Dr. Achim Trampert

Head of Department Microstructure

Achim Trampert

Telefon: +49 30 20377 280

Raum: 0615

Email: trampert@pdi-berlin.de

 

Abteilung: Microstructure

Core research areas: Nanoanalytics , Nanofabrication , III-V nanowires for optoelectronics

 

 

41 Autor J. Berggren , M. Hanke , E. Luna , A. Trampert
Titel

Supernormal hardness increase of dilute Ga(As, N) thin films

Source J. Appl. Phys. , 121 , 095105 ( 2017 )
DOI : 10.1063/1.4978019 | Download: PDF | 2907 Cite : Bibtex RIS
J. Berggren, M. Hanke, E. Luna, and A. Trampert

42 Autor T. Krause , M. Hanke , L. Nicolai , Z. Cheng , M. Niehle , A. Trampert , M. Kahnt , G. Falkenberg , C. Schroer , J. Hartmann , H. Zhou , H.-H. Wehmann , A. Waag
Titel

Structural and compositional analysis of isolated core-shell (In,Ga)N/GaN rods based on nanofocus x-ray diffraction and scanning transmission electron microscopy

Source Phys. Rev. Appl. , 7 , 024033 ( 2017 )
DOI : 10.1103/PhysRevApplied.7.024033 | 2881 Cite : Bibtex RIS
T. Krause, M. Hanke, L. Nicolai, Z. Cheng, M. Niehle, A. Trampert, M. Kahnt, G. Falkenberg, C. Schroer, J. Hartmann, H. Zhou, H.-H. Wehmann, and A. Waag

43 Autor J.-B. Barakat , S. Dadgostar , K. Hestroffer , O. Bierwagen , A. Trampert , F. Hatami
Titel

Growth of GaP and AlGaP on GaP(111)B using gas-source molecular-beam epitaxy

Source J. Cryst. Growth , tbd , tbd ( 2017 )
DOI : 10.1016/j.jcrysgro.2017.02.029 | 2884 Cite : Bibtex RIS
J.-B. Barakat, S. Dadgostar, K. Hestroffer, O. Bierwagen, A. Trampert, and F. Hatami

44 Autor M. Niehle , A. Trampert , J.-B. Rodriguez , L. Cerutti , E. Tournie
Titel

Electron tomography on III-Sb heterostructures on vicinal Si(001) substrates: Anti-phase boundaries as a sink for threading dislocations

Source Scripta Materialia , 132 , 5 ( 2017 )
DOI : 10.1016/j.scriptamat.2017.01.018 | 2921 Cite : Bibtex RIS
M. Niehle, A. Trampert, J.-B. Rodriguez, L. Cerutti, and E. Tournie

45 Autor Z. de Souza Schiaber , G. Calabrese , X. Kong , A. Trampert , B. Jenichen , J. H. Dias da Silva , L. Geelhaar , O. Brandt , S. Fernández-Garrido
Titel

Polarity-induced selective area epitaxy of GaN nanowires

Source Nano Lett. , 17 , 63 ( 2017 )
DOI : 10.1021/acs.nanolett.6b03249 | 2856 Cite : Bibtex RIS
Z. de Souza Schiaber, G. Calabrese, X. Kong, A. Trampert, B. Jenichen, J. H. Dias da Silva, L. Geelhaar, O. Brandt, and S. Fernández-Garrido

46 Autor R. B. Lewis , L. Nicolai , H. Küpers , M. Ramsteiner , A. Trampert , L. Geelhaar
Titel

Anomalous strain relaxation in core-shell nanowires via simultaneous coherent and incoherent growth

Source Nano Lett. , 17 , 136 ( 2017 )
DOI : 10.1021/acs.nanolett.6b03681 | 2824 Cite : Bibtex RIS
R. B. Lewis, L. Nicolai, H. Küpers, M. Ramsteiner, A. Trampert, and L. Geelhaar

47 Autor B. Jenichen , J. Herfort , M. Hanke , U. Jahn , X. Kong , M. T. Dau , A. Trampert , H. Kirmse , S. C. Erwin
Titel

Structural Properties of Co2TiSi films on GaAs(001)

Source J. Appl. Phys. , 120 , 225304 ( 2016 )
DOI : 10.1063/1.4971344 | Download: PDF | 2853 Cite : Bibtex RIS
B. Jenichen, J. Herfort, M. Hanke, U. Jahn, X. Kong, M. T. Dau, A. Trampert, H. Kirmse, and S. C. Erwin

48 Autor P. Yu , J. Lin , L. Sun , Q. L. Le , X. Yu , G. Gao , C.-H. Hsu , D. Wu , T.-R. Chang , Q. Zeng , F. Liu , Q. J. Wang , H.-T. Jeng , H. Lin , A. Trampert , Z. Shen , K. Suenaga , Z. Liu
Titel

Metal–Semiconductor Phase-Transition in WSe2(1-x)Te2x Monolayer

Source Adv. Mater. , 1 ( 2016 )
DOI : 10.1002/adma.201603991 | 2892 Cite : Bibtex RIS
P. Yu, J. Lin, L. Sun, Q. L. Le, X. Yu, G. Gao, C.-H. Hsu, D. Wu, T.-R. Chang, Q. Zeng, F. Liu, Q. J. Wang, H.-T. Jeng, H. Lin, A. Trampert, Z. Shen, K. Suenaga, and Z. Liu

49 Autor G. Gao , C. Chen , X. Xie , Y. Su , S. Kang , G. Zhu , D. Gao , A. Trampert , L. Cai
Titel

Toward edges-rich MoS2 layers via chemical liquid exfoliation triggering distinctive magnetism

Source Mater. Res. Lett. , 1 ( 2016 )
DOI : 10.1080/21663831.2016.1256915 | 2891 Cite : Bibtex RIS
G. Gao, C. Chen, X. Xie, Y. Su, S. Kang, G. Zhu, D. Gao, A. Trampert, and L. Cai

50 Autor J. Zuniga-Perez , V. Consonni , L. Lymperakis , X. Kong , A. Trampert , S. Fernández-Garrido , O. Brandt , H. Renevier , S. Keller , K. Hestroffer , M. R. Wagner , J. Sebastián Reparaz , F. Akyol , S. Rajan , S. Rennesson , T. Palacios , G. Feuillet
Titel

Polarity in GaN and ZnO: theory, measurement, growth, and devices

Source Appl. Phys. Rev. , 3 , 041303 ( 2016 )
DOI : 10.1063/1.4963919 | 2816 Cite : Bibtex RIS
J. Zuniga-Perez, V. Consonni, L. Lymperakis, X. Kong, A. Trampert, S. Fernández-Garrido, O. Brandt, H. Renevier, S. Keller, K. Hestroffer, M. R. Wagner, J. Sebastián Reparaz, F. Akyol, S. Rajan, S. Rennesson, T. Palacios, and G. Feuillet