Optical transitions in cubic GaN investigated by spatially resolved cathodoluminescence

@article{ author = { J. Menniger and U. Jahn and O. Brandt and H. Yang and K. H. Ploog }, title = { Optical transitions in cubic GaN investigated by spatially resolved cathodoluminescence }, journal = { Applied Physics Letters }, volume = { 69 }, year = { 1996 }, pages = { 836 } }

TY - JOUR AU - J. Menniger AU - U. Jahn AU - O. Brandt AU - H. Yang AU - K. H. Ploog TI - Optical transitions in cubic GaN investigated by spatially resolved cathodoluminescence JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 69 SP - 836 PY - 1996/01/01

Exciton luminescence of single-crystal GaN

@article{ author = { J. Müllhäuser and O. Brandt and H. Yang and K. Ploog }, title = { Exciton luminescence of single-crystal GaN }, journal = { Gallium Nitride and Related Materials; edited by F. A. Ponce, R. D. Dupuis, S. Nakamura, and J. A. Edmond, Mater. Res. Soc. Proc. Vol. 395 (MRS, Pittsburgh, 1996) }, volume = { }, year = { 1996 }, pages = { 607 } }

TY - JOUR AU - J. Müllhäuser AU - O. Brandt AU - H. Yang AU - K. Ploog TI - Exciton luminescence of single-crystal GaN JF - Gallium Nitride and Related Materials; edited by F. A. Ponce, R. D. Dupuis, S. Nakamura, and J. A. Edmond, Mater. Res. Soc. Proc. Vol. 395 (MRS, Pittsburgh, 1996) JA - Proc. MRS 395 J1 - - VL - SP - 607 PY - 1996/01/01

Electronic Raman scattering from donors in GaN and the relationship to the yellow luminescence band

@article{ author = { M. Ramsteiner and J. Menniger and O. Brandt and H. Yang and K. H. Ploog }, title = { Electronic Raman scattering from donors in GaN and the relationship to the yellow luminescence band }, journal = { Proceedings of the 23rd International Conference on the Physics of Semiconductors; edited by M. Scheffler and R. Zimmermann (World Scientific, Singapore, 1996) }, volume = { }, year = { 1996 }, pages = { 2933 } }

TY - JOUR AU - M. Ramsteiner AU - J. Menniger AU - O. Brandt AU - H. Yang AU - K. H. Ploog TI - Electronic Raman scattering from donors in GaN and the relationship to the yellow luminescence band JF - Proceedings of the 23rd International Conference on the Physics of Semiconductors; edited by M. Scheffler and R. Zimmermann (World Scientific, Singapore, 1996) JA - Proc. ICPS 23 J1 - - VL - SP - 2933 PY - 1996/01/01

Shallow donors in GaN studied by electronic Raman scattering in resonance with yellow luminescence transitions

@article{ author = { M. Ramsteiner and J. Menniger and O. Brandt and H. Yang and K. H. Ploog }, title = { Shallow donors in GaN studied by electronic Raman scattering in resonance with yellow luminescence transitions }, journal = { Applied Physics Letters }, volume = { 69 }, year = { 1996 }, pages = { 1276 } }

TY - JOUR AU - M. Ramsteiner AU - J. Menniger AU - O. Brandt AU - H. Yang AU - K. H. Ploog TI - Shallow donors in GaN studied by electronic Raman scattering in resonance with yellow luminescence transitions JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 69 SP - 1276 PY - 1996/01/01

MBE growth of cubic GaN on GaAs substrates

@article{ author = { H. Yang and O. Brandt and K. Ploog }, title = { MBE growth of cubic GaN on GaAs substrates }, journal = { Physica Status Solidi B }, volume = { 194 }, year = { 1996 }, pages = { 109 } }

TY - JOUR AU - H. Yang AU - O. Brandt AU - K. Ploog TI - MBE growth of cubic GaN on GaAs substrates JF - Physica Status Solidi B JA - Phys. Status Solidi B J1 - PSSB VL - 194 SP - 109 PY - 1996/01/01

Real-time monitoring of the surface stoichiometry during molecular beam epitaxy of cubic GaN on (001) GaAs by RHEED

@article{ author = { H. Yang and O. Brandt and K. Ploog }, title = { Real-time monitoring of the surface stoichiometry during molecular beam epitaxy of cubic GaN on (001) GaAs by RHEED }, journal = { Journal of Electronic Materials }, volume = { 25 }, year = { 1996 }, pages = { 787 } }

TY - JOUR AU - H. Yang AU - O. Brandt AU - K. Ploog TI - Real-time monitoring of the surface stoichiometry during molecular beam epitaxy of cubic GaN on (001) GaAs by RHEED JF - Journal of Electronic Materials JA - J. Electron. Mater. J1 - JEM VL - 25 SP - 787 PY - 1996/01/01

Initial stage of growth of GaN/GaAs(001) in plasma-assisted molecular beam epitaxy

@article{ author = { H. Yang and O. Brandt and A. Trampert and K. H. Ploog }, title = { Initial stage of growth of GaN/GaAs(001) in plasma-assisted molecular beam epitaxy }, journal = { Applied Surface Science }, volume = { 104/105 }, year = { 1996 }, pages = { 461 } }

TY - JOUR AU - H. Yang AU - O. Brandt AU - A. Trampert AU - K. H. Ploog TI - Initial stage of growth of GaN/GaAs(001) in plasma-assisted molecular beam epitaxy JF - Applied Surface Science JA - Appl. Surf. Sci. J1 - ASS VL - 104/105 SP - 461 PY - 1996/01/01

Evaluation of the surface stoichiometry during molecular beam epitaxy of cubic GaN on (001) GaAs

@article{ author = { H. Yang and O. Brandt and M. Wassermeier and J. Behrend and H.-P. Schönherr and K. H. Ploog }, title = { Evaluation of the surface stoichiometry during molecular beam epitaxy of cubic GaN on (001) GaAs }, journal = { Applied Physics Letters }, volume = { 68 }, year = { 1996 }, pages = { 244 } }

TY - JOUR AU - H. Yang AU - O. Brandt AU - M. Wassermeier AU - J. Behrend AU - H.-P. Schönherr AU - K. H. Ploog TI - Evaluation of the surface stoichiometry during molecular beam epitaxy of cubic GaN on (001) GaAs JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 68 SP - 244 PY - 1996/01/01