Dr. Oliver Brandt

Exciton dynamics in GaAs(Al,Ga)As core-shell nanowires with shell quantum dots

@article{ author = { P. Corfdir and H. Küpers and R. B. Lewis and T. Flissikowski and H. T. Grahn and L. Geelhaar and O. Brandt }, title = { Exciton dynamics in GaAs(Al,Ga)As core-shell nanowires with shell quantum dots }, journal = { Physical Review B: Solid State }, volume = { 94 }, year = { 2016 }, pages = { 155413 } }

TY - JOUR AU - P. Corfdir AU - H. Küpers AU - R. B. Lewis AU - T. Flissikowski AU - H. T. Grahn AU - L. Geelhaar AU - O. Brandt TI - Exciton dynamics in GaAs(Al,Ga)As core-shell nanowires with shell quantum dots JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 94 SP - 155413 PY - 2016/10/11

Quenching of the luminescence intensity of GaN nanowires under electron beam exposure: Impact of C adsorption on the exciton lifetime

@article{ author = { J. Lähnemann and T. Flissikowski and M. Wölz and L. Geelhaar and H. T. Grahn and O. Brandt and U. Jahn }, title = { Quenching of the luminescence intensity of GaN nanowires under electron beam exposure: Impact of C adsorption on the exciton lifetime }, journal = { Nanotechnology }, volume = { 27 }, year = { 2016 }, pages = { 455706 } }

TY - JOUR AU - J. Lähnemann AU - T. Flissikowski AU - M. Wölz AU - L. Geelhaar AU - H. T. Grahn AU - O. Brandt AU - U. Jahn TI - Quenching of the luminescence intensity of GaN nanowires under electron beam exposure: Impact of C adsorption on the exciton lifetime JF - Nanotechnology JA - Nanotechnology J1 - NAN VL - 27 SP - 455706 PY - 2016/10/07

Comparison of the luminous efficiency of Ga- and N-polar InxGa1-xN/InyGa1-yN quantum wells grown by plasma-assisted molecular beam epitaxy

@article{ author = { S. Fernández-Garrido and J. Lähnemann and C. Hauswald and M. Korytov and M. Albrecht and C. Chèze and C. Skierbiszewski and O. Brandt }, title = { Comparison of the luminous efficiency of Ga- and N-polar InxGa1-xN/InyGa1-yN quantum wells grown by plasma-assisted molecular beam epitaxy }, journal = { Physical Review Applied }, volume = { 6 }, year = { 2016 }, pages = { 034017-01 } }

TY - JOUR AU - S. Fernández-Garrido AU - J. Lähnemann AU - C. Hauswald AU - M. Korytov AU - M. Albrecht AU - C. Chèze AU - C. Skierbiszewski AU - O. Brandt TI - Comparison of the luminous efficiency of Ga- and N-polar InxGa1-xN/InyGa1-yN quantum wells grown by plasma-assisted molecular beam epitaxy JF - Physical Review Applied JA - Phys. Rev. Appl. J1 - VL - 6 SP - 034017-01 PY - 2016/09/27

(Al,Ga)Ox microwire ensembles on Si exhibiting luminescence over the entire visible wavelength range

@article{ author = { F. Ishikawa and P. Corfdir and U. Jahn and O. Brandt }, title = { (Al,Ga)Ox microwire ensembles on Si exhibiting luminescence over the entire visible wavelength range }, journal = { Advanced Optical Materials }, volume = { 4 }, year = { 2016 }, pages = { 2017 } }

TY - JOUR AU - F. Ishikawa AU - P. Corfdir AU - U. Jahn AU - O. Brandt TI - (Al,Ga)Ox microwire ensembles on Si exhibiting luminescence over the entire visible wavelength range JF - Advanced Optical Materials JA - Adv. Opt. Mater. J1 - VL - 4 SP - 2017 PY - 2016/09/01

Exciton recombination at crystal-phase quantum rings in GaAs/InxGa1-xAs core/multishell nanowires

@article{ author = { P. Corfdir and R. B. Lewis and O. Marquardt and H. Küpers and J. Grandal and E. Dimakis and A. Trampert and L. Geelhaar and O. Brandt and R. T. Phillips }, title = { Exciton recombination at crystal-phase quantum rings in GaAs/InxGa1-xAs core/multishell nanowires }, journal = { Applied Physics Letters }, volume = { 109 }, year = { 2016 }, pages = { 082107 } }

TY - JOUR AU - P. Corfdir AU - R. B. Lewis AU - O. Marquardt AU - H. Küpers AU - J. Grandal AU - E. Dimakis AU - A. Trampert AU - L. Geelhaar AU - O. Brandt AU - R. T. Phillips TI - Exciton recombination at crystal-phase quantum rings in GaAs/InxGa1-xAs core/multishell nanowires JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 109 SP - 082107 PY - 2016/08/26

Individual electron and hole localization in submonolayer InN quantum sheets embedded in GaN

@article{ author = { F. Feix and T. Flissikowski and C. Chèze and R. Calarco and H. T. Grahn and O. Brandt }, title = { Individual electron and hole localization in submonolayer InN quantum sheets embedded in GaN }, journal = { Applied Physics Letters }, volume = { 109 }, year = { 2016 }, pages = { 042104 } }

TY - JOUR AU - F. Feix AU - T. Flissikowski AU - C. Chèze AU - R. Calarco AU - H. T. Grahn AU - O. Brandt TI - Individual electron and hole localization in submonolayer InN quantum sheets embedded in GaN JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 109 SP - 042104 PY - 2016/07/28

Self-assembled growth of GaN nanowires on amorphous AlxOy: from nucleation to the formation of dense nanowire ensembles

@article{ author = { M. Sobanska and S. Fernández-Garrido and Z. R. Zytkiewicz and G. Tchutchulashvili and S. Gieraltowska and O. Brandt and L. Geelhaar }, title = { Self-assembled growth of GaN nanowires on amorphous AlxOy: from nucleation to the formation of dense nanowire ensembles }, journal = { Nanotechnology }, volume = { 27 }, year = { 2016 }, pages = { 325601 } }

TY - JOUR AU - M. Sobanska AU - S. Fernández-Garrido AU - Z. R. Zytkiewicz AU - G. Tchutchulashvili AU - S. Gieraltowska AU - O. Brandt AU - L. Geelhaar TI - Self-assembled growth of GaN nanowires on amorphous AlxOy: from nucleation to the formation of dense nanowire ensembles JF - Nanotechnology JA - Nanotechnology J1 - NAN VL - 27 SP - 325601 PY - 2016/06/29

Nucleation, growth and bundling of GaN nanowires in molecular beam epitaxy: Disentangling the origin of nanowire coalescence

@article{ author = { V. M. Kaganer and S. Fernández-Garrido and P. Dogan and K. K. Sabelfeld and O. Brandt }, title = { Nucleation, growth and bundling of GaN nanowires in molecular beam epitaxy: Disentangling the origin of nanowire coalescence }, journal = { Nano Letters }, volume = { 16 }, year = { 2016 }, pages = { 3717 } }

TY - JOUR AU - V. M. Kaganer AU - S. Fernández-Garrido AU - P. Dogan AU - K. K. Sabelfeld AU - O. Brandt TI - Nucleation, growth and bundling of GaN nanowires in molecular beam epitaxy: Disentangling the origin of nanowire coalescence JF - Nano Letters JA - Nano Lett. J1 - VL - 16 SP - 3717 PY - 2016/06/08

Molecular beam epitaxy of single crystalline GaN nanowires on a flexible Ti foil

@article{ author = { G. Calabrese and P. Corfdir and G. Gao and C. Pfüller and A. Trampert and O. Brandt and L. Geelhaar and S. Fernández-Garrido }, title = { Molecular beam epitaxy of single crystalline GaN nanowires on a flexible Ti foil }, journal = { Applied Physics Letters }, volume = { 108 }, year = { 2016 }, pages = { 202101 } }

TY - JOUR AU - G. Calabrese AU - P. Corfdir AU - G. Gao AU - C. Pfüller AU - A. Trampert AU - O. Brandt AU - L. Geelhaar AU - S. Fernández-Garrido TI - Molecular beam epitaxy of single crystalline GaN nanowires on a flexible Ti foil JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 108 SP - 202101 PY - 2016/05/16

Crystal-phase quantum dots in GaN quantum wires

@article{ author = { P. Corfdir and C. Hauswald and O. Marquardt and T. Flissikowski and J. K. Zettler and S. Fernández-Garrido and L. Geelhaar and H. T. Grahn and O. Brandt }, title = { Crystal-phase quantum dots in GaN quantum wires }, journal = { Physical Review B: Solid State }, volume = { 93 }, year = { 2016 }, pages = { 115305 } }

TY - JOUR AU - P. Corfdir AU - C. Hauswald AU - O. Marquardt AU - T. Flissikowski AU - J. K. Zettler AU - S. Fernández-Garrido AU - L. Geelhaar AU - H. T. Grahn AU - O. Brandt TI - Crystal-phase quantum dots in GaN quantum wires JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 93 SP - 115305 PY - 2016/03/10