Dr. Manfred Ramsteiner

Quenching of the E₂ phonon line in the Raman spectra of wurtzite GaAs nanowires caused by the dielectric polarization contrast

@article{ author = { M. Ramsteiner and O. Brandt and P. Kusch and S. Breuer and S. Reich and L. Geelhaar }, title = { Quenching of the E₂ phonon line in the Raman spectra of wurtzite GaAs nanowires caused by the dielectric polarization contrast }, journal = { Applied Physics Letters }, volume = { 103 }, year = { 2013 }, pages = { 043121 } }

TY - JOUR AU - M. Ramsteiner AU - O. Brandt AU - P. Kusch AU - S. Breuer AU - S. Reich AU - L. Geelhaar TI - Quenching of the E₂ phonon line in the Raman spectra of wurtzite GaAs nanowires caused by the dielectric polarization contrast JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 103 SP - 043121 PY - 2013/01/01

Correlation between In content and emission wavelength of In_xGa_1-xN/GaN nanowire heterostructures

@article{ author = { M. Wölz and J. Lähnemann and O. Brandt and V. M. Kaganer and M. Ramsteiner and C. Pfüller and C. Hauswald and C. N. Huang and L. Geelhaar and H. Riechert }, title = { Correlation between In content and emission wavelength of In_xGa_1-xN/GaN nanowire heterostructures }, journal = { Nanotechnology }, volume = { 23 }, year = { 2012 }, pages = { 455203 } }

TY - JOUR AU - M. Wölz AU - J. Lähnemann AU - O. Brandt AU - V. M. Kaganer AU - M. Ramsteiner AU - C. Pfüller AU - C. Hauswald AU - C. N. Huang AU - L. Geelhaar AU - H. Riechert TI - Correlation between In content and emission wavelength of In_xGa_1-xN/GaN nanowire heterostructures JF - Nanotechnology JA - Nanotechnology J1 - NAN VL - 23 SP - 455203 PY - 2012/10/19

Luminescence of GaAs nanowires consisting of wurtzite and zinc-blende segments

@article{ author = { U. Jahn and J. Lähnemann and C. Pfüller and O. Brandt and S. Breuer and B. Jenichen and M. Ramsteiner and L. Geelhaar and H. Riechert }, title = { Luminescence of GaAs nanowires consisting of wurtzite and zinc-blende segments }, journal = { Physical Review B: Solid State }, volume = { 85 }, year = { 2012 }, pages = { 045323 } }

TY - JOUR AU - U. Jahn AU - J. Lähnemann AU - C. Pfüller AU - O. Brandt AU - S. Breuer AU - B. Jenichen AU - M. Ramsteiner AU - L. Geelhaar AU - H. Riechert TI - Luminescence of GaAs nanowires consisting of wurtzite and zinc-blende segments JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 85 SP - 045323 PY - 2012/01/30

Spatial distribution of structural disorder in Co₂FeSi films studied by anisotropic magnetoresistance

@article{ author = { P. Bruski and K.-J. Friedland and R. Farshchi and J. Herfort and M. Ramsteiner }, title = { Spatial distribution of structural disorder in Co₂FeSi films studied by anisotropic magnetoresistance }, journal = { Solid State Communications }, volume = { 152 }, year = { 2012 }, pages = { 1131 } }

TY - JOUR AU - P. Bruski AU - K.-J. Friedland AU - R. Farshchi AU - J. Herfort AU - M. Ramsteiner TI - Spatial distribution of structural disorder in Co₂FeSi films studied by anisotropic magnetoresistance JF - Solid State Communications JA - Solid State Commun. J1 - SSC VL - 152 SP - 1131 PY - 2012/01/01

Weak antilocalization and electron-electron interaction effects in Cu-doped Bi₂Se₃ films

@article{ author = { Y. Takagaki and B. Jenichen and U. Jahn and M. Ramsteiner and K.-J. Friedland }, title = { Weak antilocalization and electron-electron interaction effects in Cu-doped Bi₂Se₃ films }, journal = { Physical Review B: Solid State }, volume = { 85 }, year = { 2012 }, pages = { 115314 } }

TY - JOUR AU - Y. Takagaki AU - B. Jenichen AU - U. Jahn AU - M. Ramsteiner AU - K.-J. Friedland TI - Weak antilocalization and electron-electron interaction effects in Cu-doped Bi₂Se₃ films JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 85 SP - 115314 PY - 2012/01/01

Raman scattering by wavevector-dependent coupled plasmon/LO-phonon modes in n-type InN

@article{ author = { Y. J. Cho and M. Ramsteiner and O. Brandt }, title = { Raman scattering by wavevector-dependent coupled plasmon/LO-phonon modes in <em>n</em>-type InN }, journal = { Physical Review B: Solid State }, volume = { 85 }, year = { 2012 }, pages = { 195209 } }

TY - JOUR AU - Y. J. Cho AU - M. Ramsteiner AU - O. Brandt TI - Raman scattering by wavevector-dependent coupled plasmon/LO-phonon modes in <em>n</em>-type InN JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 85 SP - 195209 PY - 2012/01/01

Structural properties of InN films grown on O-face ZnO(000|1) by plasma-assisted molecular beam epitaxy

@article{ author = { Y. J. Cho and O. Brandt and M. Korytov and M. Albrecht and V. M. Kaganer and M. Ramsteiner and H. Riechert }, title = { Structural properties of InN films grown on O-face ZnO(000|1) by plasma-assisted molecular beam epitaxy }, journal = { Applied Physics Letters }, volume = { 100 }, year = { 2012 }, pages = { 152105 } }

TY - JOUR AU - Y. J. Cho AU - O. Brandt AU - M. Korytov AU - M. Albrecht AU - V. M. Kaganer AU - M. Ramsteiner AU - H. Riechert TI - Structural properties of InN films grown on O-face ZnO(000|1) by plasma-assisted molecular beam epitaxy JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 100 SP - 152105 PY - 2012/01/01

Incorporation of transition metals in the hot-wall-epitaxy growth of Bi₂Te₃ and Sb₂Te₃

@article{ author = { Y. Takagaki and U. Jahn and M. Ramsteiner }, title = { Incorporation of transition metals in the hot-wall-epitaxy growth of Bi₂Te₃ and Sb₂Te₃ }, journal = { Semiconductor Science and Technology }, volume = { 27 }, year = { 2012 }, pages = { 085006 } }

TY - JOUR AU - Y. Takagaki AU - U. Jahn AU - M. Ramsteiner TI - Incorporation of transition metals in the hot-wall-epitaxy growth of Bi₂Te₃ and Sb₂Te₃ JF - Semiconductor Science and Technology JA - Semicond. Sci. Technol. J1 - SST VL - 27 SP - 085006 PY - 2012/01/01

Band gap of wurtzite GaAs: A resonant Raman study

@article{ author = { P. Kusch and S. Breuer and M. Ramsteiner and L. Geelhaar and H. Riechert and S. Reich }, title = { Band gap of wurtzite GaAs: A resonant Raman study }, journal = { Physical Review B: Solid State }, volume = { 86 }, year = { 2012 }, pages = { 075317 } }

TY - JOUR AU - P. Kusch AU - S. Breuer AU - M. Ramsteiner AU - L. Geelhaar AU - H. Riechert AU - S. Reich TI - Band gap of wurtzite GaAs: A resonant Raman study JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 86 SP - 075317 PY - 2012/01/01

Raman spectroscopy as a probe for the coupling of light into ensembles of sub-wavelength-sized nanowires

@article{ author = { C. Pfüller and M. Ramsteiner and O. Brandt and F. Grosse and A. Rathsfeld and G. Schmidt and L. Geelhaar and H. Riechert }, title = { Raman spectroscopy as a probe for the coupling of light into ensembles of sub-wavelength-sized nanowires }, journal = { Applied Physics Letters }, volume = { 101 }, year = { 2012 }, pages = { 083104 } }

TY - JOUR AU - C. Pfüller AU - M. Ramsteiner AU - O. Brandt AU - F. Grosse AU - A. Rathsfeld AU - G. Schmidt AU - L. Geelhaar AU - H. Riechert TI - Raman spectroscopy as a probe for the coupling of light into ensembles of sub-wavelength-sized nanowires JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 101 SP - 083104 PY - 2012/01/01