Nanofabrication

Dr. Lutz Geelhaar

Head of Department Epitaxy

Lutz Geelhaar

Telefon: +49 30 20377 359

Raum: 0714

Email: geelhaar@pdi-berlin.de

 

Abteilung: Epitaxy

Core research areas: Nanofabrication , III-V nanowires for optoelectronics

 

 

71 Autor J. K. Zettler , P. Corfdir , C. Hauswald , E. Luna , U. Jahn , T. Flissikowski , E. Schmidt , C. Ronning , A. Trampert , L. Geelhaar , H. T. Grahn , O. Brandt , S. Fernández-Garrido
Titel

Observation of dielectrically confined excitons in ultrathin GaN nanowires up to room temperature

Source Nano Lett. , 16 , 973 ( 2016 )
DOI : 10.1021/acs.nanolett.5b03931 | 2739 Cite : Bibtex RIS
J. K. Zettler, P. Corfdir, C. Hauswald, E. Luna, U. Jahn, T. Flissikowski, E. Schmidt, C. Ronning, A. Trampert, L. Geelhaar, H. T. Grahn, O. Brandt, and S. Fernández-Garrido

72 Autor F. Bastiman , H. Küpers , C. Somaschini , L. Geelhaar
Titel

Growth map for Ga-assisted growth of GaAs nanowires on Si(111) substrates by molecular beam epitaxy

Source Nanotechnology , 27 , 095601 ( 2016 )
DOI : 10.1088/0957-4484/27/9/095601 | 2691 Cite : Bibtex RIS
F. Bastiman, H. Küpers, C. Somaschini, and L. Geelhaar

73 Autor M. Musolino , D. van Treeck , A. Tahraoui , L. Scarparo , C. De Santi , M. Meneghini , E. Zanoni , L. Geelhaar , H. Riechert
Titel

A physical model for the reverse leakage current in (In,Ga)N/GaN light-emitting diodes based on nanowires

Source J. Appl. Phys. , 119 , 044502 ( 2016 )
DOI : 10.1063/1.4940949 | Download: PDF | 2760 Cite : Bibtex RIS
M. Musolino, D. van Treeck, A. Tahraoui, L. Scarparo, C. De Santi, M. Meneghini, E. Zanoni, L. Geelhaar, and H. Riechert

74 Autor J. Lähnemann , P. Corfdir , F. Feix , J. Kamimura , T. Flissikowski , H. T. Grahn , L. Geelhaar , O. Brandt
Titel

Radial Stark effect in (In,Ga)N nanowires

Source Nano Lett. , 16 , 917 ( 2016 )
DOI : 10.1021/acs.nanolett.5b03748 | arxiv: 1601.07201 | 2744 Cite : Bibtex RIS
J. Lähnemann, P. Corfdir, F. Feix, J. Kamimura, T. Flissikowski, H. T. Grahn, L. Geelhaar, and O. Brandt

75 Autor J. K. Zettler , P. Corfdir , L. Geelhaar , H. Riechert , O. Brandt , S. Fernández-Garrido
Titel

Improved control over spontaneously formed GaN nanowires in molecular beam epitaxy using a two-step growth process

Source Nanotechnology , 26 , 445604 ( 2015 )
DOI : 10.1088/0957-4484/26/44/445604 | arxiv: 1508.06266 | 2712 Cite : Bibtex RIS
J. K. Zettler, P. Corfdir, L. Geelhaar, H. Riechert, O. Brandt, and S. Fernández-Garrido

76 Autor O. Marquardt , L. Geelhaar , O. Brandt
Titel

Impact of individual dopants on the electronic properties of axial (In,Ga)N/GaN nanowire heterostructures

Source IEEE , IEEE Catalog Nr. CFP15817-PRT , 113 ( 2015 )
DOI : ISBN 978-1-4799-8378-0 | 2714 Cite : Bibtex RIS
O. Marquardt, L. Geelhaar, and O. Brandt

77 Autor T. Schumann , J. M. J. Lopes , J. M. Wofford , M.H. Oliveira Jr. , M. Dubslaff , M. Hanke , U. Jahn , L. Geelhaar , H. Riechert
Titel

The impact of substrate selection for the controlled growth of graphene by molecular beam epitaxy

Source J. Cryst. Growth , 425 , 274 ( 2015 )
DOI : 10.1016/j.jcrysgro.2015.02.060 | 2670 Cite : Bibtex RIS
T. Schumann, J. M. J. Lopes, J. M. Wofford, M.H. Oliveira Jr., M. Dubslaff, M. Hanke, U. Jahn, L. Geelhaar, and H. Riechert

78 Autor H. Li , L. Geelhaar , H. Riechert , C. Draxl
Titel

Computing Equilibrium Shapes of Wurtzite Crystals: The Example of GaN

Source Phys. Rev. Lett. , 115 , 085503 ( 2015 )
DOI : 10.1103/PhysRevLett.115.085503 | Download: PDF | 2651 Cite : Bibtex RIS
H. Li, L. Geelhaar, H. Riechert, and C. Draxl

79 Autor J. K. Zettler , C. Hauswald , P. Corfdir , M. Musolino , L. Geelhaar , H. Riechert , O. Brandt , S. Fernández-Garrido
Titel

High-temperature growth of GaN nanowires by molecular beam epitaxy: toward the material quality of bulk GaN

Source Cryst. Growth Des. , 15 , 4104 ( 2015 )
DOI : 10.1021/acs.cgd.5b00690 | 2697 Cite : Bibtex RIS
J. K. Zettler, C. Hauswald, P. Corfdir, M. Musolino, L. Geelhaar, H. Riechert, O. Brandt, and S. Fernández-Garrido

80 Autor O. Marquardt , L. Geelhaar , O. Brandt
Titel

Impact of random dopant fluctuations on the electronic properties of InxGa1-xN/GaN axial nanowire heterostructures

Source Nano Lett. , 15 , 4289 ( 2015 )
DOI : 10.1021/acs.nanolett.5b00101 | 2678 Cite : Bibtex RIS
O. Marquardt, L. Geelhaar, and O. Brandt