Dr. Manfred Ramsteiner

Tailoring of Si doping-layers in GaAs during molecular beam epitaxy

@article{ author = { L. Däweritz and H. Kostial and M. Ramsteiner and R. Klann and P. Schützendübe and K. Stahrenberg and J. Behrend and R. Hey and M. Maier and K. Ploog }, title = { Tailoring of Si doping-layers in GaAs during molecular beam epitaxy }, journal = { Physica Status Solidi B }, volume = { 194 }, year = { 1996 }, pages = { 127 } }

TY - JOUR AU - L. Däweritz AU - H. Kostial AU - M. Ramsteiner AU - R. Klann AU - P. Schützendübe AU - K. Stahrenberg AU - J. Behrend AU - R. Hey AU - M. Maier AU - K. Ploog TI - Tailoring of Si doping-layers in GaAs during molecular beam epitaxy JF - Physica Status Solidi B JA - Phys. Status Solidi B J1 - PSSB VL - 194 SP - 127 PY - 1996/01/01

Exciton localization, photoluminescence spectra, and interface roughness in thin quantum wells

@article{ author = { U. Jahn and S. H. Kwok and M. Ramsteiner and R. Hey and H.T. Grahn and E. Runge }, title = { Exciton localization, photoluminescence spectra, and interface roughness in thin quantum wells }, journal = { Physical Review B: Solid State }, volume = { 54 }, year = { 1996 }, pages = { 2733 } }

TY - JOUR AU - U. Jahn AU - S. H. Kwok AU - M. Ramsteiner AU - R. Hey AU - H.T. Grahn AU - E. Runge TI - Exciton localization, photoluminescence spectra, and interface roughness in thin quantum wells JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 54 SP - 2733 PY - 1996/01/01

Non-equilibrium optical phonon population by sequential resonant tunneling in GaAs-AlAs superlattices

@article{ author = { S. H. Kwok and M. Ramsteiner and D. Bertram and M. Asche and H.T. Grahn and K. Ploog }, title = { Non-equilibrium optical phonon population by sequential resonant tunneling in GaAs-AlAs superlattices }, journal = { Physical Review B: Solid State }, volume = { 53 }, year = { 1996 }, pages = { R7634 } }

TY - JOUR AU - S. H. Kwok AU - M. Ramsteiner AU - D. Bertram AU - M. Asche AU - H.T. Grahn AU - K. Ploog TI - Non-equilibrium optical phonon population by sequential resonant tunneling in GaAs-AlAs superlattices JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 53 SP - R7634 PY - 1996/01/01

Selectivity of growth on patterned GaAs (311)A substrates

@article{ author = { R. Nötzel and J. Menniger and M. Ramsteiner and A. Ruiz and H.-P. Schönherr and K. H. Ploog }, title = { Selectivity of growth on patterned GaAs (311)A substrates }, journal = { Applied Physics Letters }, volume = { 68 }, year = { 1996 }, pages = { 1132 } }

TY - JOUR AU - R. Nötzel AU - J. Menniger AU - M. Ramsteiner AU - A. Ruiz AU - H.-P. Schönherr AU - K. H. Ploog TI - Selectivity of growth on patterned GaAs (311)A substrates JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 68 SP - 1132 PY - 1996/01/01

Micro-photoluminescence study at room temperature of sidewall quantum wires formed on patterned GaAs (311)A substrates by molecular beam epitaxy

@article{ author = { R. Nötzel and M. Ramsteiner and J. Menniger and A. Trampert and H.-P. Schönherr and L. Däweritz and K. H. Ploog }, title = { Micro-photoluminescence study at room temperature of sidewall quantum wires formed on patterned GaAs (311)A substrates by molecular beam epitaxy }, journal = { Japanese Journal of Applied Physics, Part 2 }, volume = { 35 }, year = { 1996 }, pages = { L297 } }

TY - JOUR AU - R. Nötzel AU - M. Ramsteiner AU - J. Menniger AU - A. Trampert AU - H.-P. Schönherr AU - L. Däweritz AU - K. H. Ploog TI - Micro-photoluminescence study at room temperature of sidewall quantum wires formed on patterned GaAs (311)A substrates by molecular beam epitaxy JF - Japanese Journal of Applied Physics, Part 2 JA - Jpn. J. Appl. Phys., Part 2 J1 - JJAP2 VL - 35 SP - L297 PY - 1996/01/01

Patterned growth on high-index GaAs (n11) substrates: application to sidewall quantum wires

@article{ author = { R. Nötzel and M. Ramsteiner and J. Menniger and A. Trampert and H.-P. Schönherr and L. Däweritz and K. H. Ploog }, title = { Patterned growth on high-index GaAs (n11) substrates: application to sidewall quantum wires }, journal = { Journal of Applied Physics }, volume = { 80 }, year = { 1996 }, pages = { 4108 } }

TY - JOUR AU - R. Nötzel AU - M. Ramsteiner AU - J. Menniger AU - A. Trampert AU - H.-P. Schönherr AU - L. Däweritz AU - K. H. Ploog TI - Patterned growth on high-index GaAs (n11) substrates: application to sidewall quantum wires JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 80 SP - 4108 PY - 1996/01/01

Photoluminescence enhancement induced by near surface Si doping wires in GaAs

@article{ author = { M. Ramsteiner and R. Klann and L. Däweritz and R. Hey and H. Kostial and G. Jungk }, title = { Photoluminescence enhancement induced by near surface Si doping wires in GaAs }, journal = { Solid-State Electronics }, volume = { 40 }, year = { 1996 }, pages = { 329 } }

TY - JOUR AU - M. Ramsteiner AU - R. Klann AU - L. Däweritz AU - R. Hey AU - H. Kostial AU - G. Jungk TI - Photoluminescence enhancement induced by near surface Si doping wires in GaAs JF - Solid-State Electronics JA - Solid-State Electron. J1 - SSE VL - 40 SP - 329 PY - 1996/01/01

Electronic Raman scattering from donors in GaN and the relationship to the yellow luminescence band

@article{ author = { M. Ramsteiner and J. Menniger and O. Brandt and H. Yang and K. H. Ploog }, title = { Electronic Raman scattering from donors in GaN and the relationship to the yellow luminescence band }, journal = { Proceedings of the 23rd International Conference on the Physics of Semiconductors; edited by M. Scheffler and R. Zimmermann (World Scientific, Singapore, 1996) }, volume = { }, year = { 1996 }, pages = { 2933 } }

TY - JOUR AU - M. Ramsteiner AU - J. Menniger AU - O. Brandt AU - H. Yang AU - K. H. Ploog TI - Electronic Raman scattering from donors in GaN and the relationship to the yellow luminescence band JF - Proceedings of the 23rd International Conference on the Physics of Semiconductors; edited by M. Scheffler and R. Zimmermann (World Scientific, Singapore, 1996) JA - Proc. ICPS 23 J1 - - VL - SP - 2933 PY - 1996/01/01

Shallow donors in GaN studied by electronic Raman scattering in resonance with yellow luminescence transitions

@article{ author = { M. Ramsteiner and J. Menniger and O. Brandt and H. Yang and K. H. Ploog }, title = { Shallow donors in GaN studied by electronic Raman scattering in resonance with yellow luminescence transitions }, journal = { Applied Physics Letters }, volume = { 69 }, year = { 1996 }, pages = { 1276 } }

TY - JOUR AU - M. Ramsteiner AU - J. Menniger AU - O. Brandt AU - H. Yang AU - K. H. Ploog TI - Shallow donors in GaN studied by electronic Raman scattering in resonance with yellow luminescence transitions JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 69 SP - 1276 PY - 1996/01/01

Ellipsometric investigations and luminescence properties of semiconductor microcavities

@article{ author = { G. Jungk and M. Ramsteiner and R. Hey }, title = { Ellipsometric investigations and luminescence properties of semiconductor microcavities }, journal = { Il Nuovo Cimento D }, volume = { 17 }, year = { 1995 }, pages = { 1519 } }

TY - JOUR AU - G. Jungk AU - M. Ramsteiner AU - R. Hey TI - Ellipsometric investigations and luminescence properties of semiconductor microcavities JF - Il Nuovo Cimento D JA - Nuovo Cimento D J1 - INCD VL - 17 SP - 1519 PY - 1995/01/01