Nanofabrication

Dr. Lutz Geelhaar

Head of Department Epitaxy

Lutz Geelhaar

Telefon: +49 30 20377 359

Raum: 0714

Email: geelhaar@pdi-berlin.de

 

Abteilung: Epitaxy

Core research areas: Nanofabrication , III-V nanowires for optoelectronics

 

 

41 Autor A. Al Hassan , R. B. Lewis , H. Küpers , W. H. Lin , D. Bahrami , T. Krause , D. Salomon , A. Tahraoui , M. Hanke , L. Geelhaar , U. Pietsch
Titel

Nano x-ray fluorescence of individual GaAs/InGaAs core-shell nanowires

Source Phys. Rev. Mater. , 2 , 014604 ( 2018 )
DOI : 10.1103/PhysRevMaterials.2.014604 | 3040 Cite : Bibtex RIS
A. Al Hassan, R. B. Lewis, H. Küpers, W. H. Lin, D. Bahrami, T. Krause, D. Salomon, A. Tahraoui, M. Hanke, L. Geelhaar, and U. Pietsch

42 Autor D. van Treeck , G. Calabrese , J. Goertz , V. M. Kaganer , O. Brandt , S. Fernández-Garrido , L. Geelhaar
Titel

Self-Assembled Formation of Long, Thin, and Uncoalesced GaN Nanowires on Crystalline TiN Films

Source Nano Res. , 11, Issue 1 , 565 ( 2018 )
DOI : 10.1007/s12274-017-1717-x | 2901 Cite : Bibtex RIS
D. van Treeck, G. Calabrese, J. Goertz, V. M. Kaganer, O. Brandt, S. Fernández-Garrido, and L. Geelhaar

43 Autor H. Küpers , A. Tahraoui , R. B. Lewis , S. Rauwerdink , M. Matalla , O. Krüger , F. Bastiman , H. Riechert , L. Geelhaar
Titel

Surface preparation and patterning by nano imprint lithography for the selective area growth of GaAs nanowires on Si(111)

Source Semicond. Sci. Technol. , 32 , 115003 ( 2017 )
DOI : 10.1088/1361-6641/aa8c15 | arxiv: 1708.02454 | 2943 Cite : Bibtex RIS
H. Küpers, A. Tahraoui, R. B. Lewis, S. Rauwerdink, M. Matalla, O. Krüger, F. Bastiman, H. Riechert, and L. Geelhaar

44 Autor G. Calabrese , S. V. Pettersen , C. Pfüller , M. Ramsteiner , J. Grepstad , O. Brandt , L. Geelhaar , S. Fernández-Garrido
Titel

Effect of substrate roughness, chemical composition, and native oxide crystallinity on the orientation of self-assembled GaN nanowires on Ti foils

Source Nanotechnology , 28 , 425602 ( 2017 )
DOI : 10.1088/1361-6528/aa84a1 | 2935 Cite : Bibtex RIS
G. Calabrese, S. V. Pettersen, C. Pfüller, M. Ramsteiner, J. Grepstad, O. Brandt, L. Geelhaar, and S. Fernández-Garrido

45 Autor S. Fernández-Garrido , M. Ramsteiner , G. Gao , L. A. Galves , Bharat Sharma , P. Corfdir , G. Calabrese , Z. de Souza Schiaber , C. Pfüller , A. Trampert , J. M. J. Lopes , O. Brandt , L. Geelhaar
Titel

Molecular Beam Epitaxy of GaN Nanowires on Epitaxial Graphene

Source Nano Lett. , 17 , 5213 ( 2017 )
DOI : 10.1021/acs.nanolett.7b01196 | 2906 Cite : Bibtex RIS
S. Fernández-Garrido, M. Ramsteiner, G. Gao, L. A. Galves, Bharat Sharma, P. Corfdir, G. Calabrese, Z. de Souza Schiaber, C. Pfüller, A. Trampert, J. M. J. Lopes, O. Brandt, and L. Geelhaar

46 Autor W.-H. Lin , U. Jahn , H. Küpers , E. Luna , R. B. Lewis , L. Geelhaar , O. Brandt
Titel

Efficient methodology to correlate structural with optical properties of GaAs nanowires based on scanning electron microscopy

Source Nanotechnology , 28 , 415703 ( 2017 )
DOI : 10.1088/1361-6528/aa8394 | 2917 Cite : Bibtex RIS
W.-H. Lin, U. Jahn, H. Küpers, E. Luna, R. B. Lewis, L. Geelhaar, and O. Brandt

47 Autor R. B. Lewis , P. Corfdir , H. Li , J. Herranz , C. Pfüller , O. Brandt , L. Geelhaar
Titel

Quantum dot self-assembly driven by a surfactant-induced morphological instability

Source Phys. Rev. Lett. , 119 , 086101 ( 2017 )
DOI : 10.1103/PhysRevLett.119.086101 | Download: PDF | 2903 Cite : Bibtex RIS
R. B. Lewis, P. Corfdir, H. Li, J. Herranz, C. Pfüller, O. Brandt, and L. Geelhaar

48 Autor P. Corfdir , R. B. Lewis , L. Geelhaar , O. Brandt
Titel

Fine structure of excitons in InAs quantum dots on GaAs(110) layers and nanowire facets

Source Phys. Rev. B , 96 , 045435 ( 2017 )
DOI : 10.1103/PhysRevB.96.045435 | Download: PDF | 2924 Cite : Bibtex RIS
P. Corfdir, R. B. Lewis, L. Geelhaar, and O. Brandt

49 Autor F. Feix , T. Flissikowski , K. K. Sabelfeld , V. M. Kaganer , M. Wölz , L. Geelhaar , H. T. Grahn , O. Brandt
Titel

Ga-Polar (In,Ga)N/GaN Quantum Wells Versus N-Polar (In,Ga)N Quantum Disks in GaN Nanowires: A Comparative Analysis of Carrier Recombination, Diffusion, and Radiative Efficiency

Source Phys. Rev. Appl. , 8 , 014032 ( 2017 )
DOI : 10.1103/PhysRevApplied.8.014032 | arxiv: 1703.06715 | 2905 Cite : Bibtex RIS
F. Feix, T. Flissikowski, K. K. Sabelfeld, V. M. Kaganer, M. Wölz, L. Geelhaar, H. T. Grahn, and O. Brandt

50 Autor R. B. Lewis , P. Corfdir , J. Herranz , H. Küpers , U. Jahn , O. Brandt , L. Geelhaar
Titel

Self-assembly of InAs nanostructures on the sidewalls of GaAs nanowires directed by a Bi surfactant

Source Nano Lett. , 17 , 4255 ( 2017 )
DOI : 10.1021/acs.nanolett.7b01185 | arxiv: 1704.08014 | 2910 Cite : Bibtex RIS
R. B. Lewis, P. Corfdir, J. Herranz, H. Küpers, U. Jahn, O. Brandt, and L. Geelhaar