Investigations of the lateral grain growth in laser interference crystallization

@article{ author = { G. Aichmayr and D. Toet and M. Mulato and P. V. Santos and A. Spagenberg and R. B. Bergmann }, title = { Investigations of the lateral grain growth in laser interference crystallization }, journal = { Journal of Non-Crystalline Solids }, volume = { 227--230 }, year = { 1998 }, pages = { 921 } }

TY - JOUR AU - G. Aichmayr AU - D. Toet AU - M. Mulato AU - P. V. Santos AU - A. Spagenberg AU - R. B. Bergmann TI - Investigations of the lateral grain growth in laser interference crystallization JF - Journal of Non-Crystalline Solids JA - J. Non-Cryst. Solids J1 - JNCS VL - 227--230 SP - 921 PY - 1998/01/01

Lateral grain growth during the laser interference crystallization of a-Si

@article{ author = { G. Aichmayr and D. Toet and M. Mulato and P. V. Santos and A. Spagenberg and S. Christiansen and M. Albrecht and H. P. Strunk }, title = { Lateral grain growth during the laser interference crystallization of a-Si }, journal = { Physica Status Solidi A }, volume = { 166 }, year = { 1998 }, pages = { 659 } }

TY - JOUR AU - G. Aichmayr AU - D. Toet AU - M. Mulato AU - P. V. Santos AU - A. Spagenberg AU - S. Christiansen AU - M. Albrecht AU - H. P. Strunk TI - Lateral grain growth during the laser interference crystallization of a-Si JF - Physica Status Solidi A JA - Phys. Status Solidi A J1 - PSSA VL - 166 SP - 659 PY - 1998/01/01

Effects of uniaxial stress on the ²E²T₂ absorption lines of GaP: Ti³⁺ and the nature of the Jahn-Teller coupling

@article{ author = { A. M. AlShaikh and Q. C. Qiu and P. Roura and W. Ulrici and B. Clerjaud and C. A. Bates and J. L. Dunn }, title = { Effects of uniaxial stress on the ²E²T₂ absorption lines of GaP: Ti³⁺ and the nature of the Jahn-Teller coupling }, journal = { Journal of Physics: Condensed Matter }, volume = { 10 }, year = { 1998 }, pages = { 3367 } }

TY - JOUR AU - A. M. AlShaikh AU - Q. C. Qiu AU - P. Roura AU - W. Ulrici AU - B. Clerjaud AU - C. A. Bates AU - J. L. Dunn TI - Effects of uniaxial stress on the ²E²T₂ absorption lines of GaP: Ti³⁺ and the nature of the Jahn-Teller coupling JF - Journal of Physics: Condensed Matter JA - J. Phys.: Condens. Matter J1 - JPCM VL - 10 SP - 3367 PY - 1998/01/01

Phonon emission and absorption by hot electrons in delta-doped multiple layers in GaAs

@article{ author = { M. Asche }, title = { Phonon emission and absorption by hot electrons in delta-doped multiple layers in GaAs }, journal = { Hot Electrons in Semiconductors: Physics and Devices; edited by N. Balkan (Clarendon Press, Oxford, 1998) }, volume = { }, year = { 1998 }, pages = { 155 } }

TY - JOUR AU - M. Asche TI - Phonon emission and absorption by hot electrons in delta-doped multiple layers in GaAs JF - Hot Electrons in Semiconductors: Physics and Devices; edited by N. Balkan (Clarendon Press, Oxford, 1998) JA - HESPD J1 - - VL - SP - 155 PY - 1998/01/01

Transverse surface acoustic wave detection by scanning acoustic force microscopy

@article{ author = { G. Behme and T. Hesjedal and E. Chilla and H.-J. Fröhlich }, title = { Transverse surface acoustic wave detection by scanning acoustic force microscopy }, journal = { Applied Physics Letters }, volume = { 73 }, year = { 1998 }, pages = { 882 } }

TY - JOUR AU - G. Behme AU - T. Hesjedal AU - E. Chilla AU - H.-J. Fröhlich TI - Transverse surface acoustic wave detection by scanning acoustic force microscopy JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 73 SP - 882 PY - 1998/01/01

Phase velocity measurement of in-plane polarized surface acoustic waves with high spatial resolution

@article{ author = { G. Behme and T. Hesjedal and E. Chilla and H.-J. Fröhlich }, title = { Phase velocity measurement of in-plane polarized surface acoustic waves with high spatial resolution }, journal = { Proceedings of the 1998 IEEE Ultrasonics Symposium; (IEEE, New York, 1998) }, volume = { }, year = { 1998 }, pages = { 127 } }

TY - JOUR AU - G. Behme AU - T. Hesjedal AU - E. Chilla AU - H.-J. Fröhlich TI - Phase velocity measurement of in-plane polarized surface acoustic waves with high spatial resolution JF - Proceedings of the 1998 IEEE Ultrasonics Symposium; (IEEE, New York, 1998) JA - Proc. IEEEUS 1998 J1 - - VL - SP - 127 PY - 1998/01/01

High resolution acoustic field imaging applied to surface acoustic wave devices

@article{ author = { G. Behme and M. Blocker and E. Bigler and T. Hesjedal and H.-J. Fröhlich }, title = { High resolution acoustic field imaging applied to surface acoustic wave devices }, journal = { Proceedings of the 1998 IEEE Ultrasonics Symposium; (IEEE, New York, 1998) }, volume = { }, year = { 1998 }, pages = { 265 } }

TY - JOUR AU - G. Behme AU - M. Blocker AU - E. Bigler AU - T. Hesjedal AU - H.-J. Fröhlich TI - High resolution acoustic field imaging applied to surface acoustic wave devices JF - Proceedings of the 1998 IEEE Ultrasonics Symposium; (IEEE, New York, 1998) JA - Proc. IEEEUS 1998 J1 - - VL - SP - 265 PY - 1998/01/01

Long-wavelength (Ga,In)Sb/GaSb strained quantum well lasers grown by molecular beam epitaxy

@article{ author = { N. Bertru and A. Baranov and Y. Cuminal and G. Almuneau and F. Genty and A. Joullie and O. Brandt and A. Mazuelas and K. H. Ploog }, title = { Long-wavelength (Ga,In)Sb/GaSb strained quantum well lasers grown by molecular beam epitaxy }, journal = { Semiconductor Science and Technology }, volume = { 13 }, year = { 1998 }, pages = { 936 } }

TY - JOUR AU - N. Bertru AU - A. Baranov AU - Y. Cuminal AU - G. Almuneau AU - F. Genty AU - A. Joullie AU - O. Brandt AU - A. Mazuelas AU - K. H. Ploog TI - Long-wavelength (Ga,In)Sb/GaSb strained quantum well lasers grown by molecular beam epitaxy JF - Semiconductor Science and Technology JA - Semicond. Sci. Technol. J1 - SST VL - 13 SP - 936 PY - 1998/01/01

Cubic group III-nitrides

@article{ author = { O. Brandt }, title = { Cubic group III-nitrides }, journal = { Group III Nitride Semiconductor Compounds: Physics and Applications; edited by B. Gil (Oxford University Press, Oxford, 1998) }, volume = { }, year = { 1998 }, pages = { 417 } }

TY - JOUR AU - O. Brandt TI - Cubic group III-nitrides JF - Group III Nitride Semiconductor Compounds: Physics and Applications; edited by B. Gil (Oxford University Press, Oxford, 1998) JA - GTNSCPA J1 - - VL - SP - 417 PY - 1998/01/01

Temperature dependence of the radiative lifetime in GaN

@article{ author = { O. Brandt and J. Ringling and K. H. Ploog and H.-J. Wünsche and F. Henneberger }, title = { Temperature dependence of the radiative lifetime in GaN }, journal = { Physical Review B: Solid State }, volume = { 58 }, year = { 1998 }, pages = { R15977 } }

TY - JOUR AU - O. Brandt AU - J. Ringling AU - K. H. Ploog AU - H.-J. Wünsche AU - F. Henneberger TI - Temperature dependence of the radiative lifetime in GaN JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 58 SP - R15977 PY - 1998/01/01

Recombination dynamics in GaN

@article{ author = { O. Brandt and H.-J. Wünsche and H. Yang and J. R. Müllhäuser and R. Klann and K. H. Ploog }, title = { Recombination dynamics in GaN }, journal = { Journal of Crystal Growth }, volume = { 189/190 }, year = { 1998 }, pages = { 790 } }

TY - JOUR AU - O. Brandt AU - H.-J. Wünsche AU - H. Yang AU - J. R. Müllhäuser AU - R. Klann AU - K. H. Ploog TI - Recombination dynamics in GaN JF - Journal of Crystal Growth JA - J. Cryst. Growth J1 - JGC VL - 189/190 SP - 790 PY - 1998/01/01

Impact of exciton diffusion on the optical properties of thin GaN layers

@article{ author = { O. Brandt and B. Yang and H.-J. Wünsche and U. Jahn and J. Ringling and G. Paris and H.T. Grahn and K. H. Ploog }, title = { Impact of exciton diffusion on the optical properties of thin GaN layers }, journal = { Physical Review B: Solid State }, volume = { 58 }, year = { 1998 }, pages = { R13407 } }

TY - JOUR AU - O. Brandt AU - B. Yang AU - H.-J. Wünsche AU - U. Jahn AU - J. Ringling AU - G. Paris AU - H.T. Grahn AU - K. H. Ploog TI - Impact of exciton diffusion on the optical properties of thin GaN layers JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 58 SP - R13407 PY - 1998/01/01

Analysis of the optical properties of thin GaN layers on 6H-SiC(0001)

@article{ author = { O. Brandt and B. Yang and H.-J. Wünsche and J. Ringling and U. Jahn and G. Paris and K. Ploog }, title = { Analysis of the optical properties of thin GaN layers on 6H-SiC(0001) }, journal = { Proceedings of the 2nd International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 1998); edited by K. Onabe, K. Hiramatsu, K. Itaya, and Y. Nakano (Ohmsha, Ltd., Tokyo, 1998) }, volume = { }, year = { 1998 }, pages = { 688 } }

TY - JOUR AU - O. Brandt AU - B. Yang AU - H.-J. Wünsche AU - J. Ringling AU - U. Jahn AU - G. Paris AU - K. Ploog TI - Analysis of the optical properties of thin GaN layers on 6H-SiC(0001) JF - Proceedings of the 2nd International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 1998); edited by K. Onabe, K. Hiramatsu, K. Itaya, and Y. Nakano (Ohmsha, Ltd., Tokyo, 1998) JA - Proc. ISBLLED 1998 J1 - - VL - SP - 688 PY - 1998/01/01

Growth and doping of cubic GaN and (In,Ga)N films and heterostructures

@article{ author = { O. Brandt and H. Yang and B. Yang and J. R. Müllhäuser and K. H. Ploog }, title = { Growth and doping of cubic GaN and (In,Ga)N films and heterostructures }, journal = { Proceedings of the IEEE 24th International Symposium on Compound Semiconductors; edited by M. Melloch and M. A. Reed, IOP Conf. Ser. }, volume = { 156 }, year = { 1998 }, pages = { 5 } }

TY - JOUR AU - O. Brandt AU - H. Yang AU - B. Yang AU - J. R. Müllhäuser AU - K. H. Ploog TI - Growth and doping of cubic GaN and (In,Ga)N films and heterostructures JF - Proceedings of the IEEE 24th International Symposium on Compound Semiconductors; edited by M. Melloch and M. A. Reed, IOP Conf. Ser. JA - Proc. ISCS 24 J1 - - VL - 156 SP - 5 PY - 1998/01/01

Electron energy loss spectroscopy during MBE growth

@article{ author = { W. Braun and L. Däweritz and K. H. Ploog }, title = { Electron energy loss spectroscopy during MBE growth }, journal = { Physica E: Low-dimensional Systems and Nanostructures }, volume = { 2 }, year = { 1998 }, pages = { 878 } }

TY - JOUR AU - W. Braun AU - L. Däweritz AU - K. H. Ploog TI - Electron energy loss spectroscopy during MBE growth JF - Physica E: Low-dimensional Systems and Nanostructures JA - Physica E (Amsterdam) J1 - PhE VL - 2 SP - 878 PY - 1998/01/01

New model for reflection high-energy electron diffraction intensity oscillations

@article{ author = { W. Braun and L. Däweritz and K. H. Ploog }, title = { New model for reflection high-energy electron diffraction intensity oscillations }, journal = { Journal of Vacuum Science and Technology B }, volume = { 16 }, year = { 1998 }, pages = { 2404 } }

TY - JOUR AU - W. Braun AU - L. Däweritz AU - K. H. Ploog TI - New model for reflection high-energy electron diffraction intensity oscillations JF - Journal of Vacuum Science and Technology B JA - J. Vac. Sci. Technol. B J1 - JVSTB VL - 16 SP - 2404 PY - 1998/01/01

Origin of electron diffraction oscillations during crystal growth

@article{ author = { W. Braun and L. Däweritz and K. H. Ploog }, title = { Origin of electron diffraction oscillations during crystal growth }, journal = { Physical Review Letters }, volume = { 80 }, year = { 1998 }, pages = { 4935 } }

TY - JOUR AU - W. Braun AU - L. Däweritz AU - K. H. Ploog TI - Origin of electron diffraction oscillations during crystal growth JF - Physical Review Letters JA - Phys. Rev. Lett. J1 - PRL VL - 80 SP - 4935 PY - 1998/01/01

Surface morphology dependence of plasmon inelastic scattering in RHEED

@article{ author = { W. Braun and L. Däweritz and K. H. Ploog }, title = { Surface morphology dependence of plasmon inelastic scattering in RHEED }, journal = { Surface Science }, volume = { 399 }, year = { 1998 }, pages = { 234 } }

TY - JOUR AU - W. Braun AU - L. Däweritz AU - K. H. Ploog TI - Surface morphology dependence of plasmon inelastic scattering in RHEED JF - Surface Science JA - Surf. Sci. J1 - SuSc VL - 399 SP - 234 PY - 1998/01/01

Ellipsometric investigations of piezooptical effects

@article{ author = { M. Cardona and D. Rönnow and P. V. Santos }, title = { Ellipsometric investigations of piezooptical effects }, journal = { Thin Solid Films }, volume = { 313/314 }, year = { 1998 }, pages = { 10 } }

TY - JOUR AU - M. Cardona AU - D. Rönnow AU - P. V. Santos TI - Ellipsometric investigations of piezooptical effects JF - Thin Solid Films JA - Thin Solid Films J1 - TSF VL - 313/314 SP - 10 PY - 1998/01/01

Acoustic phase velocity measurements with nanometer resolution by scanning acoustic force microscopy

@article{ author = { E. Chilla and T. Hesjedal and H. J. Fröhlich }, title = { Acoustic phase velocity measurements with nanometer resolution by scanning acoustic force microscopy }, journal = { Applied Physics A: Materials Science & Processing }, volume = { 66 }, year = { 1998 }, pages = { S223 } }

TY - JOUR AU - E. Chilla AU - T. Hesjedal AU - H. J. Fröhlich TI - Acoustic phase velocity measurements with nanometer resolution by scanning acoustic force microscopy JF - Applied Physics A: Materials Science & Processing JA - Appl. Phys. A: Mater. Sci. Process. J1 - APA VL - 66 SP - S223 PY - 1998/01/01

Improved accuracy in monitoring Si monolayer incorporation in GaAs during molecular beam epitaxy

@article{ author = { L. Däweritz and P. Schützendübe and M. Reiche and K. H. Ploog }, title = { Improved accuracy in monitoring Si monolayer incorporation in GaAs during molecular beam epitaxy }, journal = { Journal of Vacuum Science and Technology A }, volume = { 16 }, year = { 1998 }, pages = { 1969 } }

TY - JOUR AU - L. Däweritz AU - P. Schützendübe AU - M. Reiche AU - K. H. Ploog TI - Improved accuracy in monitoring Si monolayer incorporation in GaAs during molecular beam epitaxy JF - Journal of Vacuum Science and Technology A JA - J. Vac. Sci. Technol. A J1 - JVSTA VL - 16 SP - 1969 PY - 1998/01/01

Ordered incorporation of dopants in GaAs: A new route to overcome solubility limits

@article{ author = { L. Däweritz and P. Schützendübe and M. Reiche and K. H. Ploog }, title = { Ordered incorporation of dopants in GaAs: A new route to overcome solubility limits }, journal = { Proceedings of the IEEE 24th International Symposium on Compound Semiconductors; edited by M. Melloch and M. A. Reed, IOP Conf. Ser. }, volume = { 156 }, year = { 1998 }, pages = { 87 } }

TY - JOUR AU - L. Däweritz AU - P. Schützendübe AU - M. Reiche AU - K. H. Ploog TI - Ordered incorporation of dopants in GaAs: A new route to overcome solubility limits JF - Proceedings of the IEEE 24th International Symposium on Compound Semiconductors; edited by M. Melloch and M. A. Reed, IOP Conf. Ser. JA - Proc. ISCS 24 J1 - - VL - 156 SP - 87 PY - 1998/01/01

Real-time analysis of Si monolayer formation on GaAs(001) during MBE

@article{ author = { L. Däweritz and P. Schützendübe and M. Reiche and K. H. Ploog }, title = { Real-time analysis of Si monolayer formation on GaAs(001) during MBE }, journal = { Surface Science }, volume = { 402--404 }, year = { 1998 }, pages = { 257 } }

TY - JOUR AU - L. Däweritz AU - P. Schützendübe AU - M. Reiche AU - K. H. Ploog TI - Real-time analysis of Si monolayer formation on GaAs(001) during MBE JF - Surface Science JA - Surf. Sci. J1 - SuSc VL - 402--404 SP - 257 PY - 1998/01/01

Validity of Vegard’s rule for the lattice parameter and the stiffness elastic constant ratios of the AlGaAs ternary compound

@article{ author = { L. DeCaro and C. Giannini and L. Tapfer and H.-P. Schönherr and L. Däweritz and K. H. Ploog }, title = { Validity of Vegard’s rule for the lattice parameter and the stiffness elastic constant ratios of the AlGaAs ternary compound }, journal = { Solid State Communications }, volume = { 108 }, year = { 1998 }, pages = { 77 } }

TY - JOUR AU - L. DeCaro AU - C. Giannini AU - L. Tapfer AU - H.-P. Schönherr AU - L. Däweritz AU - K. H. Ploog TI - Validity of Vegard’s rule for the lattice parameter and the stiffness elastic constant ratios of the AlGaAs ternary compound JF - Solid State Communications JA - Solid State Commun. J1 - SSC VL - 108 SP - 77 PY - 1998/01/01

Capacitance spectroscopy of the fractional quantum Hall effect

@article{ author = { S. I. Dorozhkin and M. O. Dorokhova and R. J. Haug and K. Ploog }, title = { Capacitance spectroscopy of the fractional quantum Hall effect }, journal = { Uspekhi Fizicheskikh Nauk (Physics-Uspekhi) }, volume = { 168 (41) }, year = { 1998 }, pages = { 135 (127) } }

TY - JOUR AU - S. I. Dorozhkin AU - M. O. Dorokhova AU - R. J. Haug AU - K. Ploog TI - Capacitance spectroscopy of the fractional quantum Hall effect JF - Uspekhi Fizicheskikh Nauk (Physics-Uspekhi) JA - Map. Fiz. Nauk [Phys. Usp.] J1 - PhUs VL - 168 (41) SP - 135 (127) PY - 1998/01/01

Extremely high conductivities in modulation-doped GaAs and Ga(In)As quantum well structures with AlAs/GaAs type-II-superlattice

@article{ author = { K.-J. Friedland and R. Hey and H. Kostial and K. H. Ploog }, title = { Extremely high conductivities in modulation-doped GaAs and Ga(In)As quantum well structures with AlAs/GaAs type-II-superlattice }, journal = { Proceedings of the IEEE 24th International Symposium on Compound Semiconductors; edited by M. Melloch and M. A. Reed, IOP Conf. Ser. }, volume = { 156 }, year = { 1998 }, pages = { 79 } }

TY - JOUR AU - K.-J. Friedland AU - R. Hey AU - H. Kostial AU - K. H. Ploog TI - Extremely high conductivities in modulation-doped GaAs and Ga(In)As quantum well structures with AlAs/GaAs type-II-superlattice JF - Proceedings of the IEEE 24th International Symposium on Compound Semiconductors; edited by M. Melloch and M. A. Reed, IOP Conf. Ser. JA - Proc. ISCS 24 J1 - - VL - 156 SP - 79 PY - 1998/01/01

Reduction of the remote impurity scattering in heavily modulation-doped GaAs and (GaIn)As quantum wells with AlAs/GaAs type-II-superlattice barriers

@article{ author = { K.-J. Friedland and R. Hey and H. Kostial and K. H. Ploog }, title = { Reduction of the remote impurity scattering in heavily modulation-doped GaAs and (GaIn)As quantum wells with AlAs/GaAs type-II-superlattice barriers }, journal = { Japanese Journal of Applied Physics, Part 1 }, volume = { 37 }, year = { 1998 }, pages = { 1340 } }

TY - JOUR AU - K.-J. Friedland AU - R. Hey AU - H. Kostial AU - K. H. Ploog TI - Reduction of the remote impurity scattering in heavily modulation-doped GaAs and (GaIn)As quantum wells with AlAs/GaAs type-II-superlattice barriers JF - Japanese Journal of Applied Physics, Part 1 JA - Jpn. J. Appl. Phys., Part 1 J1 - JJAP1 VL - 37 SP - 1340 PY - 1998/01/01

Suppression of the localization in the two-dimensional conductivity of Si-delta-doped GaAs by Mn co-doping

@article{ author = { K.-J. Friedland and I. S. Shlimak and P. Schützendübe }, title = { Suppression of the localization in the two-dimensional conductivity of Si-delta-doped GaAs by Mn co-doping }, journal = { Physica B: Condensed Matter }, volume = { 249--251 }, year = { 1998 }, pages = { 758 } }

TY - JOUR AU - K.-J. Friedland AU - I. S. Shlimak AU - P. Schützendübe TI - Suppression of the localization in the two-dimensional conductivity of Si-delta-doped GaAs by Mn co-doping JF - Physica B: Condensed Matter JA - Physica B J1 - PhB VL - 249--251 SP - 758 PY - 1998/01/01

Picosecond switching due to electron tunneling and avalanche in a GaAs/Al_xGa_1-xAs diode

@article{ author = { A. Geivzutis and A. Krotkus and A. Reklaitis and M. Asche }, title = { Picosecond switching due to electron tunneling and avalanche in a GaAs/Al_xGa_1-xAs diode }, journal = { Electronics Letters }, volume = { 34 }, year = { 1998 }, pages = { 1434 } }

TY - JOUR AU - A. Geivzutis AU - A. Krotkus AU - A. Reklaitis AU - M. Asche TI - Picosecond switching due to electron tunneling and avalanche in a GaAs/Al_xGa_1-xAs diode JF - Electronics Letters JA - Electron. Lett. J1 - ElLe VL - 34 SP - 1434 PY - 1998/01/01

Hot electrons and space charge waves in superlattices

@article{ author = { H.T. Grahn }, title = { Hot electrons and space charge waves in superlattices }, journal = { Hot Electrons in Semiconductors: Physics and Devices; edited by N. Balkan (Clarendon Press, Oxford, 1998) }, volume = { }, year = { 1998 }, pages = { 357 } }

TY - JOUR AU - H.T. Grahn TI - Hot electrons and space charge waves in superlattices JF - Hot Electrons in Semiconductors: Physics and Devices; edited by N. Balkan (Clarendon Press, Oxford, 1998) JA - HESPD J1 - - VL - SP - 357 PY - 1998/01/01

Temperature dependence of the photoluminescence decay time in thin GaN layers on 6H-SiC(0001)

@article{ author = { H.T. Grahn and J. Ringling and O. Brandt and B. Yang and K. Ploog and J. Off and F. Scholz }, title = { Temperature dependence of the photoluminescence decay time in thin GaN layers on 6H-SiC(0001) }, journal = { Proceedings of the 2nd International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 1998); edited by K. Onabe, K. Hiramatsu, K. Itaya, and Y. Nakano (Ohmsha, Ltd., Tokyo, 1998) }, volume = { }, year = { 1998 }, pages = { 202 } }

TY - JOUR AU - H.T. Grahn AU - J. Ringling AU - O. Brandt AU - B. Yang AU - K. Ploog AU - J. Off AU - F. Scholz TI - Temperature dependence of the photoluminescence decay time in thin GaN layers on 6H-SiC(0001) JF - Proceedings of the 2nd International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 1998); edited by K. Onabe, K. Hiramatsu, K. Itaya, and Y. Nakano (Ohmsha, Ltd., Tokyo, 1998) JA - Proc. ISBLLED 1998 J1 - - VL - SP - 202 PY - 1998/01/01

Intensity dependence of superradiant emission from radiatively coupled excitons in multiple-quantum-well Bragg structures

@article{ author = { S. Haas and T. Stroucken and M. Hübner and J. Kuhl and B. Grote and A. Knorr and F. Jahnke and S. W. Koch and R. Hey and K. Ploog }, title = { Intensity dependence of superradiant emission from radiatively coupled excitons in multiple-quantum-well Bragg structures }, journal = { Physical Review B: Solid State }, volume = { 57 }, year = { 1998 }, pages = { 14860 } }

TY - JOUR AU - S. Haas AU - T. Stroucken AU - M. Hübner AU - J. Kuhl AU - B. Grote AU - A. Knorr AU - F. Jahnke AU - S. W. Koch AU - R. Hey AU - K. Ploog TI - Intensity dependence of superradiant emission from radiatively coupled excitons in multiple-quantum-well Bragg structures JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 57 SP - 14860 PY - 1998/01/01

Interaction between Sb and Bi adsorbates on the GaAs(110) surface

@article{ author = { P. Haier and P. V. Santos and N. Esser and W. Richter }, title = { Interaction between Sb and Bi adsorbates on the GaAs(110) surface }, journal = { Surface Science }, volume = { 399 }, year = { 1998 }, pages = { 264 } }

TY - JOUR AU - P. Haier AU - P. V. Santos AU - N. Esser AU - W. Richter TI - Interaction between Sb and Bi adsorbates on the GaAs(110) surface JF - Surface Science JA - Surf. Sci. J1 - SuSc VL - 399 SP - 264 PY - 1998/01/01

Intersubband relaxation rates of a two-dimensional electron gas under high magnetic fields

@article{ author = { C. Hartmann and G. Martinez and A. Fischer and W. Braun and K. Ploog }, title = { Intersubband relaxation rates of a two-dimensional electron gas under high magnetic fields }, journal = { Physical Review Letters }, volume = { 80 }, year = { 1998 }, pages = { 810 } }

TY - JOUR AU - C. Hartmann AU - G. Martinez AU - A. Fischer AU - W. Braun AU - K. Ploog TI - Intersubband relaxation rates of a two-dimensional electron gas under high magnetic fields JF - Physical Review Letters JA - Phys. Rev. Lett. J1 - PRL VL - 80 SP - 810 PY - 1998/01/01

Electron transport in MIS-like GaAs/Al_xGa_1-xAs heterostructures with nanostructured gates

@article{ author = { J. Herfort and D. G. Austing and Y. Hirayama }, title = { Electron transport in MIS-like GaAs/Al_xGa_1-xAs heterostructures with nanostructured gates }, journal = { Solid-State Electronics }, volume = { 42 }, year = { 1998 }, pages = { 1135 } }

TY - JOUR AU - J. Herfort AU - D. G. Austing AU - Y. Hirayama TI - Electron transport in MIS-like GaAs/Al_xGa_1-xAs heterostructures with nanostructured gates JF - Solid-State Electronics JA - Solid-State Electron. J1 - SSE VL - 42 SP - 1135 PY - 1998/01/01

Force microscopy for the investigation of high-frequency surface acoustic wave devices

@article{ author = { T. Hesjedal and E. Chilla and H. J. Fröhlich }, title = { Force microscopy for the investigation of high-frequency surface acoustic wave devices }, journal = { Applied Physics A: Materials Science & Processing }, volume = { 66 }, year = { 1998 }, pages = { S325 } }

TY - JOUR AU - T. Hesjedal AU - E. Chilla AU - H. J. Fröhlich TI - Force microscopy for the investigation of high-frequency surface acoustic wave devices JF - Applied Physics A: Materials Science & Processing JA - Appl. Phys. A: Mater. Sci. Process. J1 - APA VL - 66 SP - S325 PY - 1998/01/01

Imaging of surface atoms revolving on elliptical trajectories

@article{ author = { T. Hesjedal and E. Chilla and H. J. Fröhlich }, title = { Imaging of surface atoms revolving on elliptical trajectories }, journal = { Applied Physics A: Materials Science & Processing }, volume = { 66 }, year = { 1998 }, pages = { S353 } }

TY - JOUR AU - T. Hesjedal AU - E. Chilla AU - H. J. Fröhlich TI - Imaging of surface atoms revolving on elliptical trajectories JF - Applied Physics A: Materials Science & Processing JA - Appl. Phys. A: Mater. Sci. Process. J1 - APA VL - 66 SP - S353 PY - 1998/01/01

Influence of the growth conditions for GaAs quantum wells and composition fluctuations in Al(Ga)As barriers on exciton and electron localization

@article{ author = { R. Hey and M. Ramsteiner and M. Wassermeier and K.-J. Friedland and B. Jenichen and L. Däweritz and K. H. Ploog }, title = { Influence of the growth conditions for GaAs quantum wells and composition fluctuations in Al(Ga)As barriers on exciton and electron localization }, journal = { Physica E: Low-dimensional Systems and Nanostructures }, volume = { 2 }, year = { 1998 }, pages = { 867 } }

TY - JOUR AU - R. Hey AU - M. Ramsteiner AU - M. Wassermeier AU - K.-J. Friedland AU - B. Jenichen AU - L. Däweritz AU - K. H. Ploog TI - Influence of the growth conditions for GaAs quantum wells and composition fluctuations in Al(Ga)As barriers on exciton and electron localization JF - Physica E: Low-dimensional Systems and Nanostructures JA - Physica E (Amsterdam) J1 - PhE VL - 2 SP - 867 PY - 1998/01/01

Visualization of lateral movement of current filaments in n-GaAs

@article{ author = { H. Kostial and J. Hirschinger and W. Prettl }, title = { Visualization of lateral movement of current filaments in n-GaAs }, journal = { Solid State Communications }, volume = { 106 }, year = { 1998 }, pages = { 187 } }

TY - JOUR AU - H. Kostial AU - J. Hirschinger AU - W. Prettl TI - Visualization of lateral movement of current filaments in n-GaAs JF - Solid State Communications JA - Solid State Commun. J1 - SSC VL - 106 SP - 187 PY - 1998/01/01

Transition from superradiant free-polarization decay to subradiant photon-echo

@article{ author = { M. Hübner and J. Kuhl and B. Grote and T. Stroucken and S. W. Koch and R. Hey and K. H. Ploog }, title = { Transition from superradiant free-polarization decay to subradiant photon-echo }, journal = { Solid State Communications }, volume = { 108 }, year = { 1998 }, pages = { 787 } }

TY - JOUR AU - M. Hübner AU - J. Kuhl AU - B. Grote AU - T. Stroucken AU - S. W. Koch AU - R. Hey AU - K. H. Ploog TI - Transition from superradiant free-polarization decay to subradiant photon-echo JF - Solid State Communications JA - Solid State Commun. J1 - SSC VL - 108 SP - 787 PY - 1998/01/01

Suppression of the Bragg reflection in semiconductor multiple quantum wells by excitation induced dephasing

@article{ author = { M. Hübner and J. Kuhl and S. Haas and T. Stroucken and S. W. Koch and R. Hey and K. Ploog }, title = { Suppression of the Bragg reflection in semiconductor multiple quantum wells by excitation induced dephasing }, journal = { Solid State Communications }, volume = { 105 }, year = { 1998 }, pages = { 105 } }

TY - JOUR AU - M. Hübner AU - J. Kuhl AU - S. Haas AU - T. Stroucken AU - S. W. Koch AU - R. Hey AU - K. Ploog TI - Suppression of the Bragg reflection in semiconductor multiple quantum wells by excitation induced dephasing JF - Solid State Communications JA - Solid State Commun. J1 - SSC VL - 105 SP - 105 PY - 1998/01/01

Correlation of cathodoluminescence and EBIC contrast in GaAs/Al_xGa_1-xAs quantum well structures

@article{ author = { U. Jahn and R. Hey and H. Kostial and H.T. Grahn }, title = { Correlation of cathodoluminescence and EBIC contrast in GaAs/Al_xGa_1-xAs quantum well structures }, journal = { Solid State Phenomena }, volume = { 63/64 }, year = { 1998 }, pages = { 473 } }

TY - JOUR AU - U. Jahn AU - R. Hey AU - H. Kostial AU - H.T. Grahn TI - Correlation of cathodoluminescence and EBIC contrast in GaAs/Al_xGa_1-xAs quantum well structures JF - Solid State Phenomena JA - Solid State Phenom. J1 - SSP VL - 63/64 SP - 473 PY - 1998/01/01

Lateral periodicity and elastic stress relaxation in GaInAsP quantum wires on InP investigated by x-ray diffractometry

@article{ author = { B. Jenichen and H.T. Grahn and T. Kojima and S. Arai }, title = { Lateral periodicity and elastic stress relaxation in GaInAsP quantum wires on InP investigated by x-ray diffractometry }, journal = { Journal of Applied Physics }, volume = { 83 }, year = { 1998 }, pages = { 5810 } }

TY - JOUR AU - B. Jenichen AU - H.T. Grahn AU - T. Kojima AU - S. Arai TI - Lateral periodicity and elastic stress relaxation in GaInAsP quantum wires on InP investigated by x-ray diffractometry JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 83 SP - 5810 PY - 1998/01/01

Electronic and vibrational Raman scattering in resonance with yellow luminescence transitions in GaN on sapphire substrate

@article{ author = { D.-S. Jiang and M. Ramsteiner and O. Brandt and K. H. Ploog and H. Tews and A. Graber and R. Averbeck and H. Riechert }, title = { Electronic and vibrational Raman scattering in resonance with yellow luminescence transitions in GaN on sapphire substrate }, journal = { Proceedings of the IEEE 24th International Symposium on Compound Semiconductors; edited by M. Melloch and M. A. Reed, IOP Conf. Ser. }, volume = { 156 }, year = { 1998 }, pages = { 211 } }

TY - JOUR AU - D.-S. Jiang AU - M. Ramsteiner AU - O. Brandt AU - K. H. Ploog AU - H. Tews AU - A. Graber AU - R. Averbeck AU - H. Riechert TI - Electronic and vibrational Raman scattering in resonance with yellow luminescence transitions in GaN on sapphire substrate JF - Proceedings of the IEEE 24th International Symposium on Compound Semiconductors; edited by M. Melloch and M. A. Reed, IOP Conf. Ser. JA - Proc. ISCS 24 J1 - - VL - 156 SP - 211 PY - 1998/01/01

Defect-induced Raman scattering in resonance with yellow luminescence transitions in hexagonal GaN on a sapphire substrate

@article{ author = { D. S. Jiang and M. Ramsteiner and K. H. Ploog and H. Tews and A. Graber and R. Averbeck and H. Riechert }, title = { Defect-induced Raman scattering in resonance with yellow luminescence transitions in hexagonal GaN on a sapphire substrate }, journal = { Applied Physics Letters }, volume = { 72 }, year = { 1998 }, pages = { 365 } }

TY - JOUR AU - D. S. Jiang AU - M. Ramsteiner AU - K. H. Ploog AU - H. Tews AU - A. Graber AU - R. Averbeck AU - H. Riechert TI - Defect-induced Raman scattering in resonance with yellow luminescence transitions in hexagonal GaN on a sapphire substrate JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 72 SP - 365 PY - 1998/01/01

Raman scattering and photoluminescence properties of MBE-grown GaN on sapphire

@article{ author = { D.-S. Jiang and M. Ramsteiner and K. Ploog and H. Tews and A. Graber and H. Riechert }, title = { Raman scattering and photoluminescence properties of MBE-grown GaN on sapphire }, journal = { Radiation Effects and Defects in Solids }, volume = { 146 }, year = { 1998 }, pages = { 99 } }

TY - JOUR AU - D.-S. Jiang AU - M. Ramsteiner AU - K. Ploog AU - H. Tews AU - A. Graber AU - H. Riechert TI - Raman scattering and photoluminescence properties of MBE-grown GaN on sapphire JF - Radiation Effects and Defects in Solids JA - Radiat. Eff. Defect Solids J1 - REDS VL - 146 SP - 99 PY - 1998/01/01

Excitonic and free-carrier quantum beats created by femtosecond excitation at the band edge of GaAs

@article{ author = { M. Joschko and M. Hasselbeck and M. Woerner and T. Elsaesser and R. Hey and H. Kostial and K. Ploog }, title = { Excitonic and free-carrier quantum beats created by femtosecond excitation at the band edge of GaAs }, journal = { Physical Review B: Solid State }, volume = { 58 }, year = { 1998 }, pages = { 10470 } }

TY - JOUR AU - M. Joschko AU - M. Hasselbeck AU - M. Woerner AU - T. Elsaesser AU - R. Hey AU - H. Kostial AU - K. Ploog TI - Excitonic and free-carrier quantum beats created by femtosecond excitation at the band edge of GaAs JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 58 SP - 10470 PY - 1998/01/01

Coherent inter-valence band polarizations in bulk GaAs studied on a sub-100 fs time scale

@article{ author = { M. Joschko and M. Woerner and T. Elsaesser and E. Binder and T. Kuhn and R. Hey and H. Kostial and K. Ploog }, title = { Coherent inter-valence band polarizations in bulk GaAs studied on a sub-100 fs time scale }, journal = { Physica Status Solidi B }, volume = { 206 }, year = { 1998 }, pages = { 299 } }

TY - JOUR AU - M. Joschko AU - M. Woerner AU - T. Elsaesser AU - E. Binder AU - T. Kuhn AU - R. Hey AU - H. Kostial AU - K. Ploog TI - Coherent inter-valence band polarizations in bulk GaAs studied on a sub-100 fs time scale JF - Physica Status Solidi B JA - Phys. Status Solidi B J1 - PSSB VL - 206 SP - 299 PY - 1998/01/01

Spectral-ellipsometric investigations on semiconductor resonators

@article{ author = { G. Jungk }, title = { Spectral-ellipsometric investigations on semiconductor resonators }, journal = { Thin Solid Films }, volume = { 313 }, year = { 1998 }, pages = { 594 } }

TY - JOUR AU - G. Jungk TI - Spectral-ellipsometric investigations on semiconductor resonators JF - Thin Solid Films JA - Thin Solid Films J1 - TSF VL - 313 SP - 594 PY - 1998/01/01

Spectroscopic ellipsometry on silicon-oxide films on silicon

@article{ author = { G. Jungk and T. Grabolla }, title = { Spectroscopic ellipsometry on silicon-oxide films on silicon }, journal = { Thin Solid Films }, volume = { 335 }, year = { 1998 }, pages = { 253 } }

TY - JOUR AU - G. Jungk AU - T. Grabolla TI - Spectroscopic ellipsometry on silicon-oxide films on silicon JF - Thin Solid Films JA - Thin Solid Films J1 - TSF VL - 335 SP - 253 PY - 1998/01/01

Balance equations for hot-electron transport with intra-collisional field effects

@article{ author = { P. Kleinert }, title = { Balance equations for hot-electron transport with intra-collisional field effects }, journal = { Physica B: Condensed Matter }, volume = { 245 }, year = { 1998 }, pages = { 225 } }

TY - JOUR AU - P. Kleinert TI - Balance equations for hot-electron transport with intra-collisional field effects JF - Physica B: Condensed Matter JA - Physica B J1 - PhB VL - 245 SP - 225 PY - 1998/01/01

High-field miniband transport in semiconductor superlattices under the influence of a transverse magnetic field

@article{ author = { P. Kleinert }, title = { High-field miniband transport in semiconductor superlattices under the influence of a transverse magnetic field }, journal = { Physica B: Condensed Matter }, volume = { 249--251 }, year = { 1998 }, pages = { 891 } }

TY - JOUR AU - P. Kleinert TI - High-field miniband transport in semiconductor superlattices under the influence of a transverse magnetic field JF - Physica B: Condensed Matter JA - Physica B J1 - PhB VL - 249--251 SP - 891 PY - 1998/01/01

Cyclotron-Stark resonances in superlattices under the influence of strong THz radiation

@article{ author = { P. Kleinert and V.V. Bryksin }, title = { Cyclotron-Stark resonances in superlattices under the influence of strong THz radiation }, journal = { Physica B: Condensed Matter }, volume = { 256--258 }, year = { 1998 }, pages = { 356 } }

TY - JOUR AU - P. Kleinert AU - V.V. Bryksin TI - Cyclotron-Stark resonances in superlattices under the influence of strong THz radiation JF - Physica B: Condensed Matter JA - Physica B J1 - PhB VL - 256--258 SP - 356 PY - 1998/01/01

Microscopic reflection difference spectroscopy on semiconductor nanostructures

@article{ author = { B. Koopmans and P. V. Santos and M. Cardona }, title = { Microscopic reflection difference spectroscopy on semiconductor nanostructures }, journal = { Physica Status Solidi A }, volume = { 170 }, year = { 1998 }, pages = { 307 } }

TY - JOUR AU - B. Koopmans AU - P. V. Santos AU - M. Cardona TI - Microscopic reflection difference spectroscopy on semiconductor nanostructures JF - Physica Status Solidi A JA - Phys. Status Solidi A J1 - PSSA VL - 170 SP - 307 PY - 1998/01/01

Optical acitivity in semiconductors: Stress and confinement effects

@article{ author = { B. Koopmans and P. V. Santos and M. Cardona }, title = { Optical acitivity in semiconductors: Stress and confinement effects }, journal = { Physica Status Solidi B }, volume = { 205 }, year = { 1998 }, pages = { 419 } }

TY - JOUR AU - B. Koopmans AU - P. V. Santos AU - M. Cardona TI - Optical acitivity in semiconductors: Stress and confinement effects JF - Physica Status Solidi B JA - Phys. Status Solidi B J1 - PSSB VL - 205 SP - 419 PY - 1998/01/01

Electron paramagnetic resonance and photoluminescence studies of chromium in SrS

@article{ author = { J. Kreissl and U. Troppenz and B. Hüttl and L. Schrottke and C. Fouassier }, title = { Electron paramagnetic resonance and photoluminescence studies of chromium in SrS }, journal = { Applied Physics Letters }, volume = { 72 }, year = { 1998 }, pages = { 1232 } }

TY - JOUR AU - J. Kreissl AU - U. Troppenz AU - B. Hüttl AU - L. Schrottke AU - C. Fouassier TI - Electron paramagnetic resonance and photoluminescence studies of chromium in SrS JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 72 SP - 1232 PY - 1998/01/01

Growth mode-related generation of electron traps at the inverted AlAs/GaAs interface

@article{ author = { P. Krispin and R. Hey and H. Kostial and K. H. Ploog }, title = { Growth mode-related generation of electron traps at the inverted AlAs/GaAs interface }, journal = { Journal of Applied Physics }, volume = { 83 }, year = { 1998 }, pages = { 1496 } }

TY - JOUR AU - P. Krispin AU - R. Hey AU - H. Kostial AU - K. H. Ploog TI - Growth mode-related generation of electron traps at the inverted AlAs/GaAs interface JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 83 SP - 1496 PY - 1998/01/01

Deep and shallow electronic states at ultrathin InAs insertions in GaAs investigated by capacitance spectroscopy

@article{ author = { P. Krispin and J.-L. Lazzari and H. Kostial }, title = { Deep and shallow electronic states at ultrathin InAs insertions in GaAs investigated by capacitance spectroscopy }, journal = { Journal of Applied Physics }, volume = { 84 }, year = { 1998 }, pages = { 6135 } }

TY - JOUR AU - P. Krispin AU - J.-L. Lazzari AU - H. Kostial TI - Deep and shallow electronic states at ultrathin InAs insertions in GaAs investigated by capacitance spectroscopy JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 84 SP - 6135 PY - 1998/01/01

Voltage switching and oscillations in a single barrier heterostructure hot-electron diode

@article{ author = { A. Krotkus and A. Reklaitis and A. Geivzutis and M. Asche }, title = { Voltage switching and oscillations in a single barrier heterostructure hot-electron diode }, journal = { Journal of Applied Physics }, volume = { 84 }, year = { 1998 }, pages = { 3980 } }

TY - JOUR AU - A. Krotkus AU - A. Reklaitis AU - A. Geivzutis AU - M. Asche TI - Voltage switching and oscillations in a single barrier heterostructure hot-electron diode JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 84 SP - 3980 PY - 1998/01/01

Microscopic balance equations for the real-space transfer in multiple quantum wells

@article{ author = { V. Kubrak and P. Kleinert }, title = { Microscopic balance equations for the real-space transfer in multiple quantum wells }, journal = { Journal of Physics: Condensed Matter }, volume = { 10 }, year = { 1998 }, pages = { 7391 } }

TY - JOUR AU - V. Kubrak AU - P. Kleinert TI - Microscopic balance equations for the real-space transfer in multiple quantum wells JF - Journal of Physics: Condensed Matter JA - J. Phys.: Condens. Matter J1 - JPCM VL - 10 SP - 7391 PY - 1998/01/01

Impurity-assisted 2D-3D transfer of hot electrons

@article{ author = { V. Kubrak and P. Kleinert and M. Asche }, title = { Impurity-assisted 2D-3D transfer of hot electrons }, journal = { Semiconductor Science and Technology }, volume = { 13 }, year = { 1998 }, pages = { 277 } }

TY - JOUR AU - V. Kubrak AU - P. Kleinert AU - M. Asche TI - Impurity-assisted 2D-3D transfer of hot electrons JF - Semiconductor Science and Technology JA - Semicond. Sci. Technol. J1 - SST VL - 13 SP - 277 PY - 1998/01/01

Reflectance difference spectroscopy of GaAs asymmetric surface quantum wells above the fundamental gap

@article{ author = { L. F. Lastras-Martinez and D. Rönnow and M. Cardona and P. Specht and P. V. Santos and K. Eberl }, title = { Reflectance difference spectroscopy of GaAs asymmetric surface quantum wells above the fundamental gap }, journal = { Physica Status Solidi A }, volume = { 170 }, year = { 1998 }, pages = { 317 } }

TY - JOUR AU - L. F. Lastras-Martinez AU - D. Rönnow AU - M. Cardona AU - P. Specht AU - P. V. Santos AU - K. Eberl TI - Reflectance difference spectroscopy of GaAs asymmetric surface quantum wells above the fundamental gap JF - Physica Status Solidi A JA - Phys. Status Solidi A J1 - PSSA VL - 170 SP - 317 PY - 1998/01/01

Mapping of the local confinement potential in semiconductor nanostructures by near-field optical spectroscopy

@article{ author = { C. Lienau and A. Richter and G. Behme and M. Süptitz and T. Elsaesser and M. Ramsteiner and R. Nötzel and K. H. Ploog }, title = { Mapping of the local confinement potential in semiconductor nanostructures by near-field optical spectroscopy }, journal = { Physica Status Solidi B }, volume = { 206 }, year = { 1998 }, pages = { 153 } }

TY - JOUR AU - C. Lienau AU - A. Richter AU - G. Behme AU - M. Süptitz AU - T. Elsaesser AU - M. Ramsteiner AU - R. Nötzel AU - K. H. Ploog TI - Mapping of the local confinement potential in semiconductor nanostructures by near-field optical spectroscopy JF - Physica Status Solidi B JA - Phys. Status Solidi B J1 - PSSB VL - 206 SP - 153 PY - 1998/01/01

Nanoscale mapping of confinement potentials in single semiconductor quantum wires by near-field optical spectroscopy

@article{ author = { C. Lienau and A. Richter and G. Behme and M. Süptitz and D. Heinrich and T. Elsaesser and M. Ramsteiner and R. Nötzel and K. H. Ploog }, title = { Nanoscale mapping of confinement potentials in single semiconductor quantum wires by near-field optical spectroscopy }, journal = { Physical Review B: Solid State }, volume = { 58 }, year = { 1998 }, pages = { 2045 } }

TY - JOUR AU - C. Lienau AU - A. Richter AU - G. Behme AU - M. Süptitz AU - D. Heinrich AU - T. Elsaesser AU - M. Ramsteiner AU - R. Nötzel AU - K. H. Ploog TI - Nanoscale mapping of confinement potentials in single semiconductor quantum wires by near-field optical spectroscopy JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 58 SP - 2045 PY - 1998/01/01

Identification of electron-hole transitions in short-period GaAs/AlAs superlattices by time-resolved photoluminescence

@article{ author = { V. G. Litovchenko and D. V. Korbutyak and S. G. Krylyuk and H.T. Grahn and R. Klann and K. H. Ploog }, title = { Identification of electron-hole transitions in short-period GaAs/AlAs superlattices by time-resolved photoluminescence }, journal = { Proceedings of the Society for Optical Engineering }, volume = { 3359 }, year = { 1998 }, pages = { 182 } }

TY - JOUR AU - V. G. Litovchenko AU - D. V. Korbutyak AU - S. G. Krylyuk AU - H.T. Grahn AU - R. Klann AU - K. H. Ploog TI - Identification of electron-hole transitions in short-period GaAs/AlAs superlattices by time-resolved photoluminescence JF - Proceedings of the Society for Optical Engineering JA - Proc. SPIE Int. Soc. Opt. Eng. J1 - SPIE VL - 3359 SP - 182 PY - 1998/01/01

Interface electronic transition observed by optical second-harmonic spectroscopy in β-GaN/GaAs(001) heterostructures

@article{ author = { G. Lüpke and O. Busch and C. Meyer and H. Kurz and O. Brandt and H. Yang and A. Trampert and K. H. Ploog and G. Lucovsky }, title = { Interface electronic transition observed by optical second-harmonic spectroscopy in <span class="math"><em>β</em></span>-GaN/GaAs(001) heterostructures }, journal = { Physical Review B: Solid State }, volume = { 57 }, year = { 1998 }, pages = { 3722 } }

TY - JOUR AU - G. Lüpke AU - O. Busch AU - C. Meyer AU - H. Kurz AU - O. Brandt AU - H. Yang AU - A. Trampert AU - K. H. Ploog AU - G. Lucovsky TI - Interface electronic transition observed by optical second-harmonic spectroscopy in <span class="math"><em>β</em></span>-GaN/GaAs(001) heterostructures JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 57 SP - 3722 PY - 1998/01/01

Interface structure of (001) and (113)A GaAs/AlAs superlattices

@article{ author = { D. Lüerßen and A. Dinger and H. Kalt and W. Braun and R. Nötzel and K. Ploog and J. Tümmler and J. Geurts }, title = { Interface structure of (001) and (113)A GaAs/AlAs superlattices }, journal = { Physical Review B: Solid State }, volume = { 57 }, year = { 1998 }, pages = { 1631 } }

TY - JOUR AU - D. Lüerßen AU - A. Dinger AU - H. Kalt AU - W. Braun AU - R. Nötzel AU - K. Ploog AU - J. Tümmler AU - J. Geurts TI - Interface structure of (001) and (113)A GaAs/AlAs superlattices JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 57 SP - 1631 PY - 1998/01/01

The relocation time of the domain boundary in weakly coupled GaAs/AlAs superlattices

@article{ author = { K. J. Luo and H.T. Grahn and K. H. Ploog }, title = { The relocation time of the domain boundary in weakly coupled GaAs/AlAs superlattices }, journal = { Physical Review B: Solid State }, volume = { 57 }, year = { 1998 }, pages = { R6838 } }

TY - JOUR AU - K. J. Luo AU - H.T. Grahn AU - K. H. Ploog TI - The relocation time of the domain boundary in weakly coupled GaAs/AlAs superlattices JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 57 SP - R6838 PY - 1998/01/01

Explosive bifurcation to chaos in a weakly coupled semiconductor superlattice

@article{ author = { K. J. Luo and H.T. Grahn and K. H. Ploog and L. L. Bonilla }, title = { Explosive bifurcation to chaos in a weakly coupled semiconductor superlattice }, journal = { Physical Review Letters }, volume = { 81 }, year = { 1998 }, pages = { 1290 } }

TY - JOUR AU - K. J. Luo AU - H.T. Grahn AU - K. H. Ploog AU - L. L. Bonilla TI - Explosive bifurcation to chaos in a weakly coupled semiconductor superlattice JF - Physical Review Letters JA - Phys. Rev. Lett. J1 - PRL VL - 81 SP - 1290 PY - 1998/01/01

Influence of higher harmonics on Poincaré maps derived from current self-oscillations in a semiconductor superlattice

@article{ author = { K. J. Luo and H.T. Grahn and S. W. Teitsworth and K. H. Ploog }, title = { Influence of higher harmonics on Poincaré maps derived from current self-oscillations in a semiconductor superlattice }, journal = { Physical Review B: Solid State }, volume = { 58 }, year = { 1998 }, pages = { 12613 } }

TY - JOUR AU - K. J. Luo AU - H.T. Grahn AU - S. W. Teitsworth AU - K. H. Ploog TI - Influence of higher harmonics on Poincaré maps derived from current self-oscillations in a semiconductor superlattice JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 58 SP - 12613 PY - 1998/01/01

Si and Be intralayers at GaAs/AlAs heterojunctions: Doping effects

@article{ author = { M. Moreno and J. L. Sacedon and M. Alonso and M. Höricke and R. Hey and J. Avila and M. C. Asenio and K. Horn and K. H. Ploog }, title = { Si and Be intralayers at GaAs/AlAs heterojunctions: Doping effects }, journal = { Physical Review B: Solid State }, volume = { 58 }, year = { 1998 }, pages = { 13767 } }

TY - JOUR AU - M. Moreno AU - J. L. Sacedon AU - M. Alonso AU - M. Höricke AU - R. Hey AU - J. Avila AU - M. C. Asenio AU - K. Horn AU - K. H. Ploog TI - Si and Be intralayers at GaAs/AlAs heterojunctions: Doping effects JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 58 SP - 13767 PY - 1998/01/01

Si intralayers at GaAs/AlAs and GaAs/GaAs junctions: Polar versus nonpolar interfaces

@article{ author = { M. Moreno and H. Yang and M. Höricke and M. Alonso and J. A. Martin-Gago and R. Hey and K. Horn and J. L. Sacedon and K. H. Ploog }, title = { Si intralayers at GaAs/AlAs and GaAs/GaAs junctions: Polar versus nonpolar interfaces }, journal = { Physical Review B: Solid State }, volume = { 57 }, year = { 1998 }, pages = { 12314 } }

TY - JOUR AU - M. Moreno AU - H. Yang AU - M. Höricke AU - M. Alonso AU - J. A. Martin-Gago AU - R. Hey AU - K. Horn AU - J. L. Sacedon AU - K. H. Ploog TI - Si intralayers at GaAs/AlAs and GaAs/GaAs junctions: Polar versus nonpolar interfaces JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 57 SP - 12314 PY - 1998/01/01

Green photoluminescence from cubic In_0.4Ga_0.6N grown by radio frequency plasma-assisted molecular beam epitaxy

@article{ author = { J. R. Müllhäuser and O. Brandt and A. Trampert and B. Jenichen and K. Ploog }, title = { Green photoluminescence from cubic In_0.4Ga_0.6N grown by radio frequency plasma-assisted molecular beam epitaxy }, journal = { Applied Physics Letters }, volume = { 73 }, year = { 1998 }, pages = { 1230 } }

TY - JOUR AU - J. R. Müllhäuser AU - O. Brandt AU - A. Trampert AU - B. Jenichen AU - K. Ploog TI - Green photoluminescence from cubic In_0.4Ga_0.6N grown by radio frequency plasma-assisted molecular beam epitaxy JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 73 SP - 1230 PY - 1998/01/01

Plasma-assisted molecular beam epitaxial growth and characterization of zincblende (In,Al,Ga)N heterostructures on GaAs(001)

@article{ author = { J. R. Müllhäuser and B. Jenichen and A. Trampert and M. Wassermeier and O. Brandt and K. H. Ploog }, title = { Plasma-assisted molecular beam epitaxial growth and characterization of zincblende (In,Al,Ga)N heterostructures on GaAs(001) }, journal = { Proceedings of the Society for Optical Engineering }, volume = { 3297 }, year = { 1998 }, pages = { 48 } }

TY - JOUR AU - J. R. Müllhäuser AU - B. Jenichen AU - A. Trampert AU - M. Wassermeier AU - O. Brandt AU - K. H. Ploog TI - Plasma-assisted molecular beam epitaxial growth and characterization of zincblende (In,Al,Ga)N heterostructures on GaAs(001) JF - Proceedings of the Society for Optical Engineering JA - Proc. SPIE Int. Soc. Opt. Eng. J1 - SPIE VL - 3297 SP - 48 PY - 1998/01/01

Are cubic nitrides viable materials for optoelectronic devices?

@article{ author = { J. R. Müllhäuser and R. Klann and H. Yang and O. Brandt and K. H. Ploog }, title = { Are cubic nitrides viable materials for optoelectronic devices? }, journal = { Proceedings of the Society for Optical Engineering }, volume = { 3297 }, year = { 1998 }, pages = { 38 } }

TY - JOUR AU - J. R. Müllhäuser AU - R. Klann AU - H. Yang AU - O. Brandt AU - K. H. Ploog TI - Are cubic nitrides viable materials for optoelectronic devices? JF - Proceedings of the Society for Optical Engineering JA - Proc. SPIE Int. Soc. Opt. Eng. J1 - SPIE VL - 3297 SP - 38 PY - 1998/01/01

Short-pulse laser crystallization and structuring of a-Ge

@article{ author = { M. Mulato and D. Toet and G. Aichmayr and A. Spagenberg and P. V. Santos and I. Chambouleyron }, title = { Short-pulse laser crystallization and structuring of a-Ge }, journal = { Journal of Non-Crystalline Solids }, volume = { 227--230 }, year = { 1998 }, pages = { 930 } }

TY - JOUR AU - M. Mulato AU - D. Toet AU - G. Aichmayr AU - A. Spagenberg AU - P. V. Santos AU - I. Chambouleyron TI - Short-pulse laser crystallization and structuring of a-Ge JF - Journal of Non-Crystalline Solids JA - J. Non-Cryst. Solids J1 - JNCS VL - 227--230 SP - 930 PY - 1998/01/01

Optical second-harmonic probe for ultra-high frequency on-chip interconnects with benzocyclobutene

@article{ author = { M. Nagel and C. Meyer and H. M. Heiliger and T. Dekorsy and H. Kurz and R. Hey and K. Ploog }, title = { Optical second-harmonic probe for ultra-high frequency on-chip interconnects with benzocyclobutene }, journal = { Applied Physics Letters }, volume = { 72 }, year = { 1998 }, pages = { 1018 } }

TY - JOUR AU - M. Nagel AU - C. Meyer AU - H. M. Heiliger AU - T. Dekorsy AU - H. Kurz AU - R. Hey AU - K. Ploog TI - Optical second-harmonic probe for ultra-high frequency on-chip interconnects with benzocyclobutene JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 72 SP - 1018 PY - 1998/01/01

Oscillations of current filaments in n-GaAs caused by a magnetic field

@article{ author = { F. J. Niedernostheide and J. Hirschinger and W. Prettl and V. Novak and H. Kostial }, title = { Oscillations of current filaments in n-GaAs caused by a magnetic field }, journal = { Physical Review B: Solid State }, volume = { 58 }, year = { 1998 }, pages = { 4454 } }

TY - JOUR AU - F. J. Niedernostheide AU - J. Hirschinger AU - W. Prettl AU - V. Novak AU - H. Kostial TI - Oscillations of current filaments in n-GaAs caused by a magnetic field JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 58 SP - 4454 PY - 1998/01/01

Lateral variations of quantum-well confinement energy in triangular-shaped dot-like structures grown by molecular beam epitaxy on patterned GaAs (311)A substrates

@article{ author = { Z. C. Niu and R. Nötzel and U. Jahn and M. Ramsteiner and H.-P. Schönherr and J. Fricke and Z. B. Xiao and L. Däweritz and K. H. Ploog }, title = { Lateral variations of quantum-well confinement energy in triangular-shaped dot-like structures grown by molecular beam epitaxy on patterned GaAs (311)A substrates }, journal = { Applied Physics A: Materials Science & Processing }, volume = { 67 }, year = { 1998 }, pages = { 135 } }

TY - JOUR AU - Z. C. Niu AU - R. Nötzel AU - U. Jahn AU - M. Ramsteiner AU - H.-P. Schönherr AU - J. Fricke AU - Z. B. Xiao AU - L. Däweritz AU - K. H. Ploog TI - Lateral variations of quantum-well confinement energy in triangular-shaped dot-like structures grown by molecular beam epitaxy on patterned GaAs (311)A substrates JF - Applied Physics A: Materials Science & Processing JA - Appl. Phys. A: Mater. Sci. Process. J1 - APA VL - 67 SP - 135 PY - 1998/01/01

Formation of nanostructured surfaces during molecular beam epitaxy on square-shaped hole and mesa patterns on GaAs(311)A substrates

@article{ author = { Z. C. Niu and R. Nötzel and H.-P. Schönherr and J. Fricke and L. Däweritz and K. H. Ploog }, title = { Formation of nanostructured surfaces during molecular beam epitaxy on square-shaped hole and mesa patterns on GaAs(311)A substrates }, journal = { Journal of Crystal Growth }, volume = { 187 }, year = { 1998 }, pages = { 333 } }

TY - JOUR AU - Z. C. Niu AU - R. Nötzel AU - H.-P. Schönherr AU - J. Fricke AU - L. Däweritz AU - K. H. Ploog TI - Formation of nanostructured surfaces during molecular beam epitaxy on square-shaped hole and mesa patterns on GaAs(311)A substrates JF - Journal of Crystal Growth JA - J. Cryst. Growth J1 - JGC VL - 187 SP - 333 PY - 1998/01/01

Device quality submicron arrays of stacked sidewall quantum wires on patterned GaAs (311) substrates

@article{ author = { R. Nötzel and U. Jahn and Z. Niu and A. Trampert and J. Fricke and H.-P. Schönherr and Th. Kurt and D. Heitmann and L. Däweritz and K. H. Ploog }, title = { Device quality submicron arrays of stacked sidewall quantum wires on patterned GaAs (311) substrates }, journal = { Applied Physics Letters }, volume = { 72 }, year = { 1998 }, pages = { 2002 } }

TY - JOUR AU - R. Nötzel AU - U. Jahn AU - Z. Niu AU - A. Trampert AU - J. Fricke AU - H.-P. Schönherr AU - Th. Kurt AU - D. Heitmann AU - L. Däweritz AU - K. H. Ploog TI - Device quality submicron arrays of stacked sidewall quantum wires on patterned GaAs (311) substrates JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 72 SP - 2002 PY - 1998/01/01

Uniform quantum-dot arrays formed by natural self-faceting on patterned substrates

@article{ author = { R. Nötzel and Z. C. Niu and M. Ramsteiner and H.-P. Schönherr and A. Trampert and L. Däweritz and K. H. Ploog }, title = { Uniform quantum-dot arrays formed by natural self-faceting on patterned substrates }, journal = { Nature }, volume = { 392 }, year = { 1998 }, pages = { 56 } }

TY - JOUR AU - R. Nötzel AU - Z. C. Niu AU - M. Ramsteiner AU - H.-P. Schönherr AU - A. Trampert AU - L. Däweritz AU - K. H. Ploog TI - Uniform quantum-dot arrays formed by natural self-faceting on patterned substrates JF - Nature JA - Nature J1 - Nat VL - 392 SP - 56 PY - 1998/01/01

Enhanced optical band-gap modulation in strained (InGa)As sidewall quantum wires on patterned GaAs(311)A substrates

@article{ author = { R. Nötzel and M. Ramsteiner and Z. Niu and L. Däweritz and K. H. Ploog }, title = { Enhanced optical band-gap modulation in strained (InGa)As sidewall quantum wires on patterned GaAs(311)A substrates }, journal = { Physica E: Low-dimensional Systems and Nanostructures }, volume = { 2 }, year = { 1998 }, pages = { 979 } }

TY - JOUR AU - R. Nötzel AU - M. Ramsteiner AU - Z. Niu AU - L. Däweritz AU - K. H. Ploog TI - Enhanced optical band-gap modulation in strained (InGa)As sidewall quantum wires on patterned GaAs(311)A substrates JF - Physica E: Low-dimensional Systems and Nanostructures JA - Physica E (Amsterdam) J1 - PhE VL - 2 SP - 979 PY - 1998/01/01

Patterned high-index substrates as templates for novel quantum-wire and dot arrays: Growth and potential applications

@article{ author = { R. Nötzel and M. Ramsteiner and Z. Niu and L. Däweritz and K. H. Ploog }, title = { Patterned high-index substrates as templates for novel quantum-wire and dot arrays: Growth and potential applications }, journal = { Proceedings of the IEEE 24th International Symposium on Compound Semiconductors; edited by M. Melloch and M. A. Reed, IOP Conf. Ser. }, volume = { 156 }, year = { 1998 }, pages = { 65 } }

TY - JOUR AU - R. Nötzel AU - M. Ramsteiner AU - Z. Niu AU - L. Däweritz AU - K. H. Ploog TI - Patterned high-index substrates as templates for novel quantum-wire and dot arrays: Growth and potential applications JF - Proceedings of the IEEE 24th International Symposium on Compound Semiconductors; edited by M. Melloch and M. A. Reed, IOP Conf. Ser. JA - Proc. ISCS 24 J1 - - VL - 156 SP - 65 PY - 1998/01/01

Atomic-hydrogen-assisted molecular beam epitaxy on patterned GaAs (311)A substrates: Formation of highly uniform quantum-dot arrays

@article{ author = { R. Nötzel and M. Ramsteiner and Z. C. Niu and A. Trampert and L. Däweritz and K. H. Ploog }, title = { Atomic-hydrogen-assisted molecular beam epitaxy on patterned GaAs (311)A substrates: Formation of highly uniform quantum-dot arrays }, journal = { Journal of Electronic Materials }, volume = { 27 }, year = { 1998 }, pages = { 36 } }

TY - JOUR AU - R. Nötzel AU - M. Ramsteiner AU - Z. C. Niu AU - A. Trampert AU - L. Däweritz AU - K. H. Ploog TI - Atomic-hydrogen-assisted molecular beam epitaxy on patterned GaAs (311)A substrates: Formation of highly uniform quantum-dot arrays JF - Journal of Electronic Materials JA - J. Electron. Mater. J1 - JEM VL - 27 SP - 36 PY - 1998/01/01

Photocurrent self-oscillations in undoped GaAs/AlAs superlattices modulated by an external ac voltage

@article{ author = { N. Ohtani and N. Egami and K. Fujiwara and H.T. Grahn }, title = { Photocurrent self-oscillations in undoped GaAs/AlAs superlattices modulated by an external ac voltage }, journal = { Solid-State Electronics }, volume = { 42 }, year = { 1998 }, pages = { 1509 } }

TY - JOUR AU - N. Ohtani AU - N. Egami AU - K. Fujiwara AU - H.T. Grahn TI - Photocurrent self-oscillations in undoped GaAs/AlAs superlattices modulated by an external ac voltage JF - Solid-State Electronics JA - Solid-State Electron. J1 - SSE VL - 42 SP - 1509 PY - 1998/01/01

Carrier density dependence of transitions between chaotic and periodic photocurrent oscillations in undoped GaAs/AlAs superlattices

@article{ author = { N. Ohtani and N. Egami and K. Fujiwara and H.T. Grahn and K. H. Ploog }, title = { Carrier density dependence of transitions between chaotic and periodic photocurrent oscillations in undoped GaAs/AlAs superlattices }, journal = { Physica B: Condensed Matter }, volume = { 249--251 }, year = { 1998 }, pages = { 878 } }

TY - JOUR AU - N. Ohtani AU - N. Egami AU - K. Fujiwara AU - H.T. Grahn AU - K. H. Ploog TI - Carrier density dependence of transitions between chaotic and periodic photocurrent oscillations in undoped GaAs/AlAs superlattices JF - Physica B: Condensed Matter JA - Physica B J1 - PhB VL - 249--251 SP - 878 PY - 1998/01/01

The transition between static and dynamic electric-field domain formation in weakly-coupled GaAs/AlAs superlattices

@article{ author = { N. Ohtani and N. Egami and H.T. Grahn and K. H. Ploog and L. L. Bonilla }, title = { The transition between static and dynamic electric-field domain formation in weakly-coupled GaAs/AlAs superlattices }, journal = { Physical Review B: Solid State }, volume = { 58 }, year = { 1998 }, pages = { R7528 } }

TY - JOUR AU - N. Ohtani AU - N. Egami AU - H.T. Grahn AU - K. H. Ploog AU - L. L. Bonilla TI - The transition between static and dynamic electric-field domain formation in weakly-coupled GaAs/AlAs superlattices JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 58 SP - R7528 PY - 1998/01/01

Controlled anisotropic ordering of Be doposited on the GaAs(001) surface

@article{ author = { H. Oigawa and M. Wassermeier and J. Behrend and L. Däweritz and K. H. Ploog }, title = { Controlled anisotropic ordering of Be doposited on the GaAs(001) surface }, journal = { Surface Science }, volume = { 399 }, year = { 1998 }, pages = { 39 } }

TY - JOUR AU - H. Oigawa AU - M. Wassermeier AU - J. Behrend AU - L. Däweritz AU - K. H. Ploog TI - Controlled anisotropic ordering of Be doposited on the GaAs(001) surface JF - Surface Science JA - Surf. Sci. J1 - SuSc VL - 399 SP - 39 PY - 1998/01/01

Time-resolved photoluminescence study of excitons in hexagonal GaN layers grown on sapphire

@article{ author = { S. Pau and Z. X. Liu and J. Kuhl and J. Ringling and H.T. Grahn and M. A. Khan and C. J. Sun and O. Ambacher and M. Stutzmann }, title = { Time-resolved photoluminescence study of excitons in hexagonal GaN layers grown on sapphire }, journal = { Physical Review B: Solid State }, volume = { 57 }, year = { 1998 }, pages = { 7066 } }

TY - JOUR AU - S. Pau AU - Z. X. Liu AU - J. Kuhl AU - J. Ringling AU - H.T. Grahn AU - M. A. Khan AU - C. J. Sun AU - O. Ambacher AU - M. Stutzmann TI - Time-resolved photoluminescence study of excitons in hexagonal GaN layers grown on sapphire JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 57 SP - 7066 PY - 1998/01/01

Doping of group III nitrides

@article{ author = { K. H. Ploog and O. Brandt }, title = { Doping of group III nitrides }, journal = { Journal of Vacuum Science and Technology A }, volume = { 16 }, year = { 1998 }, pages = { 1609 } }

TY - JOUR AU - K. H. Ploog AU - O. Brandt TI - Doping of group III nitrides JF - Journal of Vacuum Science and Technology A JA - J. Vac. Sci. Technol. A J1 - JVSTA VL - 16 SP - 1609 PY - 1998/01/01

Nucleation and growth of GaN layers on GaAs, Si, and SiC substrates

@article{ author = { K. H. Ploog and O. Brandt and H. Yang and B. Yang and A. Trampert }, title = { Nucleation and growth of GaN layers on GaAs, Si, and SiC substrates }, journal = { Journal of Vacuum Science and Technology B }, volume = { 16 }, year = { 1998 }, pages = { 2229 } }

TY - JOUR AU - K. H. Ploog AU - O. Brandt AU - H. Yang AU - B. Yang AU - A. Trampert TI - Nucleation and growth of GaN layers on GaAs, Si, and SiC substrates JF - Journal of Vacuum Science and Technology B JA - J. Vac. Sci. Technol. B J1 - JVSTB VL - 16 SP - 2229 PY - 1998/01/01

Growth of cubic GaN on GaAs(001) and Si(001) by plasma-assisted MBE

@article{ author = { K. H. Ploog and B. Yang and H. Yang and A. Trampert and O. Brandt }, title = { Growth of cubic GaN on GaAs(001) and Si(001) by plasma-assisted MBE }, journal = { Proceedings of the 9th International Workshop on the Physics of Semiconductor Devices; edited by V. Kumar and S. K. Agarwal (Narosa Publishing House, Dehli, 1998) }, volume = { }, year = { 1998 }, pages = { 271 } }

TY - JOUR AU - K. H. Ploog AU - B. Yang AU - H. Yang AU - A. Trampert AU - O. Brandt TI - Growth of cubic GaN on GaAs(001) and Si(001) by plasma-assisted MBE JF - Proceedings of the 9th International Workshop on the Physics of Semiconductor Devices; edited by V. Kumar and S. K. Agarwal (Narosa Publishing House, Dehli, 1998) JA - Proc. IWPSD 9 J1 - - VL - SP - 271 PY - 1998/01/01

Overdamped excitations of the free electron gas in GaN layers studied by Raman spectroscopy

@article{ author = { M. Ramsteiner and O. Brandt and K. H. Ploog }, title = { Overdamped excitations of the free electron gas in GaN layers studied by Raman spectroscopy }, journal = { Physical Review B: Solid State }, volume = { 58 }, year = { 1998 }, pages = { 1118 } }

TY - JOUR AU - M. Ramsteiner AU - O. Brandt AU - K. H. Ploog TI - Overdamped excitations of the free electron gas in GaN layers studied by Raman spectroscopy JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 58 SP - 1118 PY - 1998/01/01

Intrinsic point defects in GaN induced by ion implantation

@article{ author = { M. Ramsteiner and H. Kostial and Z. Xiao and K. H. Ploog and E. Nebauer and J. Würfl and H. Tews and H. Riechert }, title = { Intrinsic point defects in GaN induced by ion implantation }, journal = { Proceedings of the 2nd International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 1998); edited by K. Onabe, K. Hiramatsu, K. Itaya, and Y. Nakano (Ohmsha, Ltd., Tokyo, 1998) }, volume = { }, year = { 1998 }, pages = { 570 } }

TY - JOUR AU - M. Ramsteiner AU - H. Kostial AU - Z. Xiao AU - K. H. Ploog AU - E. Nebauer AU - J. Würfl AU - H. Tews AU - H. Riechert TI - Intrinsic point defects in GaN induced by ion implantation JF - Proceedings of the 2nd International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 1998); edited by K. Onabe, K. Hiramatsu, K. Itaya, and Y. Nakano (Ohmsha, Ltd., Tokyo, 1998) JA - Proc. ISBLLED 1998 J1 - - VL - SP - 570 PY - 1998/01/01

Direct comparison of the pressure-induced band-gap shifts in cubic and hexagonal GaN

@article{ author = { K. Reimann and M. Steube and O. Brandt and H. Yang and K. H. Ploog }, title = { Direct comparison of the pressure-induced band-gap shifts in cubic and hexagonal GaN }, journal = { Journal of Applied Physics }, volume = { 84 }, year = { 1998 }, pages = { 2971 } }

TY - JOUR AU - K. Reimann AU - M. Steube AU - O. Brandt AU - H. Yang AU - K. H. Ploog TI - Direct comparison of the pressure-induced band-gap shifts in cubic and hexagonal GaN JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 84 SP - 2971 PY - 1998/01/01

Exciton transport into a single GaAs quantum wire studied by picosecond near-field optical spectroscopy

@article{ author = { A. Richter and M. Süptitz and D. Heinrich and C. Lienau and T. Elsaesser and M. Ramsteiner and R. Nötzel and K. H. Ploog }, title = { Exciton transport into a single GaAs quantum wire studied by picosecond near-field optical spectroscopy }, journal = { Applied Physics Letters }, volume = { 73 }, year = { 1998 }, pages = { 2176 } }

TY - JOUR AU - A. Richter AU - M. Süptitz AU - D. Heinrich AU - C. Lienau AU - T. Elsaesser AU - M. Ramsteiner AU - R. Nötzel AU - K. H. Ploog TI - Exciton transport into a single GaAs quantum wire studied by picosecond near-field optical spectroscopy JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 73 SP - 2176 PY - 1998/01/01

Carrier trapping into single GaAs quantum wires studied by variable temperature near-field spectroscopy

@article{ author = { A. Richter and M. Süptitz and C. Lienau and T. Elsaesser and M. Ramsteiner and R. Nötzel and K. H. Ploog }, title = { Carrier trapping into single GaAs quantum wires studied by variable temperature near-field spectroscopy }, journal = { Ultramicroscopy }, volume = { 71 }, year = { 1998 }, pages = { 205 } }

TY - JOUR AU - A. Richter AU - M. Süptitz AU - C. Lienau AU - T. Elsaesser AU - M. Ramsteiner AU - R. Nötzel AU - K. H. Ploog TI - Carrier trapping into single GaAs quantum wires studied by variable temperature near-field spectroscopy JF - Ultramicroscopy JA - Ultramicroscopy J1 - UlMi VL - 71 SP - 205 PY - 1998/01/01

Direct evidence of the indirect energy gap in InAlAs/AlAsSb multiple quantum wells by time-resolved photoluminescence

@article{ author = { J. Ringling and Y. Kawamura and L. Schrottke and H.T. Grahn and K. Yoshimatsu and A. Kamada and N. Inoue }, title = { Direct evidence of the indirect energy gap in InAlAs/AlAsSb multiple quantum wells by time-resolved photoluminescence }, journal = { Applied Physics Letters }, volume = { 72 }, year = { 1998 }, pages = { 1620 } }

TY - JOUR AU - J. Ringling AU - Y. Kawamura AU - L. Schrottke AU - H.T. Grahn AU - K. Yoshimatsu AU - A. Kamada AU - N. Inoue TI - Direct evidence of the indirect energy gap in InAlAs/AlAsSb multiple quantum wells by time-resolved photoluminescence JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 72 SP - 1620 PY - 1998/01/01

Piezo-optics of InP in the visible-ultraviolet range

@article{ author = { D. Rönnow and P. Santos and M. Cardona and E. Anastassakis and M. Kuball }, title = { Piezo-optics of InP in the visible-ultraviolet range }, journal = { Physical Review B: Solid State }, volume = { 57 }, year = { 1998 }, pages = { 4432 } }

TY - JOUR AU - D. Rönnow AU - P. Santos AU - M. Cardona AU - E. Anastassakis AU - M. Kuball TI - Piezo-optics of InP in the visible-ultraviolet range JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 57 SP - 4432 PY - 1998/01/01

Crystal morphology and optical emissions of GaN layers grown on Si(111) substrates by molecular beam epitaxy

@article{ author = { M. A. Sánchez-García and F. J. Sanchez and F. B. Naranjo and F. Calle and E. Calleja and E. Munoz and U. Jahn and K. H. Ploog }, title = { Crystal morphology and optical emissions of GaN layers grown on Si(111) substrates by molecular beam epitaxy }, journal = { MRS Internet Journal of Nitride Semiconductor Research }, volume = { 3 }, year = { 1998 }, pages = { 32 } }

TY - JOUR AU - M. A. Sánchez-García AU - F. J. Sanchez AU - F. B. Naranjo AU - F. Calle AU - E. Calleja AU - E. Munoz AU - U. Jahn AU - K. H. Ploog TI - Crystal morphology and optical emissions of GaN layers grown on Si(111) substrates by molecular beam epitaxy JF - MRS Internet Journal of Nitride Semiconductor Research JA - MRS Internet J. Nitride Semicond. Res. J1 - MRSIJNSR VL - 3 SP - 32 PY - 1998/01/01

Spatially-resolved photoluminescence in GaAs surface acoustic wave structures

@article{ author = { P. V. Santos and M. Ramsteiner and F. Jungnickel }, title = { Spatially-resolved photoluminescence in GaAs surface acoustic wave structures }, journal = { Applied Physics Letters }, volume = { 72 }, year = { 1998 }, pages = { 2099 } }

TY - JOUR AU - P. V. Santos AU - M. Ramsteiner AU - F. Jungnickel TI - Spatially-resolved photoluminescence in GaAs surface acoustic wave structures JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 72 SP - 2099 PY - 1998/01/01

Raman spectroscopy of resonance exciton tunneling in GaAs/AlAs superlattices in electric fields

@article{ author = { V. F. Sapega and T. Ruf and M. Cardona and H.T. Grahn and K. Ploog }, title = { Raman spectroscopy of resonance exciton tunneling in GaAs/AlAs superlattices in electric fields }, journal = { Fizika Tverdogo Tela (Physics of the Solid State) }, volume = { 40 (40) }, year = { 1998 }, pages = { 827 (761) } }

TY - JOUR AU - V. F. Sapega AU - T. Ruf AU - M. Cardona AU - H.T. Grahn AU - K. Ploog TI - Raman spectroscopy of resonance exciton tunneling in GaAs/AlAs superlattices in electric fields JF - Fizika Tverdogo Tela (Physics of the Solid State) JA - Fiz. Tverd. Tela (St. Petersburg) [Phys. Solid State] J1 - PSS VL - 40 (40) SP - 827 (761) PY - 1998/01/01

Possible determination of critical exponents from experimental magnetization data of ferromagnetic thin films

@article{ author = { P. Schilbe and K. H. Rieder }, title = { Possible determination of critical exponents from experimental magnetization data of ferromagnetic thin films }, journal = { Europhysics Letters }, volume = { 41 }, year = { 1998 }, pages = { 219 } }

TY - JOUR AU - P. Schilbe AU - K. H. Rieder TI - Possible determination of critical exponents from experimental magnetization data of ferromagnetic thin films JF - Europhysics Letters JA - Europhys. Lett. J1 - EPL VL - 41 SP - 219 PY - 1998/01/01

Uniform multiatomic step arrays formed by atomic hydrogen assisted molecular beam epitaxy on GaAs (331) substrates

@article{ author = { H.-P. Schönherr and J. Fricke and Z. C. Niu and K. J. Friedland and R. Nötzel and K. H. Ploog }, title = { Uniform multiatomic step arrays formed by atomic hydrogen assisted molecular beam epitaxy on GaAs (331) substrates }, journal = { Applied Physics Letters }, volume = { 72 }, year = { 1998 }, pages = { 566 } }

TY - JOUR AU - H.-P. Schönherr AU - J. Fricke AU - Z. C. Niu AU - K. J. Friedland AU - R. Nötzel AU - K. H. Ploog TI - Uniform multiatomic step arrays formed by atomic hydrogen assisted molecular beam epitaxy on GaAs (331) substrates JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 72 SP - 566 PY - 1998/01/01

Vertical transport of photo-excited carriers for excitonic recombinations in modulation doped GaAs/GaAlAs heterojunctions

@article{ author = { J. X. Shen and Y. Oka and G. Landwehr and K.-J. Friedland and R. Hey and K. Ploog and G. Weimann }, title = { Vertical transport of photo-excited carriers for excitonic recombinations in modulation doped GaAs/GaAlAs heterojunctions }, journal = { Solid State Communications }, volume = { 106 }, year = { 1998 }, pages = { 495 } }

TY - JOUR AU - J. X. Shen AU - Y. Oka AU - G. Landwehr AU - K.-J. Friedland AU - R. Hey AU - K. Ploog AU - G. Weimann TI - Vertical transport of photo-excited carriers for excitonic recombinations in modulation doped GaAs/GaAlAs heterojunctions JF - Solid State Communications JA - Solid State Commun. J1 - SSC VL - 106 SP - 495 PY - 1998/01/01

Transport properties in semiconductor-superconductor junctions in quantizing magnetic fields

@article{ author = { Y. Takagaki }, title = { Transport properties in semiconductor-superconductor junctions in quantizing magnetic fields }, journal = { Physical Review B: Solid State }, volume = { 57 }, year = { 1998 }, pages = { 4009 } }

TY - JOUR AU - Y. Takagaki TI - Transport properties in semiconductor-superconductor junctions in quantizing magnetic fields JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 57 SP - 4009 PY - 1998/01/01

Negative bend resistance in narrow cross junctions near ν = 1

@article{ author = { Y. Takagaki and K.-J. Friedland and D. K. Maude and R. Hey and S. Tarucha and K. H. Ploog and J. C. Portal }, title = { Negative bend resistance in narrow cross junctions near <span class="math"><em>ν</em></span> = 1 }, journal = { Solid State Communications }, volume = { 106 }, year = { 1998 }, pages = { 627 } }

TY - JOUR AU - Y. Takagaki AU - K.-J. Friedland AU - D. K. Maude AU - R. Hey AU - S. Tarucha AU - K. H. Ploog AU - J. C. Portal TI - Negative bend resistance in narrow cross junctions near <span class="math"><em>ν</em></span> = 1 JF - Solid State Communications JA - Solid State Commun. J1 - SSC VL - 106 SP - 627 PY - 1998/01/01

Metastability of the quantum Hall states in asymmetric two-layer systems

@article{ author = { Y. Takagaki and K. J. Friedland and K. H. Ploog and K. Muraki }, title = { Metastability of the quantum Hall states in asymmetric two-layer systems }, journal = { Journal of Physics: Condensed Matter }, volume = { 10 }, year = { 1998 }, pages = { 8305 } }

TY - JOUR AU - Y. Takagaki AU - K. J. Friedland AU - K. H. Ploog AU - K. Muraki TI - Metastability of the quantum Hall states in asymmetric two-layer systems JF - Journal of Physics: Condensed Matter JA - J. Phys.: Condens. Matter J1 - JPCM VL - 10 SP - 8305 PY - 1998/01/01

Quantum Hall effect in asymmetric double quantum well systems

@article{ author = { Y. Takagaki and K. Muraki and S. Tarucha }, title = { Quantum Hall effect in asymmetric double quantum well systems }, journal = { Semiconductor Science and Technology }, volume = { 13 }, year = { 1998 }, pages = { 296 } }

TY - JOUR AU - Y. Takagaki AU - K. Muraki AU - S. Tarucha TI - Quantum Hall effect in asymmetric double quantum well systems JF - Semiconductor Science and Technology JA - Semicond. Sci. Technol. J1 - SST VL - 13 SP - 296 PY - 1998/01/01

Conductance fluctuations of semiconductor-superconductor microjunctions in the quantum Hall regime

@article{ author = { Y. Takagaki and K. H. Ploog }, title = { Conductance fluctuations of semiconductor-superconductor microjunctions in the quantum Hall regime }, journal = { Physical Review B: Solid State }, volume = { 58 }, year = { 1998 }, pages = { 7162 } }

TY - JOUR AU - Y. Takagaki AU - K. H. Ploog TI - Conductance fluctuations of semiconductor-superconductor microjunctions in the quantum Hall regime JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 58 SP - 7162 PY - 1998/01/01

Geometry-specific conductance fluctuations in semiconductor-superconductor microjunctions

@article{ author = { Y. Takagaki and K. H. Ploog }, title = { Geometry-specific conductance fluctuations in semiconductor-superconductor microjunctions }, journal = { Physical Review B: Solid State }, volume = { 57 }, year = { 1998 }, pages = { R12689 } }

TY - JOUR AU - Y. Takagaki AU - K. H. Ploog TI - Geometry-specific conductance fluctuations in semiconductor-superconductor microjunctions JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 57 SP - R12689 PY - 1998/01/01

Influence of the lead on the transmission resonance in semiconductor-superconductor microjunctions

@article{ author = { Y. Takagaki and K. H. Ploog }, title = { Influence of the lead on the transmission resonance in semiconductor-superconductor microjunctions }, journal = { Solid State Communications }, volume = { 108 }, year = { 1998 }, pages = { 733 } }

TY - JOUR AU - Y. Takagaki AU - K. H. Ploog TI - Influence of the lead on the transmission resonance in semiconductor-superconductor microjunctions JF - Solid State Communications JA - Solid State Commun. J1 - SSC VL - 108 SP - 733 PY - 1998/01/01

Quantum transmission in narrow ballistic wires containing a superconductor island

@article{ author = { Y. Takagaki and K. H. Ploog }, title = { Quantum transmission in narrow ballistic wires containing a superconductor island }, journal = { Applied Physics Letters }, volume = { 73 }, year = { 1998 }, pages = { 205 } }

TY - JOUR AU - Y. Takagaki AU - K. H. Ploog TI - Quantum transmission in narrow ballistic wires containing a superconductor island JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 73 SP - 205 PY - 1998/01/01

Crystal structure of group III nitrides

@article{ author = { A. Trampert and O. Brandt and K. H. Ploog }, title = { Crystal structure of group III nitrides }, journal = { Gallium Nitride (GaN) I; edited by J. I. Pankove and T. D. Moustakas, Semiconductors and Semimetals Vol. 50 (Academic Press, San Diego, 1998) }, volume = { }, year = { 1998 }, pages = { 167 } }

TY - JOUR AU - A. Trampert AU - O. Brandt AU - K. H. Ploog TI - Crystal structure of group III nitrides JF - Gallium Nitride (GaN) I; edited by J. I. Pankove and T. D. Moustakas, Semiconductors and Semimetals Vol. 50 (Academic Press, San Diego, 1998) JA - SaS 50 J1 - - VL - SP - 167 PY - 1998/01/01

Anisotropic misfit dislocation nucleation in two-dimensional grown InAs/GaAs(001) heterostructures

@article{ author = { A. Trampert and K. H. Ploog and E. Tournie }, title = { Anisotropic misfit dislocation nucleation in two-dimensional grown InAs/GaAs(001) heterostructures }, journal = { Applied Physics Letters }, volume = { 73 }, year = { 1998 }, pages = { 1074 } }

TY - JOUR AU - A. Trampert AU - K. H. Ploog AU - E. Tournie TI - Anisotropic misfit dislocation nucleation in two-dimensional grown InAs/GaAs(001) heterostructures JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 73 SP - 1074 PY - 1998/01/01

Anisotropic strain relaxation and growth mode dependence in highly lattice mismatched III-V systems

@article{ author = { A. Trampert and E. Tournie and K. H. Ploog }, title = { Anisotropic strain relaxation and growth mode dependence in highly lattice mismatched III-V systems }, journal = { Proceedings of the 7th International Conference on Defect Recognition and Image Processing in Semiconductors (DRIP VII); edited by J. Donecker and I. Rechenberg, Inst. Phys. Conf. Ser. }, volume = { 160 }, year = { 1998 }, pages = { 389 } }

TY - JOUR AU - A. Trampert AU - E. Tournie AU - K. H. Ploog TI - Anisotropic strain relaxation and growth mode dependence in highly lattice mismatched III-V systems JF - Proceedings of the 7th International Conference on Defect Recognition and Image Processing in Semiconductors (DRIP VII); edited by J. Donecker and I. Rechenberg, Inst. Phys. Conf. Ser. JA - Proc. ICDRIPS 7 J1 - - VL - 160 SP - 389 PY - 1998/01/01

Local-vibrational-mode absorption of two O-H centres in GaP

@article{ author = { W. Ulrici and M. Czupalla and M. Seifert }, title = { Local-vibrational-mode absorption of two O-H centres in GaP }, journal = { Physica Status Solidi B }, volume = { 210 }, year = { 1998 }, pages = { 551 } }

TY - JOUR AU - W. Ulrici AU - M. Czupalla AU - M. Seifert TI - Local-vibrational-mode absorption of two O-H centres in GaP JF - Physica Status Solidi B JA - Phys. Status Solidi B J1 - PSSB VL - 210 SP - 551 PY - 1998/01/01

Optical absorption and electron paramagnetic resonance of V⁴⁺ in GaP

@article{ author = { W. Ulrici and K. Friedland and J. Kreissl and A. Erramli and N. Tebbal and A.-M. Vasson and A. Vasson }, title = { Optical absorption and electron paramagnetic resonance of V⁴⁺ in GaP }, journal = { Journal of Physics: Condensed Matter }, volume = { 10 }, year = { 1998 }, pages = { 7619 } }

TY - JOUR AU - W. Ulrici AU - K. Friedland AU - J. Kreissl AU - A. Erramli AU - N. Tebbal AU - A.-M. Vasson AU - A. Vasson TI - Optical absorption and electron paramagnetic resonance of V⁴⁺ in GaP JF - Journal of Physics: Condensed Matter JA - J. Phys.: Condens. Matter J1 - JPCM VL - 10 SP - 7619 PY - 1998/01/01

Stress and relief of misfit strain of Ge/Si(111)

@article{ author = { J. Walz and A. Greuer and G. Wedler and T. Hesjedal and E. Chilla and R. Koch }, title = { Stress and relief of misfit strain of Ge/Si(111) }, journal = { Applied Physics Letters }, volume = { 73 }, year = { 1998 }, pages = { 2579 } }

TY - JOUR AU - J. Walz AU - A. Greuer AU - G. Wedler AU - T. Hesjedal AU - E. Chilla AU - R. Koch TI - Stress and relief of misfit strain of Ge/Si(111) JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 73 SP - 2579 PY - 1998/01/01

Submonolayer Si deposition at low temperatures on the GaAs(001)-(2x4) surface studied by scanning tunneling microscopy

@article{ author = { M. Wassermeier and S. Kellermann and J. Behrend and L. Däweritz and K. H. Ploog }, title = { Submonolayer Si deposition at low temperatures on the GaAs(001)-(2x4) surface studied by scanning tunneling microscopy }, journal = { Surface Science }, volume = { 414 }, year = { 1998 }, pages = { 298 } }

TY - JOUR AU - M. Wassermeier AU - S. Kellermann AU - J. Behrend AU - L. Däweritz AU - K. H. Ploog TI - Submonolayer Si deposition at low temperatures on the GaAs(001)-(2x4) surface studied by scanning tunneling microscopy JF - Surface Science JA - Surf. Sci. J1 - SuSc VL - 414 SP - 298 PY - 1998/01/01

Ga-terminated β-GaN(001) surface reconstructions studied by scanning tunneling microscopy

@article{ author = { M. Wassermeier and H. Yang and O. Brandt and A. Yamada and J. Behrend and K. H. Ploog }, title = { Ga-terminated <span class="math"><em>β</em></span>-GaN(001) surface reconstructions studied by scanning tunneling microscopy }, journal = { Applied Surface Science }, volume = { 123 }, year = { 1998 }, pages = { 181 } }

TY - JOUR AU - M. Wassermeier AU - H. Yang AU - O. Brandt AU - A. Yamada AU - J. Behrend AU - K. H. Ploog TI - Ga-terminated <span class="math"><em>β</em></span>-GaN(001) surface reconstructions studied by scanning tunneling microscopy JF - Applied Surface Science JA - Appl. Surf. Sci. J1 - ASS VL - 123 SP - 181 PY - 1998/01/01

Intrinsic stress upon Stranski-Krastanov growth of Ge on Si(001)

@article{ author = { G. Wedler and J. Walz and T. Hesjedal and E. Chilla and R. Koch }, title = { Intrinsic stress upon Stranski-Krastanov growth of Ge on Si(001) }, journal = { Surface Science }, volume = { 404 }, year = { 1998 }, pages = { 290 } }

TY - JOUR AU - G. Wedler AU - J. Walz AU - T. Hesjedal AU - E. Chilla AU - R. Koch TI - Intrinsic stress upon Stranski-Krastanov growth of Ge on Si(001) JF - Surface Science JA - Surf. Sci. J1 - SuSc VL - 404 SP - 290 PY - 1998/01/01

Stress and relief of misfit strain of Ge/Si(001)

@article{ author = { G. Wedler and J. Walz and T. Hesjedal and E. Chilla and R. Koch }, title = { Stress and relief of misfit strain of Ge/Si(001) }, journal = { Physical Review Letters }, volume = { 80 }, year = { 1998 }, pages = { 2382 } }

TY - JOUR AU - G. Wedler AU - J. Walz AU - T. Hesjedal AU - E. Chilla AU - R. Koch TI - Stress and relief of misfit strain of Ge/Si(001) JF - Physical Review Letters JA - Phys. Rev. Lett. J1 - PRL VL - 80 SP - 2382 PY - 1998/01/01

Spectroscopic ellipsometry measurements of Al_xGa_1-xN in the energy range 3–25 eV

@article{ author = { T. Wethkamp and K. Wilmers and N. Esser and W. Richter and O. Ambacher and H. Angerer and G. Jungk and R. L. Johnson and M. Cardona }, title = { Spectroscopic ellipsometry measurements of Al_xGa_1-xN in the energy range 3–25 eV }, journal = { Thin Solid Films }, volume = { 313 }, year = { 1998 }, pages = { 745 } }

TY - JOUR AU - T. Wethkamp AU - K. Wilmers AU - N. Esser AU - W. Richter AU - O. Ambacher AU - H. Angerer AU - G. Jungk AU - R. L. Johnson AU - M. Cardona TI - Spectroscopic ellipsometry measurements of Al_xGa_1-xN in the energy range 3–25 eV JF - Thin Solid Films JA - Thin Solid Films J1 - TSF VL - 313 SP - 745 PY - 1998/01/01

Growth of cubic GaN on Si(001) by plasma-assisted MBE

@article{ author = { B. Yang and O. Brandt and A. Trampert and B. Jenichen and K. H. Ploog }, title = { Growth of cubic GaN on Si(001) by plasma-assisted MBE }, journal = { Applied Surface Science }, volume = { 123 }, year = { 1998 }, pages = { 1 } }

TY - JOUR AU - B. Yang AU - O. Brandt AU - A. Trampert AU - B. Jenichen AU - K. H. Ploog TI - Growth of cubic GaN on Si(001) by plasma-assisted MBE JF - Applied Surface Science JA - Appl. Surf. Sci. J1 - ASS VL - 123 SP - 1 PY - 1998/01/01

Structural and optical properties of GaN layers directly grown on 6H-SiC(0001) by plasma-assisted molecular beam epitaxy

@article{ author = { B. Yang and O. Brandt and Y. G. Zhang and A. Z. Li and B. Jenichen and G. Paris and K. H. Ploog }, title = { Structural and optical properties of GaN layers directly grown on 6H-SiC(0001) by plasma-assisted molecular beam epitaxy }, journal = { Materials Science Forum }, volume = { 264--268 }, year = { 1998 }, pages = { 1235 } }

TY - JOUR AU - B. Yang AU - O. Brandt AU - Y. G. Zhang AU - A. Z. Li AU - B. Jenichen AU - G. Paris AU - K. H. Ploog TI - Structural and optical properties of GaN layers directly grown on 6H-SiC(0001) by plasma-assisted molecular beam epitaxy JF - Materials Science Forum JA - Mater. Sci. Forum J1 - MSF VL - 264--268 SP - 1235 PY - 1998/01/01

Growth and mosaic model of GaN grown directly on 6H-SiC(0001) by direct current plasma assisted molecular beam epitaxy

@article{ author = { Q. K. Yang and A. Z. Li and Y. G. Zhan and B. Yang and O. Brandt and K. H. Ploog }, title = { Growth and mosaic model of GaN grown directly on 6H-SiC(0001) by direct current plasma assisted molecular beam epitaxy }, journal = { Journal of Crystal Growth }, volume = { 192 }, year = { 1998 }, pages = { 28 } }

TY - JOUR AU - Q. K. Yang AU - A. Z. Li AU - Y. G. Zhan AU - B. Yang AU - O. Brandt AU - K. H. Ploog TI - Growth and mosaic model of GaN grown directly on 6H-SiC(0001) by direct current plasma assisted molecular beam epitaxy JF - Journal of Crystal Growth JA - J. Cryst. Growth J1 - JGC VL - 192 SP - 28 PY - 1998/01/01

Structural properties of GaN layers on Si(001) grown by plasma-assisted molecular beam epitaxy

@article{ author = { B. Yang and A. Trampert and O. Brandt and B. Jenichen and K. H. Ploog }, title = { Structural properties of GaN layers on Si(001) grown by plasma-assisted molecular beam epitaxy }, journal = { Journal of Applied Physics }, volume = { 83 }, year = { 1998 }, pages = { 3800 } }

TY - JOUR AU - B. Yang AU - A. Trampert AU - O. Brandt AU - B. Jenichen AU - K. H. Ploog TI - Structural properties of GaN layers on Si(001) grown by plasma-assisted molecular beam epitaxy JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 83 SP - 3800 PY - 1998/01/01

Structural characterization of thin GaN epilayers directly grown on on-axis 6H-SiC(0001) by plasma-assisted molecular beam epitaxy

@article{ author = { B. Yang and A. Trampert and B. Jenichen and O. Brandt and K. H. Ploog }, title = { Structural characterization of thin GaN epilayers directly grown on on-axis 6H-SiC(0001) by plasma-assisted molecular beam epitaxy }, journal = { Applied Physics Letters }, volume = { 73 }, year = { 1998 }, pages = { 3869 } }

TY - JOUR AU - B. Yang AU - A. Trampert AU - B. Jenichen AU - O. Brandt AU - K. H. Ploog TI - Structural characterization of thin GaN epilayers directly grown on on-axis 6H-SiC(0001) by plasma-assisted molecular beam epitaxy JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 73 SP - 3869 PY - 1998/01/01

Optical phonons in isotopic Ge studied by Raman scattering

@article{ author = { J. M. Zhang and M. Giehler and A. Göbel and T. Ruf and M. Cardona and E. E. Haller and K. Itoh }, title = { Optical phonons in isotopic Ge studied by Raman scattering }, journal = { Physical Review B: Solid State }, volume = { 57 }, year = { 1998 }, pages = { 1348 } }

TY - JOUR AU - J. M. Zhang AU - M. Giehler AU - A. Göbel AU - T. Ruf AU - M. Cardona AU - E. E. Haller AU - K. Itoh TI - Optical phonons in isotopic Ge studied by Raman scattering JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 57 SP - 1348 PY - 1998/01/01

Magnetic-field dependence of the electron-LO-phonon interaction in a 2D electron gas

@article{ author = { C. Hartmann and G. Martinez and C. A. Fisher and D. W. Braun and K. Ploog }, title = { Magnetic-field dependence of the electron-LO-phonon interaction in a 2D electron gas }, journal = { Europhysics Letters }, volume = { 41 }, year = { 1998 }, pages = { 559 } }

TY - JOUR AU - C. Hartmann AU - G. Martinez AU - C. A. Fisher AU - D. W. Braun AU - K. Ploog TI - Magnetic-field dependence of the electron-LO-phonon interaction in a 2D electron gas JF - Europhysics Letters JA - Europhys. Lett. J1 - EPL VL - 41 SP - 559 PY - 1998/01/01