Synergistic effect of H2O and O2 on the decoupling of epitaxial monolayer graphene from SiC(0001) via thermal treatments

@article{ author = { N. M. Bom and M.H. Oliveira Jr. and G.V. Soares and C. Radtke and J. M. J. Lopes and H. Riechert }, title = { Synergistic effect of H2O and O2 on the decoupling of epitaxial monolayer graphene from SiC(0001) via thermal treatments }, journal = { Carbon }, volume = { 78 }, year = { 2014 }, pages = { 298 } }

TY - JOUR AU - N. M. Bom AU - M.H. Oliveira Jr. AU - G.V. Soares AU - C. Radtke AU - J. M. J. Lopes AU - H. Riechert TI - Synergistic effect of H2O and O2 on the decoupling of epitaxial monolayer graphene from SiC(0001) via thermal treatments JF - Carbon JA - Carbon J1 - VL - 78 SP - 298 PY - 2014/07/11

The effect of the buffer layer coupling on the lattice parameter of epitaxial graphene on SiC(0001)

@article{ author = { T. Schumann and M. Dubslaff and M. H. Oliveira Jr. and M. Hanke and J. M. J. Lopes and H. Riechert }, title = { The effect of the buffer layer coupling on the lattice parameter of epitaxial graphene on SiC(0001) }, journal = { Physical Review B: Solid State }, volume = { 90 }, year = { 2014 }, pages = { 041403(R) } }

TY - JOUR AU - T. Schumann AU - M. Dubslaff AU - M. H. Oliveira Jr. AU - M. Hanke AU - J. M. J. Lopes AU - H. Riechert TI - The effect of the buffer layer coupling on the lattice parameter of epitaxial graphene on SiC(0001) JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 90 SP - 041403(R) PY - 2014/07/08

Structural investigation of nanocrystalline graphene grown on (6 sqrt 3 times 6 sqrt 3)R30°-reconstructed SiC surfaces by molecular beam epitaxy

@article{ author = { T. Schumann and M. Dubslaff and M. H. Oliveira, Jr. and M. Hanke and F. Fromm and T. Seyller and L. Nemec and V. Blum and M. Scheffler and J. M. J. Lopes and H. Riechert }, title = { Structural investigation of nanocrystalline graphene grown on (6 sqrt 3 times 6 sqrt 3)R30°-reconstructed SiC surfaces by molecular beam epitaxy }, journal = { New Journal Physics }, volume = { 15 }, year = { 2013 }, pages = { 123034 } }

TY - JOUR AU - T. Schumann AU - M. Dubslaff AU - M. H. Oliveira, Jr. AU - M. Hanke AU - F. Fromm AU - T. Seyller AU - L. Nemec AU - V. Blum AU - M. Scheffler AU - J. M. J. Lopes AU - H. Riechert TI - Structural investigation of nanocrystalline graphene grown on (6 sqrt 3 times 6 sqrt 3)R30°-reconstructed SiC surfaces by molecular beam epitaxy JF - New Journal Physics JA - New J. Phys. J1 - VL - 15 SP - 123034 PY - 2013/12/20

Formation of high-quality quasi-free-standing bilayer graphene on SiC(0001) by oxygen intercalation upon annealing in air

@article{ author = { M. H. Oliveira Jr. and T. Schumann and F. Fromm and R. Koch and M. Ostler and M. Ramsteiner and T. Seyller and J. M. J. Lopes and H. Riechert }, title = { Formation of high-quality quasi-free-standing bilayer graphene on SiC(0001) by oxygen intercalation upon annealing in air }, journal = { Carbon }, volume = { 52 }, year = { 2013 }, pages = { 83 } }

TY - JOUR AU - M. H. Oliveira Jr. AU - T. Schumann AU - F. Fromm AU - R. Koch AU - M. Ostler AU - M. Ramsteiner AU - T. Seyller AU - J. M. J. Lopes AU - H. Riechert TI - Formation of high-quality quasi-free-standing bilayer graphene on SiC(0001) by oxygen intercalation upon annealing in air JF - Carbon JA - Carbon J1 - VL - 52 SP - 83 PY - 2013/01/01

Mono- and few-layer nanocrystalline graphene grown on Al₂O₃(0001) by molecular beam epitaxy

@article{ author = { M. H. Oliveira Jr. and T. Schumann and R. Gargallo-Caballero and F. Fromm and T. Seyller and M. Ramsteiner and A. Trampert and L. Geelhaar and J. M. J. Lopes and H. Riechert }, title = { Mono- and few-layer nanocrystalline graphene grown on Al₂O₃(0001) by molecular beam epitaxy }, journal = { Carbon }, volume = { 56 }, year = { 2013 }, pages = { 339 } }

TY - JOUR AU - M. H. Oliveira Jr. AU - T. Schumann AU - R. Gargallo-Caballero AU - F. Fromm AU - T. Seyller AU - M. Ramsteiner AU - A. Trampert AU - L. Geelhaar AU - J. M. J. Lopes AU - H. Riechert TI - Mono- and few-layer nanocrystalline graphene grown on Al₂O₃(0001) by molecular beam epitaxy JF - Carbon JA - Carbon J1 - VL - 56 SP - 339 PY - 2013/01/01

Contribution of the buffer layer to the Raman spectrum of epitaxial graphene on SiC(0001)

@article{ author = { F. Fromm and M. H. Oliveira Jr. and A. Molina-Sanchez and M. Hundhausen and J. M. J. Lopes and H. Riechert and L. Wirtz and T. Seyller }, title = { Contribution of the buffer layer to the Raman spectrum of epitaxial graphene on SiC(0001) }, journal = { New Journal Physics }, volume = { 15 }, year = { 2013 }, pages = { 043031 } }

TY - JOUR AU - F. Fromm AU - M. H. Oliveira Jr. AU - A. Molina-Sanchez AU - M. Hundhausen AU - J. M. J. Lopes AU - H. Riechert AU - L. Wirtz AU - T. Seyller TI - Contribution of the buffer layer to the Raman spectrum of epitaxial graphene on SiC(0001) JF - New Journal Physics JA - New J. Phys. J1 - VL - 15 SP - 043031 PY - 2013/01/01

Acousto-electric transport in epitaxial monolayer graphene on SiC

@article{ author = { P. V. Santos and T. Schumann and M. H. Oliveira Jr. and J. M. J. Lopes and H. Riechert }, title = { Acousto-electric transport in epitaxial monolayer graphene on SiC }, journal = { Applied Physics Letters }, volume = { 102 }, year = { 2013 }, pages = { 221907 } }

TY - JOUR AU - P. V. Santos AU - T. Schumann AU - M. H. Oliveira Jr. AU - J. M. J. Lopes AU - H. Riechert TI - Acousto-electric transport in epitaxial monolayer graphene on SiC JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 102 SP - 221907 PY - 2013/01/01

Admittance spectroscopy of Si/LaLuO₃ and Si/GdSiO MOS structures

@article{ author = { F. Ducroquet and O. Engström and H. D. B. Gottlob and J. M. J. Lopes and J. Schubert }, title = { Admittance spectroscopy of Si/LaLuO₃ and Si/GdSiO MOS structures }, journal = { ECS Transactions }, volume = { 45 }, year = { 2012 }, pages = { 103 } }

TY - JOUR AU - F. Ducroquet AU - O. Engström AU - H. D. B. Gottlob AU - J. M. J. Lopes AU - J. Schubert TI - Admittance spectroscopy of Si/LaLuO₃ and Si/GdSiO MOS structures JF - ECS Transactions JA - ECS Trans. J1 - VL - 45 SP - 103 PY - 2012/01/01

Anisotropic quantum Hall effect in epitaxial graphene on stepped SiC surfaces

@article{ author = { T. Schumann and K.-J. Friedland and M. H. Oliveira Jr. and A. Tahraoui and J. M. J. Lopes and H. Riechert }, title = { Anisotropic quantum Hall effect in epitaxial graphene on stepped SiC surfaces }, journal = { Physical Review B: Solid State }, volume = { 85 }, year = { 2012 }, pages = { 235402 } }

TY - JOUR AU - T. Schumann AU - K.-J. Friedland AU - M. H. Oliveira Jr. AU - A. Tahraoui AU - J. M. J. Lopes AU - H. Riechert TI - Anisotropic quantum Hall effect in epitaxial graphene on stepped SiC surfaces JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 85 SP - 235402 PY - 2012/01/01

Electrical and structural properties of ternary rare-earth oxides on Si and higher mobility substrates and their integration as high-k gate dielectrics in MOSFET devices

@article{ author = { J. M. J. Lopes and E. Durvgun Özben and M. Schnee and R. Luptak and A. Nichau and A. Tiedemann and W. Yu and Q. T. Zhao and A. Besmehn and U. Breuer and M. Luysberg and St. Lenk and J. Schubert and S. Mantl }, title = { Electrical and structural properties of ternary rare-earth oxides on Si and higher mobility substrates and their integration as high-k gate dielectrics in MOSFET devices }, journal = { ECS Transactions }, volume = { 35 }, year = { 2011 }, pages = { 461 } }

TY - JOUR AU - J. M. J. Lopes AU - E. Durvgun Özben AU - M. Schnee AU - R. Luptak AU - A. Nichau AU - A. Tiedemann AU - W. Yu AU - Q. T. Zhao AU - A. Besmehn AU - U. Breuer AU - M. Luysberg AU - St. Lenk AU - J. Schubert AU - S. Mantl TI - Electrical and structural properties of ternary rare-earth oxides on Si and higher mobility substrates and their integration as high-k gate dielectrics in MOSFET devices JF - ECS Transactions JA - ECS Trans. J1 - VL - 35 SP - 461 PY - 2011/01/01