Nanofabrication

Dr. Lutz Geelhaar

Head of Department Epitaxy

Lutz Geelhaar

Telefon: +49 30 20377 359

Raum: 0714

Email: geelhaar@pdi-berlin.de

 

Abteilung: Epitaxy

Core research areas: Nanofabrication , III-V nanowires for optoelectronics

 

 

11 Autor M. Aghaeipour , L. Kasper , J. Herranz , L. Geelhaar , J. Bruns
Titel

Efficient adjustable light couplers of integrated III–V nanowire emitters on silicon waveguides based on ring resonators

Source Opt. Lett. , 45 , 4702 ( 2020 )
DOI : 10.1364/OL.398930 | 3210 Cite : Bibtex RIS
M. Aghaeipour, L. Kasper, J. Herranz, L. Geelhaar, and J. Bruns

12 Autor A. AlHassan , J. Lähnemann , A. Davtyan , M. Al-Humaidi , J. Herranz , D. Bahrami , T. Anjum , F. Bertram , A. B. Dey , L. Geelhaar , U. Pietsch
Titel

Beam damage of single semiconductor nanowires during X-ray nano beam diffraction experiments

Source J. Synchrotron Rad. , 27 , 1200 ( 2020 )
DOI : 10.1107/S1600577520009789 | Download: PDF | 3193 Cite : Bibtex RIS
A. AlHassan, J. Lähnemann, A. Davtyan, M. Al-Humaidi, J. Herranz, D. Bahrami, T. Anjum, F. Bertram, A. B. Dey, L. Geelhaar, and U. Pietsch

13 Autor G. Calabrese , D. van Treeck , V. M. Kaganer , O. Konovalov , P. Corfdir , C. Sinito , L. Geelhaar , O. Brandt , S. Fernández-Garrido
Titel

Radius-Dependent Homogeneous Strain in Uncoalesced GaN Nanowires

Source Acta Mat. , 195 , 87 ( 2020 )
DOI : 10.1016/j.actamat.2020.04.045 | 3147 Cite : Bibtex RIS
G. Calabrese, D. van Treeck, V. M. Kaganer, O. Konovalov, P. Corfdir, C. Sinito, L. Geelhaar, O. Brandt, and S. Fernández-Garrido

14 Autor A. AlHassan , J. Lähnemann , S. Leake , H. Küpers , M. Niehle , D. Bahrami , F. Bertram , R. B. Lewis , A. Davtyan , T. U. Schülli , L. Geelhaar , U. Pietsch
Titel

Spatially-resolved luminescence and crystal structure of single core-shell nanowires measured in the as-grown geometry

Source Nanotechnology , 31 , 214002 ( 2020 )
DOI : 10.1088/1361-6528/ab7590 | arxiv: 2002.08172 | 3173 Cite : Bibtex RIS
A. AlHassan, J. Lähnemann, S. Leake, H. Küpers, M. Niehle, D. Bahrami, F. Bertram, R. B. Lewis, A. Davtyan, T. U. Schülli, L. Geelhaar, and U. Pietsch

15 Autor M. Azadmand , T. Auzelle , J. Lähnemann , G. Gao , L. Nicolai , M. Ramsteiner , A. Trampert , S. Sanguinetti , O. Brandt , L. Geelhaar
Titel

Self-assembly of well-separated AlN nanowires directly on sputtered metallic TiN films

Source Phys. Status Solidi-Rapid Res. Lett. , 14 , 1900615 ( 2020 )
DOI : 10.1002/pssr.201900615 | arxiv: 1910.07391 | 3149 Cite : Bibtex RIS
M. Azadmand, T. Auzelle, J. Lähnemann, G. Gao, L. Nicolai, M. Ramsteiner, A. Trampert, S. Sanguinetti, O. Brandt, and L. Geelhaar

16 Autor D. van Treeck , S. Fernández-Garrido , L. Geelhaar
Titel

Influence of the source arrangement on shell growth around GaN nanowires in molecular beam epitaxy

Source Phys. Rev. Mater. , 4 , 013404 ( 2020 )
DOI : 10.1103/PhysRevMaterials.4.013404 | arxiv: 1907.10358 | 3109 Cite : Bibtex RIS
D. van Treeck, S. Fernández-Garrido, and L. Geelhaar

17 Autor J. Herranz , P. Corfdir , E. Luna , U. Jahn , R. B. Lewis , L. Schrottke , J. Lähnemann , A. Tahraoui , A. Trampert , O. Brandt , L. Geelhaar
Titel

Coaxial GaAs/(In,Ga)As dot-in-a-well nanowire heterostructures for electrically driven infrared light generation on Si in the telecommunication O band

Source ACS Appl. Nano Mater. , 3 , 165 ( 2020 )
DOI : 10.1021/acsanm.9b01866 | arxiv: 1908.10134 | 3132 Cite : Bibtex RIS
J. Herranz, P. Corfdir, E. Luna, U. Jahn, R. B. Lewis, L. Schrottke, J. Lähnemann, A. Tahraoui, A. Trampert, O. Brandt, and L. Geelhaar

18 Autor S. D. Seddon , C. Benjamin , J. I. Bryant , C. W. Burrows , M. Walker , G. Matheson , J. Herranz , L. Geelhaar , G. R. Bell
Titel

Work function of GaAs(hkl) and its modification using PEI: mechanisms and substrate dependence

Source Phys. Chem. Chem. Phys. , 21 , 24666 ( 2019 )
DOI : 10.1039/c9cp04490f | 3159 Cite : Bibtex RIS
S. D. Seddon, C. Benjamin, J. I. Bryant, C. W. Burrows, M. Walker, G. Matheson, J. Herranz, L. Geelhaar, and G. R. Bell

19 Autor H. Küpers , R. B. Lewis , L. Geelhaar
Titel

Predictive model for the temporal evolution of the shape of GaAs nanowires

Source J. Cryst. Growth , 531 , 125320 ( 2019 )
DOI : 10.1016/j.jcrysgro.2019.125320 | 3117 Cite : Bibtex RIS
H. Küpers, R. B. Lewis, and L. Geelhaar

20 Autor R. B. Lewis , A. Trampert , E. Luna , J. Herranz , C. Pfüller , L. Geelhaar
Titel

Bismuth-surfactant-induced growth and structure of InAs/GaAs(110) quantum dots

Source Semicond. Sci. Technol. , 34 , 105016 ( 2019 )
DOI : 10.1088/1361-6641/ab3c23 | arxiv: 1905.05303 | 3107 Cite : Bibtex RIS
R. B. Lewis, A. Trampert, E. Luna, J. Herranz, C. Pfüller, and L. Geelhaar