Metal-exchange catalysis in the growth of sesquioxides: towards heterostructures of transparent oxide semiconductors

@article{ author = { P. Vogt and O. Brandt and H. Riechert and J. Lähnemann and O. Bierwagen }, title = { Metal-exchange catalysis in the growth of sesquioxides: towards heterostructures of transparent oxide semiconductors }, journal = { Physical Review Letters }, volume = { 119 }, year = { 2017 }, pages = { 196001 } }

TY - JOUR AU - P. Vogt AU - O. Brandt AU - H. Riechert AU - J. Lähnemann AU - O. Bierwagen TI - Metal-exchange catalysis in the growth of sesquioxides: towards heterostructures of transparent oxide semiconductors JF - Physical Review Letters JA - Phys. Rev. Lett. J1 - PRL VL - 119 SP - 196001 PY - 2017/11/07

Phase formation and strain relaxation of Ga2O3 on various sapphire orientations as studied by synchrotron-based x-ray diffraction

@article{ author = { Z. Cheng and M. Hanke and P. Vogt and O. Bierwagen and A. Trampert }, title = { Phase formation and strain relaxation of Ga2O3 on various sapphire orientations as studied by synchrotron-based x-ray diffraction }, journal = { Applied Physics Letters }, volume = { 111 }, year = { 2017 }, pages = { 162104 } }

TY - JOUR AU - Z. Cheng AU - M. Hanke AU - P. Vogt AU - O. Bierwagen AU - A. Trampert TI - Phase formation and strain relaxation of Ga2O3 on various sapphire orientations as studied by synchrotron-based x-ray diffraction JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 111 SP - 162104 PY - 2017/10/16

Growth of GaP and AlGaP on GaP(111)B using gas-source molecular-beam epitaxy

@article{ author = { J.-B. Barakat and S. Dadgostar and K. Hestroffer and O. Bierwagen and A. Trampert and F. Hatami }, title = { Growth of GaP and AlGaP on GaP(111)B using gas-source molecular-beam epitaxy }, journal = { Journal of Crystal Growth }, volume = { tbd }, year = { 2017 }, pages = { tbd } }

TY - JOUR AU - J.-B. Barakat AU - S. Dadgostar AU - K. Hestroffer AU - O. Bierwagen AU - A. Trampert AU - F. Hatami TI - Growth of GaP and AlGaP on GaP(111)B using gas-source molecular-beam epitaxy JF - Journal of Crystal Growth JA - J. Cryst. Growth J1 - JGC VL - tbd SP - tbd PY - 2017/02/22

Consequences of plasma oxidation and vacuum annealing on the chemical properties and electron accumulation of In2O3 surfaces

@article{ author = { T. Berthold and J. Rombach and T. Stauden and V. Polyakov and V. Cimalla and S. Krischok and O. Bierwagen and M. Himmerlich }, title = { Consequences of plasma oxidation and vacuum annealing on the chemical properties and electron accumulation of In2O3 surfaces }, journal = { Journal of Applied Physics }, volume = { 120 }, year = { 2016 }, pages = { 245301 } }

TY - JOUR AU - T. Berthold AU - J. Rombach AU - T. Stauden AU - V. Polyakov AU - V. Cimalla AU - S. Krischok AU - O. Bierwagen AU - M. Himmerlich TI - Consequences of plasma oxidation and vacuum annealing on the chemical properties and electron accumulation of In2O3 surfaces JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 120 SP - 245301 PY - 2016/12/22

Photoelectron spectroscopic study of electronic state and surface structure of In2O3 single crystals

@article{ author = { T. Nagata and O. Bierwagen and Z. Galazka and M. Imura and S. Ueda and H. Yoshikawa and Y. Yamashita and T. Chikyow }, title = { Photoelectron spectroscopic study of electronic state and surface structure of In2O3 single crystals }, journal = { Applied Physics Express }, volume = { 10 }, year = { 2016 }, pages = { 011102 } }

TY - JOUR AU - T. Nagata AU - O. Bierwagen AU - Z. Galazka AU - M. Imura AU - S. Ueda AU - H. Yoshikawa AU - Y. Yamashita AU - T. Chikyow TI - Photoelectron spectroscopic study of electronic state and surface structure of In2O3 single crystals JF - Applied Physics Express JA - Appl. Phys. Express J1 - VL - 10 SP - 011102 PY - 2016/12/13

Defect compensation by Cr vacancies and oxygen interstitials in Ti4+-doped Cr2O3 epitaxial thin films

@article{ author = { T. C. Kaspar and P. V. Sushko and M. E. Bowden and S. M. Heald and A. Papadogianni and C. Tschammer and O. Bierwagen and S. A. Chambers }, title = { Defect compensation by Cr vacancies and oxygen interstitials in Ti4+-doped Cr2O3 epitaxial thin films }, journal = { Physical Review B: Solid State }, volume = { 94 }, year = { 2016 }, pages = { 155409 } }

TY - JOUR AU - T. C. Kaspar AU - P. V. Sushko AU - M. E. Bowden AU - S. M. Heald AU - A. Papadogianni AU - C. Tschammer AU - O. Bierwagen AU - S. A. Chambers TI - Defect compensation by Cr vacancies and oxygen interstitials in Ti4+-doped Cr2O3 epitaxial thin films JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 94 SP - 155409 PY - 2016/10/07

Kinetics versus thermodynamics of the metal incorporation in molecular beam epitaxy of (InxGa1-x)2O3

@article{ author = { P. Vogt and O. Bierwagen }, title = { Kinetics versus thermodynamics of the metal incorporation in molecular beam epitaxy of (InxGa1-x)2O3 }, journal = { APL Materials }, volume = { 4 }, year = { 2016 }, pages = { 086112 } }

TY - JOUR AU - P. Vogt AU - O. Bierwagen TI - Kinetics versus thermodynamics of the metal incorporation in molecular beam epitaxy of (InxGa1-x)2O3 JF - APL Materials JA - APL Mater. J1 - APLM VL - 4 SP - 086112 PY - 2016/08/23

Comparison of the growth kinetics of In2O3 and Ga2O3 and their suboxide desorption during plasma-assisted molecular beam epitaxy

@article{ author = { P. Vogt and O. Bierwagen }, title = { Comparison of the growth kinetics of In2O3 and Ga2O3 and their suboxide desorption during plasma-assisted molecular beam epitaxy }, journal = { Applied Physics Letters }, volume = { 109 }, year = { 2016 }, pages = { 062103 } }

TY - JOUR AU - P. Vogt AU - O. Bierwagen TI - Comparison of the growth kinetics of In2O3 and Ga2O3 and their suboxide desorption during plasma-assisted molecular beam epitaxy JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 109 SP - 062103 PY - 2016/08/08

The role of surface electron accumulation and bulk doping for gas-sensing explored with single-crystalline In2O3 thin films

@article{ author = { J. Rombach and A. Papadogianni and M. Mischo and V. Cimalla and L. Kirste and O. Ambacher and T. Berthold and S. Krischok and M. Himmerlich and Sören Selve and O. Bierwagen }, title = { The role of surface electron accumulation and bulk doping for gas-sensing explored with single-crystalline In2O3 thin films }, journal = { Sensors & Actuators B }, volume = { 236 }, year = { 2016 }, pages = { 909 } }

TY - JOUR AU - J. Rombach AU - A. Papadogianni AU - M. Mischo AU - V. Cimalla AU - L. Kirste AU - O. Ambacher AU - T. Berthold AU - S. Krischok AU - M. Himmerlich AU - Sören Selve AU - O. Bierwagen TI - The role of surface electron accumulation and bulk doping for gas-sensing explored with single-crystalline In2O3 thin films JF - Sensors & Actuators B JA - Sens. Actuators B Chem. J1 - VL - 236 SP - 909 PY - 2016/03/18

Influence of dopant species and concentration on grain boundary scattering in degenerately doped In2O3 thin films

@article{ author = { M.V. Frischbier and H.F. Wardenga and M. Weidner and O. Bierwagen and J. Jia and Y. Shigesato and A. Klein }, title = { Influence of dopant species and concentration on grain boundary scattering in degenerately doped In2O3 thin films }, journal = { Thin Solid Films }, volume = { 614 }, year = { 2016 }, pages = { 62 } }

TY - JOUR AU - M.V. Frischbier AU - H.F. Wardenga AU - M. Weidner AU - O. Bierwagen AU - J. Jia AU - Y. Shigesato AU - A. Klein TI - Influence of dopant species and concentration on grain boundary scattering in degenerately doped In2O3 thin films JF - Thin Solid Films JA - Thin Solid Films J1 - TSF VL - 614 SP - 62 PY - 2016/03/11