Dr. Manfred Ramsteiner

Memristive resistive switch based on spontaneous barrier creation in metal-chalcogenide junctions

@article{ author = { Y. Takagaki and M. Ramsteiner and U. Jahn and B. Jenichen and A. Trampert }, title = { Memristive resistive switch based on spontaneous barrier creation in metal-chalcogenide junctions }, journal = { Journal of Physics D: Applied Physics }, volume = { 52 }, year = { 2019 }, pages = { 385101 } }

TY - JOUR AU - Y. Takagaki AU - M. Ramsteiner AU - U. Jahn AU - B. Jenichen AU - A. Trampert TI - Memristive resistive switch based on spontaneous barrier creation in metal-chalcogenide junctions JF - Journal of Physics D: Applied Physics JA - J. Phys. D: Appl. Phys. J1 - JPD VL - 52 SP - 385101 PY - 2019/07/15

Spin generation in completely MBE grown Co2FeSi/MgO/GaAs lateral spin valves

@article{ author = { G. Hoffmann and J. Herfort and M. Ramsteiner }, title = { Spin generation in completely MBE grown Co2FeSi/MgO/GaAs lateral spin valves }, journal = { Physical Review Materials }, volume = { 3 }, year = { 2019 }, pages = { 074402 } }

TY - JOUR AU - G. Hoffmann AU - J. Herfort AU - M. Ramsteiner TI - Spin generation in completely MBE grown Co2FeSi/MgO/GaAs lateral spin valves JF - Physical Review Materials JA - Phys. Rev. Mater. J1 - VL - 3 SP - 074402 PY - 2019/07/08

Indium incorporation in homoepitaxial β-Ga2O3 thin films grown by metal organic vapor phase epitaxy

@article{ author = { S. Bin Anooz and A. Popp and R. Grüneberg and C. Wouters and R. Schewski and M. Schmidbauer and M. Albrecht and A. Fiedler and M. Ramsteiner and D. Klimm and K. Irmscher and Z. Galazka and G. Wagner }, title = { Indium incorporation in homoepitaxial β-Ga2O3 thin films grown by metal organic vapor phase epitaxy }, journal = { Journal of Applied Physics }, volume = { 125 }, year = { 2019 }, pages = { 195702 } }

TY - JOUR AU - S. Bin Anooz AU - A. Popp AU - R. Grüneberg AU - C. Wouters AU - R. Schewski AU - M. Schmidbauer AU - M. Albrecht AU - A. Fiedler AU - M. Ramsteiner AU - D. Klimm AU - K. Irmscher AU - Z. Galazka AU - G. Wagner TI - Indium incorporation in homoepitaxial β-Ga2O3 thin films grown by metal organic vapor phase epitaxy JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 125 SP - 195702 PY - 2019/05/20

Excitonic Aharonov-Bohm oscillations in core-shell nanowires

@article{ author = { P. Corfdir and O. Marquardt and R. B. Lewis and C. Sinito and M. Ramsteiner and A. Trampert and U. Jahn and L. Geelhaar and O. Brandt and V. M. Fomin }, title = { Excitonic Aharonov-Bohm oscillations in core-shell nanowires }, journal = { Advanced Materials }, volume = { 31 }, year = { 2019 }, pages = { 1805645 } }

TY - JOUR AU - P. Corfdir AU - O. Marquardt AU - R. B. Lewis AU - C. Sinito AU - M. Ramsteiner AU - A. Trampert AU - U. Jahn AU - L. Geelhaar AU - O. Brandt AU - V. M. Fomin TI - Excitonic Aharonov-Bohm oscillations in core-shell nanowires JF - Advanced Materials JA - Adv. Mater. J1 - VL - 31 SP - 1805645 PY - 2019/01/15

Constituent substitution in hot wall deposition of Bi2S3 films by reaction with substrates

@article{ author = { Y. Takagaki and M. Ramsteiner and U. Jahn and B. Jenichen }, title = { Constituent substitution in hot wall deposition of Bi2S3 films by reaction with substrates }, journal = { Journal of Solid State Chemistry }, volume = { 270 }, year = { 2018 }, pages = { 219 } }

TY - JOUR AU - Y. Takagaki AU - M. Ramsteiner AU - U. Jahn AU - B. Jenichen TI - Constituent substitution in hot wall deposition of Bi2S3 films by reaction with substrates JF - Journal of Solid State Chemistry JA - J. Solid State Chem. J1 - VL - 270 SP - 219 PY - 2018/11/29

Electronic properties of wurtzite GaAs: A correlated structural, optical, and theoretical analysis of the same polytypic GaAs nanowire

@article{ author = { A. Senichev and P. Corfdir and O. Brandt and M. Ramsteiner and S. Breuer and J. Schilling and L. Geelhaar and P. Werner }, title = { Electronic properties of wurtzite GaAs: A correlated structural, optical, and theoretical analysis of the same polytypic GaAs nanowire }, journal = { Nano Research }, volume = { 11 }, year = { 2018 }, pages = { 4708 } }

TY - JOUR AU - A. Senichev AU - P. Corfdir AU - O. Brandt AU - M. Ramsteiner AU - S. Breuer AU - J. Schilling AU - L. Geelhaar AU - P. Werner TI - Electronic properties of wurtzite GaAs: A correlated structural, optical, and theoretical analysis of the same polytypic GaAs nanowire JF - Nano Research JA - Nano Res. J1 - VL - 11 SP - 4708 PY - 2018/08/15

Overgrowth of Bi2Te3 nanosheets on Fe-based epitaxial ferromagnetic layers

@article{ author = { Y. Takagaki and J. Herfort and M. Ramsteiner and U. Jahn and B. Jenichen }, title = { Overgrowth of Bi2Te3 nanosheets on Fe-based epitaxial ferromagnetic layers }, journal = { CrystEngComm }, volume = { 20 }, year = { 2018 }, pages = { 4173 } }

TY - JOUR AU - Y. Takagaki AU - J. Herfort AU - M. Ramsteiner AU - U. Jahn AU - B. Jenichen TI - Overgrowth of Bi2Te3 nanosheets on Fe-based epitaxial ferromagnetic layers JF - CrystEngComm JA - CrystEngComm J1 - ISSN 1466-8033 VL - 20 SP - 4173 PY - 2018/07/24

Structural, optical, and electrical properties of unintentionally doped NiO layers grown on MgO by plasma-assisted molecular beam epitaxy

@article{ author = { M. Budde and C. Tschammer and P. Franz and J. Feldl and M. Ramsteiner and R. Goldhahn and M. Feneberg and N. Barsan and A. Oprea and O. Bierwagen }, title = { Structural, optical, and electrical properties of unintentionally doped NiO layers grown on MgO by plasma-assisted molecular beam epitaxy }, journal = { Journal of Applied Physics }, volume = { 123 }, year = { 2018 }, pages = { 195301 } }

TY - JOUR AU - M. Budde AU - C. Tschammer AU - P. Franz AU - J. Feldl AU - M. Ramsteiner AU - R. Goldhahn AU - M. Feneberg AU - N. Barsan AU - A. Oprea AU - O. Bierwagen TI - Structural, optical, and electrical properties of unintentionally doped NiO layers grown on MgO by plasma-assisted molecular beam epitaxy JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 123 SP - 195301 PY - 2018/05/15

Nanostructuring of conduction channels in (In,Ga)As-InP heterostructures: Overcoming carrier generation caused by Ar ion milling

@article{ author = { V. Hortelano and H. Weidlich and M.P. Semtsiv and W. T. Masselink and M. Ramsteiner and U. Jahn and K. Biermann and Y. Takagaki }, title = { Nanostructuring of conduction channels in (In,Ga)As-InP heterostructures: Overcoming carrier generation caused by Ar ion milling }, journal = { Applied Physics Letters }, volume = { 112 }, year = { 2018 }, pages = { 151602 } }

TY - JOUR AU - V. Hortelano AU - H. Weidlich AU - M.P. Semtsiv AU - W. T. Masselink AU - M. Ramsteiner AU - U. Jahn AU - K. Biermann AU - Y. Takagaki TI - Nanostructuring of conduction channels in (In,Ga)As-InP heterostructures: Overcoming carrier generation caused by Ar ion milling JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 112 SP - 151602 PY - 2018/04/10

Plasma-assisted molecular beam epitaxy of GaN nanowires on epitaxial single-layer graphene

@article{ author = { S. Fernández-Garrido and M. Ramsteiner and L. A. Galves and C. Sinito and J. M. J. Lopes and L. Geelhaar and O. Brandt }, title = { Plasma-assisted molecular beam epitaxy of GaN nanowires on epitaxial single-layer graphene }, journal = { Proceedings of SPIE }, volume = { 10532 }, year = { 2018 }, pages = { 105321U } }

TY - JOUR AU - S. Fernández-Garrido AU - M. Ramsteiner AU - L. A. Galves AU - C. Sinito AU - J. M. J. Lopes AU - L. Geelhaar AU - O. Brandt TI - Plasma-assisted molecular beam epitaxy of GaN nanowires on epitaxial single-layer graphene JF - Proceedings of SPIE JA - Proc. SPIE J1 - VL - 10532 SP - 105321U PY - 2018/02/23