Nano x-ray fluorescence of individual GaAs/InGaAs core-shell nanowires

@article{ author = { A. Al Hassan and R. B. Lewis and H. Küpers and W. H. Lin and D. Bahrami and T. Krause and D. Salomon and A. Tahraoui and M. Hanke and L. Geelhaar and U. Pietsch }, title = { Nano x-ray fluorescence of individual GaAs/InGaAs core-shell nanowires }, journal = { Physical Review Materials }, volume = { 2 }, year = { 2018 }, pages = { 014604 } }

TY - JOUR AU - A. Al Hassan AU - R. B. Lewis AU - H. Küpers AU - W. H. Lin AU - D. Bahrami AU - T. Krause AU - D. Salomon AU - A. Tahraoui AU - M. Hanke AU - L. Geelhaar AU - U. Pietsch TI - Nano x-ray fluorescence of individual GaAs/InGaAs core-shell nanowires JF - Physical Review Materials JA - Phys. Rev. Mater. J1 - VL - 2 SP - 014604 PY - 2018/01/19

Self-Assembled Formation of Long, Thin, and Uncoalesced GaN Nanowires on Crystalline TiN Films

@article{ author = { D. van Treeck and G. Calabrese and J. Goertz and V. M. Kaganer and O. Brandt and S. Fernández-Garrido and L. Geelhaar }, title = { Self-Assembled Formation of Long, Thin, and Uncoalesced GaN Nanowires on Crystalline TiN Films }, journal = { Nano Research }, volume = { 11, Issue 1 }, year = { 2018 }, pages = { 565 } }

TY - JOUR AU - D. van Treeck AU - G. Calabrese AU - J. Goertz AU - V. M. Kaganer AU - O. Brandt AU - S. Fernández-Garrido AU - L. Geelhaar TI - Self-Assembled Formation of Long, Thin, and Uncoalesced GaN Nanowires on Crystalline TiN Films JF - Nano Research JA - Nano Res. J1 - VL - 11, Issue 1 SP - 565 PY - 2018/01/01

Surface preparation and patterning by nano imprint lithography for the selective area growth of GaAs nanowires on Si(111)

@article{ author = { H. Küpers and A. Tahraoui and R. B. Lewis and S. Rauwerdink and M. Matalla and O. Krüger and F. Bastiman and H. Riechert and L. Geelhaar }, title = { Surface preparation and patterning by nano imprint lithography for the selective area growth of GaAs nanowires on Si(111) }, journal = { Semiconductor Science and Technology }, volume = { 32 }, year = { 2017 }, pages = { 115003 } }

TY - JOUR AU - H. Küpers AU - A. Tahraoui AU - R. B. Lewis AU - S. Rauwerdink AU - M. Matalla AU - O. Krüger AU - F. Bastiman AU - H. Riechert AU - L. Geelhaar TI - Surface preparation and patterning by nano imprint lithography for the selective area growth of GaAs nanowires on Si(111) JF - Semiconductor Science and Technology JA - Semicond. Sci. Technol. J1 - SST VL - 32 SP - 115003 PY - 2017/09/29

Effect of substrate roughness, chemical composition, and native oxide crystallinity on the orientation of self-assembled GaN nanowires on Ti foils

@article{ author = { G. Calabrese and S. V. Pettersen and C. Pfüller and M. Ramsteiner and J. Grepstad and O. Brandt and L. Geelhaar and S. Fernández-Garrido }, title = { Effect of substrate roughness, chemical composition, and native oxide crystallinity on the orientation of self-assembled GaN nanowires on Ti foils }, journal = { Nanotechnology }, volume = { 28 }, year = { 2017 }, pages = { 425602 } }

TY - JOUR AU - G. Calabrese AU - S. V. Pettersen AU - C. Pfüller AU - M. Ramsteiner AU - J. Grepstad AU - O. Brandt AU - L. Geelhaar AU - S. Fernández-Garrido TI - Effect of substrate roughness, chemical composition, and native oxide crystallinity on the orientation of self-assembled GaN nanowires on Ti foils JF - Nanotechnology JA - Nanotechnology J1 - NAN VL - 28 SP - 425602 PY - 2017/09/20

Molecular Beam Epitaxy of GaN Nanowires on Epitaxial Graphene

@article{ author = { S. Fernández-Garrido and M. Ramsteiner and G. Gao and L. A. Galves and Bharat Sharma and P. Corfdir and G. Calabrese and Z. de Souza Schiaber and C. Pfüller and A. Trampert and J. M. J. Lopes and O. Brandt and L. Geelhaar }, title = { Molecular Beam Epitaxy of GaN Nanowires on Epitaxial Graphene }, journal = { Nano Letters }, volume = { 17 }, year = { 2017 }, pages = { 5213 } }

TY - JOUR AU - S. Fernández-Garrido AU - M. Ramsteiner AU - G. Gao AU - L. A. Galves AU - Bharat Sharma AU - P. Corfdir AU - G. Calabrese AU - Z. de Souza Schiaber AU - C. Pfüller AU - A. Trampert AU - J. M. J. Lopes AU - O. Brandt AU - L. Geelhaar TI - Molecular Beam Epitaxy of GaN Nanowires on Epitaxial Graphene JF - Nano Letters JA - Nano Lett. J1 - VL - 17 SP - 5213 PY - 2017/09/13

Efficient methodology to correlate structural with optical properties of GaAs nanowires based on scanning electron microscopy

@article{ author = { W.-H. Lin and U. Jahn and H. Küpers and E. Luna and R. B. Lewis and L. Geelhaar and O. Brandt }, title = { Efficient methodology to correlate structural with optical properties of GaAs nanowires based on scanning electron microscopy }, journal = { Nanotechnology }, volume = { 28 }, year = { 2017 }, pages = { 415703 } }

TY - JOUR AU - W.-H. Lin AU - U. Jahn AU - H. Küpers AU - E. Luna AU - R. B. Lewis AU - L. Geelhaar AU - O. Brandt TI - Efficient methodology to correlate structural with optical properties of GaAs nanowires based on scanning electron microscopy JF - Nanotechnology JA - Nanotechnology J1 - NAN VL - 28 SP - 415703 PY - 2017/09/13

Quantum dot self-assembly driven by a surfactant-induced morphological instability

@article{ author = { R. B. Lewis and P. Corfdir and H. Li and J. Herranz and C. Pfüller and O. Brandt and L. Geelhaar }, title = { Quantum dot self-assembly driven by a surfactant-induced morphological instability }, journal = { Physical Review Letters }, volume = { 119 }, year = { 2017 }, pages = { 086101 } }

TY - JOUR AU - R. B. Lewis AU - P. Corfdir AU - H. Li AU - J. Herranz AU - C. Pfüller AU - O. Brandt AU - L. Geelhaar TI - Quantum dot self-assembly driven by a surfactant-induced morphological instability JF - Physical Review Letters JA - Phys. Rev. Lett. J1 - PRL VL - 119 SP - 086101 PY - 2017/08/24

Fine structure of excitons in InAs quantum dots on GaAs(110) layers and nanowire facets

@article{ author = { P. Corfdir and R. B. Lewis and L. Geelhaar and O. Brandt }, title = { Fine structure of excitons in InAs quantum dots on GaAs(110) layers and nanowire facets }, journal = { Physical Review B: Solid State }, volume = { 96 }, year = { 2017 }, pages = { 045435 } }

TY - JOUR AU - P. Corfdir AU - R. B. Lewis AU - L. Geelhaar AU - O. Brandt TI - Fine structure of excitons in InAs quantum dots on GaAs(110) layers and nanowire facets JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 96 SP - 045435 PY - 2017/07/28

Ga-Polar (In,Ga)N/GaN Quantum Wells Versus N-Polar (In,Ga)N Quantum Disks in GaN Nanowires: A Comparative Analysis of Carrier Recombination, Diffusion, and Radiative Efficiency

@article{ author = { F. Feix and T. Flissikowski and K. K. Sabelfeld and V. M. Kaganer and M. Wölz and L. Geelhaar and H. T. Grahn and O. Brandt }, title = { Ga-Polar (In,Ga)N/GaN Quantum Wells Versus N-Polar (In,Ga)N Quantum Disks in GaN Nanowires: A Comparative Analysis of Carrier Recombination, Diffusion, and Radiative Efficiency }, journal = { Physical Review Applied }, volume = { 8 }, year = { 2017 }, pages = { 014032 } }

TY - JOUR AU - F. Feix AU - T. Flissikowski AU - K. K. Sabelfeld AU - V. M. Kaganer AU - M. Wölz AU - L. Geelhaar AU - H. T. Grahn AU - O. Brandt TI - Ga-Polar (In,Ga)N/GaN Quantum Wells Versus N-Polar (In,Ga)N Quantum Disks in GaN Nanowires: A Comparative Analysis of Carrier Recombination, Diffusion, and Radiative Efficiency JF - Physical Review Applied JA - Phys. Rev. Appl. J1 - VL - 8 SP - 014032 PY - 2017/07/27

Self-assembly of InAs nanostructures on the sidewalls of GaAs nanowires directed by a Bi surfactant

@article{ author = { R. B. Lewis and P. Corfdir and J. Herranz and H. Küpers and U. Jahn and O. Brandt and L. Geelhaar }, title = { Self-assembly of InAs nanostructures on the sidewalls of GaAs nanowires directed by a Bi surfactant }, journal = { Nano Letters }, volume = { 17 }, year = { 2017 }, pages = { 4255 } }

TY - JOUR AU - R. B. Lewis AU - P. Corfdir AU - J. Herranz AU - H. Küpers AU - U. Jahn AU - O. Brandt AU - L. Geelhaar TI - Self-assembly of InAs nanostructures on the sidewalls of GaAs nanowires directed by a Bi surfactant JF - Nano Letters JA - Nano Lett. J1 - VL - 17 SP - 4255 PY - 2017/06/27