Senior Scientist
Core Research Area Coordinator
Telefon: +49 30 20377 332
Raum: 0535
Email: brandt@pdi-berlin.de
Abteilung: Semiconductor Spectroscopy
Core research areas: Nanoanalytics , Nanofabrication , III-V nanowires for optoelectronics
61 | Autor | J. K. Zettler , C. Hauswald , P. Corfdir , M. Musolino , L. Geelhaar , H. Riechert , O. Brandt , S. Fernández-Garrido |
Titel |
High-temperature growth of GaN nanowires by molecular beam epitaxy: toward the material quality of bulk GaN |
|
Source | Cryst. Growth Des. , 15 , 4104 ( 2015 ) | |
DOI : 10.1021/acs.cgd.5b00690 | Cite : Bibtex RIS |
62 | Autor | O. Marquardt , L. Geelhaar , O. Brandt |
Titel |
Impact of random dopant fluctuations on the electronic properties of InxGa1-xN/GaN axial nanowire heterostructures |
|
Source | Nano Lett. , 15 , 4289 ( 2015 ) | |
DOI : 10.1021/acs.nanolett.5b00101 | Cite : Bibtex RIS |
63 | Autor | O. Marquardt , L. Geelhaar , O. Brandt |
Titel |
Electronic properties of axial InxGa1-xN insertions in GaN nanowires |
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Source | J. Comput. Electron. , 14 , 464 ( 2015 ) | |
DOI : 10.1007/s10825-015-0669-1 | Cite : Bibtex RIS |
64 | Autor | M. Wölz , C. Hauswald , T. Flissikowski , T. Gotschke , S. Fernández-Garrido , O. Brandt , H. T. Grahn , L. Geelhaar , H. Riechert |
Titel |
Epitaxial growth of GaN nanowires with high structural perfection on a metallic TiN film |
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Source | Nano Lett. , 15 , 3743 ( 2015 ) | |
DOI : 10.1021/acs.nanolett.5b00251 | Cite : Bibtex RIS |
65 | Autor | P. Corfdir , F. Feix , J. K. Zettler , S. Fernández-Garrido , O. Brandt |
Titel |
Importance of the dielectric contrast for the polarization of excitonic transitions in single GaN nanowires |
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Source | New J. Phys. , 17 , 033040 ( 2015 ) | |
DOI : 10.1088/1367-2630/17/3/033040 | Download: PDF | Cite : Bibtex RIS |
66 | Autor | S. Schulz , O. Marquardt , C. Coughlan , M. A. Caro , L. Geelhaar , O. Brandt , E. P. O'Reilly |
Titel |
Atomistic description of wave function localization effects in In(x)Ga(1-x)N alloys and quantum wells |
|
Source | Proc. SPIE , 9357 , ( 2015 ) | |
DOI : 10.1117/12.2084800 | Download: PDF | Cite : Bibtex RIS |
67 | Autor | S. Fernández-Garrido , J. K. Zettler , L. Geelhaar , O. Brandt |
Titel |
Monitoring the formation of nanowires by line-of-sight quadrupole mass spectrometry: a comprehensive description of the temporal evolution of GaN nanowire ensembles |
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Source | Nano Lett. , 15 , 1930 ( 2015 ) | |
DOI : 10.1021/nl504778s | Cite : Bibtex RIS |
68 | Autor | M. Musolino , A. Tahraoui , S. Fernández-Garrido , O. Brandt , A. Trampert , L. Geelhaar , H. Riechert |
Titel |
Compatibility of the selective area growth of GaN nanowires on AlN-buffered Si substrates with the operation of light emitting diodes |
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Source | Nanotechnology , 26 , 085605 ( 2015 ) | |
DOI : 10.1088/0957-4484/26/8/085605 | arxiv: 1410.7546 | Cite : Bibtex RIS |
69 | Autor | K. K. Sabelfeld , O. Brandt , V. M. Kaganer |
Titel |
Stochastic model for the fluctuation-limited reaction-diffusion kinetics in inhomogeneous media based on the nonlinear Smoluchowski equations |
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Source | J. Math. Chem. , 53 , 651 ( 2015 ) | |
DOI : 10.1007/s10910-014-0446-6 | Cite : Bibtex RIS |
70 | Autor | O. Romanyuk , S. Fernández-Garrido , P. Jiricek , I. Bartos , L. Geelhaar , O. Brandt , T. Paskova |
Titel |
Non-destructive assessment of the polarity of GaN nanowire ensembles using low-energy electron diffraction and x-ray photoelectron diffraction |
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Source | Appl. Phys. Lett. , 106 , 021602 ( 2015 ) | |
DOI : 10.1063/1.4905651 | Download: PDF | Cite : Bibtex RIS |