Wannier-Stark localization in asymmetric double-well superlattices

@article{ author = { F. Agullo-Rueda and H.T. Grahn and K. Ploog }, title = { Wannier-Stark localization in asymmetric double-well superlattices }, journal = { Journal of Applied Physics }, volume = { 79 }, year = { 1996 }, pages = { 8106 } }

TY - JOUR AU - F. Agullo-Rueda AU - H.T. Grahn AU - K. Ploog TI - Wannier-Stark localization in asymmetric double-well superlattices JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 79 SP - 8106 PY - 1996/01/01

Infrared investigation of neutral cobalt in GaP

@article{ author = { D. Ammerlahn and R. Heitz and D. Bimberg and D. Côte and B. Clerjaud and W. Ulrici }, title = { Infrared investigation of neutral cobalt in GaP }, journal = { Proceedings of the 23rd International Conference on the Physics of Semiconductors; edited by M. Scheffler and R. Zimmermann (World Scientific, Singapore, 1996) }, volume = { }, year = { 1996 }, pages = { 2825 } }

TY - JOUR AU - D. Ammerlahn AU - R. Heitz AU - D. Bimberg AU - D. Côte AU - B. Clerjaud AU - W. Ulrici TI - Infrared investigation of neutral cobalt in GaP JF - Proceedings of the 23rd International Conference on the Physics of Semiconductors; edited by M. Scheffler and R. Zimmermann (World Scientific, Singapore, 1996) JA - Proc. ICPS 23 J1 - - VL - SP - 2825 PY - 1996/01/01

Hot electrons in -doped GaAs

@article{ author = { M. Asche }, title = { Hot electrons in -doped GaAs }, journal = { Delta-doping of semiconductors; edited by E. F. Schubert (Cambridge University Press, 1996) }, volume = { }, year = { 1996 }, pages = { 444 } }

TY - JOUR AU - M. Asche TI - Hot electrons in -doped GaAs JF - Delta-doping of semiconductors; edited by E. F. Schubert (Cambridge University Press, 1996) JA - DDS J1 - - VL - SP - 444 PY - 1996/01/01

Hot electrons and nonequilibrium phonons in multiple -doped GaAs

@article{ author = { M. Asche and P. Kleinert and R. Hey and H. Kostial and B. Danilchenko and A. Klimashov and S. Roshko }, title = { Hot electrons and nonequilibrium phonons in multiple -doped GaAs }, journal = { Hot Carriers in Semiconductors; edited by K. Hess, J. P. Leburton, and U. Ravaioli (Plenum Press, New York, 1996) }, volume = { }, year = { 1996 }, pages = { 85 } }

TY - JOUR AU - M. Asche AU - P. Kleinert AU - R. Hey AU - H. Kostial AU - B. Danilchenko AU - A. Klimashov AU - S. Roshko TI - Hot electrons and nonequilibrium phonons in multiple -doped GaAs JF - Hot Carriers in Semiconductors; edited by K. Hess, J. P. Leburton, and U. Ravaioli (Plenum Press, New York, 1996) JA - HCIS J1 - - VL - SP - 85 PY - 1996/01/01

Ultrafast coherent carrier control in quantum wells

@article{ author = { J. J. Baumberg and A. P. Heberle and K. Köhler and K. Ploog }, title = { Ultrafast coherent carrier control in quantum wells }, journal = { Journal of the Optical Society of America B }, volume = { 13 }, year = { 1996 }, pages = { 1246 } }

TY - JOUR AU - J. J. Baumberg AU - A. P. Heberle AU - K. Köhler AU - K. Ploog TI - Ultrafast coherent carrier control in quantum wells JF - Journal of the Optical Society of America B JA - J. Opt. Soc. Am. B J1 - JOSAB VL - 13 SP - 1246 PY - 1996/01/01

Formation of GaAs/AlAs (001) interfaces studied by scanning tunneling microscopy

@article{ author = { J. Behrend and M. Wassermeier and W. Braun and P. Krispin and K. H. Ploog }, title = { Formation of GaAs/AlAs (001) interfaces studied by scanning tunneling microscopy }, journal = { Physical Review B: Solid State }, volume = { 53 }, year = { 1996 }, pages = { 9907 } }

TY - JOUR AU - J. Behrend AU - M. Wassermeier AU - W. Braun AU - P. Krispin AU - K. H. Ploog TI - Formation of GaAs/AlAs (001) interfaces studied by scanning tunneling microscopy JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 53 SP - 9907 PY - 1996/01/01

Formation processes of GaAs/AlAs (001) heterointerfaces studied by scanning tunneling microscopy

@article{ author = { J. Behrend and M. Wassermeier and W. Braun and P. Krispin and K. H. Ploog }, title = { Formation processes of GaAs/AlAs (001) heterointerfaces studied by scanning tunneling microscopy }, journal = { Proceedings of the 23rd International Conference on the Physics of Semiconductors; edited by M. Scheffler and R. Zimmermann (World Scientific, Singapore, 1996) }, volume = { }, year = { 1996 }, pages = { 1131 } }

TY - JOUR AU - J. Behrend AU - M. Wassermeier AU - W. Braun AU - P. Krispin AU - K. H. Ploog TI - Formation processes of GaAs/AlAs (001) heterointerfaces studied by scanning tunneling microscopy JF - Proceedings of the 23rd International Conference on the Physics of Semiconductors; edited by M. Scheffler and R. Zimmermann (World Scientific, Singapore, 1996) JA - Proc. ICPS 23 J1 - - VL - SP - 1131 PY - 1996/01/01

Virtual surfactant mediated epitaxy of InAs on GaAs(001) studied by scanning tunneling microscopy

@article{ author = { J. Behrend and M. Wassermeier and K. H. Ploog }, title = { Virtual surfactant mediated epitaxy of InAs on GaAs(001) studied by scanning tunneling microscopy }, journal = { Journal of Crystal Growth }, volume = { 167 }, year = { 1996 }, pages = { 440 } }

TY - JOUR AU - J. Behrend AU - M. Wassermeier AU - K. H. Ploog TI - Virtual surfactant mediated epitaxy of InAs on GaAs(001) studied by scanning tunneling microscopy JF - Journal of Crystal Growth JA - J. Cryst. Growth J1 - JGC VL - 167 SP - 440 PY - 1996/01/01

Spectroscopic difference ellipsometry (SDE) - a new approach to measure surface optical anisotropy

@article{ author = { J. Behrend and M. Wassermeier and K. H. Ploog and J. T. Zettler and K. Stahrenberg }, title = { Spectroscopic difference ellipsometry (SDE) - a new approach to measure surface optical anisotropy }, journal = { Highlights of light spectroscopy on semiconductors; edited by A. d'Andrea, L.G. Quagliani, and S. Selci (World Scientific, Singapore, 1996) }, volume = { }, year = { 1996 }, pages = { 100 } }

TY - JOUR AU - J. Behrend AU - M. Wassermeier AU - K. H. Ploog AU - J. T. Zettler AU - K. Stahrenberg TI - Spectroscopic difference ellipsometry (SDE) - a new approach to measure surface optical anisotropy JF - Highlights of light spectroscopy on semiconductors; edited by A. d'Andrea, L.G. Quagliani, and S. Selci (World Scientific, Singapore, 1996) JA - HLSS J1 - - VL - SP - 100 PY - 1996/01/01

Modulation of Fano resonances by an external magnetic field in semiconductor quantum wells

@article{ author = { V. Bellani and E. Perez and S. Zimmermann and L. Vina and R. Hey and K. Ploog }, title = { Modulation of Fano resonances by an external magnetic field in semiconductor quantum wells }, journal = { Solid-State Electronics }, volume = { 40 }, year = { 1996 }, pages = { 85 } }

TY - JOUR AU - V. Bellani AU - E. Perez AU - S. Zimmermann AU - L. Vina AU - R. Hey AU - K. Ploog TI - Modulation of Fano resonances by an external magnetic field in semiconductor quantum wells JF - Solid-State Electronics JA - Solid-State Electron. J1 - SSE VL - 40 SP - 85 PY - 1996/01/01

Evolution of Fano resonances in two- and three-dimensional semiconductors with a magnetic field

@article{ author = { V. Bellani and E. Perez and S. Zimmermann and L. Vina and R. Hey and K. Ploog }, title = { Evolution of Fano resonances in two- and three-dimensional semiconductors with a magnetic field }, journal = { Solid State Communications }, volume = { 97 }, year = { 1996 }, pages = { 459 } }

TY - JOUR AU - V. Bellani AU - E. Perez AU - S. Zimmermann AU - L. Vina AU - R. Hey AU - K. Ploog TI - Evolution of Fano resonances in two- and three-dimensional semiconductors with a magnetic field JF - Solid State Communications JA - Solid State Commun. J1 - SSC VL - 97 SP - 459 PY - 1996/01/01

Modification of Fano resonances by resonant polaron coupling in bulk GaAs

@article{ author = { V. Bellani and L. Vina and R. Hey and K. H. Ploog }, title = { Modification of Fano resonances by resonant polaron coupling in bulk GaAs }, journal = { Semiconductor Science and Technology }, volume = { 11 }, year = { 1996 }, pages = { 1411 } }

TY - JOUR AU - V. Bellani AU - L. Vina AU - R. Hey AU - K. H. Ploog TI - Modification of Fano resonances by resonant polaron coupling in bulk GaAs JF - Semiconductor Science and Technology JA - Semicond. Sci. Technol. J1 - SST VL - 11 SP - 1411 PY - 1996/01/01

Quenching of Fano resonances in GaAs due to electron-phonon polaronic interaction

@article{ author = { V. Bellani and L. Vina and E. Perez and R. Hey and K. Ploog }, title = { Quenching of Fano resonances in GaAs due to electron-phonon polaronic interaction }, journal = { Proceedings of the 23rd International Conference on the Physics of Semiconductors; edited by M. Scheffler and R. Zimmermann (World Scientific, Singapore, 1996) }, volume = { }, year = { 1996 }, pages = { 373 } }

TY - JOUR AU - V. Bellani AU - L. Vina AU - E. Perez AU - R. Hey AU - K. Ploog TI - Quenching of Fano resonances in GaAs due to electron-phonon polaronic interaction JF - Proceedings of the 23rd International Conference on the Physics of Semiconductors; edited by M. Scheffler and R. Zimmermann (World Scientific, Singapore, 1996) JA - Proc. ICPS 23 J1 - - VL - SP - 373 PY - 1996/01/01

Time-resolved electroluminescence spectroscopy of resonant tunneling in GaAs-AlAs superlattices

@article{ author = { D. Bertram and R. Klann and H.T. Grahn and K. v. Klitzing and K. Eberl }, title = { Time-resolved electroluminescence spectroscopy of resonant tunneling in GaAs-AlAs superlattices }, journal = { Applied Physics Letters }, volume = { 68 }, year = { 1996 }, pages = { 2921 } }

TY - JOUR AU - D. Bertram AU - R. Klann AU - H.T. Grahn AU - K. v. Klitzing AU - K. Eberl TI - Time-resolved electroluminescence spectroscopy of resonant tunneling in GaAs-AlAs superlattices JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 68 SP - 2921 PY - 1996/01/01

Magnetooscillations in the electroluminescence intensity of excited subbands in resonantly coupled superlattices

@article{ author = { D. Bertram and H.T. Grahn and O. Kuhn and D. K. Maude and J. C. Portal and K. Ploog and K. v. Klitzing }, title = { Magnetooscillations in the electroluminescence intensity of excited subbands in resonantly coupled superlattices }, journal = { Surface Science }, volume = { 361/362 }, year = { 1996 }, pages = { 387 } }

TY - JOUR AU - D. Bertram AU - H.T. Grahn AU - O. Kuhn AU - D. K. Maude AU - J. C. Portal AU - K. Ploog AU - K. v. Klitzing TI - Magnetooscillations in the electroluminescence intensity of excited subbands in resonantly coupled superlattices JF - Surface Science JA - Surf. Sci. J1 - SuSc VL - 361/362 SP - 387 PY - 1996/01/01

Growth mode, strain relief and segregation of (Ga,In)Sb on GaSb(001) grown by molecular beam epitaxy

@article{ author = { N. Bertru and O. Brandt and M. Wassermeier and K. H. Ploog }, title = { Growth mode, strain relief and segregation of (Ga,In)Sb on GaSb(001) grown by molecular beam epitaxy }, journal = { Applied Physics Letters }, volume = { 68 }, year = { 1996 }, pages = { 31 } }

TY - JOUR AU - N. Bertru AU - O. Brandt AU - M. Wassermeier AU - K. H. Ploog TI - Growth mode, strain relief and segregation of (Ga,In)Sb on GaSb(001) grown by molecular beam epitaxy JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 68 SP - 31 PY - 1996/01/01

Structural and optical properties of strained (Ga,In)Sb/GaAs quantum wells grown by molecular-beam epitaxy

@article{ author = { N. Bertru and R. Klann and A. Mazuelas and O. Brandt and K. H. Ploog and S. Gaillard }, title = { Structural and optical properties of strained (Ga,In)Sb/GaAs quantum wells grown by molecular-beam epitaxy }, journal = { Applied Physics Letters }, volume = { 69 }, year = { 1996 }, pages = { 2237 } }

TY - JOUR AU - N. Bertru AU - R. Klann AU - A. Mazuelas AU - O. Brandt AU - K. H. Ploog AU - S. Gaillard TI - Structural and optical properties of strained (Ga,In)Sb/GaAs quantum wells grown by molecular-beam epitaxy JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 69 SP - 2237 PY - 1996/01/01

Dephasing of interacting heavy-hole and light-hole excitons in GaAs quantum wells

@article{ author = { K. Bott and E. J. Mayer and G. O. Smith and V. Heuckeroth and M. Hübner and J. Kuhl and T. Meier and A. Schulze and M. Lindberg and S. W. Koch and P. Thomas and R. Hey and K. Ploog }, title = { Dephasing of interacting heavy-hole and light-hole excitons in GaAs quantum wells }, journal = { Journal of the Optical Society of America B }, volume = { 13 }, year = { 1996 }, pages = { 1026 } }

TY - JOUR AU - K. Bott AU - E. J. Mayer AU - G. O. Smith AU - V. Heuckeroth AU - M. Hübner AU - J. Kuhl AU - T. Meier AU - A. Schulze AU - M. Lindberg AU - S. W. Koch AU - P. Thomas AU - R. Hey AU - K. Ploog TI - Dephasing of interacting heavy-hole and light-hole excitons in GaAs quantum wells JF - Journal of the Optical Society of America B JA - J. Opt. Soc. Am. B J1 - JOSAB VL - 13 SP - 1026 PY - 1996/01/01

Cubic phase GaN: correlation between growth kinetics and material quality

@article{ author = { O. Brandt and H. Yang and M. Ramsteiner and J. Menniger and K. H. Ploog }, title = { Cubic phase GaN: correlation between growth kinetics and material quality }, journal = { Proceedings of the 22nd International Symposium on Compound Semiconductors; edited by J.-C. Woo and Y.S. Park, IOP Conf. Ser. }, volume = { 145 }, year = { 1996 }, pages = { 33 } }

TY - JOUR AU - O. Brandt AU - H. Yang AU - M. Ramsteiner AU - J. Menniger AU - K. H. Ploog TI - Cubic phase GaN: correlation between growth kinetics and material quality JF - Proceedings of the 22nd International Symposium on Compound Semiconductors; edited by J.-C. Woo and Y.S. Park, IOP Conf. Ser. JA - Proc. ISCS 22 J1 - - VL - 145 SP - 33 PY - 1996/01/01

High p-type conductivity in cubic GaN/GaAs(113)A by using Be as acceptor and O as codopant

@article{ author = { O. Brandt and H. Yang and H. Kostial and K. Ploog }, title = { High p-type conductivity in cubic GaN/GaAs(113)A by using Be as acceptor and O as codopant }, journal = { Applied Physics Letters }, volume = { 69 }, year = { 1996 }, pages = { 2707 } }

TY - JOUR AU - O. Brandt AU - H. Yang AU - H. Kostial AU - K. Ploog TI - High p-type conductivity in cubic GaN/GaAs(113)A by using Be as acceptor and O as codopant JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 69 SP - 2707 PY - 1996/01/01

Growth kinetics of cubic GaN on (001) GaAs and its impact on crystal quality

@article{ author = { O. Brandt and H. Yang and K. Ploog }, title = { Growth kinetics of cubic GaN on (001) GaAs and its impact on crystal quality }, journal = { Proceedings of the International Conference on Semiconductor Heteroepitaxy; edited by B. Gil and R.-L. Aulomnard (World Scientific, Singapore, 1996) }, volume = { }, year = { 1996 }, pages = { 250 } }

TY - JOUR AU - O. Brandt AU - H. Yang AU - K. Ploog TI - Growth kinetics of cubic GaN on (001) GaAs and its impact on crystal quality JF - Proceedings of the International Conference on Semiconductor Heteroepitaxy; edited by B. Gil and R.-L. Aulomnard (World Scientific, Singapore, 1996) JA - Proc. ICSH J1 - - VL - SP - 250 PY - 1996/01/01

Surface kinetics of zincblende (001) GaN

@article{ author = { O. Brandt and H. Yang and K. Ploog }, title = { Surface kinetics of zincblende (001) GaN }, journal = { Physical Review B: Solid State }, volume = { 54 }, year = { 1996 }, pages = { 4432 } }

TY - JOUR AU - O. Brandt AU - H. Yang AU - K. Ploog TI - Surface kinetics of zincblende (001) GaN JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 54 SP - 4432 PY - 1996/01/01

Impact of recombination centers on the spontaneous emission of semiconductors under steady-state and transient conditions

@article{ author = { O. Brandt and H. Yang and K. Ploog }, title = { Impact of recombination centers on the spontaneous emission of semiconductors under steady-state and transient conditions }, journal = { Physical Review B: Solid State }, volume = { 54 }, year = { 1996 }, pages = { R5215 } }

TY - JOUR AU - O. Brandt AU - H. Yang AU - K. Ploog TI - Impact of recombination centers on the spontaneous emission of semiconductors under steady-state and transient conditions JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 54 SP - R5215 PY - 1996/01/01

Growth of cubic GaN on (001)GaAs

@article{ author = { O. Brandt and H. Yang and A. Trampert and K. H. Ploog }, title = { Growth of cubic GaN on (001)GaAs }, journal = { Gallium Nitride and Related Materials; edited by F. A. Ponce, R. D. Dupuis, S. Nakamura, and J. A. Edmond, Mater. Res. Soc. Proc. Vol. 395 (MRS, Pittsburgh, 1996) }, volume = { }, year = { 1996 }, pages = { 27 } }

TY - JOUR AU - O. Brandt AU - H. Yang AU - A. Trampert AU - K. H. Ploog TI - Growth of cubic GaN on (001)GaAs JF - Gallium Nitride and Related Materials; edited by F. A. Ponce, R. D. Dupuis, S. Nakamura, and J. A. Edmond, Mater. Res. Soc. Proc. Vol. 395 (MRS, Pittsburgh, 1996) JA - Proc. MRS 395 J1 - - VL - SP - 27 PY - 1996/01/01

Kinematical RHEED simulation of different structure models for the (311)A GaAs surface

@article{ author = { W. Braun and O. Brandt and M. Wassermeier and L. Däweritz and K. H. Ploog }, title = { Kinematical RHEED simulation of different structure models for the (311)A GaAs surface }, journal = { Applied Surface Science }, volume = { 104/105 }, year = { 1996 }, pages = { 35 } }

TY - JOUR AU - W. Braun AU - O. Brandt AU - M. Wassermeier AU - L. Däweritz AU - K. H. Ploog TI - Kinematical RHEED simulation of different structure models for the (311)A GaAs surface JF - Applied Surface Science JA - Appl. Surf. Sci. J1 - ASS VL - 104/105 SP - 35 PY - 1996/01/01

Anderson localisation in anisotropic systems at an arbitrary orientation of the magnetic field

@article{ author = { V.V. Bryksin and P. Kleinert }, title = { Anderson localisation in anisotropic systems at an arbitrary orientation of the magnetic field }, journal = { Zeitschrift für Physik B }, volume = { 101 }, year = { 1996 }, pages = { 91 } }

TY - JOUR AU - V.V. Bryksin AU - P. Kleinert TI - Anderson localisation in anisotropic systems at an arbitrary orientation of the magnetic field JF - Zeitschrift für Physik B JA - Z. Phys. B J1 - ZPB VL - 101 SP - 91 PY - 1996/01/01

Microprobe techniques in SAW measurements

@article{ author = { E. Chilla and T. Hesjedal and H.-J. Fröhlich }, title = { Microprobe techniques in SAW measurements }, journal = { Proceedings of the 11th International Microwave Conference (MIKON-96); (Telecom Res. Inst., Warsaw, 1996) }, volume = { }, year = { 1996 }, pages = { 107 } }

TY - JOUR AU - E. Chilla AU - T. Hesjedal AU - H.-J. Fröhlich TI - Microprobe techniques in SAW measurements JF - Proceedings of the 11th International Microwave Conference (MIKON-96); (Telecom Res. Inst., Warsaw, 1996) JA - Proc. IMC XI J1 - - VL - SP - 107 PY - 1996/01/01

Microprobe techniques in SAW measurements

@article{ author = { E. Chilla and T. Hesjedal and H.-J. Fröhlich }, title = { Microprobe techniques in SAW measurements }, journal = { Archives of Acoustics }, volume = { 21 }, year = { 1996 }, pages = { 195 } }

TY - JOUR AU - E. Chilla AU - T. Hesjedal AU - H.-J. Fröhlich TI - Microprobe techniques in SAW measurements JF - Archives of Acoustics JA - Archives Acoustics J1 - ArAc VL - 21 SP - 195 PY - 1996/01/01

Time-resolved transport between resonantly coupled Landau levels in semiconductor superlattices

@article{ author = { F. Claro and J. F. Weisz and W. Müller and K. v. Klitzing and H.T. Grahn and K. Ploog }, title = { Time-resolved transport between resonantly coupled Landau levels in semiconductor superlattices }, journal = { Physical Review B: Solid State }, volume = { 53 }, year = { 1996 }, pages = { 7970 } }

TY - JOUR AU - F. Claro AU - J. F. Weisz AU - W. Müller AU - K. v. Klitzing AU - H.T. Grahn AU - K. Ploog TI - Time-resolved transport between resonantly coupled Landau levels in semiconductor superlattices JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 53 SP - 7970 PY - 1996/01/01

Tailoring of Si doping-layers in GaAs during molecular beam epitaxy

@article{ author = { L. Däweritz and H. Kostial and M. Ramsteiner and R. Klann and P. Schützendübe and K. Stahrenberg and J. Behrend and R. Hey and M. Maier and K. Ploog }, title = { Tailoring of Si doping-layers in GaAs during molecular beam epitaxy }, journal = { Physica Status Solidi B }, volume = { 194 }, year = { 1996 }, pages = { 127 } }

TY - JOUR AU - L. Däweritz AU - H. Kostial AU - M. Ramsteiner AU - R. Klann AU - P. Schützendübe AU - K. Stahrenberg AU - J. Behrend AU - R. Hey AU - M. Maier AU - K. Ploog TI - Tailoring of Si doping-layers in GaAs during molecular beam epitaxy JF - Physica Status Solidi B JA - Phys. Status Solidi B J1 - PSSB VL - 194 SP - 127 PY - 1996/01/01

Real-time study of dopant incorporation and segregation during MBE growth of GaAs(001):Si

@article{ author = { L. Däweritz and P. Schützendübe and K. Stahrenberg and K. Maier and K. Ploog }, title = { Real-time study of dopant incorporation and segregation during MBE growth of GaAs(001):Si }, journal = { Proceedings of the 22nd International Symposium on Compound Semiconductors; edited by J.-C. Woo and Y.S. Park, IOP Conf. Ser. }, volume = { 145 }, year = { 1996 }, pages = { 51 } }

TY - JOUR AU - L. Däweritz AU - P. Schützendübe AU - K. Stahrenberg AU - K. Maier AU - K. Ploog TI - Real-time study of dopant incorporation and segregation during MBE growth of GaAs(001):Si JF - Proceedings of the 22nd International Symposium on Compound Semiconductors; edited by J.-C. Woo and Y.S. Park, IOP Conf. Ser. JA - Proc. ISCS 22 J1 - - VL - 145 SP - 51 PY - 1996/01/01

Intersubband electron transitions in -doped GaAs induced by acoustical phonons

@article{ author = { B. Danilchenko and A. Klimashov and O. Sarbey and M. Asche and R. Hey }, title = { Intersubband electron transitions in -doped GaAs induced by acoustical phonons }, journal = { Proceedings of the 23rd International Conference on the Physics of Semiconductors; edited by M. Scheffler and R. Zimmermann (World Scientific, Singapore, 1996) }, volume = { }, year = { 1996 }, pages = { 2339 } }

TY - JOUR AU - B. Danilchenko AU - A. Klimashov AU - O. Sarbey AU - M. Asche AU - R. Hey TI - Intersubband electron transitions in -doped GaAs induced by acoustical phonons JF - Proceedings of the 23rd International Conference on the Physics of Semiconductors; edited by M. Scheffler and R. Zimmermann (World Scientific, Singapore, 1996) JA - Proc. ICPS 23 J1 - - VL - SP - 2339 PY - 1996/01/01

Correlations and disorder in arrays of magnetically-coupled superconductor rings

@article{ author = { D. Davidovic and S. Kumar and D. R. Reich and J. Siegel and S. B. Field and R. Tiberio and R. Hey and K. Ploog }, title = { Correlations and disorder in arrays of magnetically-coupled superconductor rings }, journal = { Physical Review Letters }, volume = { 76 }, year = { 1996 }, pages = { 815 } }

TY - JOUR AU - D. Davidovic AU - S. Kumar AU - D. R. Reich AU - J. Siegel AU - S. B. Field AU - R. Tiberio AU - R. Hey AU - K. Ploog TI - Correlations and disorder in arrays of magnetically-coupled superconductor rings JF - Physical Review Letters JA - Phys. Rev. Lett. J1 - PRL VL - 76 SP - 815 PY - 1996/01/01

Electronic structure of cubic gallium nitride films grown on GaAs

@article{ author = { S. A. Ding and G. Neuhold and J. H. Weaver and P. Häberle and K. Horn and O. Brandt and H. Yang and K. Ploog }, title = { Electronic structure of cubic gallium nitride films grown on GaAs }, journal = { Journal of Vacuum Science and Technology A }, volume = { 14 }, year = { 1996 }, pages = { 819 } }

TY - JOUR AU - S. A. Ding AU - G. Neuhold AU - J. H. Weaver AU - P. Häberle AU - K. Horn AU - O. Brandt AU - H. Yang AU - K. Ploog TI - Electronic structure of cubic gallium nitride films grown on GaAs JF - Journal of Vacuum Science and Technology A JA - J. Vac. Sci. Technol. A J1 - JVSTA VL - 14 SP - 819 PY - 1996/01/01

Thermally activated dissipative conductivity in the fractional quantum Hall effect regime

@article{ author = { S. I. Dorozhkin and M. O. Dorokhova and R. J. Haug and K. von Klitzing and K. Ploog }, title = { Thermally activated dissipative conductivity in the fractional quantum Hall effect regime }, journal = { Journal of Experimental and Therotical Physics Letters }, volume = { 63 }, year = { 1996 }, pages = { 76 } }

TY - JOUR AU - S. I. Dorozhkin AU - M. O. Dorokhova AU - R. J. Haug AU - K. von Klitzing AU - K. Ploog TI - Thermally activated dissipative conductivity in the fractional quantum Hall effect regime JF - Journal of Experimental and Therotical Physics Letters JA - JETP Lett. J1 - JETPL VL - 63 SP - 76 PY - 1996/01/01

Visualization of current filaments in n-GaAs by photoluminescence quenching

@article{ author = { W. Eberle and J. Hirschinger and U. Margull and W. Prettl and V. Novak and H. Kostial }, title = { Visualization of current filaments in n-GaAs by photoluminescence quenching }, journal = { Applied Physics Letters }, volume = { 68 }, year = { 1996 }, pages = { 3329 } }

TY - JOUR AU - W. Eberle AU - J. Hirschinger AU - U. Margull AU - W. Prettl AU - V. Novak AU - H. Kostial TI - Visualization of current filaments in n-GaAs by photoluminescence quenching JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 68 SP - 3329 PY - 1996/01/01

System zur drahtlosen Übertragung von Audiosignalen mit sehr geringer Sendeleistung

@article{ author = { J. Enderlein and H.-J. Fröhlich and E. Chilla and J. Schönberg and S. Bechstein }, title = { System zur drahtlosen Übertragung von Audiosignalen mit sehr geringer Sendeleistung }, journal = { Fortschritte der Akustik -- DAGA 1996; edited by T. Portele und W. Hess (DEGA, Oldenburg, 1996) }, volume = { }, year = { 1996 }, pages = { 448 } }

TY - JOUR AU - J. Enderlein AU - H.-J. Fröhlich AU - E. Chilla AU - J. Schönberg AU - S. Bechstein TI - System zur drahtlosen Übertragung von Audiosignalen mit sehr geringer Sendeleistung JF - Fortschritte der Akustik -- DAGA 1996; edited by T. Portele und W. Hess (DEGA, Oldenburg, 1996) JA - Proc. DAGA 1996 J1 - - VL - SP - 448 PY - 1996/01/01

Two channel SAW sensor signal transmission system

@article{ author = { J. Enderlein and S. Bechstein and J. Schönberg and E. Chilla and H.-J. Fröhlich }, title = { Two channel SAW sensor signal transmission system }, journal = { Proceedings of Eurosensors X; edited by R. Puers (KU, Leuven, 1996) }, volume = { }, year = { 1996 }, pages = { 877 } }

TY - JOUR AU - J. Enderlein AU - S. Bechstein AU - J. Schönberg AU - E. Chilla AU - H.-J. Fröhlich TI - Two channel SAW sensor signal transmission system JF - Proceedings of Eurosensors X; edited by R. Puers (KU, Leuven, 1996) JA - Proc. ES X J1 - - VL - SP - 877 PY - 1996/01/01

Two channel SAW spread spectrum transmission system for audio signals

@article{ author = { J. Enderlein and S. Bechstein and E. Chilla and H.-J. Fröhlich }, title = { Two channel SAW spread spectrum transmission system for audio signals }, journal = { Proceedings of the 1996 IEEE Ultrasonics Symposium; (IEEE, New York, 1996) }, volume = { }, year = { 1996 }, pages = { 43 } }

TY - JOUR AU - J. Enderlein AU - S. Bechstein AU - E. Chilla AU - H.-J. Fröhlich TI - Two channel SAW spread spectrum transmission system for audio signals JF - Proceedings of the 1996 IEEE Ultrasonics Symposium; (IEEE, New York, 1996) JA - Proc. IEEEUS 1996 J1 - - VL - SP - 43 PY - 1996/01/01

New concept for reduction of impurity scattering in remotely doped GaAs quantum wells

@article{ author = { K.-J. Friedland and R. Hey and H. Kostial and R. Klann and K. Ploog }, title = { New concept for reduction of impurity scattering in remotely doped GaAs quantum wells }, journal = { Physical Review Letters }, volume = { 77 }, year = { 1996 }, pages = { 4616 } }

TY - JOUR AU - K.-J. Friedland AU - R. Hey AU - H. Kostial AU - R. Klann AU - K. Ploog TI - New concept for reduction of impurity scattering in remotely doped GaAs quantum wells JF - Physical Review Letters JA - Phys. Rev. Lett. J1 - PRL VL - 77 SP - 4616 PY - 1996/01/01

Miniband formation in graded-gap superlattices

@article{ author = { H.T. Grahn and L. Schrottke and K. H. Ploog and F. Agullo-Rueda and U. Behn }, title = { Miniband formation in graded-gap superlattices }, journal = { Proceedings of the 22nd International Symposium on Compound Semiconductors; edited by J.-C. Woo and Y.S. Park, IOP Conf. Ser. }, volume = { 145 }, year = { 1996 }, pages = { 1213 } }

TY - JOUR AU - H.T. Grahn AU - L. Schrottke AU - K. H. Ploog AU - F. Agullo-Rueda AU - U. Behn TI - Miniband formation in graded-gap superlattices JF - Proceedings of the 22nd International Symposium on Compound Semiconductors; edited by J.-C. Woo and Y.S. Park, IOP Conf. Ser. JA - Proc. ISCS 22 J1 - - VL - 145 SP - 1213 PY - 1996/01/01

Room temperature current self-oscillations in doped semiconductor superlattices

@article{ author = { H.T. Grahn and J. Kastrup and R. Klann and K. H. Ploog and H. Asai }, title = { Room temperature current self-oscillations in doped semiconductor superlattices }, journal = { Proceedings of the 23rd International Conference on the Physics of Semiconductors; edited by M. Scheffler and R. Zimmermann (World Scientific, Singapore, 1996) }, volume = { }, year = { 1996 }, pages = { 1671 } }

TY - JOUR AU - H.T. Grahn AU - J. Kastrup AU - R. Klann AU - K. H. Ploog AU - H. Asai TI - Room temperature current self-oscillations in doped semiconductor superlattices JF - Proceedings of the 23rd International Conference on the Physics of Semiconductors; edited by M. Scheffler and R. Zimmermann (World Scientific, Singapore, 1996) JA - Proc. ICPS 23 J1 - - VL - SP - 1671 PY - 1996/01/01

Strong alignment of self-assembling InP quantum dots

@article{ author = { K. Häusler and E. Eberl and F. Noll and A. Trampert }, title = { Strong alignment of self-assembling InP quantum dots }, journal = { Physical Review B: Solid State }, volume = { 54 }, year = { 1996 }, pages = { 4913 } }

TY - JOUR AU - K. Häusler AU - E. Eberl AU - F. Noll AU - A. Trampert TI - Strong alignment of self-assembling InP quantum dots JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 54 SP - 4913 PY - 1996/01/01

Application of lift-off low-temperature grown GaAs on transparent substrates for THz signal generation

@article{ author = { H.-M. Heiliger and M. Voßebürger and H. G. Roskos and H. Kurz and R. Hey and K. H. Ploog }, title = { Application of lift-off low-temperature grown GaAs on transparent substrates for THz signal generation }, journal = { Applied Physics Letters }, volume = { 69 }, year = { 1996 }, pages = { 2903 } }

TY - JOUR AU - H.-M. Heiliger AU - M. Voßebürger AU - H. G. Roskos AU - H. Kurz AU - R. Hey AU - K. H. Ploog TI - Application of lift-off low-temperature grown GaAs on transparent substrates for THz signal generation JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 69 SP - 2903 PY - 1996/01/01

Transport properties of the composite fermions in narrow cross junctions

@article{ author = { J. Herfort and Y. Takagaki and R. Hey and K.-J. Friedland and K. Ploog and D. K. Maude and J. C. Portal and J. Takahara and K. Gamo }, title = { Transport properties of the composite fermions in narrow cross junctions }, journal = { Surface Science }, volume = { 361/362 }, year = { 1996 }, pages = { 63 } }

TY - JOUR AU - J. Herfort AU - Y. Takagaki AU - R. Hey AU - K.-J. Friedland AU - K. Ploog AU - D. K. Maude AU - J. C. Portal AU - J. Takahara AU - K. Gamo TI - Transport properties of the composite fermions in narrow cross junctions JF - Surface Science JA - Surf. Sci. J1 - SuSc VL - 361/362 SP - 63 PY - 1996/01/01

Temperature dependence of the bend resistance of composite fermions in narrow cross junctions

@article{ author = { J. Herfort and K.-J. Friedland and R. Hey and K. Ploog and Y. Takagaki and J. Takahara and K. Gamo }, title = { Temperature dependence of the bend resistance of composite fermions in narrow cross junctions }, journal = { Physica B: Condensed Matter }, volume = { 227 }, year = { 1996 }, pages = { 170 } }

TY - JOUR AU - J. Herfort AU - K.-J. Friedland AU - R. Hey AU - K. Ploog AU - Y. Takagaki AU - J. Takahara AU - K. Gamo TI - Temperature dependence of the bend resistance of composite fermions in narrow cross junctions JF - Physica B: Condensed Matter JA - Physica B J1 - PhB VL - 227 SP - 170 PY - 1996/01/01

Wellenfelder in Interdigitalwandlern und ihre Abstrahlung

@article{ author = { T. Hesjedal and Chilla und H.-J. Fröhlich }, title = { Wellenfelder in Interdigitalwandlern und ihre Abstrahlung }, journal = { Fortschritte der Akustik -- DAGA 1996; edited by T. Portele und W. Hess (DEGA, Oldenburg, 1996) }, volume = { }, year = { 1996 }, pages = { 434 } }

TY - JOUR AU - T. Hesjedal AU - Chilla und H.-J. Fröhlich TI - Wellenfelder in Interdigitalwandlern und ihre Abstrahlung JF - Fortschritte der Akustik -- DAGA 1996; edited by T. Portele und W. Hess (DEGA, Oldenburg, 1996) JA - Proc. DAGA 1996 J1 - - VL - SP - 434 PY - 1996/01/01

Scanning acoustic force microscope measurements on interdigital transducers

@article{ author = { T. Hesjedal and E. Chilla and H.-J. Fröhlich }, title = { Scanning acoustic force microscope measurements on interdigital transducers }, journal = { Acta Physica Slovaca }, volume = { 46 }, year = { 1996 }, pages = { 701 } }

TY - JOUR AU - T. Hesjedal AU - E. Chilla AU - H.-J. Fröhlich TI - Scanning acoustic force microscope measurements on interdigital transducers JF - Acta Physica Slovaca JA - Acta Physica Slovaca J1 - APS VL - 46 SP - 701 PY - 1996/01/01

Direct visualization of the oscillation of Au(111) surface atoms

@article{ author = { T. Hesjedal and E. Chilla and H.-J. Fröhlich }, title = { Direct visualization of the oscillation of Au(111) surface atoms }, journal = { Applied Physics Letters }, volume = { 69 }, year = { 1996 }, pages = { 354 } }

TY - JOUR AU - T. Hesjedal AU - E. Chilla AU - H.-J. Fröhlich TI - Direct visualization of the oscillation of Au(111) surface atoms JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 69 SP - 354 PY - 1996/01/01

Determination of SAW phase velocities on the nanoscale

@article{ author = { T. Hesjedal and E. Chilla and H.-J. Fröhlich }, title = { Determination of SAW phase velocities on the nanoscale }, journal = { Proceedings of the 1996 IEEE Ultrasonics Symposium; (IEEE, New York, 1996) }, volume = { }, year = { 1996 }, pages = { 811 } }

TY - JOUR AU - T. Hesjedal AU - E. Chilla AU - H.-J. Fröhlich TI - Determination of SAW phase velocities on the nanoscale JF - Proceedings of the 1996 IEEE Ultrasonics Symposium; (IEEE, New York, 1996) JA - Proc. IEEEUS 1996 J1 - - VL - SP - 811 PY - 1996/01/01

Submicron IDT wave field investigation by scanning acoustic force microscopy

@article{ author = { T. Hesjedal and E. Chilla and H.-J. Fröhlich }, title = { Submicron IDT wave field investigation by scanning acoustic force microscopy }, journal = { Proceedings of the 1996 IEEE Ultrasonics Symposium; (IEEE, New York, 1996) }, volume = { }, year = { 1996 }, pages = { 815 } }

TY - JOUR AU - T. Hesjedal AU - E. Chilla AU - H.-J. Fröhlich TI - Submicron IDT wave field investigation by scanning acoustic force microscopy JF - Proceedings of the 1996 IEEE Ultrasonics Symposium; (IEEE, New York, 1996) JA - Proc. IEEEUS 1996 J1 - - VL - SP - 815 PY - 1996/01/01

Current self-oscillations in photoexcited type-II GaAs-AlAs superlattices

@article{ author = { M. Hosoda and H. Mimura and N. Ohtani and K. Tominaga and T. Watanabe and K. Fujiwara and H.T. Grahn }, title = { Current self-oscillations in photoexcited type-II GaAs-AlAs superlattices }, journal = { Applied Physics Letters }, volume = { 69 }, year = { 1996 }, pages = { 500 } }

TY - JOUR AU - M. Hosoda AU - H. Mimura AU - N. Ohtani AU - K. Tominaga AU - T. Watanabe AU - K. Fujiwara AU - H.T. Grahn TI - Current self-oscillations in photoexcited type-II GaAs-AlAs superlattices JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 69 SP - 500 PY - 1996/01/01

Collective effects of excitons in multiple quantum well Bragg and anti-Bragg-structures

@article{ author = { M. Hübner and J. Kuhl and T. Stroucken and A. Knorr and S. W. Koch and R. Hey and K. Ploog }, title = { Collective effects of excitons in multiple quantum well Bragg and anti-Bragg-structures }, journal = { Physical Review Letters }, volume = { 76 }, year = { 1996 }, pages = { 4199 } }

TY - JOUR AU - M. Hübner AU - J. Kuhl AU - T. Stroucken AU - A. Knorr AU - S. W. Koch AU - R. Hey AU - K. Ploog TI - Collective effects of excitons in multiple quantum well Bragg and anti-Bragg-structures JF - Physical Review Letters JA - Phys. Rev. Lett. J1 - PRL VL - 76 SP - 4199 PY - 1996/01/01

Exciton localization, photoluminescence spectra, and interface roughness in thin quantum wells

@article{ author = { U. Jahn and S. H. Kwok and M. Ramsteiner and R. Hey and H.T. Grahn and E. Runge }, title = { Exciton localization, photoluminescence spectra, and interface roughness in thin quantum wells }, journal = { Physical Review B: Solid State }, volume = { 54 }, year = { 1996 }, pages = { 2733 } }

TY - JOUR AU - U. Jahn AU - S. H. Kwok AU - M. Ramsteiner AU - R. Hey AU - H.T. Grahn AU - E. Runge TI - Exciton localization, photoluminescence spectra, and interface roughness in thin quantum wells JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 54 SP - 2733 PY - 1996/01/01

Interface roughness of quantum wells — A scanning electron microscopy and cathodoluminescence study

@article{ author = { U. Jahn and J. Menniger and R. Hey and S. H. Kwok and K. Fujiwara }, title = { Interface roughness of quantum wells — A scanning electron microscopy and cathodoluminescence study }, journal = { Proceedings of the 9th International Conference on Microscopy of Semiconducting Materials; edited by A. G. Cullis and A. E. Stanton-Bevan, IOP Conf. Ser. }, volume = { 146 }, year = { 1996 }, pages = { 733 } }

TY - JOUR AU - U. Jahn AU - J. Menniger AU - R. Hey AU - S. H. Kwok AU - K. Fujiwara TI - Interface roughness of quantum wells — A scanning electron microscopy and cathodoluminescence study JF - Proceedings of the 9th International Conference on Microscopy of Semiconducting Materials; edited by A. G. Cullis and A. E. Stanton-Bevan, IOP Conf. Ser. JA - Proc. ICMSM 9 J1 - - VL - 146 SP - 733 PY - 1996/01/01

Identification of optical transitions in cubic GaN by spatially resolved cathodoluminescence

@article{ author = { U. Jahn and J. Menniger and O. Brandt and H. Yang and K. H. Ploog }, title = { Identification of optical transitions in cubic GaN by spatially resolved cathodoluminescence }, journal = { Proceedings of the 23rd International Conference on the Physics of Semiconductors; edited by M. Scheffler and R. Zimmermann (World Scientific, Singapore, 1996) }, volume = { }, year = { 1996 }, pages = { 2857 } }

TY - JOUR AU - U. Jahn AU - J. Menniger AU - O. Brandt AU - H. Yang AU - K. H. Ploog TI - Identification of optical transitions in cubic GaN by spatially resolved cathodoluminescence JF - Proceedings of the 23rd International Conference on the Physics of Semiconductors; edited by M. Scheffler and R. Zimmermann (World Scientific, Singapore, 1996) JA - Proc. ICPS 23 J1 - - VL - SP - 2857 PY - 1996/01/01

Lateral variations of the quantum well confinement energy reflected by SEM-cathodoluminescence

@article{ author = { U. Jahn and J. Menniger and R. Hey and B. Jenichen and E. Runge and H.T. Grahn }, title = { Lateral variations of the quantum well confinement energy reflected by SEM-cathodoluminescence }, journal = { Materials Science and Engineering B }, volume = { 42 }, year = { 1996 }, pages = { 133 } }

TY - JOUR AU - U. Jahn AU - J. Menniger AU - R. Hey AU - B. Jenichen AU - E. Runge AU - H.T. Grahn TI - Lateral variations of the quantum well confinement energy reflected by SEM-cathodoluminescence JF - Materials Science and Engineering B JA - Mater. Sci. Eng. B J1 - MSEB VL - 42 SP - 133 PY - 1996/01/01

Optical anisotropy in superlattices as a consequence of dielectric mismatch

@article{ author = { E. Jahne }, title = { Optical anisotropy in superlattices as a consequence of dielectric mismatch }, journal = { Physica Status Solidi B }, volume = { 194 }, year = { 1996 }, pages = { 279 } }

TY - JOUR AU - E. Jahne TI - Optical anisotropy in superlattices as a consequence of dielectric mismatch JF - Physica Status Solidi B JA - Phys. Status Solidi B J1 - PSSB VL - 194 SP - 279 PY - 1996/01/01

Interface roughness of InAs/AlSb superlattices investigated by X-ray scattering

@article{ author = { B. Jenichen and S. A. Stepanov and B. Brar and H. Kroemer }, title = { Interface roughness of InAs/AlSb superlattices investigated by X-ray scattering }, journal = { Journal of Applied Physics }, volume = { 79 }, year = { 1996 }, pages = { 120 } }

TY - JOUR AU - B. Jenichen AU - S. A. Stepanov AU - B. Brar AU - H. Kroemer TI - Interface roughness of InAs/AlSb superlattices investigated by X-ray scattering JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 79 SP - 120 PY - 1996/01/01

AlAs/GaAs layered structures as substrates for SAW applications

@article{ author = { F. Jungnickel and S. Makarov and E. Chilla and H.-J. Fröhlich }, title = { AlAs/GaAs layered structures as substrates for SAW applications }, journal = { Proceedings of Eurosensors X; edited by R. Puers (KU, Leuven, 1996) }, volume = { }, year = { 1996 }, pages = { 1397 } }

TY - JOUR AU - F. Jungnickel AU - S. Makarov AU - E. Chilla AU - H.-J. Fröhlich TI - AlAs/GaAs layered structures as substrates for SAW applications JF - Proceedings of Eurosensors X; edited by R. Puers (KU, Leuven, 1996) JA - Proc. ES X J1 - - VL - SP - 1397 PY - 1996/01/01

Formation times of electric field domains in doped GaAs-AlAs superlattices

@article{ author = { J. Kastrup and F. Prengel and H.T. Grahn and K. Ploog and E. Schöll }, title = { Formation times of electric field domains in doped GaAs-AlAs superlattices }, journal = { Physical Review B: Solid State }, volume = { 53 }, year = { 1996 }, pages = { 1502 } }

TY - JOUR AU - J. Kastrup AU - F. Prengel AU - H.T. Grahn AU - K. Ploog AU - E. Schöll TI - Formation times of electric field domains in doped GaAs-AlAs superlattices JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 53 SP - 1502 PY - 1996/01/01

Oscillating electric field domains in GaAs-AlAs superlattices

@article{ author = { J. Kastrup and H.T. Grahn and K. Ploog and R. Merlin }, title = { Oscillating electric field domains in GaAs-AlAs superlattices }, journal = { Solid-State Electronics }, volume = { 40 }, year = { 1996 }, pages = { 157 } }

TY - JOUR AU - J. Kastrup AU - H.T. Grahn AU - K. Ploog AU - R. Merlin TI - Oscillating electric field domains in GaAs-AlAs superlattices JF - Solid-State Electronics JA - Solid-State Electron. J1 - SSE VL - 40 SP - 157 PY - 1996/01/01

Dynamics of near-bandedge photolumimescence emission in cubic GaN

@article{ author = { R. Klann and O. Brandt and H. Yang and H.T. Grahn and K. H. Ploog }, title = { Dynamics of near-bandedge photolumimescence emission in cubic GaN }, journal = { Proceedings of the 1st International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED); edited by A. Yoshikawa, K. Kishino, M. Kobayashi, and T. Yasuda (Ohmsha Ltd., Tokyo, 1996) }, volume = { }, year = { 1996 }, pages = { 198 } }

TY - JOUR AU - R. Klann AU - O. Brandt AU - H. Yang AU - H.T. Grahn AU - K. H. Ploog TI - Dynamics of near-bandedge photolumimescence emission in cubic GaN JF - Proceedings of the 1st International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED); edited by A. Yoshikawa, K. Kishino, M. Kobayashi, and T. Yasuda (Ohmsha Ltd., Tokyo, 1996) JA - Proc. ISBLLED 1996 J1 - - VL - SP - 198 PY - 1996/01/01

Recombination dynamics of near-bandedge emission in cubic GaN

@article{ author = { R. Klann and O. Brandt and H. Yang and H.T. Grahn and K. H. Ploog }, title = { Recombination dynamics of near-bandedge emission in cubic GaN }, journal = { Ultrafast Processes in Spectroscopy; edited by O. Svelto, S. De Silvestri, and G. Denardo (Plenum, New York, 1996) }, volume = { }, year = { 1996 }, pages = { 259 } }

TY - JOUR AU - R. Klann AU - O. Brandt AU - H. Yang AU - H.T. Grahn AU - K. H. Ploog TI - Recombination dynamics of near-bandedge emission in cubic GaN JF - Ultrafast Processes in Spectroscopy; edited by O. Svelto, S. De Silvestri, and G. Denardo (Plenum, New York, 1996) JA - UFPS J1 - - VL - SP - 259 PY - 1996/01/01

Spectral function of the disordered Tominaga-Luttinger model

@article{ author = { P. Kleinert }, title = { Spectral function of the disordered Tominaga-Luttinger model }, journal = { Journal of Physics A: Mathematical and General }, volume = { 29 }, year = { 1996 }, pages = { 2389 } }

TY - JOUR AU - P. Kleinert TI - Spectral function of the disordered Tominaga-Luttinger model JF - Journal of Physics A: Mathematical and General JA - J. Phys. A J1 - JPA VL - 29 SP - 2389 PY - 1996/01/01

Semiconductor epitaxial and nonepitaxial overgrowth from solutions

@article{ author = { R. Köhler and H. Raidt and F. Banhart and B. Jenichen and A. Gutjahr and M. Konuma and I. Silier and E. Bauser }, title = { Semiconductor epitaxial and nonepitaxial overgrowth from solutions }, journal = { Evolution of Epitaxial Structure and Morphology; edited by A. Zangwill, D. Jesson, D. Chambliss, and R. Clarke, Mater. Res. Soc. Proc. Vol. 399 (MRS, Pittsburgh, 1996) }, volume = { }, year = { 1996 }, pages = { 189 } }

TY - JOUR AU - R. Köhler AU - H. Raidt AU - F. Banhart AU - B. Jenichen AU - A. Gutjahr AU - M. Konuma AU - I. Silier AU - E. Bauser TI - Semiconductor epitaxial and nonepitaxial overgrowth from solutions JF - Evolution of Epitaxial Structure and Morphology; edited by A. Zangwill, D. Jesson, D. Chambliss, and R. Clarke, Mater. Res. Soc. Proc. Vol. 399 (MRS, Pittsburgh, 1996) JA - Proc. MRS 399 J1 - - VL - SP - 189 PY - 1996/01/01

Liquid phase epitaxy of silicon

@article{ author = { R. Köhler and H. Raidt and F. Banhart and B. Jenichen and A. Gutjahr and M. Konuma and I. Silier and E. Bauser }, title = { Liquid phase epitaxy of silicon }, journal = { Proceedings of the 2nd International Symposium on Advanced Science and Technology of Silicon Materials; edited by M. Umeno (145th Comm. Japan Soc. Promotion Sci./JSPS, 1996) }, volume = { }, year = { 1996 }, pages = { 431 } }

TY - JOUR AU - R. Köhler AU - H. Raidt AU - F. Banhart AU - B. Jenichen AU - A. Gutjahr AU - M. Konuma AU - I. Silier AU - E. Bauser TI - Liquid phase epitaxy of silicon JF - Proceedings of the 2nd International Symposium on Advanced Science and Technology of Silicon Materials; edited by M. Umeno (145th Comm. Japan Soc. Promotion Sci./JSPS, 1996) JA - Proc. ISASTSM 2 J1 - - VL - SP - 431 PY - 1996/01/01

Deep-level planar doping of titanium in GaAs

@article{ author = { P. Krispin and H. Kostial }, title = { Deep-level planar doping of titanium in GaAs }, journal = { Physica Status Solidi B }, volume = { 194 }, year = { 1996 }, pages = { 145 } }

TY - JOUR AU - P. Krispin AU - H. Kostial TI - Deep-level planar doping of titanium in GaAs JF - Physica Status Solidi B JA - Phys. Status Solidi B J1 - PSSB VL - 194 SP - 145 PY - 1996/01/01

Influence of MBE growth conditions on deep electronic states at the inverted GaAs/AlAs interface

@article{ author = { P. Krispin and R. Hey and H. Kostial }, title = { Influence of MBE growth conditions on deep electronic states at the inverted GaAs/AlAs interface }, journal = { Proceedings of the 9th International Semiconducting and Insulating Materials Conference; edited by C. Fontaine (IEEE, New York, 1996) }, volume = { }, year = { 1996 }, pages = { 287 } }

TY - JOUR AU - P. Krispin AU - R. Hey AU - H. Kostial TI - Influence of MBE growth conditions on deep electronic states at the inverted GaAs/AlAs interface JF - Proceedings of the 9th International Semiconducting and Insulating Materials Conference; edited by C. Fontaine (IEEE, New York, 1996) JA - Proc. ISIMC 9 J1 - - VL - SP - 287 PY - 1996/01/01

Non-equilibrium optical phonon population by sequential resonant tunneling in GaAs-AlAs superlattices

@article{ author = { S. H. Kwok and M. Ramsteiner and D. Bertram and M. Asche and H.T. Grahn and K. Ploog }, title = { Non-equilibrium optical phonon population by sequential resonant tunneling in GaAs-AlAs superlattices }, journal = { Physical Review B: Solid State }, volume = { 53 }, year = { 1996 }, pages = { R7634 } }

TY - JOUR AU - S. H. Kwok AU - M. Ramsteiner AU - D. Bertram AU - M. Asche AU - H.T. Grahn AU - K. Ploog TI - Non-equilibrium optical phonon population by sequential resonant tunneling in GaAs-AlAs superlattices JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 53 SP - R7634 PY - 1996/01/01

Cathodoluminescence imaging of electric-field domains in semiconductor superlattices

@article{ author = { S. H. Kwok and U. Jahn and H. Kostial and J. Menniger and H.T. Grahn and K. Ploog }, title = { Cathodoluminescence imaging of electric-field domains in semiconductor superlattices }, journal = { Solid-State Electronics }, volume = { 40 }, year = { 1996 }, pages = { 527 } }

TY - JOUR AU - S. H. Kwok AU - U. Jahn AU - H. Kostial AU - J. Menniger AU - H.T. Grahn AU - K. Ploog TI - Cathodoluminescence imaging of electric-field domains in semiconductor superlattices JF - Solid-State Electronics JA - Solid-State Electron. J1 - SSE VL - 40 SP - 527 PY - 1996/01/01

Influence of the interface corrugation on the subband dispersions and the optical properties of (113)-oriented GaAs/AlAs superlattices

@article{ author = { W. Langbein and D. Lüerßen and H. Kalt and J. M. Hvam and W. Braun and K. Ploog }, title = { Influence of the interface corrugation on the subband dispersions and the optical properties of (113)-oriented GaAs/AlAs superlattices }, journal = { Physical Review B: Solid State }, volume = { 54 }, year = { 1996 }, pages = { 10784 } }

TY - JOUR AU - W. Langbein AU - D. Lüerßen AU - H. Kalt AU - J. M. Hvam AU - W. Braun AU - K. Ploog TI - Influence of the interface corrugation on the subband dispersions and the optical properties of (113)-oriented GaAs/AlAs superlattices JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 54 SP - 10784 PY - 1996/01/01

Anisotropic quantum boxes in corrugated superlattices

@article{ author = { W. Langbein and D. Lüerßen and H. Kalt and W. Braun and K. Ploog }, title = { Anisotropic quantum boxes in corrugated superlattices }, journal = { Physical Review B: Solid State }, volume = { 53 }, year = { 1996 }, pages = { 15473 } }

TY - JOUR AU - W. Langbein AU - D. Lüerßen AU - H. Kalt AU - W. Braun AU - K. Ploog TI - Anisotropic quantum boxes in corrugated superlattices JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 53 SP - 15473 PY - 1996/01/01

Does the 1.25 eV luminescence of coherently strained InGaAs insertions in GaAs originate from quantum dots?

@article{ author = { J.-L. Lazzari and R. Klann and A. Mazuelas and A. Trampert and M. Wassermeier and O. Brandt and K. H. Ploog }, title = { Does the 1.25 eV luminescence of coherently strained InGaAs insertions in GaAs originate from quantum dots? }, journal = { Optoelectronic Materials: Ordering, Composition Modulation, and Self-Assembled Structures; edited by E. D. Jones, A. Mascarenhas, and P. Petroff, Mater. Res. Soc. Proc. Vol. 417 (MRS, Pittsburgh, 1996) }, volume = { }, year = { 1996 }, pages = { 199 } }

TY - JOUR AU - J.-L. Lazzari AU - R. Klann AU - A. Mazuelas AU - A. Trampert AU - M. Wassermeier AU - O. Brandt AU - K. H. Ploog TI - Does the 1.25 eV luminescence of coherently strained InGaAs insertions in GaAs originate from quantum dots? JF - Optoelectronic Materials: Ordering, Composition Modulation, and Self-Assembled Structures; edited by E. D. Jones, A. Mascarenhas, and P. Petroff, Mater. Res. Soc. Proc. Vol. 417 (MRS, Pittsburgh, 1996) JA - Proc. MRS 417 J1 - - VL - SP - 199 PY - 1996/01/01

Enhancement of electron-phonon interaction in ultra-short period GaAs-AlAs superlattices

@article{ author = { V. G. Litovchenko and D. V. Korbutyak and S. G. Krylyuk and H.T. Grahn and K. H. Ploog }, title = { Enhancement of electron-phonon interaction in ultra-short period GaAs-AlAs superlattices }, journal = { Proceedings of the 23rd International Conference on the Physics of Semiconductors; edited by M. Scheffler and R. Zimmermann (World Scientific, Singapore, 1996) }, volume = { }, year = { 1996 }, pages = { 1703 } }

TY - JOUR AU - V. G. Litovchenko AU - D. V. Korbutyak AU - S. G. Krylyuk AU - H.T. Grahn AU - K. H. Ploog TI - Enhancement of electron-phonon interaction in ultra-short period GaAs-AlAs superlattices JF - Proceedings of the 23rd International Conference on the Physics of Semiconductors; edited by M. Scheffler and R. Zimmermann (World Scientific, Singapore, 1996) JA - Proc. ICPS 23 J1 - - VL - SP - 1703 PY - 1996/01/01

Determination of elastic constants of thin films by dispersion of various SAW modes

@article{ author = { S. Makarov and E. Chilla and H.-J. Fröhlich }, title = { Determination of elastic constants of thin films by dispersion of various SAW modes }, journal = { Proceedings of the 1995 IEEE Ultrasonics Symposium; (IEEE, New York, 1995) }, volume = { }, year = { 1996 }, pages = { 357 } }

TY - JOUR AU - S. Makarov AU - E. Chilla AU - H.-J. Fröhlich TI - Determination of elastic constants of thin films by dispersion of various SAW modes JF - Proceedings of the 1995 IEEE Ultrasonics Symposium; (IEEE, New York, 1995) JA - Proc. IEEEUS 1995 J1 - - VL - SP - 357 PY - 1996/01/01

Superradiant terahertz emission from Bloch oscillators

@article{ author = { R. Martini and G. Klose and H. G. Roskos and H. Kurz and H.T. Grahn and R. Hey and K. Ploog }, title = { Superradiant terahertz emission from Bloch oscillators }, journal = { Proceedings of the 23rd International Conference on the Physics of Semiconductors; edited by M. Scheffler and R. Zimmermann (World Scientific, Singapore, 1996) }, volume = { }, year = { 1996 }, pages = { 1771 } }

TY - JOUR AU - R. Martini AU - G. Klose AU - H. G. Roskos AU - H. Kurz AU - H.T. Grahn AU - R. Hey AU - K. Ploog TI - Superradiant terahertz emission from Bloch oscillators JF - Proceedings of the 23rd International Conference on the Physics of Semiconductors; edited by M. Scheffler and R. Zimmermann (World Scientific, Singapore, 1996) JA - Proc. ICPS 23 J1 - - VL - SP - 1771 PY - 1996/01/01

Superradiant emission from Bloch oscillations in semiconductor superlattices

@article{ author = { R. Martini and G. Klose and H. G. Roskos and H. Kurz and H.T. Grahn and R. Hey }, title = { Superradiant emission from Bloch oscillations in semiconductor superlattices }, journal = { Physical Review B: Solid State }, volume = { 54 }, year = { 1996 }, pages = { R14325 } }

TY - JOUR AU - R. Martini AU - G. Klose AU - H. G. Roskos AU - H. Kurz AU - H.T. Grahn AU - R. Hey TI - Superradiant emission from Bloch oscillations in semiconductor superlattices JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 54 SP - R14325 PY - 1996/01/01

Superradiant terahertz emission from Bloch oscillations

@article{ author = { R. Martini and G. Klose and H. G. Roskos and H. Kurz and H.T. Grahn and R. Hey and K. Ploog }, title = { Superradiant terahertz emission from Bloch oscillations }, journal = { Ultrafast Phenomena X; edited by P. F. Barbara, J. G. Fujimoto, W. H. Knox, and W. Zinth (Springer Verlag, Berlin, 1996) }, volume = { }, year = { 1996 }, pages = { 64 } }

TY - JOUR AU - R. Martini AU - G. Klose AU - H. G. Roskos AU - H. Kurz AU - H.T. Grahn AU - R. Hey AU - K. Ploog TI - Superradiant terahertz emission from Bloch oscillations JF - Ultrafast Phenomena X; edited by P. F. Barbara, J. G. Fujimoto, W. H. Knox, and W. Zinth (Springer Verlag, Berlin, 1996) JA - Proc. UFP X J1 - - VL - SP - 64 PY - 1996/01/01

Growth and X-ray characterization of strain compensated GaAs/AlAs Bragg reflectors

@article{ author = { A. Mazuelas and H. Nörenberg and R. Hey and H.T. Grahn }, title = { Growth and X-ray characterization of strain compensated GaAs/AlAs Bragg reflectors }, journal = { Applied Physics Letters }, volume = { 68 }, year = { 1996 }, pages = { 806 } }

TY - JOUR AU - A. Mazuelas AU - H. Nörenberg AU - R. Hey AU - H.T. Grahn TI - Growth and X-ray characterization of strain compensated GaAs/AlAs Bragg reflectors JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 68 SP - 806 PY - 1996/01/01

Strain status and morphology of (In,Ga)As/GaAs ’quantum dot’-like structures

@article{ author = { A. Mazuelas and J.-L. Lazzari and M. Wassermeier and A. Trampert and R. Klann and O. Brandt and K. H. Ploog }, title = { Strain status and morphology of (In,Ga)As/GaAs ’quantum dot’-like structures }, journal = { Proceedings of the 23rd International Conference on the Physics of Semiconductors; edited by M. Scheffler and R. Zimmermann (World Scientific, Singapore, 1996) }, volume = { }, year = { 1996 }, pages = { 1333 } }

TY - JOUR AU - A. Mazuelas AU - J.-L. Lazzari AU - M. Wassermeier AU - A. Trampert AU - R. Klann AU - O. Brandt AU - K. H. Ploog TI - Strain status and morphology of (In,Ga)As/GaAs ’quantum dot’-like structures JF - Proceedings of the 23rd International Conference on the Physics of Semiconductors; edited by M. Scheffler and R. Zimmermann (World Scientific, Singapore, 1996) JA - Proc. ICPS 23 J1 - - VL - SP - 1333 PY - 1996/01/01

Identification of optical transitions in cubic and hexagonal GaN by spatially resolved cathodoluminescence

@article{ author = { J. Menniger and U. Jahn and O. Brandt and H. Yang and K. Ploog }, title = { Identification of optical transitions in cubic and hexagonal GaN by spatially resolved cathodoluminescence }, journal = { Physical Review B: Solid State }, volume = { 53 }, year = { 1996 }, pages = { 1881 } }

TY - JOUR AU - J. Menniger AU - U. Jahn AU - O. Brandt AU - H. Yang AU - K. Ploog TI - Identification of optical transitions in cubic and hexagonal GaN by spatially resolved cathodoluminescence JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 53 SP - 1881 PY - 1996/01/01

Optical transitions in cubic GaN investigated by spatially resolved cathodoluminescence

@article{ author = { J. Menniger and U. Jahn and O. Brandt and H. Yang and K. H. Ploog }, title = { Optical transitions in cubic GaN investigated by spatially resolved cathodoluminescence }, journal = { Applied Physics Letters }, volume = { 69 }, year = { 1996 }, pages = { 836 } }

TY - JOUR AU - J. Menniger AU - U. Jahn AU - O. Brandt AU - H. Yang AU - K. H. Ploog TI - Optical transitions in cubic GaN investigated by spatially resolved cathodoluminescence JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 69 SP - 836 PY - 1996/01/01

Electric-field domain formation in type-II superlattices

@article{ author = { H. Mimura and M. Hosoda and N. Ohtani and K. Tominaga and K. Fujita and T. Watanabe and H.T. Grahn and K. Fujiwara }, title = { Electric-field domain formation in type-II superlattices }, journal = { Physical Review B: Solid State }, volume = { 54 }, year = { 1996 }, pages = { R2323 } }

TY - JOUR AU - H. Mimura AU - M. Hosoda AU - N. Ohtani AU - K. Tominaga AU - K. Fujita AU - T. Watanabe AU - H.T. Grahn AU - K. Fujiwara TI - Electric-field domain formation in type-II superlattices JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 54 SP - R2323 PY - 1996/01/01

Differential phase shift keying SAW correlator on GaAs

@article{ author = { F. Moeller and J. Enderlein }, title = { Differential phase shift keying SAW correlator on GaAs }, journal = { Proceedings of the 1996 IEEE Ultrasonics Symposium; (IEEE, New York, 1996) }, volume = { }, year = { 1996 }, pages = { 37 } }

TY - JOUR AU - F. Moeller AU - J. Enderlein TI - Differential phase shift keying SAW correlator on GaAs JF - Proceedings of the 1996 IEEE Ultrasonics Symposium; (IEEE, New York, 1996) JA - Proc. IEEEUS 1996 J1 - - VL - SP - 37 PY - 1996/01/01

Exciton luminescence of single-crystal GaN

@article{ author = { J. Müllhäuser and O. Brandt and H. Yang and K. Ploog }, title = { Exciton luminescence of single-crystal GaN }, journal = { Gallium Nitride and Related Materials; edited by F. A. Ponce, R. D. Dupuis, S. Nakamura, and J. A. Edmond, Mater. Res. Soc. Proc. Vol. 395 (MRS, Pittsburgh, 1996) }, volume = { }, year = { 1996 }, pages = { 607 } }

TY - JOUR AU - J. Müllhäuser AU - O. Brandt AU - H. Yang AU - K. Ploog TI - Exciton luminescence of single-crystal GaN JF - Gallium Nitride and Related Materials; edited by F. A. Ponce, R. D. Dupuis, S. Nakamura, and J. A. Edmond, Mater. Res. Soc. Proc. Vol. 395 (MRS, Pittsburgh, 1996) JA - Proc. MRS 395 J1 - - VL - SP - 607 PY - 1996/01/01

Exciton dynamics and spin relaxation in unstrained and tensile-strained quantum wells

@article{ author = { L. Munoz and E. Perez and V. Bellani and S. Zimmermann and L. Vina and K. Ploog and E. S. Koteles and K. M. Lau }, title = { Exciton dynamics and spin relaxation in unstrained and tensile-strained quantum wells }, journal = { Journal of the Optical Society of America B }, volume = { 13 }, year = { 1996 }, pages = { 994 } }

TY - JOUR AU - L. Munoz AU - E. Perez AU - V. Bellani AU - S. Zimmermann AU - L. Vina AU - K. Ploog AU - E. S. Koteles AU - K. M. Lau TI - Exciton dynamics and spin relaxation in unstrained and tensile-strained quantum wells JF - Journal of the Optical Society of America B JA - J. Opt. Soc. Am. B J1 - JOSAB VL - 13 SP - 994 PY - 1996/01/01

Correlation between intersubband Raman scattering and electric-field domains in quantum well structures

@article{ author = { S. Murugkar and R. Merlin and S. H. Kwok and H.T. Grahn and R. Hey }, title = { Correlation between intersubband Raman scattering and electric-field domains in quantum well structures }, journal = { Solid-State Electronics }, volume = { 40 }, year = { 1996 }, pages = { 153 } }

TY - JOUR AU - S. Murugkar AU - R. Merlin AU - S. H. Kwok AU - H.T. Grahn AU - R. Hey TI - Correlation between intersubband Raman scattering and electric-field domains in quantum well structures JF - Solid-State Electronics JA - Solid-State Electron. J1 - SSE VL - 40 SP - 153 PY - 1996/01/01

Optimization of carbon incorporation in GaAs during epitaxial growth

@article{ author = { H. Nörenberg and A. Mazuelas and K. Hagenstein and R. Hey and H.T. Grahn }, title = { Optimization of carbon incorporation in GaAs during epitaxial growth }, journal = { Applied Physics A: Materials Science & Processing }, volume = { 62 }, year = { 1996 }, pages = { 459 } }

TY - JOUR AU - H. Nörenberg AU - A. Mazuelas AU - K. Hagenstein AU - R. Hey AU - H.T. Grahn TI - Optimization of carbon incorporation in GaAs during epitaxial growth JF - Applied Physics A: Materials Science & Processing JA - Appl. Phys. A: Mater. Sci. Process. J1 - APA VL - 62 SP - 459 PY - 1996/01/01

Selectivity of growth on patterned GaAs (311)A substrates

@article{ author = { R. Nötzel and J. Menniger and M. Ramsteiner and A. Ruiz and H.-P. Schönherr and K. H. Ploog }, title = { Selectivity of growth on patterned GaAs (311)A substrates }, journal = { Applied Physics Letters }, volume = { 68 }, year = { 1996 }, pages = { 1132 } }

TY - JOUR AU - R. Nötzel AU - J. Menniger AU - M. Ramsteiner AU - A. Ruiz AU - H.-P. Schönherr AU - K. H. Ploog TI - Selectivity of growth on patterned GaAs (311)A substrates JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 68 SP - 1132 PY - 1996/01/01

Micro-photoluminescence study at room temperature of sidewall quantum wires formed on patterned GaAs (311)A substrates by molecular beam epitaxy

@article{ author = { R. Nötzel and M. Ramsteiner and J. Menniger and A. Trampert and H.-P. Schönherr and L. Däweritz and K. H. Ploog }, title = { Micro-photoluminescence study at room temperature of sidewall quantum wires formed on patterned GaAs (311)A substrates by molecular beam epitaxy }, journal = { Japanese Journal of Applied Physics, Part 2 }, volume = { 35 }, year = { 1996 }, pages = { L297 } }

TY - JOUR AU - R. Nötzel AU - M. Ramsteiner AU - J. Menniger AU - A. Trampert AU - H.-P. Schönherr AU - L. Däweritz AU - K. H. Ploog TI - Micro-photoluminescence study at room temperature of sidewall quantum wires formed on patterned GaAs (311)A substrates by molecular beam epitaxy JF - Japanese Journal of Applied Physics, Part 2 JA - Jpn. J. Appl. Phys., Part 2 J1 - JJAP2 VL - 35 SP - L297 PY - 1996/01/01

Patterned growth on high-index GaAs (n11) substrates: application to sidewall quantum wires

@article{ author = { R. Nötzel and M. Ramsteiner and J. Menniger and A. Trampert and H.-P. Schönherr and L. Däweritz and K. H. Ploog }, title = { Patterned growth on high-index GaAs (n11) substrates: application to sidewall quantum wires }, journal = { Journal of Applied Physics }, volume = { 80 }, year = { 1996 }, pages = { 4108 } }

TY - JOUR AU - R. Nötzel AU - M. Ramsteiner AU - J. Menniger AU - A. Trampert AU - H.-P. Schönherr AU - L. Däweritz AU - K. H. Ploog TI - Patterned growth on high-index GaAs (n11) substrates: application to sidewall quantum wires JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 80 SP - 4108 PY - 1996/01/01

Self-organized growth of quantum-dot structures

@article{ author = { R. Nötzel }, title = { Self-organized growth of quantum-dot structures }, journal = { Semiconductor Science and Technology }, volume = { 11 }, year = { 1996 }, pages = { 1365 } }

TY - JOUR AU - R. Nötzel TI - Self-organized growth of quantum-dot structures JF - Semiconductor Science and Technology JA - Semicond. Sci. Technol. J1 - SST VL - 11 SP - 1365 PY - 1996/01/01

Self-organized quantum dots

@article{ author = { R. Nötzel and J. Temmyo and T. Tamamura and T. Fukui and H. Hasegawa }, title = { Self-organized quantum dots }, journal = { Europhysics News }, volume = { 27 }, year = { 1996 }, pages = { 148 } }

TY - JOUR AU - R. Nötzel AU - J. Temmyo AU - T. Tamamura AU - T. Fukui AU - H. Hasegawa TI - Self-organized quantum dots JF - Europhysics News JA - Europhys. News J1 - EPN VL - 27 SP - 148 PY - 1996/01/01

Current self-oscillations originating from resonant tunneling through X-states in GaAs/AlAs type-II superlattices

@article{ author = { N. Ohtani and M. Hosoda and H. Mimura and K. Tominaga and T. Watanabe and K. Fujiwara and H.T. Grahn }, title = { Current self-oscillations originating from resonant tunneling through X-states in GaAs/AlAs type-II superlattices }, journal = { Proceedings of the 23rd International Conference on the Physics of Semiconductors; edited by M. Scheffler and R. Zimmermann (World Scientific, Singapore, 1996) }, volume = { }, year = { 1996 }, pages = { 1675 } }

TY - JOUR AU - N. Ohtani AU - M. Hosoda AU - H. Mimura AU - K. Tominaga AU - T. Watanabe AU - K. Fujiwara AU - H.T. Grahn TI - Current self-oscillations originating from resonant tunneling through X-states in GaAs/AlAs type-II superlattices JF - Proceedings of the 23rd International Conference on the Physics of Semiconductors; edited by M. Scheffler and R. Zimmermann (World Scientific, Singapore, 1996) JA - Proc. ICPS 23 J1 - - VL - SP - 1675 PY - 1996/01/01

Self-organized ordered growth of III-V semiconductor quantum wires

@article{ author = { K. H. Ploog }, title = { Self-organized ordered growth of III-V semiconductor quantum wires }, journal = { Nanofabrication and Biosystems;edited by H. C. Hoch, L. W. Jelinski, and H. G. Craighead (Cambridge University Press, Cambridge, 1996) }, volume = { }, year = { 1996 }, pages = { 234 } }

TY - JOUR AU - K. H. Ploog TI - Self-organized ordered growth of III-V semiconductor quantum wires JF - Nanofabrication and Biosystems;edited by H. C. Hoch, L. W. Jelinski, and H. G. Craighead (Cambridge University Press, Cambridge, 1996) JA - NFBS J1 - - VL - SP - 234 PY - 1996/01/01

Adhesion in growth of defect-free silicon over silicon dioxide

@article{ author = { H. Raidt and R. Köhler and F. Banhart and B. Jenichen and A. Gutjahr and M. Konuma and I. Silier and E. Bauser }, title = { Adhesion in growth of defect-free silicon over silicon dioxide }, journal = { Journal of Applied Physics }, volume = { 80 }, year = { 1996 }, pages = { 4101 } }

TY - JOUR AU - H. Raidt AU - R. Köhler AU - F. Banhart AU - B. Jenichen AU - A. Gutjahr AU - M. Konuma AU - I. Silier AU - E. Bauser TI - Adhesion in growth of defect-free silicon over silicon dioxide JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 80 SP - 4101 PY - 1996/01/01

Photoluminescence enhancement induced by near surface Si doping wires in GaAs

@article{ author = { M. Ramsteiner and R. Klann and L. Däweritz and R. Hey and H. Kostial and G. Jungk }, title = { Photoluminescence enhancement induced by near surface Si doping wires in GaAs }, journal = { Solid-State Electronics }, volume = { 40 }, year = { 1996 }, pages = { 329 } }

TY - JOUR AU - M. Ramsteiner AU - R. Klann AU - L. Däweritz AU - R. Hey AU - H. Kostial AU - G. Jungk TI - Photoluminescence enhancement induced by near surface Si doping wires in GaAs JF - Solid-State Electronics JA - Solid-State Electron. J1 - SSE VL - 40 SP - 329 PY - 1996/01/01

Electronic Raman scattering from donors in GaN and the relationship to the yellow luminescence band

@article{ author = { M. Ramsteiner and J. Menniger and O. Brandt and H. Yang and K. H. Ploog }, title = { Electronic Raman scattering from donors in GaN and the relationship to the yellow luminescence band }, journal = { Proceedings of the 23rd International Conference on the Physics of Semiconductors; edited by M. Scheffler and R. Zimmermann (World Scientific, Singapore, 1996) }, volume = { }, year = { 1996 }, pages = { 2933 } }

TY - JOUR AU - M. Ramsteiner AU - J. Menniger AU - O. Brandt AU - H. Yang AU - K. H. Ploog TI - Electronic Raman scattering from donors in GaN and the relationship to the yellow luminescence band JF - Proceedings of the 23rd International Conference on the Physics of Semiconductors; edited by M. Scheffler and R. Zimmermann (World Scientific, Singapore, 1996) JA - Proc. ICPS 23 J1 - - VL - SP - 2933 PY - 1996/01/01

Shallow donors in GaN studied by electronic Raman scattering in resonance with yellow luminescence transitions

@article{ author = { M. Ramsteiner and J. Menniger and O. Brandt and H. Yang and K. H. Ploog }, title = { Shallow donors in GaN studied by electronic Raman scattering in resonance with yellow luminescence transitions }, journal = { Applied Physics Letters }, volume = { 69 }, year = { 1996 }, pages = { 1276 } }

TY - JOUR AU - M. Ramsteiner AU - J. Menniger AU - O. Brandt AU - H. Yang AU - K. H. Ploog TI - Shallow donors in GaN studied by electronic Raman scattering in resonance with yellow luminescence transitions JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 69 SP - 1276 PY - 1996/01/01

Ordering in Ga_xIn_1-xAs_yP_1-y detected by diffraction methods and cathodoluminescence

@article{ author = { I. Rechenberg and A. Oster and A. Knauer and H. Richter and J. Menniger and M. Celeyers }, title = { Ordering in Ga_xIn_1-xAs_yP_1-y detected by diffraction methods and cathodoluminescence }, journal = { Optoelectronic Materials: Ordering, Composition Modulation, and Self-Assembled Structures; edited by E. D. Jones, A. Mascarenhas, and P. Petroff, Mater. Res. Soc. Proc. Vol. 417 (MRS, Pittsburgh, 1996) }, volume = { }, year = { 1996 }, pages = { 49 } }

TY - JOUR AU - I. Rechenberg AU - A. Oster AU - A. Knauer AU - H. Richter AU - J. Menniger AU - M. Celeyers TI - Ordering in Ga_xIn_1-xAs_yP_1-y detected by diffraction methods and cathodoluminescence JF - Optoelectronic Materials: Ordering, Composition Modulation, and Self-Assembled Structures; edited by E. D. Jones, A. Mascarenhas, and P. Petroff, Mater. Res. Soc. Proc. Vol. 417 (MRS, Pittsburgh, 1996) JA - Proc. MRS 417 J1 - - VL - SP - 49 PY - 1996/01/01

Raman study of Stark localization in GaAs/AlAs superlattices

@article{ author = { V. F. Sapega and T. Ruf and M. Cardona and H.T. Grahn and K. H. Ploog }, title = { Raman study of Stark localization in GaAs/AlAs superlattices }, journal = { Proceedings of the 23rd International Conference on the Physics of Semiconductors; edited by M. Scheffler and R. Zimmermann (World Scientific, Singapore, 1996) }, volume = { }, year = { 1996 }, pages = { 1787 } }

TY - JOUR AU - V. F. Sapega AU - T. Ruf AU - M. Cardona AU - H.T. Grahn AU - K. H. Ploog TI - Raman study of Stark localization in GaAs/AlAs superlattices JF - Proceedings of the 23rd International Conference on the Physics of Semiconductors; edited by M. Scheffler and R. Zimmermann (World Scientific, Singapore, 1996) JA - Proc. ICPS 23 J1 - - VL - SP - 1787 PY - 1996/01/01

Pseudo-negative photocurrent spectroscopy in GaAs-AlAs superlattices

@article{ author = { L. Schrottke and H.T. Grahn and K. Fujiwara }, title = { Pseudo-negative photocurrent spectroscopy in GaAs-AlAs superlattices }, journal = { Journal of Applied Physics }, volume = { 79 }, year = { 1996 }, pages = { 4197 } }

TY - JOUR AU - L. Schrottke AU - H.T. Grahn AU - K. Fujiwara TI - Pseudo-negative photocurrent spectroscopy in GaAs-AlAs superlattices JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 79 SP - 4197 PY - 1996/01/01

Inter- and intrasubband relaxation times in GaAs-Al_0.35Ga_0.65As quantum wells measured by femtosecond time-resolved differential transmission

@article{ author = { K. L. Schumacher and D. Collings and R. T. Phillips and D. A. Ritchie and G. Weber and J. N. Schulman and K. Ploog }, title = { Inter- and intrasubband relaxation times in GaAs-Al_0.35Ga_0.65As quantum wells measured by femtosecond time-resolved differential transmission }, journal = { Semiconductor Science and Technology }, volume = { 11 }, year = { 1996 }, pages = { 1173 } }

TY - JOUR AU - K. L. Schumacher AU - D. Collings AU - R. T. Phillips AU - D. A. Ritchie AU - G. Weber AU - J. N. Schulman AU - K. Ploog TI - Inter- and intrasubband relaxation times in GaAs-Al_0.35Ga_0.65As quantum wells measured by femtosecond time-resolved differential transmission JF - Semiconductor Science and Technology JA - Semicond. Sci. Technol. J1 - SST VL - 11 SP - 1173 PY - 1996/01/01

Influence of imperfections and weak disorder in domain formation in superlattices

@article{ author = { G. Schwarz and A. Wacker and F. Prengel and E. Schöll and J. Kastrup and H.T. Grahn and K. Ploog }, title = { Influence of imperfections and weak disorder in domain formation in superlattices }, journal = { Semiconductor Science and Technology }, volume = { 11 }, year = { 1996 }, pages = { 475 } }

TY - JOUR AU - G. Schwarz AU - A. Wacker AU - F. Prengel AU - E. Schöll AU - J. Kastrup AU - H.T. Grahn AU - K. Ploog TI - Influence of imperfections and weak disorder in domain formation in superlattices JF - Semiconductor Science and Technology JA - Semicond. Sci. Technol. J1 - SST VL - 11 SP - 475 PY - 1996/01/01

Electric field domains in intentionally perturbed semiconductor superlattices

@article{ author = { G. Schwarz and F. Prengel and E. Schöll and J. Kastrup and H.T. Grahn and R. Hey }, title = { Electric field domains in intentionally perturbed semiconductor superlattices }, journal = { Applied Physics Letters }, volume = { 69 }, year = { 1996 }, pages = { 626 } }

TY - JOUR AU - G. Schwarz AU - F. Prengel AU - E. Schöll AU - J. Kastrup AU - H.T. Grahn AU - R. Hey TI - Electric field domains in intentionally perturbed semiconductor superlattices JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 69 SP - 626 PY - 1996/01/01

Studies on correlation between the quality of GaAs LEC crystals and the inert gas pressure

@article{ author = { M. Seifert and M. Neubert and W. Ulrici and B. Wiedemann and J. Donecker and J. Kluge and E. Wolf and D. Klinger and P. Rudolph }, title = { Studies on correlation between the quality of GaAs LEC crystals and the inert gas pressure }, journal = { Journal of Crystal Growth }, volume = { 158 }, year = { 1996 }, pages = { 409 } }

TY - JOUR AU - M. Seifert AU - M. Neubert AU - W. Ulrici AU - B. Wiedemann AU - J. Donecker AU - J. Kluge AU - E. Wolf AU - D. Klinger AU - P. Rudolph TI - Studies on correlation between the quality of GaAs LEC crystals and the inert gas pressure JF - Journal of Crystal Growth JA - J. Cryst. Growth J1 - JGC VL - 158 SP - 409 PY - 1996/01/01

Properties of GaAs LEC single crystals grown at different inert gas pressures

@article{ author = { M. Seifert and P. Rudolph and M. Neubert and W. Ulrici and J. Donecker and J. Kluge and E. Wolf and D. Klinger }, title = { Properties of GaAs LEC single crystals grown at different inert gas pressures }, journal = { Proceedings of the 22nd International Symposium on Compound Semiconductors; edited by J.-C. Woo and Y.S. Park, IOP Conf. Ser. }, volume = { 145 }, year = { 1996 }, pages = { 541 } }

TY - JOUR AU - M. Seifert AU - P. Rudolph AU - M. Neubert AU - W. Ulrici AU - J. Donecker AU - J. Kluge AU - E. Wolf AU - D. Klinger TI - Properties of GaAs LEC single crystals grown at different inert gas pressures JF - Proceedings of the 22nd International Symposium on Compound Semiconductors; edited by J.-C. Woo and Y.S. Park, IOP Conf. Ser. JA - Proc. ISCS 22 J1 - - VL - 145 SP - 541 PY - 1996/01/01

Solution growth of semiconductor-on-insulator layers

@article{ author = { I. Silier and A. Gutjahr and N. Nagel and P. O. Hansson and E. Czech and M. Konuma and E. Bauser and F. Banhart and R. Köhler and H. Raidt and B. Jenichen }, title = { Solution growth of semiconductor-on-insulator layers }, journal = { Journal of Crystal Growth }, volume = { 166 }, year = { 1996 }, pages = { 727 } }

TY - JOUR AU - I. Silier AU - A. Gutjahr AU - N. Nagel AU - P. O. Hansson AU - E. Czech AU - M. Konuma AU - E. Bauser AU - F. Banhart AU - R. Köhler AU - H. Raidt AU - B. Jenichen TI - Solution growth of semiconductor-on-insulator layers JF - Journal of Crystal Growth JA - J. Cryst. Growth J1 - JGC VL - 166 SP - 727 PY - 1996/01/01

Field induced carrier capture and optical release from traps in highly doped GaAs:Si

@article{ author = { R. Stasch and M. Asche and M. Giehler and R. Hey and B. Danilchenko and A. Klimashov and S. Roshko and O. Sarbey }, title = { Field induced carrier capture and optical release from traps in highly doped GaAs:Si }, journal = { Journal of Physics: Condensed Matter }, volume = { 8 }, year = { 1996 }, pages = { 3215 } }

TY - JOUR AU - R. Stasch AU - M. Asche AU - M. Giehler AU - R. Hey AU - B. Danilchenko AU - A. Klimashov AU - S. Roshko AU - O. Sarbey TI - Field induced carrier capture and optical release from traps in highly doped GaAs:Si JF - Journal of Physics: Condensed Matter JA - J. Phys.: Condens. Matter J1 - JPCM VL - 8 SP - 3215 PY - 1996/01/01

Field induced electron capture by metastable centers in planar-doped GaAs:Si

@article{ author = { R. Stasch and M. Asche and M. Giehler and R. Hey and O. G. Sarbey }, title = { Field induced electron capture by metastable centers in planar-doped GaAs:Si }, journal = { Hot Carriers in Semiconductors; edited by K. Hess, J. P. Leburton, and U. Ravaioli (Plenum Press, New York, 1996) }, volume = { }, year = { 1996 }, pages = { 125 } }

TY - JOUR AU - R. Stasch AU - M. Asche AU - M. Giehler AU - R. Hey AU - O. G. Sarbey TI - Field induced electron capture by metastable centers in planar-doped GaAs:Si JF - Hot Carriers in Semiconductors; edited by K. Hess, J. P. Leburton, and U. Ravaioli (Plenum Press, New York, 1996) JA - HCIS J1 - - VL - SP - 125 PY - 1996/01/01

Temperature persistent bistability and threshold switching in a single barrier heterostructure hot-electron diode

@article{ author = { R. Stasch and R. Hey and M. Asche and A. Wacker and E. Schöll }, title = { Temperature persistent bistability and threshold switching in a single barrier heterostructure hot-electron diode }, journal = { Journal of Applied Physics }, volume = { 80 }, year = { 1996 }, pages = { 3376 } }

TY - JOUR AU - R. Stasch AU - R. Hey AU - M. Asche AU - A. Wacker AU - E. Schöll TI - Temperature persistent bistability and threshold switching in a single barrier heterostructure hot-electron diode JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 80 SP - 3376 PY - 1996/01/01

Temperature persistent bistability and threshold switching in a single barrier heterostructure hot-electron diode

@article{ author = { R. Stasch and R. Hey and M. Asche and A. Wacker }, title = { Temperature persistent bistability and threshold switching in a single barrier heterostructure hot-electron diode }, journal = { Proceedings of the 23rd International Conference on the Physics of Semiconductors; edited by M. Scheffler and R. Zimmermann (World Scientific, Singapore, 1996) }, volume = { }, year = { 1996 }, pages = { 3307 } }

TY - JOUR AU - R. Stasch AU - R. Hey AU - M. Asche AU - A. Wacker TI - Temperature persistent bistability and threshold switching in a single barrier heterostructure hot-electron diode JF - Proceedings of the 23rd International Conference on the Physics of Semiconductors; edited by M. Scheffler and R. Zimmermann (World Scientific, Singapore, 1996) JA - Proc. ICPS 23 J1 - - VL - SP - 3307 PY - 1996/01/01

Electronic states in quasi-one-dimensional wires with nonuniform magnetic fields

@article{ author = { Y. Takagaki and K. Ploog }, title = { Electronic states in quasi-one-dimensional wires with nonuniform magnetic fields }, journal = { Physical Review B: Solid State }, volume = { 53 }, year = { 1996 }, pages = { 3885 } }

TY - JOUR AU - Y. Takagaki AU - K. Ploog TI - Electronic states in quasi-one-dimensional wires with nonuniform magnetic fields JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 53 SP - 3885 PY - 1996/01/01

Improved model for the determination of strain fields and chemical composition of semiconductor heterostructures by high-resolution X-ray diffractometry

@article{ author = { L. Tapfer and L. De Caro and C. Giannini and H.-P. Schönherr and K. H. Ploog }, title = { Improved model for the determination of strain fields and chemical composition of semiconductor heterostructures by high-resolution X-ray diffractometry }, journal = { Solid State Communications }, volume = { 98 }, year = { 1996 }, pages = { 599 } }

TY - JOUR AU - L. Tapfer AU - L. De Caro AU - C. Giannini AU - H.-P. Schönherr AU - K. H. Ploog TI - Improved model for the determination of strain fields and chemical composition of semiconductor heterostructures by high-resolution X-ray diffractometry JF - Solid State Communications JA - Solid State Commun. J1 - SSC VL - 98 SP - 599 PY - 1996/01/01

Interplay between growth mode and plastic relaxation of highly-mismatched InAs layers grown on (100) GaAs substrates by molecular-beam epitaxy

@article{ author = { E. Tournie and A. Trampert and K. H. Ploog }, title = { Interplay between growth mode and plastic relaxation of highly-mismatched InAs layers grown on (100) GaAs substrates by molecular-beam epitaxy }, journal = { Proceedings of the International Conference on Semiconductor Heteroepitaxy; edited by B. Gil and R.-L. Aulomnard (World Scientific, Singapore, 1996) }, volume = { }, year = { 1996 }, pages = { 590 } }

TY - JOUR AU - E. Tournie AU - A. Trampert AU - K. H. Ploog TI - Interplay between growth mode and plastic relaxation of highly-mismatched InAs layers grown on (100) GaAs substrates by molecular-beam epitaxy JF - Proceedings of the International Conference on Semiconductor Heteroepitaxy; edited by B. Gil and R.-L. Aulomnard (World Scientific, Singapore, 1996) JA - Proc. ICSH J1 - - VL - SP - 590 PY - 1996/01/01

Interfacial defect control of highly mismatched (100)InAs/GaAs heterostructures grown by MBE

@article{ author = { A. Trampert and E. Tournie and K. H. Ploog }, title = { Interfacial defect control of highly mismatched (100)InAs/GaAs heterostructures grown by MBE }, journal = { Proceedings of the 9th International Conference on Microscopy of Semiconducting Materials; edited by A. G. Cullis and A. E. Stanton-Bevan, IOP Conf. Ser. }, volume = { 146 }, year = { 1996 }, pages = { 203 } }

TY - JOUR AU - A. Trampert AU - E. Tournie AU - K. H. Ploog TI - Interfacial defect control of highly mismatched (100)InAs/GaAs heterostructures grown by MBE JF - Proceedings of the 9th International Conference on Microscopy of Semiconducting Materials; edited by A. G. Cullis and A. E. Stanton-Bevan, IOP Conf. Ser. JA - Proc. ICMSM 9 J1 - - VL - 146 SP - 203 PY - 1996/01/01

Optical absorption and paramagnetic resonance of the Cr²⁺ impurity in GaP

@article{ author = { W. Ulrici and J. Kreissl }, title = { Optical absorption and paramagnetic resonance of the Cr²⁺ impurity in GaP }, journal = { Proceedings of the 23rd International Conference on the Physics of Semiconductors; edited by M. Scheffler and R. Zimmermann (World Scientific, Singapore, 1996) }, volume = { }, year = { 1996 }, pages = { 2833 } }

TY - JOUR AU - W. Ulrici AU - J. Kreissl TI - Optical absorption and paramagnetic resonance of the Cr²⁺ impurity in GaP JF - Proceedings of the 23rd International Conference on the Physics of Semiconductors; edited by M. Scheffler and R. Zimmermann (World Scientific, Singapore, 1996) JA - Proc. ICPS 23 J1 - - VL - SP - 2833 PY - 1996/01/01

Spin splitting in a polarized quasi-two-dimensional exciton gas

@article{ author = { L. Vina and L. Munoz and E. Perez and J. Fernandez-Rossier and C. Tejedor and K. Ploog }, title = { Spin splitting in a polarized quasi-two-dimensional exciton gas }, journal = { Physical Review B: Solid State }, volume = { 54 }, year = { 1996 }, pages = { R8317 } }

TY - JOUR AU - L. Vina AU - L. Munoz AU - E. Perez AU - J. Fernandez-Rossier AU - C. Tejedor AU - K. Ploog TI - Spin splitting in a polarized quasi-two-dimensional exciton gas JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 54 SP - R8317 PY - 1996/01/01

Role of excitons in double Raman resonances in GaAs quantum wells

@article{ author = { L. Vina and J. M. Calleja and A. Cros and A. Cantarero and T. Berendschot and J. A. A. J. Perenboom and K. Ploog }, title = { Role of excitons in double Raman resonances in GaAs quantum wells }, journal = { Physical Review B: Solid State }, volume = { 53 }, year = { 1996 }, pages = { 3975 } }

TY - JOUR AU - L. Vina AU - J. M. Calleja AU - A. Cros AU - A. Cantarero AU - T. Berendschot AU - J. A. A. J. Perenboom AU - K. Ploog TI - Role of excitons in double Raman resonances in GaAs quantum wells JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 53 SP - 3975 PY - 1996/01/01

In situ spectroscopic ellipsometry of GaAs(001) surface reconstructions

@article{ author = { M. Wassermeier and J. Behrend and K. H. Ploog }, title = { In situ spectroscopic ellipsometry of GaAs(001) surface reconstructions }, journal = { Physical Review B: Solid State }, volume = { 53 }, year = { 1996 }, pages = { 13542 } }

TY - JOUR AU - M. Wassermeier AU - J. Behrend AU - K. H. Ploog TI - In situ spectroscopic ellipsometry of GaAs(001) surface reconstructions JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 53 SP - 13542 PY - 1996/01/01

Surface reconstruction induced optical anisotropy measured by spectroscopic ellipsometry

@article{ author = { M. Wassermeier and J. Behrend and K. H. Ploog }, title = { Surface reconstruction induced optical anisotropy measured by spectroscopic ellipsometry }, journal = { Proceedings of the 23rd International Conference on the Physics of Semiconductors; edited by M. Scheffler and R. Zimmermann (World Scientific, Singapore, 1996) }, volume = { }, year = { 1996 }, pages = { 835 } }

TY - JOUR AU - M. Wassermeier AU - J. Behrend AU - K. H. Ploog TI - Surface reconstruction induced optical anisotropy measured by spectroscopic ellipsometry JF - Proceedings of the 23rd International Conference on the Physics of Semiconductors; edited by M. Scheffler and R. Zimmermann (World Scientific, Singapore, 1996) JA - Proc. ICPS 23 J1 - - VL - SP - 835 PY - 1996/01/01

In-situ spectroscopic ellipsometry and reflection difference spectroscopy of GaAs (001) surface reconstructions

@article{ author = { M. Wassermeier and J. Behrend and J. T. Zettler and K. Stahrenberg and K. H. Ploog }, title = { In-situ spectroscopic ellipsometry and reflection difference spectroscopy of GaAs (001) surface reconstructions }, journal = { Applied Surface Science }, volume = { 107 }, year = { 1996 }, pages = { 48 } }

TY - JOUR AU - M. Wassermeier AU - J. Behrend AU - J. T. Zettler AU - K. Stahrenberg AU - K. H. Ploog TI - In-situ spectroscopic ellipsometry and reflection difference spectroscopy of GaAs (001) surface reconstructions JF - Applied Surface Science JA - Appl. Surf. Sci. J1 - ASS VL - 107 SP - 48 PY - 1996/01/01

MBE growth of cubic GaN on GaAs substrates

@article{ author = { H. Yang and O. Brandt and K. Ploog }, title = { MBE growth of cubic GaN on GaAs substrates }, journal = { Physica Status Solidi B }, volume = { 194 }, year = { 1996 }, pages = { 109 } }

TY - JOUR AU - H. Yang AU - O. Brandt AU - K. Ploog TI - MBE growth of cubic GaN on GaAs substrates JF - Physica Status Solidi B JA - Phys. Status Solidi B J1 - PSSB VL - 194 SP - 109 PY - 1996/01/01

Real-time monitoring of the surface stoichiometry during molecular beam epitaxy of cubic GaN on (001) GaAs by RHEED

@article{ author = { H. Yang and O. Brandt and K. Ploog }, title = { Real-time monitoring of the surface stoichiometry during molecular beam epitaxy of cubic GaN on (001) GaAs by RHEED }, journal = { Journal of Electronic Materials }, volume = { 25 }, year = { 1996 }, pages = { 787 } }

TY - JOUR AU - H. Yang AU - O. Brandt AU - K. Ploog TI - Real-time monitoring of the surface stoichiometry during molecular beam epitaxy of cubic GaN on (001) GaAs by RHEED JF - Journal of Electronic Materials JA - J. Electron. Mater. J1 - JEM VL - 25 SP - 787 PY - 1996/01/01

Initial stage of growth of GaN/GaAs(001) in plasma-assisted molecular beam epitaxy

@article{ author = { H. Yang and O. Brandt and A. Trampert and K. H. Ploog }, title = { Initial stage of growth of GaN/GaAs(001) in plasma-assisted molecular beam epitaxy }, journal = { Applied Surface Science }, volume = { 104/105 }, year = { 1996 }, pages = { 461 } }

TY - JOUR AU - H. Yang AU - O. Brandt AU - A. Trampert AU - K. H. Ploog TI - Initial stage of growth of GaN/GaAs(001) in plasma-assisted molecular beam epitaxy JF - Applied Surface Science JA - Appl. Surf. Sci. J1 - ASS VL - 104/105 SP - 461 PY - 1996/01/01

Evaluation of the surface stoichiometry during molecular beam epitaxy of cubic GaN on (001) GaAs

@article{ author = { H. Yang and O. Brandt and M. Wassermeier and J. Behrend and H.-P. Schönherr and K. H. Ploog }, title = { Evaluation of the surface stoichiometry during molecular beam epitaxy of cubic GaN on (001) GaAs }, journal = { Applied Physics Letters }, volume = { 68 }, year = { 1996 }, pages = { 244 } }

TY - JOUR AU - H. Yang AU - O. Brandt AU - M. Wassermeier AU - J. Behrend AU - H.-P. Schönherr AU - K. H. Ploog TI - Evaluation of the surface stoichiometry during molecular beam epitaxy of cubic GaN on (001) GaAs JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 68 SP - 244 PY - 1996/01/01

Quenching of the spontaneous current oscillations in GaAs/AlAs superlattices under domain formation

@article{ author = { Y. Zhang and R. Klann and K. H. Ploog and H.T. Grahn }, title = { Quenching of the spontaneous current oscillations in GaAs/AlAs superlattices under domain formation }, journal = { Applied Physics Letters }, volume = { 69 }, year = { 1996 }, pages = { 1116 } }

TY - JOUR AU - Y. Zhang AU - R. Klann AU - K. H. Ploog AU - H.T. Grahn TI - Quenching of the spontaneous current oscillations in GaAs/AlAs superlattices under domain formation JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 69 SP - 1116 PY - 1996/01/01

Synchronization and chaos induced by resonant tunneling in GaAs/AlAs superlattices

@article{ author = { Y. Zhang and J. Kastrup and R. Klann and K. H. Ploog and H.T. Grahn }, title = { Synchronization and chaos induced by resonant tunneling in GaAs/AlAs superlattices }, journal = { Physical Review Letters }, volume = { 77 }, year = { 1996 }, pages = { 3001 } }

TY - JOUR AU - Y. Zhang AU - J. Kastrup AU - R. Klann AU - K. H. Ploog AU - H.T. Grahn TI - Synchronization and chaos induced by resonant tunneling in GaAs/AlAs superlattices JF - Physical Review Letters JA - Phys. Rev. Lett. J1 - PRL VL - 77 SP - 3001 PY - 1996/01/01

Neutral manganese acceptor in GaP: An electron-paramagnetic-resonance study

@article{ author = { J. Kreissl and W. Ulrici and M. El-Metoui and A.-M. Vasson and A. Vasson and A. Gavaix }, title = { Neutral manganese acceptor in GaP: An electron-paramagnetic-resonance study }, journal = { Physical Review B: Solid State }, volume = { 54 }, year = { 1996 }, pages = { 10508 } }

TY - JOUR AU - J. Kreissl AU - W. Ulrici AU - M. El-Metoui AU - A.-M. Vasson AU - A. Vasson AU - A. Gavaix TI - Neutral manganese acceptor in GaP: An electron-paramagnetic-resonance study JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 54 SP - 10508 PY - 1996/01/01

Nitrogen-Dihydrogen Complex in GaP

@article{ author = { B. Clerjaud and D. Cote and W.-S. Hahn and A. Lebkiri and W. Ulrici and D. Wasik }, title = { Nitrogen-Dihydrogen Complex in GaP }, journal = { Physical Review Letters }, volume = { 77 }, year = { 1996 }, pages = { 4930 } }

TY - JOUR AU - B. Clerjaud AU - D. Cote AU - W.-S. Hahn AU - A. Lebkiri AU - W. Ulrici AU - D. Wasik TI - Nitrogen-Dihydrogen Complex in GaP JF - Physical Review Letters JA - Phys. Rev. Lett. J1 - PRL VL - 77 SP - 4930 PY - 1996/01/01