Dr. Oliver Brandt

High-temperature growth of GaN nanowires by molecular beam epitaxy: toward the material quality of bulk GaN

@article{ author = { J. K. Zettler and C. Hauswald and P. Corfdir and M. Musolino and L. Geelhaar and H. Riechert and O. Brandt and S. Fernández-Garrido }, title = { High-temperature growth of GaN nanowires by molecular beam epitaxy: toward the material quality of bulk GaN }, journal = { Crystal Growth & Design }, volume = { 15 }, year = { 2015 }, pages = { 4104 } }

TY - JOUR AU - J. K. Zettler AU - C. Hauswald AU - P. Corfdir AU - M. Musolino AU - L. Geelhaar AU - H. Riechert AU - O. Brandt AU - S. Fernández-Garrido TI - High-temperature growth of GaN nanowires by molecular beam epitaxy: toward the material quality of bulk GaN JF - Crystal Growth & Design JA - Cryst. Growth Des. J1 - VL - 15 SP - 4104 PY - 2015/06/29

Impact of random dopant fluctuations on the electronic properties of InxGa1-xN/GaN axial nanowire heterostructures

@article{ author = { O. Marquardt and L. Geelhaar and O. Brandt }, title = { Impact of random dopant fluctuations on the electronic properties of InxGa1-xN/GaN axial nanowire heterostructures }, journal = { Nano Letters }, volume = { 15 }, year = { 2015 }, pages = { 4289 } }

TY - JOUR AU - O. Marquardt AU - L. Geelhaar AU - O. Brandt TI - Impact of random dopant fluctuations on the electronic properties of InxGa1-xN/GaN axial nanowire heterostructures JF - Nano Letters JA - Nano Lett. J1 - VL - 15 SP - 4289 PY - 2015/06/09

Electronic properties of axial InxGa1-xN insertions in GaN nanowires

@article{ author = { O. Marquardt and L. Geelhaar and O. Brandt }, title = { Electronic properties of axial InxGa1-xN insertions in GaN nanowires }, journal = { Journal of Computational Electronics }, volume = { 14 }, year = { 2015 }, pages = { 464 } }

TY - JOUR AU - O. Marquardt AU - L. Geelhaar AU - O. Brandt TI - Electronic properties of axial InxGa1-xN insertions in GaN nanowires JF - Journal of Computational Electronics JA - J. Comput. Electron. J1 - VL - 14 SP - 464 PY - 2015/06/01

Epitaxial growth of GaN nanowires with high structural perfection on a metallic TiN film

@article{ author = { M. Wölz and C. Hauswald and T. Flissikowski and T. Gotschke and S. Fernández-Garrido and O. Brandt and H. T. Grahn and L. Geelhaar and H. Riechert }, title = { Epitaxial growth of GaN nanowires with high structural perfection on a metallic TiN film }, journal = { Nano Letters }, volume = { 15 }, year = { 2015 }, pages = { 3743 } }

TY - JOUR AU - M. Wölz AU - C. Hauswald AU - T. Flissikowski AU - T. Gotschke AU - S. Fernández-Garrido AU - O. Brandt AU - H. T. Grahn AU - L. Geelhaar AU - H. Riechert TI - Epitaxial growth of GaN nanowires with high structural perfection on a metallic TiN film JF - Nano Letters JA - Nano Lett. J1 - VL - 15 SP - 3743 PY - 2015/05/29

Importance of the dielectric contrast for the polarization of excitonic transitions in single GaN nanowires

@article{ author = { P. Corfdir and F. Feix and J. K. Zettler and S. Fernández-Garrido and O. Brandt }, title = { Importance of the dielectric contrast for the polarization of excitonic transitions in single GaN nanowires }, journal = { New Journal Physics }, volume = { 17 }, year = { 2015 }, pages = { 033040 } }

TY - JOUR AU - P. Corfdir AU - F. Feix AU - J. K. Zettler AU - S. Fernández-Garrido AU - O. Brandt TI - Importance of the dielectric contrast for the polarization of excitonic transitions in single GaN nanowires JF - New Journal Physics JA - New J. Phys. J1 - VL - 17 SP - 033040 PY - 2015/03/27

Atomistic description of wave function localization effects in In(x)Ga(1-x)N alloys and quantum wells

@article{ author = { S. Schulz and O. Marquardt and C. Coughlan and M. A. Caro and L. Geelhaar and O. Brandt and E. P. O'Reilly }, title = { Atomistic description of wave function localization effects in In(x)Ga(1-x)N alloys and quantum wells }, journal = { Proceedings of SPIE }, volume = { 9357 }, year = { 2015 }, pages = { } }

TY - JOUR AU - S. Schulz AU - O. Marquardt AU - C. Coughlan AU - M. A. Caro AU - L. Geelhaar AU - O. Brandt AU - E. P. O'Reilly TI - Atomistic description of wave function localization effects in In(x)Ga(1-x)N alloys and quantum wells JF - Proceedings of SPIE JA - Proc. SPIE J1 - VL - 9357 SP - PY - 2015/03/16

Monitoring the formation of nanowires by line-of-sight quadrupole mass spectrometry: a comprehensive description of the temporal evolution of GaN nanowire ensembles

@article{ author = { S. Fernández-Garrido and J. K. Zettler and L. Geelhaar and O. Brandt }, title = { Monitoring the formation of nanowires by line-of-sight quadrupole mass spectrometry: a comprehensive description of the temporal evolution of GaN nanowire ensembles }, journal = { Nano Letters }, volume = { 15 }, year = { 2015 }, pages = { 1930 } }

TY - JOUR AU - S. Fernández-Garrido AU - J. K. Zettler AU - L. Geelhaar AU - O. Brandt TI - Monitoring the formation of nanowires by line-of-sight quadrupole mass spectrometry: a comprehensive description of the temporal evolution of GaN nanowire ensembles JF - Nano Letters JA - Nano Lett. J1 - VL - 15 SP - 1930 PY - 2015/02/11

Compatibility of the selective area growth of GaN nanowires on AlN-buffered Si substrates with the operation of light emitting diodes

@article{ author = { M. Musolino and A. Tahraoui and S. Fernández-Garrido and O. Brandt and A. Trampert and L. Geelhaar and H. Riechert }, title = { Compatibility of the selective area growth of GaN nanowires on AlN-buffered Si substrates with the operation of light emitting diodes }, journal = { Nanotechnology }, volume = { 26 }, year = { 2015 }, pages = { 085605 } }

TY - JOUR AU - M. Musolino AU - A. Tahraoui AU - S. Fernández-Garrido AU - O. Brandt AU - A. Trampert AU - L. Geelhaar AU - H. Riechert TI - Compatibility of the selective area growth of GaN nanowires on AlN-buffered Si substrates with the operation of light emitting diodes JF - Nanotechnology JA - Nanotechnology J1 - NAN VL - 26 SP - 085605 PY - 2015/02/06

Stochastic model for the fluctuation-limited reaction-diffusion kinetics in inhomogeneous media based on the nonlinear Smoluchowski equations

@article{ author = { K. K. Sabelfeld and O. Brandt and V. M. Kaganer }, title = { Stochastic model for the fluctuation-limited reaction-diffusion kinetics in inhomogeneous media based on the nonlinear Smoluchowski equations }, journal = { Journal of Mathematical Chemistry }, volume = { 53 }, year = { 2015 }, pages = { 651 } }

TY - JOUR AU - K. K. Sabelfeld AU - O. Brandt AU - V. M. Kaganer TI - Stochastic model for the fluctuation-limited reaction-diffusion kinetics in inhomogeneous media based on the nonlinear Smoluchowski equations JF - Journal of Mathematical Chemistry JA - J. Math. Chem. J1 - VL - 53 SP - 651 PY - 2015/02/02

Non-destructive assessment of the polarity of GaN nanowire ensembles using low-energy electron diffraction and x-ray photoelectron diffraction

@article{ author = { O. Romanyuk and S. Fernández-Garrido and P. Jiricek and I. Bartos and L. Geelhaar and O. Brandt and T. Paskova }, title = { Non-destructive assessment of the polarity of GaN nanowire ensembles using low-energy electron diffraction and x-ray photoelectron diffraction }, journal = { Applied Physics Letters }, volume = { 106 }, year = { 2015 }, pages = { 021602 } }

TY - JOUR AU - O. Romanyuk AU - S. Fernández-Garrido AU - P. Jiricek AU - I. Bartos AU - L. Geelhaar AU - O. Brandt AU - T. Paskova TI - Non-destructive assessment of the polarity of GaN nanowire ensembles using low-energy electron diffraction and x-ray photoelectron diffraction JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 106 SP - 021602 PY - 2015/01/12