Interface recombination in Ga- and N-polar GaN/(Al,Ga)N quantum wells grown by molecular beam epitaxy

@article{ author = { T. Auzelle and C. Sinito and J. Lähnemann and G. Gao and T. Flissikowski and A. Trampert and O. Brandt and S. Fernández-Garrido }, title = { Interface recombination in Ga- and N-polar GaN/(Al,Ga)N quantum wells grown by molecular beam epitaxy }, journal = { Physical Review Applied }, volume = { 17 }, year = { 2022 }, pages = { 4 } }

TY - JOUR AU - T. Auzelle AU - C. Sinito AU - J. Lähnemann AU - G. Gao AU - T. Flissikowski AU - A. Trampert AU - O. Brandt AU - S. Fernández-Garrido TI - Interface recombination in Ga- and N-polar GaN/(Al,Ga)N quantum wells grown by molecular beam epitaxy JF - Physical Review Applied JA - Phys. Rev. Appl. J1 - VL - 17 SP - 4 PY - 2022/04/15

Carrier diffusion in GaN: A cathodoluminescence study. III: Nature of nonradiative recombination at threading dislocations

@article{ author = { J. Lähnemann and V. M. Kaganer and K. K. Sabelfeld and A. E. Kireeva and U. Jahn and C. Chèze and R. Calarco and O. Brandt }, title = { Carrier diffusion in GaN: A cathodoluminescence study. III: Nature of nonradiative recombination at threading dislocations }, journal = { Physical Review Applied }, volume = { 17 }, year = { 2022 }, pages = { 024019 } }

TY - JOUR AU - J. Lähnemann AU - V. M. Kaganer AU - K. K. Sabelfeld AU - A. E. Kireeva AU - U. Jahn AU - C. Chèze AU - R. Calarco AU - O. Brandt TI - Carrier diffusion in GaN: A cathodoluminescence study. III: Nature of nonradiative recombination at threading dislocations JF - Physical Review Applied JA - Phys. Rev. Appl. J1 - VL - 17 SP - 024019 PY - 2022/02/07

Carrier diffusion in GaN: A cathodoluminescence study. II: Ambipolar vs. exciton diffusion

@article{ author = { O. Brandt and V. M. Kaganer and J. Lähnemann and T. Flissikowski and C. Pfüller and K. K. Sabelfeld and A. E. Kireeva and C. Chèze and R. Calarco and H. T. Grahn and U. Jahn }, title = { Carrier diffusion in GaN: A cathodoluminescence study. II: Ambipolar vs. exciton diffusion }, journal = { Physical Review Applied }, volume = { 17 }, year = { 2022 }, pages = { 024018 } }

TY - JOUR AU - O. Brandt AU - V. M. Kaganer AU - J. Lähnemann AU - T. Flissikowski AU - C. Pfüller AU - K. K. Sabelfeld AU - A. E. Kireeva AU - C. Chèze AU - R. Calarco AU - H. T. Grahn AU - U. Jahn TI - Carrier diffusion in GaN: A cathodoluminescence study. II: Ambipolar vs. exciton diffusion JF - Physical Review Applied JA - Phys. Rev. Appl. J1 - VL - 17 SP - 024018 PY - 2022/02/07

Carrier diffusion in GaN: A cathodoluminescence study. I: Temperature-dependent generation volume

@article{ author = { U. Jahn and V. M. Kaganer and K. K. Sabelfeld and A. E. Kireeva and J. Lähnemann and C. Pfüller and C. Chèze and K. Biermann and R. Calarco and O. Brandt }, title = { Carrier diffusion in GaN: A cathodoluminescence study. I: Temperature-dependent generation volume }, journal = { Physical Review Applied }, volume = { 17 }, year = { 2022 }, pages = { 024017 } }

TY - JOUR AU - U. Jahn AU - V. M. Kaganer AU - K. K. Sabelfeld AU - A. E. Kireeva AU - J. Lähnemann AU - C. Pfüller AU - C. Chèze AU - K. Biermann AU - R. Calarco AU - O. Brandt TI - Carrier diffusion in GaN: A cathodoluminescence study. I: Temperature-dependent generation volume JF - Physical Review Applied JA - Phys. Rev. Appl. J1 - VL - 17 SP - 024017 PY - 2022/02/07

Cross-sectional shape evolution of GaN nanowires during molecular beam epitaxy growth on Si(111)

@article{ author = { R. Volkov and N. Borgardt and O. Konovalov and S. Fernández-Garrido and O. Brandt and V. M. Kaganer }, title = { Cross-sectional shape evolution of GaN nanowires during molecular beam epitaxy growth on Si(111) }, journal = { Nanoscale Advances }, volume = { 4 }, year = { 2022 }, pages = { 562 } }

TY - JOUR AU - R. Volkov AU - N. Borgardt AU - O. Konovalov AU - S. Fernández-Garrido AU - O. Brandt AU - V. M. Kaganer TI - Cross-sectional shape evolution of GaN nanowires during molecular beam epitaxy growth on Si(111) JF - Nanoscale Advances JA - Nanoscale Adv. J1 - VL - 4 SP - 562 PY - 2022/01/18

Drastically enhanced metal incorporation in the epitaxy of oxides from elemental sources due to suboxide formation and evaporation

@article{ author = { G. Hoffmann and Zongzhe Cheng and O. Brandt and O. Bierwagen }, title = { Drastically enhanced metal incorporation in the epitaxy of oxides from elemental sources due to suboxide formation and evaporation }, journal = { APL Materials }, volume = { 9 }, year = { 2021 }, pages = { 111110 } }

TY - JOUR AU - G. Hoffmann AU - Zongzhe Cheng AU - O. Brandt AU - O. Bierwagen TI - Drastically enhanced metal incorporation in the epitaxy of oxides from elemental sources due to suboxide formation and evaporation JF - APL Materials JA - APL Mater. J1 - APLM VL - 9 SP - 111110 PY - 2021/11/15

Drastic effect of sequential deposition resulting from flux directionality for the luminescence efficiency of nanowire shells

@article{ author = { Hanno Küpers and Ryan B. Lewis and Pierre Corfdir and Michael Niehle and T. Flissikowski and H. T. Grahn and A. Trampert and O. Brandt and L. Geelhaar }, title = { Drastic effect of sequential deposition resulting from flux directionality for the luminescence efficiency of nanowire shells }, journal = { ACS Applied Materials and Interfaces }, volume = { 13 }, year = { 2021 }, pages = { 50220 } }

TY - JOUR AU - Hanno Küpers AU - Ryan B. Lewis AU - Pierre Corfdir AU - Michael Niehle AU - T. Flissikowski AU - H. T. Grahn AU - A. Trampert AU - O. Brandt AU - L. Geelhaar TI - Drastic effect of sequential deposition resulting from flux directionality for the luminescence efficiency of nanowire shells JF - ACS Applied Materials and Interfaces JA - ACS Appl. Mater. Interfaces J1 - VL - 13 SP - 50220 PY - 2021/10/13

Enhanced radiative efficiency in GaN nanowires grown on sputtered TiNx

@article{ author = { T. Auzelle and M. Azadmand and T. Flissikowski and M. Ramsteiner and K. Morgenroth and C. Stemmler and S. Fernández-Garrido and S. Sanguinetti and H. T. Grahn and L. Geelhaar and O. Brandt }, title = { Enhanced radiative efficiency in GaN nanowires grown on sputtered TiNx }, journal = { ACS Photonics }, volume = { 8 }, year = { 2021 }, pages = { 1718 } }

TY - JOUR AU - T. Auzelle AU - M. Azadmand AU - T. Flissikowski AU - M. Ramsteiner AU - K. Morgenroth AU - C. Stemmler AU - S. Fernández-Garrido AU - S. Sanguinetti AU - H. T. Grahn AU - L. Geelhaar AU - O. Brandt TI - Enhanced radiative efficiency in GaN nanowires grown on sputtered TiNx JF - ACS Photonics JA - ACS Photonics J1 - VL - 8 SP - 1718 PY - 2021/05/12

External control of GaN band bending using phosphanate self-assembled monolayers

@article{ author = { T. Auzelle and F. Ullrich and S. Hietzschold and C. Sinito and S. Brackmann and W. Kowalsky and E. Mankel and O. Brandt and R. Lovrincic and S. Fernández-Garrido }, title = { External control of GaN band bending using phosphanate self-assembled monolayers }, journal = { ACS Applied Materials and Interfaces }, volume = { 13 }, year = { 2021 }, pages = { 4626 } }

TY - JOUR AU - T. Auzelle AU - F. Ullrich AU - S. Hietzschold AU - C. Sinito AU - S. Brackmann AU - W. Kowalsky AU - E. Mankel AU - O. Brandt AU - R. Lovrincic AU - S. Fernández-Garrido TI - External control of GaN band bending using phosphanate self-assembled monolayers JF - ACS Applied Materials and Interfaces JA - ACS Appl. Mater. Interfaces J1 - VL - 13 SP - 4626 PY - 2021/01/13

Radius-Dependent Homogeneous Strain in Uncoalesced GaN Nanowires

@article{ author = { G. Calabrese and D. van Treeck and V. M. Kaganer and O. Konovalov and P. Corfdir and C. Sinito and L. Geelhaar and O. Brandt and S. Fernández-Garrido }, title = { Radius-Dependent Homogeneous Strain in Uncoalesced GaN Nanowires }, journal = { Acta Materialia }, volume = { 195 }, year = { 2020 }, pages = { 87 } }

TY - JOUR AU - G. Calabrese AU - D. van Treeck AU - V. M. Kaganer AU - O. Konovalov AU - P. Corfdir AU - C. Sinito AU - L. Geelhaar AU - O. Brandt AU - S. Fernández-Garrido TI - Radius-Dependent Homogeneous Strain in Uncoalesced GaN Nanowires JF - Acta Materialia JA - Acta Mat. J1 - VL - 195 SP - 87 PY - 2020/05/15