The impact of substrate selection for the controlled growth of graphene by molecular beam epitaxy

@article{ author = { T. Schumann and J. M. J. Lopes and J. M. Wofford and M.H. Oliveira Jr. and M. Dubslaff and M. Hanke and U. Jahn and L. Geelhaar and H. Riechert }, title = { The impact of substrate selection for the controlled growth of graphene by molecular beam epitaxy }, journal = { Journal of Crystal Growth }, volume = { 425 }, year = { 2015 }, pages = { 274 } }

TY - JOUR AU - T. Schumann AU - J. M. J. Lopes AU - J. M. Wofford AU - M.H. Oliveira Jr. AU - M. Dubslaff AU - M. Hanke AU - U. Jahn AU - L. Geelhaar AU - H. Riechert TI - The impact of substrate selection for the controlled growth of graphene by molecular beam epitaxy JF - Journal of Crystal Growth JA - J. Cryst. Growth J1 - JGC VL - 425 SP - 274 PY - 2015/09/01

Synthesis of atomically thin hexagonal boron nitride films on nickel foils by molecular beam epitaxy

@article{ author = { S. Nakhaie and J. M. Wofford and T. Schumann and U. Jahn and M. Ramsteiner and M. Hanke and J. M. J. Lopes and H. Riechert }, title = { Synthesis of atomically thin hexagonal boron nitride films on nickel foils by molecular beam epitaxy }, journal = { Applied Physics Letters }, volume = { 106 }, year = { 2015 }, pages = { 213108 } }

TY - JOUR AU - S. Nakhaie AU - J. M. Wofford AU - T. Schumann AU - U. Jahn AU - M. Ramsteiner AU - M. Hanke AU - J. M. J. Lopes AU - H. Riechert TI - Synthesis of atomically thin hexagonal boron nitride films on nickel foils by molecular beam epitaxy JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 106 SP - 213108 PY - 2015/05/27

Picosecond strain dynamics in Ge2Sb2Te5 monitored by time-resolved x-ray diffraction

@article{ author = { P. Fons and P. Rodenbach and K. V. Mitrofanov and A. V. Kolobov and J. Tominaga and R. Shayduck and A. Giussani and R. Calarco and M. Hanke and H. Riechert and R.E. Simpson and M. Hase }, title = { Picosecond strain dynamics in Ge2Sb2Te5 monitored by time-resolved x-ray diffraction }, journal = { Physical Review B: Solid State }, volume = { 90 }, year = { 2014 }, pages = { 094305 } }

TY - JOUR AU - P. Fons AU - P. Rodenbach AU - K. V. Mitrofanov AU - A. V. Kolobov AU - J. Tominaga AU - R. Shayduck AU - A. Giussani AU - R. Calarco AU - M. Hanke AU - H. Riechert AU - R.E. Simpson AU - M. Hase TI - Picosecond strain dynamics in Ge2Sb2Te5 monitored by time-resolved x-ray diffraction JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 90 SP - 094305 PY - 2014/09/25

Plan-view transmission electron microscopy investigation of GaAs/(In,Ga)As core-shell nanowires

@article{ author = { J. Grandal and M. Wu and X. Kong and M. Hanke and E. Dimakis and L. Geelhaar and H. Riechert and A. Trampert }, title = { Plan-view transmission electron microscopy investigation of GaAs/(In,Ga)As core-shell nanowires }, journal = { Applied Physics Letters }, volume = { 105 }, year = { 2014 }, pages = { 121602 } }

TY - JOUR AU - J. Grandal AU - M. Wu AU - X. Kong AU - M. Hanke AU - E. Dimakis AU - L. Geelhaar AU - H. Riechert AU - A. Trampert TI - Plan-view transmission electron microscopy investigation of GaAs/(In,Ga)As core-shell nanowires JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 105 SP - 121602 PY - 2014/09/22

Localization and defects in axial (In,Ga)N/GaN nanowire heterostructures investigated by spatially-resolved luminescence spectroscopy

@article{ author = { J. Lähnemann and C. Hauswald and M. Wölz and U. Jahn and M. Hanke and L. Geelhaar and O. Brandt }, title = { Localization and defects in axial (In,Ga)N/GaN nanowire heterostructures investigated by spatially-resolved luminescence spectroscopy }, journal = { Journal of Physics D: Applied Physics }, volume = { 47 }, year = { 2014 }, pages = { 394010 } }

TY - JOUR AU - J. Lähnemann AU - C. Hauswald AU - M. Wölz AU - U. Jahn AU - M. Hanke AU - L. Geelhaar AU - O. Brandt TI - Localization and defects in axial (In,Ga)N/GaN nanowire heterostructures investigated by spatially-resolved luminescence spectroscopy JF - Journal of Physics D: Applied Physics JA - J. Phys. D: Appl. Phys. J1 - JPD VL - 47 SP - 394010 PY - 2014/09/12

In situ observation of epitaxial Li-Si-nanostructure formation on Si(111)

@article{ author = { F. Grosse and A. Proessdorf and M. Hanke and O. Bierwagen }, title = { In situ observation of epitaxial Li-Si-nanostructure formation on Si(111) }, journal = { Journal of Physical Chemistry C }, volume = { 118 }, year = { 2014 }, pages = { 21572 } }

TY - JOUR AU - F. Grosse AU - A. Proessdorf AU - M. Hanke AU - O. Bierwagen TI - In situ observation of epitaxial Li-Si-nanostructure formation on Si(111) JF - Journal of Physical Chemistry C JA - J. Phys. Chem. C J1 - VL - 118 SP - 21572 PY - 2014/08/28

Epitaxial polymorphism of La2O3 on Si(111) studied by in situ x-ray diffraction

@article{ author = { A. Proessdorf and M. Niehle and M. Hanke and F. Grosse and V. M. Kaganer and O. Bierwagen and A. Trampert }, title = { Epitaxial polymorphism of La2O3 on Si(111) studied by in situ x-ray diffraction }, journal = { Applied Physics Letters }, volume = { 105 }, year = { 2014 }, pages = { 021601 } }

TY - JOUR AU - A. Proessdorf AU - M. Niehle AU - M. Hanke AU - F. Grosse AU - V. M. Kaganer AU - O. Bierwagen AU - A. Trampert TI - Epitaxial polymorphism of La2O3 on Si(111) studied by in situ x-ray diffraction JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 105 SP - 021601 PY - 2014/07/14

The effect of the buffer layer coupling on the lattice parameter of epitaxial graphene on SiC(0001)

@article{ author = { T. Schumann and M. Dubslaff and M. H. Oliveira Jr. and M. Hanke and J. M. J. Lopes and H. Riechert }, title = { The effect of the buffer layer coupling on the lattice parameter of epitaxial graphene on SiC(0001) }, journal = { Physical Review B: Solid State }, volume = { 90 }, year = { 2014 }, pages = { 041403(R) } }

TY - JOUR AU - T. Schumann AU - M. Dubslaff AU - M. H. Oliveira Jr. AU - M. Hanke AU - J. M. J. Lopes AU - H. Riechert TI - The effect of the buffer layer coupling on the lattice parameter of epitaxial graphene on SiC(0001) JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 90 SP - 041403(R) PY - 2014/07/08

Structural investigation of nanocrystalline graphene grown on (6 sqrt 3 times 6 sqrt 3)R30°-reconstructed SiC surfaces by molecular beam epitaxy

@article{ author = { T. Schumann and M. Dubslaff and M. H. Oliveira, Jr. and M. Hanke and F. Fromm and T. Seyller and L. Nemec and V. Blum and M. Scheffler and J. M. J. Lopes and H. Riechert }, title = { Structural investigation of nanocrystalline graphene grown on (6 sqrt 3 times 6 sqrt 3)R30°-reconstructed SiC surfaces by molecular beam epitaxy }, journal = { New Journal Physics }, volume = { 15 }, year = { 2013 }, pages = { 123034 } }

TY - JOUR AU - T. Schumann AU - M. Dubslaff AU - M. H. Oliveira, Jr. AU - M. Hanke AU - F. Fromm AU - T. Seyller AU - L. Nemec AU - V. Blum AU - M. Scheffler AU - J. M. J. Lopes AU - H. Riechert TI - Structural investigation of nanocrystalline graphene grown on (6 sqrt 3 times 6 sqrt 3)R30°-reconstructed SiC surfaces by molecular beam epitaxy JF - New Journal Physics JA - New J. Phys. J1 - VL - 15 SP - 123034 PY - 2013/12/20

GaAs-Fe_3Si Core-Shell Nanowires: Nanobar Magnets

@article{ author = { M. Hilse and J. Herfort and B. Jenichen and A. Trampert and M. Hanke and P. Schaaf and L. Geelhaar and H. Riechert }, title = { GaAs-Fe_3Si Core-Shell Nanowires: Nanobar Magnets }, journal = { Nano Letters }, volume = { 13 }, year = { 2013 }, pages = { 6203 } }

TY - JOUR AU - M. Hilse AU - J. Herfort AU - B. Jenichen AU - A. Trampert AU - M. Hanke AU - P. Schaaf AU - L. Geelhaar AU - H. Riechert TI - GaAs-Fe_3Si Core-Shell Nanowires: Nanobar Magnets JF - Nano Letters JA - Nano Lett. J1 - VL - 13 SP - 6203 PY - 2013/11/25