Nanofabrication

Dr. Achim Trampert

Head of Department Microstructure

Achim Trampert

Telefon: +49 30 20377 280

Raum: 0615

Email: trampert@pdi-berlin.de

 

Abteilung: Microstructure

Core research areas: Ferromagnet/ semiconductor hybrid structures , Nanoanalytics , Nanofabrication , III-V nanowires for optoelectronics

 

 

21 Autor L. Nicolai , Ž. Gačević , E. Calleja , A. Trampert
Titel

Electron tomography of pencil-shaped GaN/(In,Ga)N core-shell nanowires

Source Nanoscale Res. Lett. , 14 , 232 ( 2019 )
DOI : 10.1186/s11671-019-3072-1 | Download: PDF | 3096 Cite : Bibtex RIS
L. Nicolai, Ž. Gačević, E. Calleja, and A. Trampert

22 Autor O. Delorme , L. Cerutti , R. Kudrawiec , E. Luna , J. Kopaczek , M. Gladysiewicz , A. Trampert , E. Tournie , J.-B. Rodriguez
Titel

GaSbBi Alloys and Heterostructures: Fabrication and Properties

Source Bismuth-Containing Alloys and Nanostructures. Springer Series in Materials Science; edited by S. Wang, P. Lu , 285 , 125 ( 2019 )
DOI : 10.1007/978-981-13-8078-5_6 | 3128 Cite : Bibtex RIS
O. Delorme, L. Cerutti, R. Kudrawiec, E. Luna, J. Kopaczek, M. Gladysiewicz, A. Trampert, E. Tournie, and J.-B. Rodriguez

23 Autor G. Calabrese , G. Gao , D. van Treeck , P. Corfdir , C. Sinito , T. Auzelle , A. Trampert , L. Geelhaar , O. Brandt , S. Fernández-Garrido
Titel

Interfacial reactions during the molecular beam epitaxy of GaN nanowires on Ti/Al2O3

Source Nanotechnology , 30 , 114001 ( 2019 )
DOI : 10.1088/1361-6528/aaf9c5 | 3072 Cite : Bibtex RIS
G. Calabrese, G. Gao, D. van Treeck, P. Corfdir, C. Sinito, T. Auzelle, A. Trampert, L. Geelhaar, O. Brandt, and S. Fernández-Garrido

24 Autor P. Corfdir , O. Marquardt , R. B. Lewis , C. Sinito , M. Ramsteiner , A. Trampert , U. Jahn , L. Geelhaar , O. Brandt , V. M. Fomin
Titel

Excitonic Aharonov-Bohm oscillations in core-shell nanowires

Source Adv. Mater. , 31 , 1805645 ( 2019 )
DOI : 10.1002/adma.201805645 | 3041 Cite : Bibtex RIS
P. Corfdir, O. Marquardt, R. B. Lewis, C. Sinito, M. Ramsteiner, A. Trampert, U. Jahn, L. Geelhaar, O. Brandt, and V. M. Fomin

25 Autor J. Hartmann , I. Manglano Clavero , L. Nicolai , C. Margenfeld , H. Spende , J. Ledig , H. Zhou , F. Steib , A. Jaros , A. Avramescu , M. Strassburg , A. Trampert , H.-H. Wehmann , H.-J. Lugauer , T. Voss , A. Waag
Titel

3D GaN Fins as a Versatile Platform for a-Plane-Based Devices

Source Phys. Status Solidi B , 256 , 1800477 ( 2019 )
DOI : 10.1002/pssb.201800477 | 3082 Cite : Bibtex RIS
J. Hartmann, I. Manglano Clavero, L. Nicolai, C. Margenfeld, H. Spende, J. Ledig, H. Zhou, F. Steib, A. Jaros, A. Avramescu, M. Strassburg, A. Trampert, H.-H. Wehmann, H.-J. Lugauer, T. Voss, and A. Waag

26 Autor Z. Cheng , M. Hanke , Z. Galazka , A. Trampert
Titel

Thermal expansion of single-crystalline beta-Ga2O3 from RT to 1200K studied by synchrotron-based high resolution x-ray diffraction

Source Appl. Phys. Lett. , 113 , 182102 ( 2018 )
DOI : 10.1063/1.5054265 | Download: PDF | 3060 Cite : Bibtex RIS
Z. Cheng, M. Hanke, Z. Galazka, and A. Trampert

27 Autor E. Luna , O. Delorme , L. Cerutti , E. Tournie , J.B. Rodriguez , A. Trampert
Titel

Transmission Electron Microscopy of Ga(Sb,Bi)/GaSb Quantum Wells with varying Bi content and quantum well thickness

Source Semicond. Sci. Technol. , 33 , 094006 ( 2018 )
DOI : 10.1088/1361-6641/aad5c4 | 3052 Cite : Bibtex RIS
E. Luna, O. Delorme, L. Cerutti, E. Tournie, J.B. Rodriguez, and A. Trampert

28 Autor Z. Cheng , M. Hanke , Z. Galazka , A. Trampert
Titel

Growth mode evolution during (100)-oriented beta-Ga2O3 homoepitaxy

Source Nanotechnology , 29 , 395705 ( 2018 )
DOI : 10.1088/1361-6528/aad21b | 2996 Cite : Bibtex RIS
Z. Cheng, M. Hanke, Z. Galazka, and A. Trampert

29 Autor B. Jenichen , M. Hanke , S. Gaucher , A. Trampert , J. Herfort , H. Kirmse , B. Haas , E. Willinger , X. Huang , S. C. Erwin
Titel

Ordered structure of FeGe2 formed during solid-phase epitaxy

Source Phys. Rev. Mater. , 2 , 051402 ( 2018 )
DOI : 10.1103/PhysRevMaterials.2.051402 | 3025 Cite : Bibtex RIS
B. Jenichen, M. Hanke, S. Gaucher, A. Trampert, J. Herfort, H. Kirmse, B. Haas, E. Willinger, X. Huang, and S. C. Erwin

30 Autor F. Ishikawa , K. Higashi , S. Fuyuno , M. Morifuji , M. Kondow , A. Trampert
Titel

Annealing induced atomic rearrangements on (Ga,In) (N,As) probed by hard X-ray photoelectron spectroscopy and X-ray absorption fine structure

Source Sci. Rep. , 8 , 5962 ( 2018 )
DOI : 10.1038/s41598-018-23941-y | Download: PDF | 3070 Cite : Bibtex RIS
F. Ishikawa, K. Higashi, S. Fuyuno, M. Morifuji, M. Kondow, and A. Trampert