Nanofabrication

Dr. Abbes Tahraoui

Senior Scientist

Head of Technology

Abbes Tahraoui

Telefon: +49 30 20377 414

Raum: 0633

Email: tahraoui@pdi-berlin.de

 

Abteilung: Technology and Transfer

 

 

11 Autor S. Fernández-Garrido , T. Auzelle , J. Lähnemann , K. Wimmer , A. Tahraoui , O. Brandt
Titel

Top-down fabrication of ordered arrays of GaN nanowires by selective area sublimation

Source Nanoscale Adv. , 1 , 1893 ( 2019 )
DOI : 10.1039/c8na00369f | arxiv: 1905.04948 | 3045 Cite : Bibtex RIS
S. Fernández-Garrido, T. Auzelle, J. Lähnemann, K. Wimmer, A. Tahraoui, and O. Brandt

12 Autor H. Küpers , P. Corfdir , R. B. Lewis , T. Flissikowski , A. Tahraoui , H. T. Grahn , O. Brandt , L. Geelhaar
Titel

Impact of outer shell structure and localization effects on charge carrier dynamics in GaAs/(In,Ga)As nanowire core-shell quantum wells

Source Phys. Status Solidi-Rapid Res. Lett. , 13 , 1800527 ( 2019 )
DOI : 10.1002/pssr.201800527 | 3033 Cite : Bibtex RIS
H. Küpers, P. Corfdir, R. B. Lewis, T. Flissikowski, A. Tahraoui, H. T. Grahn, O. Brandt, and L. Geelhaar

13 Autor L. Hüttenhofer , R. B. Lewis , S. Rauwerdink , A. Tahraoui , H. Küpers , L. Geelhaar , O. Marquardt , S. Ludwig
Titel

Optimization of ohmic contacts to n-type GaAs nanowires

Source Phys. Rev. Appl. , 10 , 034024 ( 2018 )
DOI : 10.1103/PhysRevApplied.10.034024 | arxiv: 1711.08284 | 2988 Cite : Bibtex RIS
L. Hüttenhofer, R. B. Lewis, S. Rauwerdink, A. Tahraoui, H. Küpers, L. Geelhaar, O. Marquardt, and S. Ludwig

14 Autor H. Küpers , R. B. Lewis , A. Tahraoui , M. Matalla , O. Krüger , F. Bastiman , H. Riechert , L. Geelhaar
Titel

The diameter evolution of selective area grown Ga-assisted GaAs nanowires in molecular beam epitaxy

Source Nano Res. , 11 , 2885 ( 2018 )
DOI : 10.1007/s12274-018-1984-1 | 2956 Cite : Bibtex RIS
H. Küpers, R. B. Lewis, A. Tahraoui, M. Matalla, O. Krüger, F. Bastiman, H. Riechert, and L. Geelhaar

15 Autor A. Al Hassan , R. B. Lewis , H. Küpers , W. H. Lin , D. Bahrami , T. Krause , D. Salomon , A. Tahraoui , M. Hanke , L. Geelhaar , U. Pietsch
Titel

Nano x-ray fluorescence of individual GaAs/InGaAs core-shell nanowires

Source Phys. Rev. Mater. , 2 , 014604 ( 2018 )
DOI : 10.1103/PhysRevMaterials.2.014604 | 3040 Cite : Bibtex RIS
A. Al Hassan, R. B. Lewis, H. Küpers, W. H. Lin, D. Bahrami, T. Krause, D. Salomon, A. Tahraoui, M. Hanke, L. Geelhaar, and U. Pietsch

16 Autor M. Yuan , C. Hubert , S. Rauwerdink , A. Tahraoui , B von Someren , K. Biermann , P. V. Santos
Titel

Generation of surface acoustic waves on doped semiconductor substrates

Source J. Phys. D: Appl. Phys. , 50 , 484004 ( 2017 )
DOI : 10.1088/1361-6463/aa92a5 | 2944 Cite : Bibtex RIS
M. Yuan, C. Hubert, S. Rauwerdink, A. Tahraoui, B von Someren, K. Biermann, and P. V. Santos

17 Autor Y.-T. Liou , A. Hernández-Mínguez , J. Herfort , J. M. J. Lopes , A. Tahraoui , P. V. Santos
Titel

Acousto-electric transport in MgO/ZnO-covered graphene on SiC

Source J. Phys. D: Appl. Phys. , 50 , 464008 ( 2017 )
DOI : 10.1088/1361-6463/aa8e8a | arxiv: 1708.05236 | 2954 Cite : Bibtex RIS
Y.-T. Liou, A. Hernández-Mínguez, J. Herfort, J. M. J. Lopes, A. Tahraoui, and P. V. Santos

18 Autor H. Küpers , A. Tahraoui , R. B. Lewis , S. Rauwerdink , M. Matalla , O. Krüger , F. Bastiman , H. Riechert , L. Geelhaar
Titel

Surface preparation and patterning by nano imprint lithography for the selective area growth of GaAs nanowires on Si(111)

Source Semicond. Sci. Technol. , 32 , 115003 ( 2017 )
DOI : 10.1088/1361-6641/aa8c15 | arxiv: 1708.02454 | 2943 Cite : Bibtex RIS
H. Küpers, A. Tahraoui, R. B. Lewis, S. Rauwerdink, M. Matalla, O. Krüger, F. Bastiman, H. Riechert, and L. Geelhaar

19 Autor A. Davtyan , T. Krause , D. Kriegner , A. Al-Hassan , D. Bahrami , S. M. M. Kashani , R. B. Lewis , H. Küpers , A. Tahraoui , L. Geelhaar , M. Hanke , S. J. Leake , O. Loffeld , U. Pietsch
Titel

Threefold rotational symmetry in hexagonally shaped core–shell (In,Ga)As/GaAs nanowires revealed by coherent X-ray diffraction imaging

Source J. Appl. Cryst. , 50 , 673 ( 2017 )
DOI : 10.1107/S1600576717004149 | 2927 Cite : Bibtex RIS
A. Davtyan, T. Krause, D. Kriegner, A. Al-Hassan, D. Bahrami, S. M. M. Kashani, R. B. Lewis, H. Küpers, A. Tahraoui, L. Geelhaar, M. Hanke, S. J. Leake, O. Loffeld, and U. Pietsch

20 Autor M. Musolino , A. Tahraoui , L. Geelhaar , F. Sacconi , F. Panetta , C. De Santi , M. Meneghini , E. Zanoni
Titel

The effect of the three-dimensional strain variation on the emission properties of light-emitting diodes based on (In,Ga)N/GaN nanowires

Source Phys. Rev. Appl. , 7 , 044014 ( 2017 )
DOI : 10.1103/PhysRevApplied.7.044014 | arxiv: 1704.01569 | 2888 Cite : Bibtex RIS
M. Musolino, A. Tahraoui, L. Geelhaar, F. Sacconi, F. Panetta, C. De Santi, M. Meneghini, and E. Zanoni