Interfacial reactions during the molecular beam epitaxy of GaN nanowires on Ti/Al2O3

@article{ author = { G. Calabrese and G. Gao and D. van Treeck and P. Corfdir and C. Sinito and T. Auzelle and A. Trampert and L. Geelhaar and O. Brandt and S. Fernández-Garrido }, title = { Interfacial reactions during the molecular beam epitaxy of GaN nanowires on Ti/Al2O3 }, journal = { Nanotechnology }, volume = { 30 }, year = { 2019 }, pages = { 114001 } }

TY - JOUR AU - G. Calabrese AU - G. Gao AU - D. van Treeck AU - P. Corfdir AU - C. Sinito AU - T. Auzelle AU - A. Trampert AU - L. Geelhaar AU - O. Brandt AU - S. Fernández-Garrido TI - Interfacial reactions during the molecular beam epitaxy of GaN nanowires on Ti/Al2O3 JF - Nanotechnology JA - Nanotechnology J1 - NAN VL - 30 SP - 114001 PY - 2019/01/25

Excitonic Aharonov-Bohm oscillations in core-shell nanowires

@article{ author = { P. Corfdir and O. Marquardt and R. B. Lewis and C. Sinito and M. Ramsteiner and A. Trampert and U. Jahn and L. Geelhaar and O. Brandt and V. M. Fomin }, title = { Excitonic Aharonov-Bohm oscillations in core-shell nanowires }, journal = { Advanced Materials }, volume = { 31 }, year = { 2019 }, pages = { 1805645 } }

TY - JOUR AU - P. Corfdir AU - O. Marquardt AU - R. B. Lewis AU - C. Sinito AU - M. Ramsteiner AU - A. Trampert AU - U. Jahn AU - L. Geelhaar AU - O. Brandt AU - V. M. Fomin TI - Excitonic Aharonov-Bohm oscillations in core-shell nanowires JF - Advanced Materials JA - Adv. Mater. J1 - VL - 31 SP - 1805645 PY - 2019/01/15

Electronic properties of wurtzite GaAs: A correlated structural, optical, and theoretical analysis of the same polytypic GaAs nanowire

@article{ author = { A. Senichev and P. Corfdir and O. Brandt and M. Ramsteiner and S. Breuer and J. Schilling and L. Geelhaar and P. Werner }, title = { Electronic properties of wurtzite GaAs: A correlated structural, optical, and theoretical analysis of the same polytypic GaAs nanowire }, journal = { Nano Research }, volume = { 11 }, year = { 2018 }, pages = { 4708 } }

TY - JOUR AU - A. Senichev AU - P. Corfdir AU - O. Brandt AU - M. Ramsteiner AU - S. Breuer AU - J. Schilling AU - L. Geelhaar AU - P. Werner TI - Electronic properties of wurtzite GaAs: A correlated structural, optical, and theoretical analysis of the same polytypic GaAs nanowire JF - Nano Research JA - Nano Res. J1 - VL - 11 SP - 4708 PY - 2018/08/15

Monitoring the formation of GaN nanowires in molecular beam epitaxy by polarization-resolved optical reflectometry

@article{ author = { P. Corfdir and G. Calabrese and A. Laha and T. Auzelle and L. Geelhaar and O. Brandt and S. Fernández-Garrido }, title = { Monitoring the formation of GaN nanowires in molecular beam epitaxy by polarization-resolved optical reflectometry }, journal = { CrystEngComm }, volume = { 20 }, year = { 2018 }, pages = { 3202 } }

TY - JOUR AU - P. Corfdir AU - G. Calabrese AU - A. Laha AU - T. Auzelle AU - L. Geelhaar AU - O. Brandt AU - S. Fernández-Garrido TI - Monitoring the formation of GaN nanowires in molecular beam epitaxy by polarization-resolved optical reflectometry JF - CrystEngComm JA - CrystEngComm J1 - ISSN 1466-8033 VL - 20 SP - 3202 PY - 2018/05/18

Nanowires bending over backward from strain partitioning in asymmetric core-shell heterostructures

@article{ author = { R. B. Lewis and P. Corfdir and H. Küpers and T. Flissikowski and O. Brandt and L. Geelhaar }, title = { Nanowires bending over backward from strain partitioning in asymmetric core-shell heterostructures }, journal = { Nano Letters }, volume = { 18 }, year = { 2018 }, pages = { 2343 } }

TY - JOUR AU - R. B. Lewis AU - P. Corfdir AU - H. Küpers AU - T. Flissikowski AU - O. Brandt AU - L. Geelhaar TI - Nanowires bending over backward from strain partitioning in asymmetric core-shell heterostructures JF - Nano Letters JA - Nano Lett. J1 - VL - 18 SP - 2343 PY - 2018/03/23

Piezoelectric field, exciton lifetime, and cathodoluminescence intensity at threading dislocations in GaN{0001}

@article{ author = { V. M. Kaganer and K. K. Sabelfeld and O. Brandt }, title = { Piezoelectric field, exciton lifetime, and cathodoluminescence intensity at threading dislocations in GaN{0001} }, journal = { Applied Physics Letters }, volume = { 112 }, year = { 2018 }, pages = { 122101 } }

TY - JOUR AU - V. M. Kaganer AU - K. K. Sabelfeld AU - O. Brandt TI - Piezoelectric field, exciton lifetime, and cathodoluminescence intensity at threading dislocations in GaN{0001} JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 112 SP - 122101 PY - 2018/03/19

Plasma-assisted molecular beam epitaxy of GaN nanowires on epitaxial single-layer graphene

@article{ author = { S. Fernández-Garrido and M. Ramsteiner and L. A. Galves and C. Sinito and J. M. J. Lopes and L. Geelhaar and O. Brandt }, title = { Plasma-assisted molecular beam epitaxy of GaN nanowires on epitaxial single-layer graphene }, journal = { Proceedings of SPIE }, volume = { 10532 }, year = { 2018 }, pages = { 105321U } }

TY - JOUR AU - S. Fernández-Garrido AU - M. Ramsteiner AU - L. A. Galves AU - C. Sinito AU - J. M. J. Lopes AU - L. Geelhaar AU - O. Brandt TI - Plasma-assisted molecular beam epitaxy of GaN nanowires on epitaxial single-layer graphene JF - Proceedings of SPIE JA - Proc. SPIE J1 - VL - 10532 SP - 105321U PY - 2018/02/23

Crystal-phase quantum wires: One-dimensional heterostructures with atomically flat interfaces

@article{ author = { P. Corfdir and H. Li and O. Marquardt and G. Gao and M. R. Molas and J. K. Zettler and D. van Treeck and T. Flissikowski and M. Potemski and C. Draxl and A. Trampert and S. Fernández-Garrido and H. T. Grahn and O. Brandt }, title = { Crystal-phase quantum wires: One-dimensional heterostructures with atomically flat interfaces }, journal = { Nano Letters }, volume = { 18 }, year = { 2018 }, pages = { 247 } }

TY - JOUR AU - P. Corfdir AU - H. Li AU - O. Marquardt AU - G. Gao AU - M. R. Molas AU - J. K. Zettler AU - D. van Treeck AU - T. Flissikowski AU - M. Potemski AU - C. Draxl AU - A. Trampert AU - S. Fernández-Garrido AU - H. T. Grahn AU - O. Brandt TI - Crystal-phase quantum wires: One-dimensional heterostructures with atomically flat interfaces JF - Nano Letters JA - Nano Lett. J1 - VL - 18 SP - 247 PY - 2018/01/10

Luminescent N-polar (In,Ga)N/GaN quantum wells grown by plasma-assisted molecular beam epitaxy at 730 ◦C

@article{ author = { C. Chèze and F. Feix and J. Lähnemann and T. Flissikowski and M. Krysko and P. Wolny and H. Turski and C. Skierbiszewski and O. Brandt }, title = { Luminescent N-polar (In,Ga)N/GaN quantum wells grown by plasma-assisted molecular beam epitaxy at 730 ◦C }, journal = { Applied Physics Letters }, volume = { 112 }, year = { 2018 }, pages = { 022102 } }

TY - JOUR AU - C. Chèze AU - F. Feix AU - J. Lähnemann AU - T. Flissikowski AU - M. Krysko AU - P. Wolny AU - H. Turski AU - C. Skierbiszewski AU - O. Brandt TI - Luminescent N-polar (In,Ga)N/GaN quantum wells grown by plasma-assisted molecular beam epitaxy at 730 ◦C JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 112 SP - 022102 PY - 2018/01/08

Self-Assembled Formation of Long, Thin, and Uncoalesced GaN Nanowires on Crystalline TiN Films

@article{ author = { D. van Treeck and G. Calabrese and J. Goertz and V. M. Kaganer and O. Brandt and S. Fernández-Garrido and L. Geelhaar }, title = { Self-Assembled Formation of Long, Thin, and Uncoalesced GaN Nanowires on Crystalline TiN Films }, journal = { Nano Research }, volume = { 11, Issue 1 }, year = { 2018 }, pages = { 565 } }

TY - JOUR AU - D. van Treeck AU - G. Calabrese AU - J. Goertz AU - V. M. Kaganer AU - O. Brandt AU - S. Fernández-Garrido AU - L. Geelhaar TI - Self-Assembled Formation of Long, Thin, and Uncoalesced GaN Nanowires on Crystalline TiN Films JF - Nano Research JA - Nano Res. J1 - VL - 11, Issue 1 SP - 565 PY - 2018/01/01