Nucleation mechanisms of self-induced GaN nanowires grown on an amorphous interlayer

@article{ author = { V. Consonni and M. Hanke and M. Knelangen and L. Geelhaar and A. Trampert and H. Riechert }, title = { Nucleation mechanisms of self-induced GaN nanowires grown on an amorphous interlayer }, journal = { Physical Review B: Solid State }, volume = { 83 }, year = { 2011 }, pages = { 035310 } }

TY - JOUR AU - V. Consonni AU - M. Hanke AU - M. Knelangen AU - L. Geelhaar AU - A. Trampert AU - H. Riechert TI - Nucleation mechanisms of self-induced GaN nanowires grown on an amorphous interlayer JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 83 SP - 035310 PY - 2011/01/01

Diffuse x-ray scattering at low-dimensional nanostructures

@article{ author = { M. Hanke }, title = { Diffuse x-ray scattering at low-dimensional nanostructures }, journal = { Mechanical Stress on the Nanoscale; edited by M. Hanbuecken, P. Mueller, and R. B. Wehrspohn (Wiley, Weinheim, 2011) }, volume = { }, year = { 2011 }, pages = { 259 } }

TY - JOUR AU - M. Hanke TI - Diffuse x-ray scattering at low-dimensional nanostructures JF - Mechanical Stress on the Nanoscale; edited by M. Hanbuecken, P. Mueller, and R. B. Wehrspohn (Wiley, Weinheim, 2011) JA - MSN J1 - VL - SP - 259 PY - 2011/01/01

In(Ga)As/GaAs(001) quantum dot molecules probed by nanofocus high resolution x-ray diffraction with 100 nm resolution

@article{ author = { M. Dubslaff and M. Hanke and M. Burghammer and S. Schöder and R. Hoppe and C. G. Schroer and Yu. I. Mazur and Zh. M. Wang and J. H. Lee and G. J. Salamo }, title = { In(Ga)As/GaAs(001) quantum dot molecules probed by nanofocus high resolution x-ray diffraction with 100 nm resolution }, journal = { Applied Physics Letters }, volume = { 98 }, year = { 2011 }, pages = { 213105 } }

TY - JOUR AU - M. Dubslaff AU - M. Hanke AU - M. Burghammer AU - S. Schöder AU - R. Hoppe AU - C. G. Schroer AU - Yu. I. Mazur AU - Zh. M. Wang AU - J. H. Lee AU - G. J. Salamo TI - In(Ga)As/GaAs(001) quantum dot molecules probed by nanofocus high resolution x-ray diffraction with 100 nm resolution JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 98 SP - 213105 PY - 2011/01/01

Insight into the growth and control of single-crystal layers of Ge-Sb-Te phase-change material

@article{ author = { F. Katmis and R. Calarco and K. Perumal and P. Rodenbach and A. Giussani and M. Hanke and A. Proessdorf and A. Trampert and F. Grosse and R. Shayduk and R. Campion and W. Braun and H. Riechert }, title = { Insight into the growth and control of single-crystal layers of Ge-Sb-Te phase-change material }, journal = { Crystal Growth & Design }, volume = { 11 }, year = { 2011 }, pages = { 4606 } }

TY - JOUR AU - F. Katmis AU - R. Calarco AU - K. Perumal AU - P. Rodenbach AU - A. Giussani AU - M. Hanke AU - A. Proessdorf AU - A. Trampert AU - F. Grosse AU - R. Shayduk AU - R. Campion AU - W. Braun AU - H. Riechert TI - Insight into the growth and control of single-crystal layers of Ge-Sb-Te phase-change material JF - Crystal Growth & Design JA - Cryst. Growth Des. J1 - VL - 11 SP - 4606 PY - 2011/01/01

Monodisperse (In, Ga)N insertions in catalyst-free-grown GaN(0001) nanowires

@article{ author = { M. Knelangen and M. Hanke and E. Luna and L. Schrottke and O. Brandt and A. Trampert }, title = { Monodisperse (In, Ga)N insertions in catalyst-free-grown GaN(0001) nanowires }, journal = { Nanotechnology }, volume = { 22 }, year = { 2011 }, pages = { 365703 } }

TY - JOUR AU - M. Knelangen AU - M. Hanke AU - E. Luna AU - L. Schrottke AU - O. Brandt AU - A. Trampert TI - Monodisperse (In, Ga)N insertions in catalyst-free-grown GaN(0001) nanowires JF - Nanotechnology JA - Nanotechnology J1 - NAN VL - 22 SP - 365703 PY - 2011/01/01

X-ray nanodiffraction at individual SiGe/Si(001) dot molecules and its numerical description based on kinematical scattering theory

@article{ author = { M. Dubslaff and M. Hanke and S. Schöder and M. Burghammer and T. Boeck and J. Patommel }, title = { X-ray nanodiffraction at individual SiGe/Si(001) dot molecules and its numerical description based on kinematical scattering theory }, journal = { Applied Physics Letters }, volume = { 96 }, year = { 2010 }, pages = { 133107 } }

TY - JOUR AU - M. Dubslaff AU - M. Hanke AU - S. Schöder AU - M. Burghammer AU - T. Boeck AU - J. Patommel TI - X-ray nanodiffraction at individual SiGe/Si(001) dot molecules and its numerical description based on kinematical scattering theory JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 96 SP - 133107 PY - 2010/01/01

Peculiar three-dimensional ordering in (In,Ga)As/GaAs(311)B quantum dot superlattices

@article{ author = { M. Hanke and M. Schmidbauer and Zh. M. Wang and Yu. I. Mazur and Sh. Seydmohamadi and G. J. Salamo and T. D. Mishima and M. B. Johnson }, title = { Peculiar three-dimensional ordering in (In,Ga)As/GaAs(311)B quantum dot superlattices }, journal = { Applied Physics Letters }, volume = { 94 }, year = { 2009 }, pages = { 203105 } }

TY - JOUR AU - M. Hanke AU - M. Schmidbauer AU - Zh. M. Wang AU - Yu. I. Mazur AU - Sh. Seydmohamadi AU - G. J. Salamo AU - T. D. Mishima AU - M. B. Johnson TI - Peculiar three-dimensional ordering in (In,Ga)As/GaAs(311)B quantum dot superlattices JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 94 SP - 203105 PY - 2009/01/01

On the complex behavior of strain relaxation in (In,Ga)As/GaAs(001) quantum dot molecules

@article{ author = { M. Hanke and M. Dubslaff and M. Schmidbauer and Zh. M. Wang and Yu. I. Mazur and P. M. Lytvyn and J. H. Lee and G. J. Salamo }, title = { On the complex behavior of strain relaxation in (In,Ga)As/GaAs(001) quantum dot molecules }, journal = { Applied Physics Letters }, volume = { 95 }, year = { 2009 }, pages = { 023103 } }

TY - JOUR AU - M. Hanke AU - M. Dubslaff AU - M. Schmidbauer AU - Zh. M. Wang AU - Yu. I. Mazur AU - P. M. Lytvyn AU - J. H. Lee AU - G. J. Salamo TI - On the complex behavior of strain relaxation in (In,Ga)As/GaAs(001) quantum dot molecules JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 95 SP - 023103 PY - 2009/01/01

Shape-mediated anisotropic strain in self-assembled InP/In_0.48Ga_0.52P quantum dots

@article{ author = { M. Schmidbauer and F. Hatami and M. Hanke and P. Schäfer and K. Braune and W. T. Masselink and R. Köhler and M. Ramsteiner }, title = { Shape-mediated anisotropic strain in self-assembled InP/In_0.48Ga_0.52P quantum dots }, journal = { Physical Review B: Solid State }, volume = { 65 }, year = { 2002 }, pages = { 125320 } }

TY - JOUR AU - M. Schmidbauer AU - F. Hatami AU - M. Hanke AU - P. Schäfer AU - K. Braune AU - W. T. Masselink AU - R. Köhler AU - M. Ramsteiner TI - Shape-mediated anisotropic strain in self-assembled InP/In_0.48Ga_0.52P quantum dots JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 65 SP - 125320 PY - 2002/01/01