsteiner TI - Large-area van der Waals epitaxy and magnetic characterization of Fe 3 GeTe 2 films on graphene JF - 2D Materials JA - 2D Mater. J1 - VL - 8 SP - 041001 PY - 2021/08/11

Band gap widening and phonon behavior of cubic single-crystalline (In,Ga)2O3 alloy films

@article{ author = { J. Feldl and Martin Feneberg and A. Papadogianni and J. Lähnemann and Takahiro Nagata and O. Bierwagen and Rüdiger Goldhahn and M. Ramsteiner }, title = { Band gap widening and phonon behavior of cubic single-crystalline (In,Ga)2O3 alloy films }, journal = { Applied Physics Letters }, volume = { 119 }, year = { 2021 }, pages = { 042101 } }

TY - JOUR AU - J. Feldl AU - Martin Feneberg AU - A. Papadogianni AU - J. Lähnemann AU - Takahiro Nagata AU - O. Bierwagen AU - Rüdiger Goldhahn AU - M. Ramsteiner TI - Band gap widening and phonon behavior of cubic single-crystalline (In,Ga)2O3 alloy films JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 119 SP - 042101 PY - 2021/07/29

Enhanced radiative efficiency in GaN nanowires grown on sputtered TiNx

@article{ author = { T. Auzelle and M. Azadmand and T. Flissikowski and M. Ramsteiner and K. Morgenroth and C. Stemmler and S. Fernández-Garrido and S. Sanguinetti and H. T. Grahn and L. Geelhaar and O. Brandt }, title = { Enhanced radiative efficiency in GaN nanowires grown on sputtered TiNx }, journal = { ACS Photonics }, volume = { x }, year = { 2021 }, pages = { x } }

TY - JOUR AU - T. Auzelle AU - M. Azadmand AU - T. Flissikowski AU - M. Ramsteiner AU - K. Morgenroth AU - C. Stemmler AU - S. Fernández-Garrido AU - S. Sanguinetti AU - H. T. Grahn AU - L. Geelhaar AU - O. Brandt TI - Enhanced radiative efficiency in GaN nanowires grown on sputtered TiNx JF - ACS Photonics JA - ACS Photonics J1 - VL - x SP - x PY - 2021/05/12

Exchange-Striction Driven Ultrafast Nonthermal Lattice Dynamics in NiO

@article{ author = { Y. W. Windsor and D. Zahn and R. Kamrla and J. Feldl and H. Seiler and C.-T. Chiang and M. Ramsteiner and W. Widdra and R. Ernstorfer and L. Rettig }, title = { Exchange-Striction Driven Ultrafast Nonthermal Lattice Dynamics in NiO }, journal = { Physical Review Letters }, volume = { 126 }, year = { 2021 }, pages = { 147202 } }

TY - JOUR AU - Y. W. Windsor AU - D. Zahn AU - R. Kamrla AU - J. Feldl AU - H. Seiler AU - C.-T. Chiang AU - M. Ramsteiner AU - W. Widdra AU - R. Ernstorfer AU - L. Rettig TI - Exchange-Striction Driven Ultrafast Nonthermal Lattice Dynamics in NiO JF - Physical Review Letters JA - Phys. Rev. Lett. J1 - PRL VL - 126 SP - 147202 PY - 2021/04/08

Dependence of interfacial resistance switching on transition metal constituent M = Cu, Ag, and Ni for chalcogenides Bi-M-S

@article{ author = { Y. Takagaki and B. Jenichen and M. Ramsteiner and J. Herfort }, title = { Dependence of interfacial resistance switching on transition metal constituent M = Cu, Ag, and Ni for chalcogenides Bi-M-S }, journal = { Journal of Alloys and Compounds }, volume = { 858 }, year = { 2021 }, pages = { 157709 } }

TY - JOUR AU - Y. Takagaki AU - B. Jenichen AU - M. Ramsteiner AU - J. Herfort TI - Dependence of interfacial resistance switching on transition metal constituent M = Cu, Ag, and Ni for chalcogenides Bi-M-S JF - Journal of Alloys and Compounds JA - J. Alloy. Comp. J1 - VL - 858 SP - 157709 PY - 2021/01/28

SnO/beta-Ga2O3 vertical pn heterojunction diodes

@article{ author = { M. Budde and D. Splith and P. Mazzolini and A. Tahraoui and J. Feldl and M. Ramsteiner and H. von Wenckstern and M. Grundmann and O. Bierwagen }, title = { SnO/beta-Ga2O3 vertical pn heterojunction diodes }, journal = { Applied Physics Letters }, volume = { 117 }, year = { 2020 }, pages = { 252106 } }

TY - JOUR AU - M. Budde AU - D. Splith AU - P. Mazzolini AU - A. Tahraoui AU - J. Feldl AU - M. Ramsteiner AU - H. von Wenckstern AU - M. Grundmann AU - O. Bierwagen TI - SnO/beta-Ga2O3 vertical pn heterojunction diodes JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 117 SP - 252106 PY - 2020/12/22

Plasma-assisted molecular beam epitaxy of SnO(001) films: Metastability, hole transport properties, Seebeck coefficient, and effective hole mass

@article{ author = { M. Budde and P. Mazzolini and J. Feldl and C. Golz and T. Nagata and S. Ueda and G. Hoffmann and F. Hatami and W. T. Masselink and M. Ramsteiner and O. Bierwagen }, title = { Plasma-assisted molecular beam epitaxy of SnO(001) films: Metastability, hole transport properties, Seebeck coefficient, and effective hole mass }, journal = { Physical Review Materials }, volume = { 4 }, year = { 2020 }, pages = { 124602 } }

TY - JOUR AU - M. Budde AU - P. Mazzolini AU - J. Feldl AU - C. Golz AU - T. Nagata AU - S. Ueda AU - G. Hoffmann AU - F. Hatami AU - W. T. Masselink AU - M. Ramsteiner AU - O. Bierwagen TI - Plasma-assisted molecular beam epitaxy of SnO(001) films: Metastability, hole transport properties, Seebeck coefficient, and effective hole mass JF - Physical Review Materials JA - Phys. Rev. Mater. J1 - VL - 4 SP - 124602 PY - 2020/12/16

The impact of ultraviolet laser excitation during Raman spectroscopy of hexagonal boron nitride thin films

@article{ author = { M. Karim and J. M. J. Lopes and M. Ramsteiner }, title = { The impact of ultraviolet laser excitation during Raman spectroscopy of hexagonal boron nitride thin films }, journal = { Journal of Raman Spectroscopy }, volume = { 51 }, year = { 2020 }, pages = { 2468 } }

TY - JOUR AU - M. Karim AU - J. M. J. Lopes AU - M. Ramsteiner TI - The impact of ultraviolet laser excitation during Raman spectroscopy of hexagonal boron nitride thin films JF - Journal of Raman Spectroscopy JA - J. Raman Spectrosc. J1 - VL - 51 SP - 2468 PY - 2020/10/26

Electronic and magnetic properties of alpha-FeGe2 films embedded in vertical spin valve devices

@article{ author = { D. Czubak and S. Gaucher and L. Oppermann and J. Herfort and K. Zollner and J. Fabian and H. T. Grahn and M. Ramsteiner }, title = { Electronic and magnetic properties of alpha-FeGe2 films embedded in vertical spin valve devices }, journal = { Physical Review Materials }, volume = { 4 }, year = { 2020 }, pages = { 104415 } }

TY - JOUR AU - D. Czubak AU - S. Gaucher AU - L. Oppermann AU - J. Herfort AU - K. Zollner AU - J. Fabian AU - H. T. Grahn AU - M. Ramsteiner TI - Electronic and magnetic properties of alpha-FeGe2 films embedded in vertical spin valve devices JF - Physical Review Materials JA - Phys. Rev. Mater. J1 - VL - 4 SP - 104415 PY - 2020/10/26

Raman scattering in heavily donor doped beta-Ga2O3

@article{ author = { A. Fiedler and M. Ramsteiner and Z. Galazka and K. Irmscher }, title = { Raman scattering in heavily donor doped beta-Ga2O3 }, journal = { Applied Physics Letters }, volume = { 117 }, year = { 2020 }, pages = { 152107 } }

TY - JOUR AU - A. Fiedler AU - M. Ramsteiner AU - Z. Galazka AU - K. Irmscher TI - Raman scattering in heavily donor doped beta-Ga2O3 JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 117 SP - 152107 PY - 2020/10/14