Nanofabrication

Dr. Oliver Brandt

Senior Scientist

Core Research Area Coordinator

Telefon: +49 30 20377 332

Raum: 0535

Email: brandt@pdi-berlin.de

 

Abteilung: Semiconductor Spectroscopy

Core research areas: Nanoanalytics , Nanofabrication , III-V nanowires for optoelectronics

 

 

71 Autor O. Marquardt , L. Geelhaar , O. Brandt
Titel

Impact of random dopant fluctuations on the electronic properties of InxGa1-xN/GaN axial nanowire heterostructures

Source Nano Lett. , 15 , 4289 ( 2015 )
DOI : 10.1021/acs.nanolett.5b00101 | 2678 Cite : Bibtex RIS
O. Marquardt, L. Geelhaar, and O. Brandt

72 Autor O. Marquardt , L. Geelhaar , O. Brandt
Titel

Electronic properties of axial InxGa1-xN insertions in GaN nanowires

Source J. Comput. Electron. , 14 , 464 ( 2015 )
DOI : 10.1007/s10825-015-0669-1 | 2679 Cite : Bibtex RIS
O. Marquardt, L. Geelhaar, and O. Brandt

73 Autor M. Wölz , C. Hauswald , T. Flissikowski , T. Gotschke , S. Fernández-Garrido , O. Brandt , H. T. Grahn , L. Geelhaar , H. Riechert
Titel

Epitaxial growth of GaN nanowires with high structural perfection on a metallic TiN film

Source Nano Lett. , 15 , 3743 ( 2015 )
DOI : 10.1021/acs.nanolett.5b00251 | 2698 Cite : Bibtex RIS
M. Wölz, C. Hauswald, T. Flissikowski, T. Gotschke, S. Fernández-Garrido, O. Brandt, H. T. Grahn, L. Geelhaar, and H. Riechert

74 Autor P. Corfdir , F. Feix , J. K. Zettler , S. Fernández-Garrido , O. Brandt
Titel

Importance of the dielectric contrast for the polarization of excitonic transitions in single GaN nanowires

Source New J. Phys. , 17 , 033040 ( 2015 )
DOI : 10.1088/1367-2630/17/3/033040 | Download: PDF | 2664 Cite : Bibtex RIS
P. Corfdir, F. Feix, J. K. Zettler, S. Fernández-Garrido, and O. Brandt

75 Autor S. Schulz , O. Marquardt , C. Coughlan , M. A. Caro , L. Geelhaar , O. Brandt , E. P. O'Reilly
Titel

Atomistic description of wave function localization effects in In(x)Ga(1-x)N alloys and quantum wells

Source Proc. SPIE , 9357 , ( 2015 )
DOI : 10.1117/12.2084800 | Download: PDF | 2721 Cite : Bibtex RIS
S. Schulz, O. Marquardt, C. Coughlan, M. A. Caro, L. Geelhaar, O. Brandt, and E. P. O'Reilly

76 Autor S. Fernández-Garrido , J. K. Zettler , L. Geelhaar , O. Brandt
Titel

Monitoring the formation of nanowires by line-of-sight quadrupole mass spectrometry: a comprehensive description of the temporal evolution of GaN nanowire ensembles

Source Nano Lett. , 15 , 1930 ( 2015 )
DOI : 10.1021/nl504778s | 2684 Cite : Bibtex RIS
S. Fernández-Garrido, J. K. Zettler, L. Geelhaar, and O. Brandt

77 Autor M. Musolino , A. Tahraoui , S. Fernández-Garrido , O. Brandt , A. Trampert , L. Geelhaar , H. Riechert
Titel

Compatibility of the selective area growth of GaN nanowires on AlN-buffered Si substrates with the operation of light emitting diodes

Source Nanotechnology , 26 , 085605 ( 2015 )
DOI : 10.1088/0957-4484/26/8/085605 | arxiv: 1410.7546 | 2564 Cite : Bibtex RIS
M. Musolino, A. Tahraoui, S. Fernández-Garrido, O. Brandt, A. Trampert, L. Geelhaar, and H. Riechert

78 Autor K. K. Sabelfeld , O. Brandt , V. M. Kaganer
Titel

Stochastic model for the fluctuation-limited reaction-diffusion kinetics in inhomogeneous media based on the nonlinear Smoluchowski equations

Source J. Math. Chem. , 53 , 651 ( 2015 )
DOI : 10.1007/s10910-014-0446-6 | 2683 Cite : Bibtex RIS
K. K. Sabelfeld, O. Brandt, and V. M. Kaganer

79 Autor O. Romanyuk , S. Fernández-Garrido , P. Jiricek , I. Bartos , L. Geelhaar , O. Brandt , T. Paskova
Titel

Non-destructive assessment of the polarity of GaN nanowire ensembles using low-energy electron diffraction and x-ray photoelectron diffraction

Source Appl. Phys. Lett. , 106 , 021602 ( 2015 )
DOI : 10.1063/1.4905651 | Download: PDF | 2667 Cite : Bibtex RIS
O. Romanyuk, S. Fernández-Garrido, P. Jiricek, I. Bartos, L. Geelhaar, O. Brandt, and T. Paskova

80 Autor P. Corfdir , C. Hauswald , J. K. Zettler , T. Flissikowski , J. Lähnemann , S. Fernández-Garrido , L. Geelhaar , H. T. Grahn , O. Brandt
Titel

Stacking faults as quantum wells in nanowires: Density of states, oscillator strength and radiative efficiency

Source Phys. Rev. B , 90 , 195309 ( 2014 )
DOI : 10.1103/PhysRevB.90.195309 | Download: PDF | 2636 Cite : Bibtex RIS
P. Corfdir, C. Hauswald, J. K. Zettler, T. Flissikowski, J. Lähnemann, S. Fernández-Garrido, L. Geelhaar, H. T. Grahn, and O. Brandt