Coexistence of quantum-confined Stark effect and localized states in an (In,Ga)N/GaN nanowire heterostructure

@article{ author = { J. Lähnemann and O. Brandt and C. Pfüller and T. Flissikowski and U. Jahn and E. Luna and M. Hanke and M. Knelangen and A. Trampert and H.T. Grahn }, title = { Coexistence of quantum-confined Stark effect and localized states in an (In,Ga)N/GaN nanowire heterostructure }, journal = { Physical Review B: Solid State }, volume = { 84 }, year = { 2011 }, pages = { 155303 } }

TY - JOUR AU - J. Lähnemann AU - O. Brandt AU - C. Pfüller AU - T. Flissikowski AU - U. Jahn AU - E. Luna AU - M. Hanke AU - M. Knelangen AU - A. Trampert AU - H.T. Grahn TI - Coexistence of quantum-confined Stark effect and localized states in an (In,Ga)N/GaN nanowire heterostructure JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 84 SP - 155303 PY - 2011/10/11

Surface acoustic Bloch oscillations and multiple resonant Landau-Zener tunneling in a solid

@article{ author = { Yu. A. Kosevich and M. M. de Lima Jr. and P. V. Santos and A. Cantarero }, title = { Surface acoustic Bloch oscillations and multiple resonant Landau-Zener tunneling in a solid }, journal = { Chinese Journal of Physics }, volume = { 49 }, year = { 2011 }, pages = { 514 } }

TY - JOUR AU - Yu. A. Kosevich AU - M. M. de Lima Jr. AU - P. V. Santos AU - A. Cantarero TI - Surface acoustic Bloch oscillations and multiple resonant Landau-Zener tunneling in a solid JF - Chinese Journal of Physics JA - Chin. J. Phys. J1 - VL - 49 SP - 514 PY - 2011/01/01

Effects of the piezoelectric field in the modulation of exciton-polaritons by surface acoustic waves

@article{ author = { E. A. Cerda-Méndez and D. Krizhanovskii and K. Biermann and R. Hey and P. V. Santos and M. S. Skolnick }, title = { Effects of the piezoelectric field in the modulation of exciton-polaritons by surface acoustic waves }, journal = { Superlattices and Microstructures }, volume = { 49 }, year = { 2011 }, pages = { 233 } }

TY - JOUR AU - E. A. Cerda-Méndez AU - D. Krizhanovskii AU - K. Biermann AU - R. Hey AU - P. V. Santos AU - M. S. Skolnick TI - Effects of the piezoelectric field in the modulation of exciton-polaritons by surface acoustic waves JF - Superlattices and Microstructures JA - Superlattices Microstruct. J1 - SuMi VL - 49 SP - 233 PY - 2011/01/01

Acoustic carrier transport in InP-based structures

@article{ author = { M. Beck and G. Yang and P. V. Santos and R. Nötzel }, title = { Acoustic carrier transport in InP-based structures }, journal = { Chinese Journal of Physics }, volume = { 49 }, year = { 2011 }, pages = { 520 } }

TY - JOUR AU - M. Beck AU - G. Yang AU - P. V. Santos AU - R. Nötzel TI - Acoustic carrier transport in InP-based structures JF - Chinese Journal of Physics JA - Chin. J. Phys. J1 - VL - 49 SP - 520 PY - 2011/01/01

Disorder-induced reversal of spin polarization in the Heusler alloy Co₂FeSi

@article{ author = { P. Bruski and S. C. Erwin and M. Ramsteiner and O. Brandt and K.-J. Friedland and R. Farshchi and J. Herfort and H. Riechert }, title = { Disorder-induced reversal of spin polarization in the Heusler alloy Co₂FeSi }, journal = { Physical Review B: Solid State }, volume = { 83 }, year = { 2011 }, pages = { 140409(R) } }

TY - JOUR AU - P. Bruski AU - S. C. Erwin AU - M. Ramsteiner AU - O. Brandt AU - K.-J. Friedland AU - R. Farshchi AU - J. Herfort AU - H. Riechert TI - Disorder-induced reversal of spin polarization in the Heusler alloy Co₂FeSi JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 83 SP - 140409(R) PY - 2011/01/01

Polariton condensation in one- and two-dimensional acoustic lattices

@article{ author = { E. A. Cerda-Méndez and D. N. Krizhanovskii and K. Biermann and M. Wouters and R. Hey and P. V. Santos and M. S. Skolnick }, title = { Polariton condensation in one- and two-dimensional acoustic lattices }, journal = { Proceedings of the 30th International Conference on the Physics of Semiconductors; }, volume = { 1399 }, year = { 2011 }, pages = { 1031 } }

TY - JOUR AU - E. A. Cerda-Méndez AU - D. N. Krizhanovskii AU - K. Biermann AU - M. Wouters AU - R. Hey AU - P. V. Santos AU - M. S. Skolnick TI - Polariton condensation in one- and two-dimensional acoustic lattices JF - Proceedings of the 30th International Conference on the Physics of Semiconductors; JA - AIP Conf. Proc. J1 - VL - 1399 SP - 1031 PY - 2011/01/01

Swingback in magnetization reversal in MnAs-GaAs coaxial nanowire heterostructures

@article{ author = { Y. Takagaki and J. Herfort and M. Hilse and L. Geelhaar and H. Riechert }, title = { Swingback in magnetization reversal in MnAs-GaAs coaxial nanowire heterostructures }, journal = { Journal of Physics: Condensed Matter }, volume = { 23 }, year = { 2011 }, pages = { 126002 } }

TY - JOUR AU - Y. Takagaki AU - J. Herfort AU - M. Hilse AU - L. Geelhaar AU - H. Riechert TI - Swingback in magnetization reversal in MnAs-GaAs coaxial nanowire heterostructures JF - Journal of Physics: Condensed Matter JA - J. Phys.: Condens. Matter J1 - JPCM VL - 23 SP - 126002 PY - 2011/01/01

Strain in GaAs-MnAs core-shell nanowires grown by molecular beam epitaxy

@article{ author = { M. Hilse and Y. Takagaki and M. Ramsteiner and J. Herfort and S. Breuer and L. Geelhaar and H. Riechert }, title = { Strain in GaAs-MnAs core-shell nanowires grown by molecular beam epitaxy }, journal = { Journal of Crystal Growth }, volume = { 323 }, year = { 2011 }, pages = { 307 } }

TY - JOUR AU - M. Hilse AU - Y. Takagaki AU - M. Ramsteiner AU - J. Herfort AU - S. Breuer AU - L. Geelhaar AU - H. Riechert TI - Strain in GaAs-MnAs core-shell nanowires grown by molecular beam epitaxy JF - Journal of Crystal Growth JA - J. Cryst. Growth J1 - JGC VL - 323 SP - 307 PY - 2011/01/01

Nucleation and growth of Au-assisted GaAs nanowires on GaAs(111)B and Si(111) in comparison

@article{ author = { S. Breuer and M. Hilse and L. Geelhaar and H. Riechert }, title = { Nucleation and growth of Au-assisted GaAs nanowires on GaAs(111)B and Si(111) in comparison }, journal = { Journal of Crystal Growth }, volume = { 323 }, year = { 2011 }, pages = { 311 } }

TY - JOUR AU - S. Breuer AU - M. Hilse AU - L. Geelhaar AU - H. Riechert TI - Nucleation and growth of Au-assisted GaAs nanowires on GaAs(111)B and Si(111) in comparison JF - Journal of Crystal Growth JA - J. Cryst. Growth J1 - JGC VL - 323 SP - 311 PY - 2011/01/01

Enhanced emission efficiency due to an excited subband resonance in a GaAs-based quantum-well system

@article{ author = { K. Fujiwara and U. Jahn and E. Luna and H.T. Grahn }, title = { Enhanced emission efficiency due to an excited subband resonance in a GaAs-based quantum-well system }, journal = { Journal of Crystal Growth }, volume = { 323 }, year = { 2011 }, pages = { 45 } }

TY - JOUR AU - K. Fujiwara AU - U. Jahn AU - E. Luna AU - H.T. Grahn TI - Enhanced emission efficiency due to an excited subband resonance in a GaAs-based quantum-well system JF - Journal of Crystal Growth JA - J. Cryst. Growth J1 - JGC VL - 323 SP - 45 PY - 2011/01/01

Interface engineering for improved growth of GaSb on Si(111)

@article{ author = { A. Proessdorf and F. Grosse and O. Romanyuk and W. Braun and B. Jenichen and A. Trampert and H. Riechert }, title = { Interface engineering for improved growth of GaSb on Si(111) }, journal = { Journal of Crystal Growth }, volume = { 323 }, year = { 2011 }, pages = { 401 } }

TY - JOUR AU - A. Proessdorf AU - F. Grosse AU - O. Romanyuk AU - W. Braun AU - B. Jenichen AU - A. Trampert AU - H. Riechert TI - Interface engineering for improved growth of GaSb on Si(111) JF - Journal of Crystal Growth JA - J. Cryst. Growth J1 - JGC VL - 323 SP - 401 PY - 2011/01/01

Epitaxial lateral overgrowth in the system Si/SiO_x/Si: The influence of residual oxygen at the interface

@article{ author = { M. Hanke and R. Köhler and P. Schäfer and D. Lübbert and I. Häusler and W. Neumann and P. Modregger and T. Boeck and T. Baumbach }, title = { Epitaxial lateral overgrowth in the system Si/SiO_x/Si: The influence of residual oxygen at the interface }, journal = { Physical Review B: Solid State }, volume = { 83 }, year = { 2011 }, pages = { 125312 } }

TY - JOUR AU - M. Hanke AU - R. Köhler AU - P. Schäfer AU - D. Lübbert AU - I. Häusler AU - W. Neumann AU - P. Modregger AU - T. Boeck AU - T. Baumbach TI - Epitaxial lateral overgrowth in the system Si/SiO_x/Si: The influence of residual oxygen at the interface JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 83 SP - 125312 PY - 2011/01/01

Crystallization of amorphous InAs/GaAs films on GaAs

@article{ author = { R. Hey and P. V. Santos and E. Luna and T. Flissikowski and U. Jahn }, title = { Crystallization of amorphous InAs/GaAs films on GaAs }, journal = { Journal of Crystal Growth }, volume = { 323 }, year = { 2011 }, pages = { 5 } }

TY - JOUR AU - R. Hey AU - P. V. Santos AU - E. Luna AU - T. Flissikowski AU - U. Jahn TI - Crystallization of amorphous InAs/GaAs films on GaAs JF - Journal of Crystal Growth JA - J. Cryst. Growth J1 - JGC VL - 323 SP - 5 PY - 2011/01/01

GaN nanowire templates for the pendeoepitaxial coalescence overgrowth on Si(111) by molecular beam epitaxy

@article{ author = { P. Dogan and O. Brandt and C. Pfüller and A.-K. Bluhm and L. Geelhaar and H. Riechert }, title = { GaN nanowire templates for the pendeoepitaxial coalescence overgrowth on Si(111) by molecular beam epitaxy }, journal = { Journal of Crystal Growth }, volume = { 323 }, year = { 2011 }, pages = { 418 } }

TY - JOUR AU - P. Dogan AU - O. Brandt AU - C. Pfüller AU - A.-K. Bluhm AU - L. Geelhaar AU - H. Riechert TI - GaN nanowire templates for the pendeoepitaxial coalescence overgrowth on Si(111) by molecular beam epitaxy JF - Journal of Crystal Growth JA - J. Cryst. Growth J1 - JGC VL - 323 SP - 418 PY - 2011/01/01

Effect of growth temperature on the structural, morphological and magnetic properties of Fe films on GaN(0001)

@article{ author = { C. Gao and O. Brandt and J. Lähnemann and J. Herfort and H.-P. Schönherr and U. Jahn and B. Jenichen }, title = { Effect of growth temperature on the structural, morphological and magnetic properties of Fe films on GaN(0001) }, journal = { Journal of Crystal Growth }, volume = { 323 }, year = { 2011 }, pages = { 359 } }

TY - JOUR AU - C. Gao AU - O. Brandt AU - J. Lähnemann AU - J. Herfort AU - H.-P. Schönherr AU - U. Jahn AU - B. Jenichen TI - Effect of growth temperature on the structural, morphological and magnetic properties of Fe films on GaN(0001) JF - Journal of Crystal Growth JA - J. Cryst. Growth J1 - JGC VL - 323 SP - 359 PY - 2011/01/01

Emission control of InGaN nanocolumns grown by molecular-beam epitaxy on Si(111) substrates

@article{ author = { S. Albert and A. Bengoechea-Encabo and P. Lefebvre and M. A. Sánchez-García and E. Calleja and U. Jahn and A. Trampert }, title = { Emission control of InGaN nanocolumns grown by molecular-beam epitaxy on Si(111) substrates }, journal = { Applied Physics Letters }, volume = { 99 }, year = { 2011 }, pages = { 131108 } }

TY - JOUR AU - S. Albert AU - A. Bengoechea-Encabo AU - P. Lefebvre AU - M. A. Sánchez-García AU - E. Calleja AU - U. Jahn AU - A. Trampert TI - Emission control of InGaN nanocolumns grown by molecular-beam epitaxy on Si(111) substrates JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 99 SP - 131108 PY - 2011/01/01

Controlled growth of exciton-polariton microcavities using in-situ spectral reflectivity measurements

@article{ author = { K. Biermann and E. A. Cerda-Méndez and M. Höricke and P. V. Santos and R. Hey }, title = { Controlled growth of exciton-polariton microcavities using in-situ spectral reflectivity measurements }, journal = { Journal of Crystal Growth }, volume = { 323 }, year = { 2011 }, pages = { 56 } }

TY - JOUR AU - K. Biermann AU - E. A. Cerda-Méndez AU - M. Höricke AU - P. V. Santos AU - R. Hey TI - Controlled growth of exciton-polariton microcavities using in-situ spectral reflectivity measurements JF - Journal of Crystal Growth JA - J. Cryst. Growth J1 - JGC VL - 323 SP - 56 PY - 2011/01/01

Direct observation by transmission electron microscopy of the influence of Ni catalyst-seeds on the growth of GaN-(Al,Ga)N axial heterostructure nanowires

@article{ author = { L. Lari and T. Walther and M. H. Gass and L. Geelhaar and C. Chèze and H. Riechert and T. J. Bullough and P. R. Chalker }, title = { Direct observation by transmission electron microscopy of the influence of Ni catalyst-seeds on the growth of GaN-(Al,Ga)N axial heterostructure nanowires }, journal = { Journal of Crystal Growth }, volume = { 327 }, year = { 2011 }, pages = { 27 } }

TY - JOUR AU - L. Lari AU - T. Walther AU - M. H. Gass AU - L. Geelhaar AU - C. Chèze AU - H. Riechert AU - T. J. Bullough AU - P. R. Chalker TI - Direct observation by transmission electron microscopy of the influence of Ni catalyst-seeds on the growth of GaN-(Al,Ga)N axial heterostructure nanowires JF - Journal of Crystal Growth JA - J. Cryst. Growth J1 - JGC VL - 327 SP - 27 PY - 2011/01/01

Nucleation mechanisms of self-induced GaN nanowires grown on an amorphous interlayer

@article{ author = { V. Consonni and M. Hanke and M. Knelangen and L. Geelhaar and A. Trampert and H. Riechert }, title = { Nucleation mechanisms of self-induced GaN nanowires grown on an amorphous interlayer }, journal = { Physical Review B: Solid State }, volume = { 83 }, year = { 2011 }, pages = { 035310 } }

TY - JOUR AU - V. Consonni AU - M. Hanke AU - M. Knelangen AU - L. Geelhaar AU - A. Trampert AU - H. Riechert TI - Nucleation mechanisms of self-induced GaN nanowires grown on an amorphous interlayer JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 83 SP - 035310 PY - 2011/01/01

Properties of GaN nanowires grown by molecular beam epitaxy

@article{ author = { L. Geelhaar and C. Chèze and B. Jenichen and O. Brandt and C. Pfüller and S. Münch and R. Rothemund and S. Reitzenstein and A. Forchel and Th. Kehagias and Ph. Komninou and G. P. Dimitrakopulos and Th. Karakostas and L. Lari and P. R. Chalker and M. H. Gass and H. Riechert }, title = { Properties of GaN nanowires grown by molecular beam epitaxy }, journal = { IEEE Journal of Selected Topics in Quantum Electronics }, volume = { 17 }, year = { 2011 }, pages = { 878 } }

TY - JOUR AU - L. Geelhaar AU - C. Chèze AU - B. Jenichen AU - O. Brandt AU - C. Pfüller AU - S. Münch AU - R. Rothemund AU - S. Reitzenstein AU - A. Forchel AU - Th. Kehagias AU - Ph. Komninou AU - G. P. Dimitrakopulos AU - Th. Karakostas AU - L. Lari AU - P. R. Chalker AU - M. H. Gass AU - H. Riechert TI - Properties of GaN nanowires grown by molecular beam epitaxy JF - IEEE Journal of Selected Topics in Quantum Electronics JA - IEEE J. Sel. Topics Quantum Electron. J1 - VL - 17 SP - 878 PY - 2011/01/01

Properties of uniform diameter InN nanowires obtained under Si doping

@article{ author = { T. Gotschke and E. O. Schäfer-Nolte and R. Caterino and F. Limbach and T. Stoica and E. Sutter and K. Jeganathan and R. Calarco }, title = { Properties of uniform diameter InN nanowires obtained under Si doping }, journal = { Nanotechnology }, volume = { 22 }, year = { 2011 }, pages = { 125704 } }

TY - JOUR AU - T. Gotschke AU - E. O. Schäfer-Nolte AU - R. Caterino AU - F. Limbach AU - T. Stoica AU - E. Sutter AU - K. Jeganathan AU - R. Calarco TI - Properties of uniform diameter InN nanowires obtained under Si doping JF - Nanotechnology JA - Nanotechnology J1 - NAN VL - 22 SP - 125704 PY - 2011/01/01

Rare-earth oxide superlattices on Si(111)

@article{ author = { F. Grosse and S. Bokoch and S. Behnke and A. Proessdorf and M. Niehle and A. Trampert and W. Braun and H. Riechert }, title = { Rare-earth oxide superlattices on Si(111) }, journal = { Journal of Crystal Growth }, volume = { 323 }, year = { 2011 }, pages = { 95 } }

TY - JOUR AU - F. Grosse AU - S. Bokoch AU - S. Behnke AU - A. Proessdorf AU - M. Niehle AU - A. Trampert AU - W. Braun AU - H. Riechert TI - Rare-earth oxide superlattices on Si(111) JF - Journal of Crystal Growth JA - J. Cryst. Growth J1 - JGC VL - 323 SP - 95 PY - 2011/01/01

Surface acoustic analog of Bloch oscillations, Wannier-Stark ladders and Landau-Zener tunneling

@article{ author = { M. M. de Lima Jr. and Yu. A. Kosevich and P. V. Santos and A. Cantarero }, title = { Surface acoustic analog of Bloch oscillations, Wannier-Stark ladders and Landau-Zener tunneling }, journal = { Proceedings of the 30th International Conference on the Physics of Semiconductors; }, volume = { 1399 }, year = { 2011 }, pages = { 335 } }

TY - JOUR AU - M. M. de Lima Jr. AU - Yu. A. Kosevich AU - P. V. Santos AU - A. Cantarero TI - Surface acoustic analog of Bloch oscillations, Wannier-Stark ladders and Landau-Zener tunneling JF - Proceedings of the 30th International Conference on the Physics of Semiconductors; JA - AIP Conf. Proc. J1 - VL - 1399 SP - 335 PY - 2011/01/01

Acoustically-driven single photon sources on (311)A GaAs

@article{ author = { S. Lazic and O. D. D. Couto and F. Iikawa and J. A. H. Stotz and R. Hey and P. V. Santos }, title = { Acoustically-driven single photon sources on (311)A GaAs }, journal = { Proceedings of the 30th International Conference on the Physics of Semiconductors; }, volume = { 1399 }, year = { 2011 }, pages = { 1035 } }

TY - JOUR AU - S. Lazic AU - O. D. D. Couto AU - F. Iikawa AU - J. A. H. Stotz AU - R. Hey AU - P. V. Santos TI - Acoustically-driven single photon sources on (311)A GaAs JF - Proceedings of the 30th International Conference on the Physics of Semiconductors; JA - AIP Conf. Proc. J1 - VL - 1399 SP - 1035 PY - 2011/01/01

Doping of III-nitride nanowires grown by molecular beam epitaxy

@article{ author = { T. Stoica and R. Calarco }, title = { Doping of III-nitride nanowires grown by molecular beam epitaxy }, journal = { IEEE Journal of Selected Topics in Quantum Electronics }, volume = { 17 }, year = { 2011 }, pages = { 859 } }

TY - JOUR AU - T. Stoica AU - R. Calarco TI - Doping of III-nitride nanowires grown by molecular beam epitaxy JF - IEEE Journal of Selected Topics in Quantum Electronics JA - IEEE J. Sel. Topics Quantum Electron. J1 - VL - 17 SP - 859 PY - 2011/01/01

Diffuse x-ray scattering at low-dimensional nanostructures

@article{ author = { M. Hanke }, title = { Diffuse x-ray scattering at low-dimensional nanostructures }, journal = { Mechanical Stress on the Nanoscale; edited by M. Hanbuecken, P. Mueller, and R. B. Wehrspohn (Wiley, Weinheim, 2011) }, volume = { }, year = { 2011 }, pages = { 259 } }

TY - JOUR AU - M. Hanke TI - Diffuse x-ray scattering at low-dimensional nanostructures JF - Mechanical Stress on the Nanoscale; edited by M. Hanbuecken, P. Mueller, and R. B. Wehrspohn (Wiley, Weinheim, 2011) JA - MSN J1 - VL - SP - 259 PY - 2011/01/01

Electrical double layer gating in GaAs-(Al,Ga)As heterostructures using tetrabutylammonium bis(trifluoromethylsulfonyl)imide

@article{ author = { Y. Takagaki and A. Wirsig and M. Ramsteiner and R. Hey and C. Hucho }, title = { Electrical double layer gating in GaAs-(Al,Ga)As heterostructures using tetrabutylammonium bis(trifluoromethylsulfonyl)imide }, journal = { Semiconductor Science and Technology }, volume = { 26 }, year = { 2011 }, pages = { 045003 } }

TY - JOUR AU - Y. Takagaki AU - A. Wirsig AU - M. Ramsteiner AU - R. Hey AU - C. Hucho TI - Electrical double layer gating in GaAs-(Al,Ga)As heterostructures using tetrabutylammonium bis(trifluoromethylsulfonyl)imide JF - Semiconductor Science and Technology JA - Semicond. Sci. Technol. J1 - SST VL - 26 SP - 045003 PY - 2011/01/01

Suitability of Au- and self-assisted GaAs nanowires for optoelectronic applications

@article{ author = { S. Breuer and C. Pfüller and T. Flissikowski and O. Brandt and H.T. Grahn and L. Geelhaar and H. Riechert }, title = { Suitability of Au- and self-assisted GaAs nanowires for optoelectronic applications }, journal = { Nano Letters }, volume = { 11 }, year = { 2011 }, pages = { 1276 } }

TY - JOUR AU - S. Breuer AU - C. Pfüller AU - T. Flissikowski AU - O. Brandt AU - H.T. Grahn AU - L. Geelhaar AU - H. Riechert TI - Suitability of Au- and self-assisted GaAs nanowires for optoelectronic applications JF - Nano Letters JA - Nano Lett. J1 - VL - 11 SP - 1276 PY - 2011/01/01

Short range correlations of misfit dislocations in the x-ray diffraction peaks

@article{ author = { V. M. Kaganer and K. K. Sabelfeld }, title = { Short range correlations of misfit dislocations in the x-ray diffraction peaks }, journal = { Physica Status Solidi A }, volume = { 208 }, year = { 2011 }, pages = { 2563 } }

TY - JOUR AU - V. M. Kaganer AU - K. K. Sabelfeld TI - Short range correlations of misfit dislocations in the x-ray diffraction peaks JF - Physica Status Solidi A JA - Phys. Status Solidi A J1 - PSSA VL - 208 SP - 2563 PY - 2011/01/01

Atomic configuration of the MnAs/GaAs(110) interface analyzed by high-resolution electron microscopy

@article{ author = { Q. Wan and A. Trampert }, title = { Atomic configuration of the MnAs/GaAs(110) interface analyzed by high-resolution electron microscopy }, journal = { Journal of Physical Chemistry C }, volume = { 115 }, year = { 2011 }, pages = { 529 } }

TY - JOUR AU - Q. Wan AU - A. Trampert TI - Atomic configuration of the MnAs/GaAs(110) interface analyzed by high-resolution electron microscopy JF - Journal of Physical Chemistry C JA - J. Phys. Chem. C J1 - VL - 115 SP - 529 PY - 2011/01/01

Selective-area catalyst-free MBE growth of GaN nanowires using a patterned oxide layer

@article{ author = { T. Schumann and T. Gotschke and F. Limbach and T. Stoica and R. Calarco }, title = { Selective-area catalyst-free MBE growth of GaN nanowires using a patterned oxide layer }, journal = { Nanotechnology }, volume = { 22 }, year = { 2011 }, pages = { 095603 } }

TY - JOUR AU - T. Schumann AU - T. Gotschke AU - F. Limbach AU - T. Stoica AU - R. Calarco TI - Selective-area catalyst-free MBE growth of GaN nanowires using a patterned oxide layer JF - Nanotechnology JA - Nanotechnology J1 - NAN VL - 22 SP - 095603 PY - 2011/01/01

Room-temperature spin injection and spin loss across a GaNAs/GaAs interface

@article{ author = { Y. Puttisong and X. J. Wang and I. A. Buyanova and C. W. Tu and L. Geelhaar and H. Riechert and W. M. Chen }, title = { Room-temperature spin injection and spin loss across a GaNAs/GaAs interface }, journal = { Applied Physics Letters }, volume = { 98 }, year = { 2011 }, pages = { 012112 } }

TY - JOUR AU - Y. Puttisong AU - X. J. Wang AU - I. A. Buyanova AU - C. W. Tu AU - L. Geelhaar AU - H. Riechert AU - W. M. Chen TI - Room-temperature spin injection and spin loss across a GaNAs/GaAs interface JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 98 SP - 012112 PY - 2011/01/01

GaN/Fe core/shell nanowires grown for nonvolatile spintronics on Si

@article{ author = { C. X. Gao and R. Farshchi and C. Roder and P. Dogan and O. Brandt }, title = { GaN/Fe core/shell nanowires grown for nonvolatile spintronics on Si }, journal = { Physical Review B: Solid State }, volume = { 83 }, year = { 2011 }, pages = { 245323 } }

TY - JOUR AU - C. X. Gao AU - R. Farshchi AU - C. Roder AU - P. Dogan AU - O. Brandt TI - GaN/Fe core/shell nanowires grown for nonvolatile spintronics on Si JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 83 SP - 245323 PY - 2011/01/01

Multi-channel magnetotransport in Co₂FeSi/(Al,Ga)As spin-LEDs

@article{ author = { R. Farshchi and P. Bruski and M. Ramsteiner and J. Herfort and O. Brandt and Y. Manzke and K.-J. Friedland and H.T. Grahn }, title = { Multi-channel magnetotransport in Co₂FeSi/(Al,Ga)As spin-LEDs }, journal = { Solid State Communications }, volume = { 151 }, year = { 2011 }, pages = { 436 } }

TY - JOUR AU - R. Farshchi AU - P. Bruski AU - M. Ramsteiner AU - J. Herfort AU - O. Brandt AU - Y. Manzke AU - K.-J. Friedland AU - H.T. Grahn TI - Multi-channel magnetotransport in Co₂FeSi/(Al,Ga)As spin-LEDs JF - Solid State Communications JA - Solid State Commun. J1 - SSC VL - 151 SP - 436 PY - 2011/01/01

Nucleation and coalescence effects on the density of self-induced GaN nanowires grown by molecular beam epitaxy

@article{ author = { V. Consonni and M. Knelangen and A. Trampert and L. Geelhaar and H. Riechert }, title = { Nucleation and coalescence effects on the density of self-induced GaN nanowires grown by molecular beam epitaxy }, journal = { Applied Physics Letters }, volume = { 98 }, year = { 2011 }, pages = { 071913 } }

TY - JOUR AU - V. Consonni AU - M. Knelangen AU - A. Trampert AU - L. Geelhaar AU - H. Riechert TI - Nucleation and coalescence effects on the density of self-induced GaN nanowires grown by molecular beam epitaxy JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 98 SP - 071913 PY - 2011/01/01

Electrical and structural properties of ternary rare-earth oxides on Si and higher mobility substrates and their integration as high-k gate dielectrics in MOSFET devices

@article{ author = { J. M. J. Lopes and E. Durvgun Özben and M. Schnee and R. Luptak and A. Nichau and A. Tiedemann and W. Yu and Q. T. Zhao and A. Besmehn and U. Breuer and M. Luysberg and St. Lenk and J. Schubert and S. Mantl }, title = { Electrical and structural properties of ternary rare-earth oxides on Si and higher mobility substrates and their integration as high-k gate dielectrics in MOSFET devices }, journal = { ECS Transactions }, volume = { 35 }, year = { 2011 }, pages = { 461 } }

TY - JOUR AU - J. M. J. Lopes AU - E. Durvgun Özben AU - M. Schnee AU - R. Luptak AU - A. Nichau AU - A. Tiedemann AU - W. Yu AU - Q. T. Zhao AU - A. Besmehn AU - U. Breuer AU - M. Luysberg AU - St. Lenk AU - J. Schubert AU - S. Mantl TI - Electrical and structural properties of ternary rare-earth oxides on Si and higher mobility substrates and their integration as high-k gate dielectrics in MOSFET devices JF - ECS Transactions JA - ECS Trans. J1 - VL - 35 SP - 461 PY - 2011/01/01

Importance of strain for green emitters based on (In,Ga)N films of non-polar orientation

@article{ author = { S. Ghosh and H.T. Grahn }, title = { Importance of strain for green emitters based on (In,Ga)N films of non-polar orientation }, journal = { Physica Status Solidi B }, volume = { 248 }, year = { 2011 }, pages = { 1708 } }

TY - JOUR AU - S. Ghosh AU - H.T. Grahn TI - Importance of strain for green emitters based on (In,Ga)N films of non-polar orientation JF - Physica Status Solidi B JA - Phys. Status Solidi B J1 - PSSB VL - 248 SP - 1708 PY - 2011/01/01

Nonlinear transport in quantum-cascade lasers: The role of electric-field domain formation for the laser characteristics

@article{ author = { M. Wienold and L. Schrottke and M. Giehler and R. Hey and H.T. Grahn }, title = { Nonlinear transport in quantum-cascade lasers: The role of electric-field domain formation for the laser characteristics }, journal = { Journal of Applied Physics }, volume = { 109 }, year = { 2011 }, pages = { 073112 } }

TY - JOUR AU - M. Wienold AU - L. Schrottke AU - M. Giehler AU - R. Hey AU - H.T. Grahn TI - Nonlinear transport in quantum-cascade lasers: The role of electric-field domain formation for the laser characteristics JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 109 SP - 073112 PY - 2011/01/01

Nitride nanowire structures for LED applications

@article{ author = { H. Riechert and O. Brandt and C. Chèze and V. Consonni and M. Knelangen and J. Lähnemann and F. Limbach and C. Pfüller and A. Trampert and M. Wölz and L. Geelhaar }, title = { Nitride nanowire structures for LED applications }, journal = { Proceedings of SPIE }, volume = { 7954 }, year = { 2011 }, pages = { 79540S } }

TY - JOUR AU - H. Riechert AU - O. Brandt AU - C. Chèze AU - V. Consonni AU - M. Knelangen AU - J. Lähnemann AU - F. Limbach AU - C. Pfüller AU - A. Trampert AU - M. Wölz AU - L. Geelhaar TI - Nitride nanowire structures for LED applications JF - Proceedings of SPIE JA - Proc. SPIE J1 - VL - 7954 SP - 79540S PY - 2011/01/01

Influence of the adatom diffusion on selective growth of GaN nanowire regular arrays

@article{ author = { T. Gotschke and T. Schumann and F. Limbach and T. Stoica and R. Calarco }, title = { Influence of the adatom diffusion on selective growth of GaN nanowire regular arrays }, journal = { Applied Physics Letters }, volume = { 98 }, year = { 2011 }, pages = { 103102 } }

TY - JOUR AU - T. Gotschke AU - T. Schumann AU - F. Limbach AU - T. Stoica AU - R. Calarco TI - Influence of the adatom diffusion on selective growth of GaN nanowire regular arrays JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 98 SP - 103102 PY - 2011/01/01

Cathodoluminescence spectroscopy on selectively grown GaN nanowires

@article{ author = { T. Schumann and T. Gotschke and F. Limbach and T. Stoica and R. Calarco }, title = { Cathodoluminescence spectroscopy on selectively grown GaN nanowires }, journal = { Proceedings of SPIE }, volume = { 7939 }, year = { 2011 }, pages = { 793903 } }

TY - JOUR AU - T. Schumann AU - T. Gotschke AU - F. Limbach AU - T. Stoica AU - R. Calarco TI - Cathodoluminescence spectroscopy on selectively grown GaN nanowires JF - Proceedings of SPIE JA - Proc. SPIE J1 - VL - 7939 SP - 793903 PY - 2011/01/01

InN/InGaN multiple quantum wells emitting at 1.5 μm grown by molecular beam epitaxy

@article{ author = { J. Grandal and J. Pereiro and A. Bengoechea-Encabo and S. Fernández-Garrido and M. A. Sánchez-García and E. Munoz and E. Calleja and E. Luna and A. Trampert }, title = { InN/InGaN multiple quantum wells emitting at 1.5 <span class="math"><em>μ</em></span>m grown by molecular beam epitaxy }, journal = { Applied Physics Letters }, volume = { 98 }, year = { 2011 }, pages = { 061901 } }

TY - JOUR AU - J. Grandal AU - J. Pereiro AU - A. Bengoechea-Encabo AU - S. Fernández-Garrido AU - M. A. Sánchez-García AU - E. Munoz AU - E. Calleja AU - E. Luna AU - A. Trampert TI - InN/InGaN multiple quantum wells emitting at 1.5 <span class="math"><em>μ</em></span>m grown by molecular beam epitaxy JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 98 SP - 061901 PY - 2011/01/01

Formation mechanism of 0001 ZnO epitaxial layer on γ-LiAlO₂(100) substrate by chemical vapor deposition

@article{ author = { T.-H. Huang and L. Chang and M. M. C. Chou and U. Jahn }, title = { Formation mechanism of 0001 ZnO epitaxial layer on <span class="math"><em>γ</em></span>-LiAlO₂(100) substrate by chemical vapor deposition }, journal = { Journal of the Electrochemical Society }, volume = { 158 }, year = { 2011 }, pages = { H38 } }

TY - JOUR AU - T.-H. Huang AU - L. Chang AU - M. M. C. Chou AU - U. Jahn TI - Formation mechanism of 0001 ZnO epitaxial layer on <span class="math"><em>γ</em></span>-LiAlO₂(100) substrate by chemical vapor deposition JF - Journal of the Electrochemical Society JA - J. Electrochem. Soc. J1 - VL - 158 SP - H38 PY - 2011/01/01

Influence of composition and bottom electrode properties on the local conductivity of TiN/HfTiO₂ and TiN/Ru/HfTiO₂ stacks

@article{ author = { D. Martin and M. Grube and P. Reinig and L. Oberbeck and J. Heitmann and W. M. Weber and T. Mikolajick and H. Riechert }, title = { Influence of composition and bottom electrode properties on the local conductivity of TiN/HfTiO₂ and TiN/Ru/HfTiO₂ stacks }, journal = { Applied Physics Letters }, volume = { 98 }, year = { 2011 }, pages = { 012901 } }

TY - JOUR AU - D. Martin AU - M. Grube AU - P. Reinig AU - L. Oberbeck AU - J. Heitmann AU - W. M. Weber AU - T. Mikolajick AU - H. Riechert TI - Influence of composition and bottom electrode properties on the local conductivity of TiN/HfTiO₂ and TiN/Ru/HfTiO₂ stacks JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 98 SP - 012901 PY - 2011/01/01

Macroscopic and microscopic electrical characterizations of high-k ZrO₂ and ZrO₂/Al₂O₃/ZrO₂ metal-insulator-metal structures

@article{ author = { D. Martin and M. Grube and W. Weinreich and J. Müller and L. Wilde and E. Erben and W. M. Weber and J. Heitmann and U. Schröder and T. Mikolajick and H. Riechert }, title = { Macroscopic and microscopic electrical characterizations of high-<em>k</em> ZrO₂ and ZrO₂/Al₂O₃/ZrO₂ metal-insulator-metal structures }, journal = { Journal of Vacuum Science and Technology B }, volume = { 29 }, year = { 2011 }, pages = { 01AC02 } }

TY - JOUR AU - D. Martin AU - M. Grube AU - W. Weinreich AU - J. Müller AU - L. Wilde AU - E. Erben AU - W. M. Weber AU - J. Heitmann AU - U. Schröder AU - T. Mikolajick AU - H. Riechert TI - Macroscopic and microscopic electrical characterizations of high-<em>k</em> ZrO₂ and ZrO₂/Al₂O₃/ZrO₂ metal-insulator-metal structures JF - Journal of Vacuum Science and Technology B JA - J. Vac. Sci. Technol. B J1 - JVSTB VL - 29 SP - 01AC02 PY - 2011/01/01

Applicability of molecular beam deposition for the growth of high-k oxides

@article{ author = { M. Grube and D. Martin and W. M. Weber and T. Mikolajick and O. Bierwagen and L. Geelhaar and H. Riechert }, title = { Applicability of molecular beam deposition for the growth of high-<em>k</em> oxides }, journal = { Journal of Vacuum Science and Technology B }, volume = { 29 }, year = { 2011 }, pages = { 01AC05 } }

TY - JOUR AU - M. Grube AU - D. Martin AU - W. M. Weber AU - T. Mikolajick AU - O. Bierwagen AU - L. Geelhaar AU - H. Riechert TI - Applicability of molecular beam deposition for the growth of high-<em>k</em> oxides JF - Journal of Vacuum Science and Technology B JA - J. Vac. Sci. Technol. B J1 - JVSTB VL - 29 SP - 01AC05 PY - 2011/01/01

Strain controlled growth of crack-free GaN with low defect density on silicon (111) substrate

@article{ author = { P. Drechsel and H. Riechert }, title = { Strain controlled growth of crack-free GaN with low defect density on silicon (111) substrate }, journal = { Journal of Crystal Growth }, volume = { 315 }, year = { 2011 }, pages = { 211 } }

TY - JOUR AU - P. Drechsel AU - H. Riechert TI - Strain controlled growth of crack-free GaN with low defect density on silicon (111) substrate JF - Journal of Crystal Growth JA - J. Cryst. Growth J1 - JGC VL - 315 SP - 211 PY - 2011/01/01

Distribution of Mn in ferromagnetic (In,Mn)Sb films grown on (001) GaAs using MBE

@article{ author = { L. Tran and F. Hatami and W. T. Masselink and J. Herfort and A. Trampert }, title = { Distribution of Mn in ferromagnetic (In,Mn)Sb films grown on (001) GaAs using MBE }, journal = { Journal of Crystal Growth }, volume = { 323 }, year = { 2011 }, pages = { 340 } }

TY - JOUR AU - L. Tran AU - F. Hatami AU - W. T. Masselink AU - J. Herfort AU - A. Trampert TI - Distribution of Mn in ferromagnetic (In,Mn)Sb films grown on (001) GaAs using MBE JF - Journal of Crystal Growth JA - J. Cryst. Growth J1 - JGC VL - 323 SP - 340 PY - 2011/01/01

Effect of indium incorporation on optical and structural properties of m-plane InGaN/GaN MQW on LiAlO₂ substrates

@article{ author = { C. Mauder and B. Reuters and K. R. Wang and D. Fahle and A. Trampert and M. V. Rzheutskii and E. V. Lutsenko and G. P. Yablonskii and J. F. Woitok and M. M. C. Chou and M. Heuken and H. Kalisch and R. H. Jansen }, title = { Effect of indium incorporation on optical and structural properties of <em>m</em>-plane InGaN/GaN MQW on LiAlO₂ substrates }, journal = { Journal of Crystal Growth }, volume = { 315 }, year = { 2011 }, pages = { 246 } }

TY - JOUR AU - C. Mauder AU - B. Reuters AU - K. R. Wang AU - D. Fahle AU - A. Trampert AU - M. V. Rzheutskii AU - E. V. Lutsenko AU - G. P. Yablonskii AU - J. F. Woitok AU - M. M. C. Chou AU - M. Heuken AU - H. Kalisch AU - R. H. Jansen TI - Effect of indium incorporation on optical and structural properties of <em>m</em>-plane InGaN/GaN MQW on LiAlO₂ substrates JF - Journal of Crystal Growth JA - J. Cryst. Growth J1 - JGC VL - 315 SP - 246 PY - 2011/01/01

N-face GaN nanorods: Continuous-flux MOVPE growth and morphological properties

@article{ author = { W. Bergbauer and M. Strassburg and Ch. Kölper and N. Linder and C. Roder and J. Lähnemann and A. Trampert and S. Fündling and S.F. Li and H.-H. Wehmann and A. Waag }, title = { N-face GaN nanorods: Continuous-flux MOVPE growth and morphological properties }, journal = { Journal of Crystal Growth }, volume = { 315 }, year = { 2011 }, pages = { 164 } }

TY - JOUR AU - W. Bergbauer AU - M. Strassburg AU - Ch. Kölper AU - N. Linder AU - C. Roder AU - J. Lähnemann AU - A. Trampert AU - S. Fündling AU - S.F. Li AU - H.-H. Wehmann AU - A. Waag TI - N-face GaN nanorods: Continuous-flux MOVPE growth and morphological properties JF - Journal of Crystal Growth JA - J. Cryst. Growth J1 - JGC VL - 315 SP - 164 PY - 2011/01/01

Optical communication of spin information between light emitting diodes

@article{ author = { R. Farshchi and M. Ramsteiner and J. Herfort and A. Tahraoui and H.T. Grahn }, title = { Optical communication of spin information between light emitting diodes }, journal = { Applied Physics Letters }, volume = { 98 }, year = { 2011 }, pages = { 162508 } }

TY - JOUR AU - R. Farshchi AU - M. Ramsteiner AU - J. Herfort AU - A. Tahraoui AU - H.T. Grahn TI - Optical communication of spin information between light emitting diodes JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 98 SP - 162508 PY - 2011/01/01

Structural evolution of self-assisted GaAs nanowires grown on Si(111)

@article{ author = { A. Biermanns and S. Breuer and A. Davydok and L. Geelhaar and U. Pietsch }, title = { Structural evolution of self-assisted GaAs nanowires grown on Si(111) }, journal = { Physica Status Solidi Rapid Research Letters }, volume = { 5 }, year = { 2011 }, pages = { 156 } }

TY - JOUR AU - A. Biermanns AU - S. Breuer AU - A. Davydok AU - L. Geelhaar AU - U. Pietsch TI - Structural evolution of self-assisted GaAs nanowires grown on Si(111) JF - Physica Status Solidi Rapid Research Letters JA - Phys. Status Solidi-Rapid Res. Lett. J1 - VL - 5 SP - 156 PY - 2011/01/01

Analyzing the growth of In_xGa_1-xN/GaN superlattices in self-induced GaN nanowires by x-ray diffraction

@article{ author = { M. Wölz and V. M. Kaganer and O. Brandt and L. Geelhaar and H. Riechert }, title = { Analyzing the growth of In_xGa_1-xN/GaN superlattices in self-induced GaN nanowires by x-ray diffraction }, journal = { Applied Physics Letters }, volume = { 98 }, year = { 2011 }, pages = { 261907 } }

TY - JOUR AU - M. Wölz AU - V. M. Kaganer AU - O. Brandt AU - L. Geelhaar AU - H. Riechert TI - Analyzing the growth of In_xGa_1-xN/GaN superlattices in self-induced GaN nanowires by x-ray diffraction JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 98 SP - 261907 PY - 2011/01/01

Comparison of the spectral and temporal emission characteristics of homo- and heteroepitaxial ZnO nanowires

@article{ author = { C. Pfüller and O. Brandt and T. Flissikowski and H.T. Grahn and T. Ive and J. S. Speck and S. P. DenBaars }, title = { Comparison of the spectral and temporal emission characteristics of homo- and heteroepitaxial ZnO nanowires }, journal = { Applied Physics Letters }, volume = { 98 }, year = { 2011 }, pages = { 113113 } }

TY - JOUR AU - C. Pfüller AU - O. Brandt AU - T. Flissikowski AU - H.T. Grahn AU - T. Ive AU - J. S. Speck AU - S. P. DenBaars TI - Comparison of the spectral and temporal emission characteristics of homo- and heteroepitaxial ZnO nanowires JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 98 SP - 113113 PY - 2011/01/01

Emergent multistability in assembled nanostructures

@article{ author = { J. Yang and S. C. Erwin and K. Kanisawa and C. Nacci and S. Fölsch }, title = { Emergent multistability in assembled nanostructures }, journal = { Nano Letters }, volume = { 11 }, year = { 2011 }, pages = { 2486 } }

TY - JOUR AU - J. Yang AU - S. C. Erwin AU - K. Kanisawa AU - C. Nacci AU - S. Fölsch TI - Emergent multistability in assembled nanostructures JF - Nano Letters JA - Nano Lett. J1 - VL - 11 SP - 2486 PY - 2011/01/01

X-ray diffraction profiles from axial nanowire heterostructures

@article{ author = { V. M. Kaganer and M. Wölz and O. Brandt and L. Geelhaar and H. Riechert }, title = { X-ray diffraction profiles from axial nanowire heterostructures }, journal = { Physical Review B: Solid State }, volume = { 83 }, year = { 2011 }, pages = { 245321 } }

TY - JOUR AU - V. M. Kaganer AU - M. Wölz AU - O. Brandt AU - L. Geelhaar AU - H. Riechert TI - X-ray diffraction profiles from axial nanowire heterostructures JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 83 SP - 245321 PY - 2011/01/01

Substitution of bismuth in hot wall epitaxy of Bi₂Se₃ on transition metals

@article{ author = { Y. Takagaki and U. Jahn and M. Ramsteiner and K.-J. Friedland }, title = { Substitution of bismuth in hot wall epitaxy of Bi₂Se₃ on transition metals }, journal = { Semiconductor Science and Technology }, volume = { 26 }, year = { 2011 }, pages = { 085031 } }

TY - JOUR AU - Y. Takagaki AU - U. Jahn AU - M. Ramsteiner AU - K.-J. Friedland TI - Substitution of bismuth in hot wall epitaxy of Bi₂Se₃ on transition metals JF - Semiconductor Science and Technology JA - Semicond. Sci. Technol. J1 - SST VL - 26 SP - 085031 PY - 2011/01/01

Surface-induced effects in GaN nanowires

@article{ author = { R. Calarco and T. Stoica and O. Brandt and L. Geelhaar }, title = { Surface-induced effects in GaN nanowires }, journal = { Journal of Materials Research }, volume = { 26 }, year = { 2011 }, pages = { 2157 } }

TY - JOUR AU - R. Calarco AU - T. Stoica AU - O. Brandt AU - L. Geelhaar TI - Surface-induced effects in GaN nanowires JF - Journal of Materials Research JA - J. Mater. Res. J1 - JMR VL - 26 SP - 2157 PY - 2011/01/01

Accurate calibration for the quantification of the Al content in AlGaN epitaxial layers by energy-dispersive x-ray spectroscopy in a transmission electron microscope

@article{ author = { H. Amari and L. Lari and H. Y. Zhang and L. Geelhaar and C. Chèze and M. J. Kappers and C. McAleese and C. J. Humphreys and T. Walther }, title = { Accurate calibration for the quantification of the Al content in AlGaN epitaxial layers by energy-dispersive x-ray spectroscopy in a transmission electron microscope }, journal = { Journal of Physics: Conference Series }, volume = { 326 }, year = { 2011 }, pages = { 012028 } }

TY - JOUR AU - H. Amari AU - L. Lari AU - H. Y. Zhang AU - L. Geelhaar AU - C. Chèze AU - M. J. Kappers AU - C. McAleese AU - C. J. Humphreys AU - T. Walther TI - Accurate calibration for the quantification of the Al content in AlGaN epitaxial layers by energy-dispersive x-ray spectroscopy in a transmission electron microscope JF - Journal of Physics: Conference Series JA - J. Phys.: Conf. Ser. J1 - VL - 326 SP - 012028 PY - 2011/01/01

Nanoscale EELS analysis of elemental distribution and band-gap properties in AlGaN epitaxial layers

@article{ author = { H. Amari and H. Y. Zhang and L. Geelhaar and C. Chèze and M. J. Kappers and T. Walther }, title = { Nanoscale EELS analysis of elemental distribution and band-gap properties in AlGaN epitaxial layers }, journal = { Journal of Physics: Conference Series }, volume = { 326 }, year = { 2011 }, pages = { 012039 } }

TY - JOUR AU - H. Amari AU - H. Y. Zhang AU - L. Geelhaar AU - C. Chèze AU - M. J. Kappers AU - T. Walther TI - Nanoscale EELS analysis of elemental distribution and band-gap properties in AlGaN epitaxial layers JF - Journal of Physics: Conference Series JA - J. Phys.: Conf. Ser. J1 - VL - 326 SP - 012039 PY - 2011/01/01

Analysis of GaSb and AlSb reconstructions on GaSb(111) A- and B-oriented surfaces by azimuthal-scan reflection high-energy electron diffraction

@article{ author = { A. Proessdorf and F. Grosse and W. Braun and F. Katmis and H. Riechert and O. Romanyuk }, title = { Analysis of GaSb and AlSb reconstructions on GaSb(111) <em>A</em>- and <em>B</em>-oriented surfaces by azimuthal-scan reflection high-energy electron diffraction }, journal = { Physical Review B: Solid State }, volume = { 83 }, year = { 2011 }, pages = { 155317 } }

TY - JOUR AU - A. Proessdorf AU - F. Grosse AU - W. Braun AU - F. Katmis AU - H. Riechert AU - O. Romanyuk TI - Analysis of GaSb and AlSb reconstructions on GaSb(111) <em>A</em>- and <em>B</em>-oriented surfaces by azimuthal-scan reflection high-energy electron diffraction JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 83 SP - 155317 PY - 2011/01/01

Direct observation of N-(group V) bonding defects in dilute nitride semiconductors using hard x-ray photoelectron spectroscopy

@article{ author = { F. Ishikawa and S. Fuyuno and K. Higashi and M. Kondow and M. Machida and H. Oji and J.-Y. Son and A. Trampert and K. Umeno and Y. Furukawa and A. Wakahara }, title = { Direct observation of N-(group V) bonding defects in dilute nitride semiconductors using hard x-ray photoelectron spectroscopy }, journal = { Applied Physics Letters }, volume = { 98 }, year = { 2011 }, pages = { 121915 } }

TY - JOUR AU - F. Ishikawa AU - S. Fuyuno AU - K. Higashi AU - M. Kondow AU - M. Machida AU - H. Oji AU - J.-Y. Son AU - A. Trampert AU - K. Umeno AU - Y. Furukawa AU - A. Wakahara TI - Direct observation of N-(group V) bonding defects in dilute nitride semiconductors using hard x-ray photoelectron spectroscopy JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 98 SP - 121915 PY - 2011/01/01

Remote dipolar interactions for objective density calibration and flow control of excitonic fluids

@article{ author = { K. Cohen and R. Rapaport and P. V. Santos }, title = { Remote dipolar interactions for objective density calibration and flow control of excitonic fluids }, journal = { Physical Review Letters }, volume = { 106 }, year = { 2011 }, pages = { 126402 } }

TY - JOUR AU - K. Cohen AU - R. Rapaport AU - P. V. Santos TI - Remote dipolar interactions for objective density calibration and flow control of excitonic fluids JF - Physical Review Letters JA - Phys. Rev. Lett. J1 - PRL VL - 106 SP - 126402 PY - 2011/01/01

Epitaxial interfaces between crystallographically mismatched materials

@article{ author = { S. C. Erwin and C. X. Gao and C. Roder and J. Lähnemann and O. Brandt }, title = { Epitaxial interfaces between crystallographically mismatched materials }, journal = { Physical Review Letters }, volume = { 107 }, year = { 2011 }, pages = { 026102 } }

TY - JOUR AU - S. C. Erwin AU - C. X. Gao AU - C. Roder AU - J. Lähnemann AU - O. Brandt TI - Epitaxial interfaces between crystallographically mismatched materials JF - Physical Review Letters JA - Phys. Rev. Lett. J1 - PRL VL - 107 SP - 026102 PY - 2011/01/01

Physical origin of the incubation time of self-induced GaN nanowires

@article{ author = { V. Consonni and A. Trampert and L. Geelhaar and H. Riechert }, title = { Physical origin of the incubation time of self-induced GaN nanowires }, journal = { Applied Physics Letters }, volume = { 99 }, year = { 2011 }, pages = { 033102 } }

TY - JOUR AU - V. Consonni AU - A. Trampert AU - L. Geelhaar AU - H. Riechert TI - Physical origin of the incubation time of self-induced GaN nanowires JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 99 SP - 033102 PY - 2011/01/01

Influence of the silicon carbide surface morphology on the epitaxial graphene formation

@article{ author = { M. H. Oliveira Jr. and T. Schumann and M. Ramsteiner and J. M. J. Lopes and H. Riechert }, title = { Influence of the silicon carbide surface morphology on the epitaxial graphene formation }, journal = { Applied Physics Letters }, volume = { 99 }, year = { 2011 }, pages = { 111901 } }

TY - JOUR AU - M. H. Oliveira Jr. AU - T. Schumann AU - M. Ramsteiner AU - J. M. J. Lopes AU - H. Riechert TI - Influence of the silicon carbide surface morphology on the epitaxial graphene formation JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 99 SP - 111901 PY - 2011/01/01

In(Ga)As/GaAs(001) quantum dot molecules probed by nanofocus high resolution x-ray diffraction with 100 nm resolution

@article{ author = { M. Dubslaff and M. Hanke and M. Burghammer and S. Schöder and R. Hoppe and C. G. Schroer and Yu. I. Mazur and Zh. M. Wang and J. H. Lee and G. J. Salamo }, title = { In(Ga)As/GaAs(001) quantum dot molecules probed by nanofocus high resolution x-ray diffraction with 100 nm resolution }, journal = { Applied Physics Letters }, volume = { 98 }, year = { 2011 }, pages = { 213105 } }

TY - JOUR AU - M. Dubslaff AU - M. Hanke AU - M. Burghammer AU - S. Schöder AU - R. Hoppe AU - C. G. Schroer AU - Yu. I. Mazur AU - Zh. M. Wang AU - J. H. Lee AU - G. J. Salamo TI - In(Ga)As/GaAs(001) quantum dot molecules probed by nanofocus high resolution x-ray diffraction with 100 nm resolution JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 98 SP - 213105 PY - 2011/01/01

Assembling indium atoms into nanostructures on a cleaved InAs(110) surface

@article{ author = { K. Suzuki and S. Fölsch and K. Kanisawa }, title = { Assembling indium atoms into nanostructures on a cleaved InAs(110) surface }, journal = { Applied Physics Express }, volume = { 4 }, year = { 2011 }, pages = { 085002 } }

TY - JOUR AU - K. Suzuki AU - S. Fölsch AU - K. Kanisawa TI - Assembling indium atoms into nanostructures on a cleaved InAs(110) surface JF - Applied Physics Express JA - Appl. Phys. Express J1 - VL - 4 SP - 085002 PY - 2011/01/01

Polarity determination by energy-loss spectroscopy: Application to ultra-small III-nitride semiconductor nancolumns

@article{ author = { X. Kong and J. Ristic and M. A. Sánchez-García and E. Calleja and A. Trampert }, title = { Polarity determination by energy-loss spectroscopy: Application to ultra-small III-nitride semiconductor nancolumns }, journal = { Nanotechnology }, volume = { 22 }, year = { 2011 }, pages = { 415701-6 } }

TY - JOUR AU - X. Kong AU - J. Ristic AU - M. A. Sánchez-García AU - E. Calleja AU - A. Trampert TI - Polarity determination by energy-loss spectroscopy: Application to ultra-small III-nitride semiconductor nancolumns JF - Nanotechnology JA - Nanotechnology J1 - NAN VL - 22 SP - 415701-6 PY - 2011/01/01

Macro- and micro-strain in GaN nanowires on Si(111)

@article{ author = { B. Jenichen and O. Brandt and C. Pfüller and P. Dogan and M. Knelangen and A. Trampert }, title = { Macro- and micro-strain in GaN nanowires on Si(111) }, journal = { Nanotechnology }, volume = { 22 }, year = { 2011 }, pages = { 295714 } }

TY - JOUR AU - B. Jenichen AU - O. Brandt AU - C. Pfüller AU - P. Dogan AU - M. Knelangen AU - A. Trampert TI - Macro- and micro-strain in GaN nanowires on Si(111) JF - Nanotechnology JA - Nanotechnology J1 - NAN VL - 22 SP - 295714 PY - 2011/01/01

Wave fronts, pulses and wave trains in photoexcited superlattices behaving as excitable or oscillatory media

@article{ author = { J. I. Arana and L. L. Bonilla and H.T. Grahn }, title = { Wave fronts, pulses and wave trains in photoexcited superlattices behaving as excitable or oscillatory media }, journal = { Journal of Physics A: Mathematical and Theoretical }, volume = { 44 }, year = { 2011 }, pages = { 395003 } }

TY - JOUR AU - J. I. Arana AU - L. L. Bonilla AU - H.T. Grahn TI - Wave fronts, pulses and wave trains in photoexcited superlattices behaving as excitable or oscillatory media JF - Journal of Physics A: Mathematical and Theoretical JA - J. Phys. A: Math. Theor. J1 - VL - 44 SP - 395003 PY - 2011/01/01

Effect of stimulated emission on the transport characteristics of terahertz quantum-cascade lasers

@article{ author = { R. Sharma and L. Schrottke and M. Wienold and K. Biermann and R. Hey and H.T. Grahn }, title = { Effect of stimulated emission on the transport characteristics of terahertz quantum-cascade lasers }, journal = { Applied Physics Letters }, volume = { 99 }, year = { 2011 }, pages = { 151116 } }

TY - JOUR AU - R. Sharma AU - L. Schrottke AU - M. Wienold AU - K. Biermann AU - R. Hey AU - H.T. Grahn TI - Effect of stimulated emission on the transport characteristics of terahertz quantum-cascade lasers JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 99 SP - 151116 PY - 2011/01/01

Insight into the growth and control of single-crystal layers of Ge-Sb-Te phase-change material

@article{ author = { F. Katmis and R. Calarco and K. Perumal and P. Rodenbach and A. Giussani and M. Hanke and A. Proessdorf and A. Trampert and F. Grosse and R. Shayduk and R. Campion and W. Braun and H. Riechert }, title = { Insight into the growth and control of single-crystal layers of Ge-Sb-Te phase-change material }, journal = { Crystal Growth & Design }, volume = { 11 }, year = { 2011 }, pages = { 4606 } }

TY - JOUR AU - F. Katmis AU - R. Calarco AU - K. Perumal AU - P. Rodenbach AU - A. Giussani AU - M. Hanke AU - A. Proessdorf AU - A. Trampert AU - F. Grosse AU - R. Shayduk AU - R. Campion AU - W. Braun AU - H. Riechert TI - Insight into the growth and control of single-crystal layers of Ge-Sb-Te phase-change material JF - Crystal Growth & Design JA - Cryst. Growth Des. J1 - VL - 11 SP - 4606 PY - 2011/01/01

Azimuthal reflection high-energy electron diffraction study of MnAs growth on GaAs(001) by molecular beam epitaxy

@article{ author = { D. K. Satapathy and B. Jenichen and K. H. Ploog and W. Braun }, title = { Azimuthal reflection high-energy electron diffraction study of MnAs growth on GaAs(001) by molecular beam epitaxy }, journal = { Journal of Applied Physics }, volume = { 110 }, year = { 2011 }, pages = { 023505 } }

TY - JOUR AU - D. K. Satapathy AU - B. Jenichen AU - K. H. Ploog AU - W. Braun TI - Azimuthal reflection high-energy electron diffraction study of MnAs growth on GaAs(001) by molecular beam epitaxy JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 110 SP - 023505 PY - 2011/01/01

Concentration and relaxation depth profiles of In_xGa_1-xAs/GaAs and GaAs_1-xP_x/GaAs graded epitaxial films studied by x-ray diffraction

@article{ author = { A. Benediktovitch and A. Ulyanenkov and F. Rinaldi and K. Saito and V. M. Kaganer }, title = { Concentration and relaxation depth profiles of In_xGa_1-xAs/GaAs and GaAs_1-xP_x/GaAs graded epitaxial films studied by x-ray diffraction }, journal = { Physical Review B: Solid State }, volume = { 84 }, year = { 2011 }, pages = { 035302 } }

TY - JOUR AU - A. Benediktovitch AU - A. Ulyanenkov AU - F. Rinaldi AU - K. Saito AU - V. M. Kaganer TI - Concentration and relaxation depth profiles of In_xGa_1-xAs/GaAs and GaAs_1-xP_x/GaAs graded epitaxial films studied by x-ray diffraction JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 84 SP - 035302 PY - 2011/01/01

Hot wall epitaxy of topological insulator films

@article{ author = { Y. Takagaki and B. Jenichen and U. Jahn and M. Ramsteiner and K.-J. Friedland and J. Lähnemann }, title = { Hot wall epitaxy of topological insulator films }, journal = { Semiconductor Science and Technology }, volume = { 26 }, year = { 2011 }, pages = { 125009 } }

TY - JOUR AU - Y. Takagaki AU - B. Jenichen AU - U. Jahn AU - M. Ramsteiner AU - K.-J. Friedland AU - J. Lähnemann TI - Hot wall epitaxy of topological insulator films JF - Semiconductor Science and Technology JA - Semicond. Sci. Technol. J1 - SST VL - 26 SP - 125009 PY - 2011/01/01

Occupation of electron subbands in optically excited -acceptor-doped GaAs/Al_xGa_1-xAs heterostructure

@article{ author = { J. Lusakowski and R. Buczko and K.-J. Friedland and R. Hey }, title = { Occupation of electron subbands in optically excited -acceptor-doped GaAs/Al_xGa_1-xAs heterostructure }, journal = { Physical Review B: Solid State }, volume = { 83 }, year = { 2011 }, pages = { 245313 } }

TY - JOUR AU - J. Lusakowski AU - R. Buczko AU - K.-J. Friedland AU - R. Hey TI - Occupation of electron subbands in optically excited -acceptor-doped GaAs/Al_xGa_1-xAs heterostructure JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 83 SP - 245313 PY - 2011/01/01

Extended x-ray absorption fine structure in Ga_1-xMn_xN/SiC films with high Mn content

@article{ author = { O. Sancho-Juan and O. Martinez-Criado and A. Cantarero and N. Garro and M. Salome and J. Susini and D. Olguin and S. Dhar and K. Ploog }, title = { Extended x-ray absorption fine structure in Ga_1-xMn_xN/SiC films with high Mn content }, journal = { Physical Review B: Solid State }, volume = { 83 }, year = { 2011 }, pages = { 172103 } }

TY - JOUR AU - O. Sancho-Juan AU - O. Martinez-Criado AU - A. Cantarero AU - N. Garro AU - M. Salome AU - J. Susini AU - D. Olguin AU - S. Dhar AU - K. Ploog TI - Extended x-ray absorption fine structure in Ga_1-xMn_xN/SiC films with high Mn content JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 83 SP - 172103 PY - 2011/01/01

Acoustically induced spin-orbit interactions revealed by two-dimensional imaging of spin transport in GaAs

@article{ author = { H. Sanada and T. Sogawa and H. Gotoh and K. Onomitsu and M. Kohda and J. Nitta and P. V. Santos }, title = { Acoustically induced spin-orbit interactions revealed by two-dimensional imaging of spin transport in GaAs }, journal = { Physical Review Letters }, volume = { 106 }, year = { 2011 }, pages = { 216602 } }

TY - JOUR AU - H. Sanada AU - T. Sogawa AU - H. Gotoh AU - K. Onomitsu AU - M. Kohda AU - J. Nitta AU - P. V. Santos TI - Acoustically induced spin-orbit interactions revealed by two-dimensional imaging of spin transport in GaAs JF - Physical Review Letters JA - Phys. Rev. Lett. J1 - PRL VL - 106 SP - 216602 PY - 2011/01/01

Strong correlation of electronic and lattice excitations in GaAs/AlGaAs semiconductor quantum wells revealed by two-dimensional terahertz spectroscopy

@article{ author = { W. Kuehn and K. Reimann and M. Woerner and T. Elsaesser and R. Hey and U. Schade }, title = { Strong correlation of electronic and lattice excitations in GaAs/AlGaAs semiconductor quantum wells revealed by two-dimensional terahertz spectroscopy }, journal = { Physical Review Letters }, volume = { 107 }, year = { 2011 }, pages = { 067401 } }

TY - JOUR AU - W. Kuehn AU - K. Reimann AU - M. Woerner AU - T. Elsaesser AU - R. Hey AU - U. Schade TI - Strong correlation of electronic and lattice excitations in GaAs/AlGaAs semiconductor quantum wells revealed by two-dimensional terahertz spectroscopy JF - Physical Review Letters JA - Phys. Rev. Lett. J1 - PRL VL - 107 SP - 067401 PY - 2011/01/01

Phase stabilization of sputtered strontium zirconate

@article{ author = { M. Grube and D. Martin and W. M. Weber and T. Mikolajick and H. Riechert }, title = { Phase stabilization of sputtered strontium zirconate }, journal = { Microelectronic Engineering }, volume = { 88 }, year = { 2011 }, pages = { 1326 } }

TY - JOUR AU - M. Grube AU - D. Martin AU - W. M. Weber AU - T. Mikolajick AU - H. Riechert TI - Phase stabilization of sputtered strontium zirconate JF - Microelectronic Engineering JA - Microelectron. Eng. J1 - MiEn VL - 88 SP - 1326 PY - 2011/01/01

Understanding the selective area growth of GaN nanocolumns by MBE using Ti nanomasks

@article{ author = { A. Bengoechea-Encabo and F. Barbagini and S. Fernández-Garrido and J. Grandal and J. Ristic and M. A. Sánchez-García and E. Calleja and U. Jahn and E. Luna and A. Trampert }, title = { Understanding the selective area growth of GaN nanocolumns by MBE using Ti nanomasks }, journal = { Journal of Crystal Growth }, volume = { 325 }, year = { 2011 }, pages = { 89 } }

TY - JOUR AU - A. Bengoechea-Encabo AU - F. Barbagini AU - S. Fernández-Garrido AU - J. Grandal AU - J. Ristic AU - M. A. Sánchez-García AU - E. Calleja AU - U. Jahn AU - E. Luna AU - A. Trampert TI - Understanding the selective area growth of GaN nanocolumns by MBE using Ti nanomasks JF - Journal of Crystal Growth JA - J. Cryst. Growth J1 - JGC VL - 325 SP - 89 PY - 2011/01/01

The nanorod approach: GaN NanoLEDs for solid state lighting

@article{ author = { A. Waag and X. Wang and S. Fündling and J. Ledig and M. Erenburg and R. Neumann and M. Al Suleiman and S. Merzsch and J. D. Wei and S. F. Li and H. H. Wehmann and W. Bergbauer and M. Straßburg and A. Trampert and U. Jahn and H. Riechert }, title = { The nanorod approach: GaN NanoLEDs for solid state lighting }, journal = { Physica Status Solidi C }, volume = { {7--8} }, year = { 2011 }, pages = { 2296 } }

TY - JOUR AU - A. Waag AU - X. Wang AU - S. Fündling AU - J. Ledig AU - M. Erenburg AU - R. Neumann AU - M. Al Suleiman AU - S. Merzsch AU - J. D. Wei AU - S. F. Li AU - H. H. Wehmann AU - W. Bergbauer AU - M. Straßburg AU - A. Trampert AU - U. Jahn AU - H. Riechert TI - The nanorod approach: GaN NanoLEDs for solid state lighting JF - Physica Status Solidi C JA - Phys. Status Solidi C J1 - PSSC VL - {7--8} SP - 2296 PY - 2011/01/01

Nanopendeo coalescence overgrowth of GaN on etched nanorod array

@article{ author = { P. Shields and C. W. Liu and A. Satka and A. Trampert and J. Zuniga-Peez and B. Alloing and D. Havsko and F. Uherek and W. Wang and F. Causa and D. Allsopp }, title = { Nanopendeo coalescence overgrowth of GaN on etched nanorod array }, journal = { Physica Status Solidi C }, volume = { {7--8} }, year = { 2011 }, pages = { 2334 } }

TY - JOUR AU - P. Shields AU - C. W. Liu AU - A. Satka AU - A. Trampert AU - J. Zuniga-Peez AU - B. Alloing AU - D. Havsko AU - F. Uherek AU - W. Wang AU - F. Causa AU - D. Allsopp TI - Nanopendeo coalescence overgrowth of GaN on etched nanorod array JF - Physica Status Solidi C JA - Phys. Status Solidi C J1 - PSSC VL - {7--8} SP - 2334 PY - 2011/01/01

Multi-channel terahertz grating spectrometer with quantum-cascade laser and microbolometer array

@article{ author = { R. Eichholz and H. Richter and S. G. Pavlov and M. Wienold and L. Schrottke and R. Hey and H.T. Grahn and H.-W. Hübers }, title = { Multi-channel terahertz grating spectrometer with quantum-cascade laser and microbolometer array }, journal = { Applied Physics Letters }, volume = { 99 }, year = { 2011 }, pages = { 141112 } }

TY - JOUR AU - R. Eichholz AU - H. Richter AU - S. G. Pavlov AU - M. Wienold AU - L. Schrottke AU - R. Hey AU - H.T. Grahn AU - H.-W. Hübers TI - Multi-channel terahertz grating spectrometer with quantum-cascade laser and microbolometer array JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 99 SP - 141112 PY - 2011/01/01

Monodisperse (In, Ga)N insertions in catalyst-free-grown GaN(0001) nanowires

@article{ author = { M. Knelangen and M. Hanke and E. Luna and L. Schrottke and O. Brandt and A. Trampert }, title = { Monodisperse (In, Ga)N insertions in catalyst-free-grown GaN(0001) nanowires }, journal = { Nanotechnology }, volume = { 22 }, year = { 2011 }, pages = { 365703 } }

TY - JOUR AU - M. Knelangen AU - M. Hanke AU - E. Luna AU - L. Schrottke AU - O. Brandt AU - A. Trampert TI - Monodisperse (In, Ga)N insertions in catalyst-free-grown GaN(0001) nanowires JF - Nanotechnology JA - Nanotechnology J1 - NAN VL - 22 SP - 365703 PY - 2011/01/01

Epitaxy of single crystal phase change materials on Si(111)

@article{ author = { P. Rodenbach and K. Perumal and F. Katmis and W. Braun and R. Calarco and H. Riechert }, title = { Epitaxy of single crystal phase change materials on Si(111) }, journal = { Proceedings of the Materials Research Society }, volume = { 1338 }, year = { 2011 }, pages = { {r05-10} } }

TY - JOUR AU - P. Rodenbach AU - K. Perumal AU - F. Katmis AU - W. Braun AU - R. Calarco AU - H. Riechert TI - Epitaxy of single crystal phase change materials on Si(111) JF - Proceedings of the Materials Research Society JA - Proc. MRS J1 - VL - 1338 SP - {r05-10} PY - 2011/01/01

Self-assisted nucleation and vapor solid growth of InAs nanowires on bare Si(111)

@article{ author = { E. Dimakis and J. Lähnemann and U. Jahn and S. Breuer and M. Hilse and L. Geelhaar and H. Riechert }, title = { Self-assisted nucleation and vapor solid growth of InAs nanowires on bare Si(111) }, journal = { Crystal Growth & Design }, volume = { 11 }, year = { 2011 }, pages = { 4001 } }

TY - JOUR AU - E. Dimakis AU - J. Lähnemann AU - U. Jahn AU - S. Breuer AU - M. Hilse AU - L. Geelhaar AU - H. Riechert TI - Self-assisted nucleation and vapor solid growth of InAs nanowires on bare Si(111) JF - Crystal Growth & Design JA - Cryst. Growth Des. J1 - VL - 11 SP - 4001 PY - 2011/01/01

Mid-infrared pump-related electric-field domains in GaAs/(Al,Ga)As quantum-cascade structures for terahertz lasing without population inversion

@article{ author = { M. Giehler and M. Wienold and L. Schrottke and R. Hey and H.T. Grahn and S. G. Pavlov and H.-W. Hübers and S. Winnerl and H. Schneider }, title = { Mid-infrared pump-related electric-field domains in GaAs/(Al,Ga)As quantum-cascade structures for terahertz lasing without population inversion }, journal = { Journal of Applied Physics }, volume = { 110 }, year = { 2011 }, pages = { 103104 } }

TY - JOUR AU - M. Giehler AU - M. Wienold AU - L. Schrottke AU - R. Hey AU - H.T. Grahn AU - S. G. Pavlov AU - H.-W. Hübers AU - S. Winnerl AU - H. Schneider TI - Mid-infrared pump-related electric-field domains in GaAs/(Al,Ga)As quantum-cascade structures for terahertz lasing without population inversion JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 110 SP - 103104 PY - 2011/01/01

Formation of high-quality GaN microcrystals by pendeoepitaxial overgrowth of GaN nanowires on Si(111) by molecular beam epitaxy

@article{ author = { P. Dogan and O. Brandt and C. Pfüller and J. Lähnemann and U. Jahn and C. Roder and A. Trampert and L. Geelhaar and H. Riechert }, title = { Formation of high-quality GaN microcrystals by pendeoepitaxial overgrowth of GaN nanowires on Si(111) by molecular beam epitaxy }, journal = { Crystal Growth & Design }, volume = { 11 }, year = { 2011 }, pages = { 4257 } }

TY - JOUR AU - P. Dogan AU - O. Brandt AU - C. Pfüller AU - J. Lähnemann AU - U. Jahn AU - C. Roder AU - A. Trampert AU - L. Geelhaar AU - H. Riechert TI - Formation of high-quality GaN microcrystals by pendeoepitaxial overgrowth of GaN nanowires on Si(111) by molecular beam epitaxy JF - Crystal Growth & Design JA - Cryst. Growth Des. J1 - VL - 11 SP - 4257 PY - 2011/01/01

Direct probing of Schottky barriers in Si nanowire Schottky barrier field effect transistors

@article{ author = { D. Martin and A. Heinzig and M. Grube and L. Geelhaar and T. Mikolajick and H. Riechert and W. M. Weber }, title = { Direct probing of Schottky barriers in Si nanowire Schottky barrier field effect transistors }, journal = { Physical Review Letters }, volume = { 107 }, year = { 2011 }, pages = { 216807 } }

TY - JOUR AU - D. Martin AU - A. Heinzig AU - M. Grube AU - L. Geelhaar AU - T. Mikolajick AU - H. Riechert AU - W. M. Weber TI - Direct probing of Schottky barriers in Si nanowire Schottky barrier field effect transistors JF - Physical Review Letters JA - Phys. Rev. Lett. J1 - PRL VL - 107 SP - 216807 PY - 2011/01/01

Point contact Andreev spectroscopy of epitaxial Co₂FeSi Heusler alloys on GaAs (001)

@article{ author = { H. Lehmann and J. M. Scholtyssek and C. Herrmann and J. Herfort and U. Merkt and G. Meier }, title = { Point contact Andreev spectroscopy of epitaxial Co₂FeSi Heusler alloys on GaAs (001) }, journal = { Journal of Applied Physics }, volume = { 110 }, year = { 2011 }, pages = { 063908 } }

TY - JOUR AU - H. Lehmann AU - J. M. Scholtyssek AU - C. Herrmann AU - J. Herfort AU - U. Merkt AU - G. Meier TI - Point contact Andreev spectroscopy of epitaxial Co₂FeSi Heusler alloys on GaAs (001) JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 110 SP - 063908 PY - 2011/01/01

High-field transport in an electron-hole plasma: Transition from ballistic to drift motion

@article{ author = { P. Bowlan and W. Kuehn and K. Reimann and M. Woerner and T. Elsaesser and R. Hey and C. Flytzanis }, title = { High-field transport in an electron-hole plasma: Transition from ballistic to drift motion }, journal = { Physical Review Letters }, volume = { 107 }, year = { 2011 }, pages = { 256602 } }

TY - JOUR AU - P. Bowlan AU - W. Kuehn AU - K. Reimann AU - M. Woerner AU - T. Elsaesser AU - R. Hey AU - C. Flytzanis TI - High-field transport in an electron-hole plasma: Transition from ballistic to drift motion JF - Physical Review Letters JA - Phys. Rev. Lett. J1 - PRL VL - 107 SP - 256602 PY - 2011/01/01

Zeeman splitting and spin dynamics tuning by exciton charging in two-dimensional systems

@article{ author = { L. K. Castelano and D. F. Cesar and V. Lopez-Richard and G. E. Marques and O. D. D. Couto Jr. and F. Iikawa and R. Hey and P. V. Santos }, title = { Zeeman splitting and spin dynamics tuning by exciton charging in two-dimensional systems }, journal = { Physical Review B: Solid State }, volume = { 84 }, year = { 2011 }, pages = { 205332 } }

TY - JOUR AU - L. K. Castelano AU - D. F. Cesar AU - V. Lopez-Richard AU - G. E. Marques AU - O. D. D. Couto Jr. AU - F. Iikawa AU - R. Hey AU - P. V. Santos TI - Zeeman splitting and spin dynamics tuning by exciton charging in two-dimensional systems JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 84 SP - 205332 PY - 2011/01/01

Evaluation of the In desorption during the capping process of diluted nitride In(Ga)As quantum dots

@article{ author = { D. F. Reyes and D. L. Sales and R. Gargallo-Caballero and J. M. Ulloa and A. Hierro and A. Guzman and R. Garcia and D. Gonzalez }, title = { Evaluation of the In desorption during the capping process of diluted nitride In(Ga)As quantum dots }, journal = { Journal of Physics: Conference Series }, volume = { 326 }, year = { 2011 }, pages = { 012049 } }

TY - JOUR AU - D. F. Reyes AU - D. L. Sales AU - R. Gargallo-Caballero AU - J. M. Ulloa AU - A. Hierro AU - A. Guzman AU - R. Garcia AU - D. Gonzalez TI - Evaluation of the In desorption during the capping process of diluted nitride In(Ga)As quantum dots JF - Journal of Physics: Conference Series JA - J. Phys.: Conf. Ser. J1 - VL - 326 SP - 012049 PY - 2011/01/01