Dr. Oliver Brandt

Piezoelectric potential in axial (In,Ga)N/GaN nanowire heterostructures

@article{ author = { V. M. Kaganer and O. Marquardt and O. Brandt }, title = { Piezoelectric potential in axial (In,Ga)N/GaN nanowire heterostructures }, journal = { Nanotechnology }, volume = { 27 }, year = { 2016 }, pages = { 165201 } }

TY - JOUR AU - V. M. Kaganer AU - O. Marquardt AU - O. Brandt TI - Piezoelectric potential in axial (In,Ga)N/GaN nanowire heterostructures JF - Nanotechnology JA - Nanotechnology J1 - NAN VL - 27 SP - 165201 PY - 2016/03/10

Observation of dielectrically confined excitons in ultrathin GaN nanowires up to room temperature

@article{ author = { J. K. Zettler and P. Corfdir and C. Hauswald and E. Luna and U. Jahn and T. Flissikowski and E. Schmidt and C. Ronning and A. Trampert and L. Geelhaar and H. T. Grahn and O. Brandt and S. Fernández-Garrido }, title = { Observation of dielectrically confined excitons in ultrathin GaN nanowires up to room temperature }, journal = { Nano Letters }, volume = { 16 }, year = { 2016 }, pages = { 973 } }

TY - JOUR AU - J. K. Zettler AU - P. Corfdir AU - C. Hauswald AU - E. Luna AU - U. Jahn AU - T. Flissikowski AU - E. Schmidt AU - C. Ronning AU - A. Trampert AU - L. Geelhaar AU - H. T. Grahn AU - O. Brandt AU - S. Fernández-Garrido TI - Observation of dielectrically confined excitons in ultrathin GaN nanowires up to room temperature JF - Nano Letters JA - Nano Lett. J1 - VL - 16 SP - 973 PY - 2016/02/10

Impact of substrate nitridation on the growth of InN on In2O3(111) by plasma-assisted molecular beam epitaxy

@article{ author = { Y. Cho and S. Sadofev and S. Fernández-Garrido and R. Calarco and H. Riechert and Z. Galazka and R. Uecker and O. Brandt }, title = { Impact of substrate nitridation on the growth of InN on In2O3(111) by plasma-assisted molecular beam epitaxy }, journal = { Applied Surface Science }, volume = { 369 }, year = { 2016 }, pages = { 159 } }

TY - JOUR AU - Y. Cho AU - S. Sadofev AU - S. Fernández-Garrido AU - R. Calarco AU - H. Riechert AU - Z. Galazka AU - R. Uecker AU - O. Brandt TI - Impact of substrate nitridation on the growth of InN on In2O3(111) by plasma-assisted molecular beam epitaxy JF - Applied Surface Science JA - Appl. Surf. Sci. J1 - ASS VL - 369 SP - 159 PY - 2016/02/03

Counterintuitive strain distribution in axial (In,Ga)N/GaN nanowires

@article{ author = { T. Krause and M. Hanke and O. Brandt and A. Trampert }, title = { Counterintuitive strain distribution in axial (In,Ga)N/GaN nanowires }, journal = { Applied Physics Letters }, volume = { 108 }, year = { 2016 }, pages = { 032103 } }

TY - JOUR AU - T. Krause AU - M. Hanke AU - O. Brandt AU - A. Trampert TI - Counterintuitive strain distribution in axial (In,Ga)N/GaN nanowires JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 108 SP - 032103 PY - 2016/01/20

Radial Stark effect in (In,Ga)N nanowires

@article{ author = { J. Lähnemann and P. Corfdir and F. Feix and J. Kamimura and T. Flissikowski and H. T. Grahn and L. Geelhaar and O. Brandt }, title = { Radial Stark effect in (In,Ga)N nanowires }, journal = { Nano Letters }, volume = { 16 }, year = { 2016 }, pages = { 917 } }

TY - JOUR AU - J. Lähnemann AU - P. Corfdir AU - F. Feix AU - J. Kamimura AU - T. Flissikowski AU - H. T. Grahn AU - L. Geelhaar AU - O. Brandt TI - Radial Stark effect in (In,Ga)N nanowires JF - Nano Letters JA - Nano Lett. J1 - VL - 16 SP - 917 PY - 2016/01/20

Improved control over spontaneously formed GaN nanowires in molecular beam epitaxy using a two-step growth process

@article{ author = { J. K. Zettler and P. Corfdir and L. Geelhaar and H. Riechert and O. Brandt and S. Fernández-Garrido }, title = { Improved control over spontaneously formed GaN nanowires in molecular beam epitaxy using a two-step growth process }, journal = { Nanotechnology }, volume = { 26 }, year = { 2015 }, pages = { 445604 } }

TY - JOUR AU - J. K. Zettler AU - P. Corfdir AU - L. Geelhaar AU - H. Riechert AU - O. Brandt AU - S. Fernández-Garrido TI - Improved control over spontaneously formed GaN nanowires in molecular beam epitaxy using a two-step growth process JF - Nanotechnology JA - Nanotechnology J1 - NAN VL - 26 SP - 445604 PY - 2015/10/12

Integration of GaN crystals on micro-patterned Si(0 0 1) substrates by plasma-assisted molecular beam epitaxy

@article{ author = { F. Isa and C. Chèze and M. Siekacz and C. Hauswald and J. Lähnemann and S. Fernández-Garrido and T. Kreilinger and M. Ramsteiner and Y. A. Rojas Dasilva and O. Brandt and G. Isella and R. Erni and R. Calarco and H. Riechert and L. Miglio }, title = { Integration of GaN crystals on micro-patterned Si(0 0 1) substrates by plasma-assisted molecular beam epitaxy }, journal = { Crystal Growth & Design }, volume = { 15 }, year = { 2015 }, pages = { 4886 } }

TY - JOUR AU - F. Isa AU - C. Chèze AU - M. Siekacz AU - C. Hauswald AU - J. Lähnemann AU - S. Fernández-Garrido AU - T. Kreilinger AU - M. Ramsteiner AU - Y. A. Rojas Dasilva AU - O. Brandt AU - G. Isella AU - R. Erni AU - R. Calarco AU - H. Riechert AU - L. Miglio TI - Integration of GaN crystals on micro-patterned Si(0 0 1) substrates by plasma-assisted molecular beam epitaxy JF - Crystal Growth & Design JA - Cryst. Growth Des. J1 - VL - 15 SP - 4886 PY - 2015/09/14

Impact of individual dopants on the electronic properties of axial (In,Ga)N/GaN nanowire heterostructures

@article{ author = { O. Marquardt and L. Geelhaar and O. Brandt }, title = { Impact of individual dopants on the electronic properties of axial (In,Ga)N/GaN nanowire heterostructures }, journal = { IEEE }, volume = { IEEE Catalog Nr. CFP15817-PRT }, year = { 2015 }, pages = { 113 } }

TY - JOUR AU - O. Marquardt AU - L. Geelhaar AU - O. Brandt TI - Impact of individual dopants on the electronic properties of axial (In,Ga)N/GaN nanowire heterostructures JF - IEEE JA - IEEE J1 - VL - IEEE Catalog Nr. CFP15817-PRT SP - 113 PY - 2015/09/07

Quantitative evaluation of the broadening of x-ray diffraction, Raman, and photoluminescence lines by dislocation-induced strain in heteroepitaxial GaN films

@article{ author = { V. M. Kaganer and B. Jenichen and M. Ramsteiner and U. Jahn and C. Hauswald and F. Grosse and S. Fernández-Garrido and O. Brandt }, title = { Quantitative evaluation of the broadening of x-ray diffraction, Raman, and photoluminescence lines by dislocation-induced strain in heteroepitaxial GaN films }, journal = { Journal of Physics D: Applied Physics }, volume = { 48 }, year = { 2015 }, pages = { 385105 } }

TY - JOUR AU - V. M. Kaganer AU - B. Jenichen AU - M. Ramsteiner AU - U. Jahn AU - C. Hauswald AU - F. Grosse AU - S. Fernández-Garrido AU - O. Brandt TI - Quantitative evaluation of the broadening of x-ray diffraction, Raman, and photoluminescence lines by dislocation-induced strain in heteroepitaxial GaN films JF - Journal of Physics D: Applied Physics JA - J. Phys. D: Appl. Phys. J1 - JPD VL - 48 SP - 385105 PY - 2015/09/02

In-plane sixfold symmetry for α-Fe(110) on GaN{0001}: Measurement of the cubic anisotropy constant K3 of Fe

@article{ author = { C. Gao and C. Dong and C. Jia and D. Xue and J. Herfort and O. Brandt }, title = { In-plane sixfold symmetry for α-Fe(110) on GaN{0001}: Measurement of the cubic anisotropy constant K3 of Fe }, journal = { Physical Review B: Solid State }, volume = { 92 }, year = { 2015 }, pages = { 094404 } }

TY - JOUR AU - C. Gao AU - C. Dong AU - C. Jia AU - D. Xue AU - J. Herfort AU - O. Brandt TI - In-plane sixfold symmetry for α-Fe(110) on GaN{0001}: Measurement of the cubic anisotropy constant K3 of Fe JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 92 SP - 094404 PY - 2015/09/01