Dr. Oliver Brandt

Influence of strain relaxation in axial (In,Ga)N/GaN nanowire heterostructures on their electronic properties

@article{ author = { O. Marquardt and T. Krause and V. M. Kaganer and J. Martin-Sanchez and M. Hanke and O. Brandt }, title = { Influence of strain relaxation in axial (In,Ga)N/GaN nanowire heterostructures on their electronic properties }, journal = { Nanotechnology }, volume = { 28 }, year = { 2017 }, pages = { 215204 } }

TY - JOUR AU - O. Marquardt AU - T. Krause AU - V. M. Kaganer AU - J. Martin-Sanchez AU - M. Hanke AU - O. Brandt TI - Influence of strain relaxation in axial (In,Ga)N/GaN nanowire heterostructures on their electronic properties JF - Nanotechnology JA - Nanotechnology J1 - NAN VL - 28 SP - 215204 PY - 2017/05/04

In/GaN(0001)- (√3 × √3) R30° adsorbate structure as a template for embedded (In,Ga)N/GaN monolayers and short-period superlattices

@article{ author = { C. Chèze and F. Feix and M. Anikeeva and T. Schulz and M. Albrecht and H. Riechert and O. Brandt and R. Calarco }, title = { In/GaN(0001)- (√3 × √3) R30° adsorbate structure as a template for embedded (In,Ga)N/GaN monolayers and short-period superlattices }, journal = { Applied Physics Letters }, volume = { 110 }, year = { 2017 }, pages = { 072104 } }

TY - JOUR AU - C. Chèze AU - F. Feix AU - M. Anikeeva AU - T. Schulz AU - M. Albrecht AU - H. Riechert AU - O. Brandt AU - R. Calarco TI - In/GaN(0001)- (√3 × √3) R30° adsorbate structure as a template for embedded (In,Ga)N/GaN monolayers and short-period superlattices JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 110 SP - 072104 PY - 2017/02/14

Luminous efficiency of ordered arrays of GaN nanowires with sub-wavelength diameters

@article{ author = { C. Hauswald and I. Giuntoni and T. Flissikowski and T. Gotschke and R. Calarco and H. T. Grahn and L. Geelhaar and O. Brandt }, title = { Luminous efficiency of ordered arrays of GaN nanowires with sub-wavelength diameters }, journal = { ACS Photonics }, volume = { 4 }, year = { 2017 }, pages = { 52 } }

TY - JOUR AU - C. Hauswald AU - I. Giuntoni AU - T. Flissikowski AU - T. Gotschke AU - R. Calarco AU - H. T. Grahn AU - L. Geelhaar AU - O. Brandt TI - Luminous efficiency of ordered arrays of GaN nanowires with sub-wavelength diameters JF - ACS Photonics JA - ACS Photonics J1 - VL - 4 SP - 52 PY - 2017/01/19

Polarity-induced selective area epitaxy of GaN nanowires

@article{ author = { Z. de Souza Schiaber and G. Calabrese and X. Kong and A. Trampert and B. Jenichen and J. H. Dias da Silva and L. Geelhaar and O. Brandt and S. Fernández-Garrido }, title = { Polarity-induced selective area epitaxy of GaN nanowires }, journal = { Nano Letters }, volume = { 17 }, year = { 2017 }, pages = { 63 } }

TY - JOUR AU - Z. de Souza Schiaber AU - G. Calabrese AU - X. Kong AU - A. Trampert AU - B. Jenichen AU - J. H. Dias da Silva AU - L. Geelhaar AU - O. Brandt AU - S. Fernández-Garrido TI - Polarity-induced selective area epitaxy of GaN nanowires JF - Nano Letters JA - Nano Lett. J1 - VL - 17 SP - 63 PY - 2017/01/11

Elastic vs. plastic strain relaxation in coalesced GaN nanowires: an x-ray diffraction study

@article{ author = { V. M. Kaganer and B. Jenichen and O. Brandt }, title = { Elastic vs. plastic strain relaxation in coalesced GaN nanowires: an x-ray diffraction study }, journal = { Physical Review Applied }, volume = { 6 }, year = { 2016 }, pages = { 064023 } }

TY - JOUR AU - V. M. Kaganer AU - B. Jenichen AU - O. Brandt TI - Elastic vs. plastic strain relaxation in coalesced GaN nanowires: an x-ray diffraction study JF - Physical Review Applied JA - Phys. Rev. Appl. J1 - VL - 6 SP - 064023 PY - 2016/12/29

Electron spin dynamics in cubic GaN

@article{ author = { J. H. Buß and T. Schupp and D. J. As and O. Brandt and D. Hägele and J. Rudolph }, title = { Electron spin dynamics in cubic GaN }, journal = { Physical Review B: Solid State }, volume = { 94 }, year = { 2016 }, pages = { 235202 } }

TY - JOUR AU - J. H. Buß AU - T. Schupp AU - D. J. As AU - O. Brandt AU - D. Hägele AU - J. Rudolph TI - Electron spin dynamics in cubic GaN JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 94 SP - 235202 PY - 2016/12/09

Broad-band light absorption and high photocurrent of (In,Ga)N nanowire photoanodes resulting from a radial Stark effect

@article{ author = { J. Kamimura and P. Bogdanoff and P. Corfdir and O. Brandt and H. Riechert and L. Geelhaar }, title = { Broad-band light absorption and high photocurrent of (In,Ga)N nanowire photoanodes resulting from a radial Stark effect }, journal = { ACS Applied Materials and Interfaces }, volume = { 8 }, year = { 2016 }, pages = { 34490 } }

TY - JOUR AU - J. Kamimura AU - P. Bogdanoff AU - P. Corfdir AU - O. Brandt AU - H. Riechert AU - L. Geelhaar TI - Broad-band light absorption and high photocurrent of (In,Ga)N nanowire photoanodes resulting from a radial Stark effect JF - ACS Applied Materials and Interfaces JA - ACS Appl. Mater. Interfaces J1 - VL - 8 SP - 34490 PY - 2016/11/30

Polarity in GaN and ZnO: theory, measurement, growth, and devices

@article{ author = { J. Zuniga-Perez and V. Consonni and L. Lymperakis and X. Kong and A. Trampert and S. Fernández-Garrido and O. Brandt and H. Renevier and S. Keller and K. Hestroffer and M. R. Wagner and J. Sebastián Reparaz and F. Akyol and S. Rajan and S. Rennesson and T. Palacios and G. Feuillet }, title = { Polarity in GaN and ZnO: theory, measurement, growth, and devices }, journal = { Applied Physics Reviews }, volume = { 3 }, year = { 2016 }, pages = { 041303 } }

TY - JOUR AU - J. Zuniga-Perez AU - V. Consonni AU - L. Lymperakis AU - X. Kong AU - A. Trampert AU - S. Fernández-Garrido AU - O. Brandt AU - H. Renevier AU - S. Keller AU - K. Hestroffer AU - M. R. Wagner AU - J. Sebastián Reparaz AU - F. Akyol AU - S. Rajan AU - S. Rennesson AU - T. Palacios AU - G. Feuillet TI - Polarity in GaN and ZnO: theory, measurement, growth, and devices JF - Applied Physics Reviews JA - Appl. Phys. Rev. J1 - VL - 3 SP - 041303 PY - 2016/11/15

Nature of excitons bound to inversion domain boundaries: Origin of the 3.45-eV luminescence lines in spontaneously formed GaN nanowires on Si(111)

@article{ author = { C. Pfüller and P. Corfdir and C. Hauswald and T. Flissikowski and X. Kong and J. K. Zettler and S. Fernández-Garrido and P. Dogan and H. T. Grahn and A. Trampert and L. Geelhaar and O. Brandt }, title = { Nature of excitons bound to inversion domain boundaries: Origin of the 3.45-eV luminescence lines in spontaneously formed GaN nanowires on Si(111) }, journal = { Physical Review B: Solid State }, volume = { 94 }, year = { 2016 }, pages = { 155308 } }

TY - JOUR AU - C. Pfüller AU - P. Corfdir AU - C. Hauswald AU - T. Flissikowski AU - X. Kong AU - J. K. Zettler AU - S. Fernández-Garrido AU - P. Dogan AU - H. T. Grahn AU - A. Trampert AU - L. Geelhaar AU - O. Brandt TI - Nature of excitons bound to inversion domain boundaries: Origin of the 3.45-eV luminescence lines in spontaneously formed GaN nanowires on Si(111) JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 94 SP - 155308 PY - 2016/10/17

Exciton dynamics in GaAs(Al,Ga)As core-shell nanowires with shell quantum dots

@article{ author = { P. Corfdir and H. Küpers and R. B. Lewis and T. Flissikowski and H. T. Grahn and L. Geelhaar and O. Brandt }, title = { Exciton dynamics in GaAs(Al,Ga)As core-shell nanowires with shell quantum dots }, journal = { Physical Review B: Solid State }, volume = { 94 }, year = { 2016 }, pages = { 155413 } }

TY - JOUR AU - P. Corfdir AU - H. Küpers AU - R. B. Lewis AU - T. Flissikowski AU - H. T. Grahn AU - L. Geelhaar AU - O. Brandt TI - Exciton dynamics in GaAs(Al,Ga)As core-shell nanowires with shell quantum dots JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 94 SP - 155413 PY - 2016/10/11