Nanofabrication

Dr. Oliver Brandt

Senior Scientist

Core Research Area Coordinator

Telefon: +49 30 20377 332

Raum: 0535

Email: brandt@pdi-berlin.de

 

Abteilung: Semiconductor Spectroscopy

Core research areas: Nanoanalytics , Nanofabrication , III-V nanowires for optoelectronics

 

 

61 Autor J. K. Zettler , P. Corfdir , C. Hauswald , E. Luna , U. Jahn , T. Flissikowski , E. Schmidt , C. Ronning , A. Trampert , L. Geelhaar , H. T. Grahn , O. Brandt , S. Fernández-Garrido
Titel

Observation of dielectrically confined excitons in ultrathin GaN nanowires up to room temperature

Source Nano Lett. , 16 , 973 ( 2016 )
DOI : 10.1021/acs.nanolett.5b03931 | 2739 Cite : Bibtex RIS
J. K. Zettler, P. Corfdir, C. Hauswald, E. Luna, U. Jahn, T. Flissikowski, E. Schmidt, C. Ronning, A. Trampert, L. Geelhaar, H. T. Grahn, O. Brandt, and S. Fernández-Garrido

62 Autor Y. Cho , S. Sadofev , S. Fernández-Garrido , R. Calarco , H. Riechert , Z. Galazka , R. Uecker , O. Brandt
Titel

Impact of substrate nitridation on the growth of InN on In2O3(111) by plasma-assisted molecular beam epitaxy

Source Appl. Surf. Sci. , 369 , 159 ( 2016 )
DOI : 10.1016/j.apsusc.2016.01.268 | 2735 Cite : Bibtex RIS
Y. Cho, S. Sadofev, S. Fernández-Garrido, R. Calarco, H. Riechert, Z. Galazka, R. Uecker, and O. Brandt

63 Autor T. Krause , M. Hanke , O. Brandt , A. Trampert
Titel

Counterintuitive strain distribution in axial (In,Ga)N/GaN nanowires

Source Appl. Phys. Lett. , 108 , 032103 ( 2016 )
DOI : 10.1063/1.4940053 | Download: PDF | 2763 Cite : Bibtex RIS
T. Krause, M. Hanke, O. Brandt, and A. Trampert

64 Autor J. Lähnemann , P. Corfdir , F. Feix , J. Kamimura , T. Flissikowski , H. T. Grahn , L. Geelhaar , O. Brandt
Titel

Radial Stark effect in (In,Ga)N nanowires

Source Nano Lett. , 16 , 917 ( 2016 )
DOI : 10.1021/acs.nanolett.5b03748 | arxiv: 1601.07201 | 2744 Cite : Bibtex RIS
J. Lähnemann, P. Corfdir, F. Feix, J. Kamimura, T. Flissikowski, H. T. Grahn, L. Geelhaar, and O. Brandt

65 Autor J. K. Zettler , P. Corfdir , L. Geelhaar , H. Riechert , O. Brandt , S. Fernández-Garrido
Titel

Improved control over spontaneously formed GaN nanowires in molecular beam epitaxy using a two-step growth process

Source Nanotechnology , 26 , 445604 ( 2015 )
DOI : 10.1088/0957-4484/26/44/445604 | arxiv: 1508.06266 | 2712 Cite : Bibtex RIS
J. K. Zettler, P. Corfdir, L. Geelhaar, H. Riechert, O. Brandt, and S. Fernández-Garrido

66 Autor F. Isa , C. Chèze , M. Siekacz , C. Hauswald , J. Lähnemann , S. Fernández-Garrido , T. Kreilinger , M. Ramsteiner , Y. A. Rojas Dasilva , O. Brandt , G. Isella , R. Erni , R. Calarco , H. Riechert , L. Miglio
Titel

Integration of GaN crystals on micro-patterned Si(0 0 1) substrates by plasma-assisted molecular beam epitaxy

Source Cryst. Growth Des. , 15 , 4886 ( 2015 )
DOI : 10.1021/acs.cgd.5b00727 | 2720 Cite : Bibtex RIS
F. Isa, C. Chèze, M. Siekacz, C. Hauswald, J. Lähnemann, S. Fernández-Garrido, T. Kreilinger, M. Ramsteiner, Y. A. Rojas Dasilva, O. Brandt, G. Isella, R. Erni, R. Calarco, H. Riechert, and L. Miglio

67 Autor O. Marquardt , L. Geelhaar , O. Brandt
Titel

Impact of individual dopants on the electronic properties of axial (In,Ga)N/GaN nanowire heterostructures

Source IEEE , IEEE Catalog Nr. CFP15817-PRT , 113 ( 2015 )
DOI : ISBN 978-1-4799-8378-0 | 2714 Cite : Bibtex RIS
O. Marquardt, L. Geelhaar, and O. Brandt

68 Autor V. M. Kaganer , B. Jenichen , M. Ramsteiner , U. Jahn , C. Hauswald , F. Grosse , S. Fernández-Garrido , O. Brandt
Titel

Quantitative evaluation of the broadening of x-ray diffraction, Raman, and photoluminescence lines by dislocation-induced strain in heteroepitaxial GaN films

Source J. Phys. D: Appl. Phys. , 48 , 385105 ( 2015 )
DOI : 10.1088/0022-3727/48/38/385105 | 2709 Cite : Bibtex RIS
V. M. Kaganer, B. Jenichen, M. Ramsteiner, U. Jahn, C. Hauswald, F. Grosse, S. Fernández-Garrido, and O. Brandt

69 Autor C. Gao , C. Dong , C. Jia , D. Xue , J. Herfort , O. Brandt
Titel

In-plane sixfold symmetry for α-Fe(110) on GaN{0001}: Measurement of the cubic anisotropy constant K3 of Fe

Source Phys. Rev. B , 92 , 094404 ( 2015 )
DOI : 10.1103/PhysRevB.92.094404 | Download: PDF | 2680 Cite : Bibtex RIS
C. Gao, C. Dong, C. Jia, D. Xue, J. Herfort, and O. Brandt

70 Autor J. K. Zettler , C. Hauswald , P. Corfdir , M. Musolino , L. Geelhaar , H. Riechert , O. Brandt , S. Fernández-Garrido
Titel

High-temperature growth of GaN nanowires by molecular beam epitaxy: toward the material quality of bulk GaN

Source Cryst. Growth Des. , 15 , 4104 ( 2015 )
DOI : 10.1021/acs.cgd.5b00690 | 2697 Cite : Bibtex RIS
J. K. Zettler, C. Hauswald, P. Corfdir, M. Musolino, L. Geelhaar, H. Riechert, O. Brandt, and S. Fernández-Garrido