In this work, we report on the use of a focused ion beam (FIB) within a He ion microscope as a novel tool to deliberately create atomic-scale defects in graphene on SiC(0001), which act as nucleation centers for h-BN grown via molecular beam epitaxy. Thereby, we demonstrate a mask-less, selective-area growth of h-BN/graphene heterostacks, in which nucleation yield and crystal quality of h-BN is controlled by the ion beam parameter used for the defect formation in graphene. Importantly, the epitaxially grown h-BN exhibits electron tunneling characteristics comparable to those of h-BN flakes exfoliated from state-of-the-art bulk crystals. These results open a new pathway for the scalable fabrication of not only h-BN/graphene systems, but also of other vdW heterostructures composed of layered materials that can be synthesized via vdWE, such as magnetic 2D materials.
|1||Autor||M. Heilmann , V. Deinhart , A. Tahraoui , K. Höflich , J. M. J. Lopes|
Spatially controlled epitaxial growth of 2D heterostructures via defect engineering using a focused He ion beam
|Source||npj 2D Mater. Appl. , 5 , 70 ( 2021 )|
: 10.1038/s41699-021-00250-z |
arxiv: arXiv:2009.13910 |