Absence of quantum-confined Stark effect in GaN quantum disks embedded in (Al,Ga)N nanowires grown by molecular beam epitaxy

@article{ author = { C. Sinito and P. Corfdir and C. Pfüller and G. Gao and J. Bartolomé and S. Kölling and A. Rodil Doblado and U. Jahn and J. Lähnemann and T. Auzelle and J. K. Zettler and T. Flissikowski and P. Koenraad and H. T. Grahn and L. Geelhaar and S. Fernández-Garrido and O. Brandt }, title = { Absence of quantum-confined Stark effect in GaN quantum disks embedded in (Al,Ga)N nanowires grown by molecular beam epitaxy }, journal = { Nano Letters }, volume = { 19 }, year = { 2019 }, pages = { 5938 } }

TY - JOUR AU - C. Sinito AU - P. Corfdir AU - C. Pfüller AU - G. Gao AU - J. Bartolomé AU - S. Kölling AU - A. Rodil Doblado AU - U. Jahn AU - J. Lähnemann AU - T. Auzelle AU - J. K. Zettler AU - T. Flissikowski AU - P. Koenraad AU - H. T. Grahn AU - L. Geelhaar AU - S. Fernández-Garrido AU - O. Brandt TI - Absence of quantum-confined Stark effect in GaN quantum disks embedded in (Al,Ga)N nanowires grown by molecular beam epitaxy JF - Nano Letters JA - Nano Lett. J1 - VL - 19 SP - 5938 PY - 2019/08/06

Axial GaAs/Ga(As,Bi) nanowire heterostructures

@article{ author = { M. Oliva and G. Gao and E. Luna and L. Geelhaar and R. B. Lewis }, title = { Axial GaAs/Ga(As,Bi) nanowire heterostructures }, journal = { Nanotechnology }, volume = { 30 }, year = { 2019 }, pages = { 425601 } }

TY - JOUR AU - M. Oliva AU - G. Gao AU - E. Luna AU - L. Geelhaar AU - R. B. Lewis TI - Axial GaAs/Ga(As,Bi) nanowire heterostructures JF - Nanotechnology JA - Nanotechnology J1 - NAN VL - 30 SP - 425601 PY - 2019/08/02

Analysis of incubation time preceding the Ga-assisted nucleation and growth of GaAs nanowires on Si(111)

@article{ author = { F. Bastiman and H. Küpers and C. Somaschini and V.G. Dubrovskii and L. Geelhaar }, title = { Analysis of incubation time preceding the Ga-assisted nucleation and growth of GaAs nanowires on Si(111) }, journal = { Physical Review Materials }, volume = { 3 }, year = { 2019 }, pages = { 073401 } }

TY - JOUR AU - F. Bastiman AU - H. Küpers AU - C. Somaschini AU - V.G. Dubrovskii AU - L. Geelhaar TI - Analysis of incubation time preceding the Ga-assisted nucleation and growth of GaAs nanowires on Si(111) JF - Physical Review Materials JA - Phys. Rev. Mater. J1 - VL - 3 SP - 073401 PY - 2019/07/09

Electroluminescence and current-voltage measurements of single (In,Ga)N/GaN nanowire light-emitting diodes in a nanowire ensemble

@article{ author = { D. van Treeck and J. Ledig and G. Scholz and J. Lähnemann and M. Musolino and A. Tahraoui and O. Brandt and A. Waag and H. Riechert and L. Geelhaar }, title = { Electroluminescence and current-voltage measurements of single (In,Ga)N/GaN nanowire light-emitting diodes in a nanowire ensemble }, journal = { Beilstein Journal of Nanotechnology }, volume = { 10 }, year = { 2019 }, pages = { 1177 } }

TY - JOUR AU - D. van Treeck AU - J. Ledig AU - G. Scholz AU - J. Lähnemann AU - M. Musolino AU - A. Tahraoui AU - O. Brandt AU - A. Waag AU - H. Riechert AU - L. Geelhaar TI - Electroluminescence and current-voltage measurements of single (In,Ga)N/GaN nanowire light-emitting diodes in a nanowire ensemble JF - Beilstein Journal of Nanotechnology JA - Beilstein J. Nanotechnol. J1 - VL - 10 SP - 1177 PY - 2019/06/05

Impact of the Shadowing Effect on the Crystal Structure of Patterned Self-Catalyzed GaAs Nanowires

@article{ author = { P. Schroth and M. Al Humaidi and L. Feigl and J. Jakob and A. Al Hassan and A. Davtyan and H. Küpers and A. Tahraoui and L. Geelhaar and U. Pietsch and T. Baumbach }, title = { Impact of the Shadowing Effect on the Crystal Structure of Patterned Self-Catalyzed GaAs Nanowires }, journal = { Nano Letters }, volume = { 19 }, year = { 2019 }, pages = { 4263 } }

TY - JOUR AU - P. Schroth AU - M. Al Humaidi AU - L. Feigl AU - J. Jakob AU - A. Al Hassan AU - A. Davtyan AU - H. Küpers AU - A. Tahraoui AU - L. Geelhaar AU - U. Pietsch AU - T. Baumbach TI - Impact of the Shadowing Effect on the Crystal Structure of Patterned Self-Catalyzed GaAs Nanowires JF - Nano Letters JA - Nano Lett. J1 - VL - 19 SP - 4263 PY - 2019/05/31

Correlated nanoscale analysis of the emission from wurtzite versus zincblende (In,Ga)As/GaAs nanowire core-shell quantum wells

@article{ author = { J. Lähnemann and M. O. Hill and J. Herranz and O. Marquardt and G. Gao and A. Al Hassan and A. Davtyan and S. O. Hruszkewycz and M. V. Holt and C. Huang and I. Calvo-Almazán and U. Jahn and U. Pietsch and L. J. Lauhon and L. Geelhaar }, title = { Correlated nanoscale analysis of the emission from wurtzite versus zincblende (In,Ga)As/GaAs nanowire core-shell quantum wells }, journal = { Nano Letters }, volume = { 19 }, year = { 2019 }, pages = { 4448 } }

TY - JOUR AU - J. Lähnemann AU - M. O. Hill AU - J. Herranz AU - O. Marquardt AU - G. Gao AU - A. Al Hassan AU - A. Davtyan AU - S. O. Hruszkewycz AU - M. V. Holt AU - C. Huang AU - I. Calvo-Almazán AU - U. Jahn AU - U. Pietsch AU - L. J. Lauhon AU - L. Geelhaar TI - Correlated nanoscale analysis of the emission from wurtzite versus zincblende (In,Ga)As/GaAs nanowire core-shell quantum wells JF - Nano Letters JA - Nano Lett. J1 - VL - 19 SP - 4448 PY - 2019/05/29

Optical properties of GaN Nanowires grown on chemical vapor deposited-Graphene

@article{ author = { L. Mancini and M. Morassi and C. Sinito and O. Brandt and L. Geelhaar and H.G. Song and Y.H. Cho and N. Guan and A. Madouri and C. Barbier and L. Largeau and A. Babichev and F.H. Julien and L. Travers and F. Oehler and N. Gogneau and J.C. Harmand and M. Tchernycheva }, title = { Optical properties of GaN Nanowires grown on chemical vapor deposited-Graphene }, journal = { Nanotechnology }, volume = { 30 }, year = { 2019 }, pages = { 214005 } }

TY - JOUR AU - L. Mancini AU - M. Morassi AU - C. Sinito AU - O. Brandt AU - L. Geelhaar AU - H.G. Song AU - Y.H. Cho AU - N. Guan AU - A. Madouri AU - C. Barbier AU - L. Largeau AU - A. Babichev AU - F.H. Julien AU - L. Travers AU - F. Oehler AU - N. Gogneau AU - J.C. Harmand AU - M. Tchernycheva TI - Optical properties of GaN Nanowires grown on chemical vapor deposited-Graphene JF - Nanotechnology JA - Nanotechnology J1 - NAN VL - 30 SP - 214005 PY - 2019/03/14

Comprehensive analysis of the self-assembled formation of GaN nanowires on amorphous AlxOy: in situ quadrupole mass spectrometry studies

@article{ author = { M. Sobanska and Z. R. Zytkiewicz and G. Calabrese and L. Geelhaar and S. Fernández-Garrido }, title = { Comprehensive analysis of the self-assembled formation of GaN nanowires on amorphous AlxOy: in situ quadrupole mass spectrometry studies }, journal = { Nanotechnology }, volume = { 30 }, year = { 2019 }, pages = { 154002 } }

TY - JOUR AU - M. Sobanska AU - Z. R. Zytkiewicz AU - G. Calabrese AU - L. Geelhaar AU - S. Fernández-Garrido TI - Comprehensive analysis of the self-assembled formation of GaN nanowires on amorphous AlxOy: in situ quadrupole mass spectrometry studies JF - Nanotechnology JA - Nanotechnology J1 - NAN VL - 30 SP - 154002 PY - 2019/02/12

Impact of outer shell structure and localization effects on charge carrier dynamics in GaAs/(In,Ga)As nanowire core-shell quantum wells

@article{ author = { H. Küpers and P. Corfdir and R. B. Lewis and T. Flissikowski and A. Tahraoui and H. T. Grahn and O. Brandt and L. Geelhaar }, title = { Impact of outer shell structure and localization effects on charge carrier dynamics in GaAs/(In,Ga)As nanowire core-shell quantum wells }, journal = { Physica Status Solidi Rapid Research Letters }, volume = { 13 }, year = { 2019 }, pages = { 1800527 } }

TY - JOUR AU - H. Küpers AU - P. Corfdir AU - R. B. Lewis AU - T. Flissikowski AU - A. Tahraoui AU - H. T. Grahn AU - O. Brandt AU - L. Geelhaar TI - Impact of outer shell structure and localization effects on charge carrier dynamics in GaAs/(In,Ga)As nanowire core-shell quantum wells JF - Physica Status Solidi Rapid Research Letters JA - Phys. Status Solidi-Rapid Res. Lett. J1 - VL - 13 SP - 1800527 PY - 2019/02/07

Interfacial reactions during the molecular beam epitaxy of GaN nanowires on Ti/Al2O3

@article{ author = { G. Calabrese and G. Gao and D. van Treeck and P. Corfdir and C. Sinito and T. Auzelle and A. Trampert and L. Geelhaar and O. Brandt and S. Fernández-Garrido }, title = { Interfacial reactions during the molecular beam epitaxy of GaN nanowires on Ti/Al2O3 }, journal = { Nanotechnology }, volume = { 30 }, year = { 2019 }, pages = { 114001 } }

TY - JOUR AU - G. Calabrese AU - G. Gao AU - D. van Treeck AU - P. Corfdir AU - C. Sinito AU - T. Auzelle AU - A. Trampert AU - L. Geelhaar AU - O. Brandt AU - S. Fernández-Garrido TI - Interfacial reactions during the molecular beam epitaxy of GaN nanowires on Ti/Al2O3 JF - Nanotechnology JA - Nanotechnology J1 - NAN VL - 30 SP - 114001 PY - 2019/01/25