Hall and Seebeck measurements estimate the thickness of a (buried) carrier system: Identifying interface electrons in In-doped SnO2 films

@article{ author = { A. Papadogianni and M.E. White and J.S.Speck and Z. Galazka and O. Bierwagen }, title = { Hall and Seebeck measurements estimate the thickness of a (buried) carrier system: Identifying interface electrons in In-doped SnO2 films }, journal = { Applied Physics Letters }, volume = { 107 }, year = { 2015 }, pages = { 252105 } }

TY - JOUR AU - A. Papadogianni AU - M.E. White AU - J.S.Speck AU - Z. Galazka AU - O. Bierwagen TI - Hall and Seebeck measurements estimate the thickness of a (buried) carrier system: Identifying interface electrons in In-doped SnO2 films JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 107 SP - 252105 PY - 2015/12/24

Landau-Zener Interference at Bichromatic Driving

@article{ author = { F. Forster and M. Mühlbacher and R. Blattmann and D. Schuh and W. Wegscheider and S. Ludwig and S. Kohler }, title = { Landau-Zener Interference at Bichromatic Driving }, journal = { Physical Review B: Solid State }, volume = { 92 }, year = { 2015 }, pages = { 245422 } }

TY - JOUR AU - F. Forster AU - M. Mühlbacher AU - R. Blattmann AU - D. Schuh AU - W. Wegscheider AU - S. Ludwig AU - S. Kohler TI - Landau-Zener Interference at Bichromatic Driving JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 92 SP - 245422 PY - 2015/12/15

Coincident-site lattice matching during van der Waals epitaxy

@article{ author = { J. E. Boschker and L. A. Galves and T. Flissikowski and J. M. J. Lopes and H. Riechert and R. Calarco }, title = { Coincident-site lattice matching during van der Waals epitaxy }, journal = { Scientific Reports }, volume = { 5 }, year = { 2015 }, pages = { 18079 } }

TY - JOUR AU - J. E. Boschker AU - L. A. Galves AU - T. Flissikowski AU - J. M. J. Lopes AU - H. Riechert AU - R. Calarco TI - Coincident-site lattice matching during van der Waals epitaxy JF - Scientific Reports JA - Sci. Rep. J1 - SREP VL - 5 SP - 18079 PY - 2015/12/14

Probing ultrafast spin dynamics with high-harmonic magnetic circular dichroism spectroscopy

@article{ author = { F.Willems and C.T.L.Smeenk and N.Zhavoronkov and O.Kornilov and I.Radu and M.Schmidbauer and M. Hanke and C.von Korff-Schmising and M.J.J.Vrakking and S.Eisebitt }, title = { Probing ultrafast spin dynamics with high-harmonic magnetic circular dichroism spectroscopy }, journal = { Physical Review B: Solid State }, volume = { 92 }, year = { 2015 }, pages = { 220405 } }

TY - JOUR AU - F.Willems AU - C.T.L.Smeenk AU - N.Zhavoronkov AU - O.Kornilov AU - I.Radu AU - M.Schmidbauer AU - M. Hanke AU - C.von Korff-Schmising AU - M.J.J.Vrakking AU - S.Eisebitt TI - Probing ultrafast spin dynamics with high-harmonic magnetic circular dichroism spectroscopy JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 92 SP - 220405 PY - 2015/12/07

Multistability and spin diffusion enhanced lifetimes in dynamic nuclear polarization in a double quantum dot

@article{ author = { F. Forster and M. Mühlbacher and D. Schuh and W. Wegscheider and S. Ludwig }, title = { Multistability and spin diffusion enhanced lifetimes in dynamic nuclear polarization in a double quantum dot }, journal = { Physical Review B: Solid State }, volume = { 92 }, year = { 2015 }, pages = { 245303 } }

TY - JOUR AU - F. Forster AU - M. Mühlbacher AU - D. Schuh AU - W. Wegscheider AU - S. Ludwig TI - Multistability and spin diffusion enhanced lifetimes in dynamic nuclear polarization in a double quantum dot JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 92 SP - 245303 PY - 2015/12/07

Chaos synchronization in networks of semiconductor superlattices

@article{ author = { W. Li and Y. Aviad and I. Reidler and H. Song and Y. Y. Huang and K. Biermann and M. Rosenbluh and Y. H. Zhang and H. T. Grahn and I. Kanter }, title = { Chaos synchronization in networks of semiconductor superlattices }, journal = { Europhysics Letters }, volume = { 112 }, year = { 2015 }, pages = { 30007 } }

TY - JOUR AU - W. Li AU - Y. Aviad AU - I. Reidler AU - H. Song AU - Y. Y. Huang AU - K. Biermann AU - M. Rosenbluh AU - Y. H. Zhang AU - H. T. Grahn AU - I. Kanter TI - Chaos synchronization in networks of semiconductor superlattices JF - Europhysics Letters JA - Europhys. Lett. J1 - EPL VL - 112 SP - 30007 PY - 2015/11/25

Giant Rashba-type Spin Splitting in Ferroelectric GeTe(111)

@article{ author = { M. Liebmann and C. Rinaldi and D. Di Sante and J. Kellner and C. Pauly and R. N. Wang and J. E. Boschker and A. Giussani and S. Bertoli and M. Cantoni and L. Baldrati and I. Vobornik and G. Panaccione and D. Marchenko and J. Sanchez-Barriga and O. Rader and R. Calarco and S. Picozzi and R. Bertacco and M. Morgenstern }, title = { Giant Rashba-type Spin Splitting in Ferroelectric GeTe(111) }, journal = { Advanced Materials }, volume = { 28 }, year = { 2015 }, pages = { 560 } }

TY - JOUR AU - M. Liebmann AU - C. Rinaldi AU - D. Di Sante AU - J. Kellner AU - C. Pauly AU - R. N. Wang AU - J. E. Boschker AU - A. Giussani AU - S. Bertoli AU - M. Cantoni AU - L. Baldrati AU - I. Vobornik AU - G. Panaccione AU - D. Marchenko AU - J. Sanchez-Barriga AU - O. Rader AU - R. Calarco AU - S. Picozzi AU - R. Bertacco AU - M. Morgenstern TI - Giant Rashba-type Spin Splitting in Ferroelectric GeTe(111) JF - Advanced Materials JA - Adv. Mater. J1 - VL - 28 SP - 560 PY - 2015/11/24

Frequency dependence of the maximum operating temperature for quantum-cascade lasers up to 5.4 THz

@article{ author = { M. Wienold and B. Röben and X. Lü and G. Rozas and L. Schrottke and K. Biermann and H. T. Grahn }, title = { Frequency dependence of the maximum operating temperature for quantum-cascade lasers up to 5.4 THz }, journal = { Applied Physics Letters }, volume = { 107 }, year = { 2015 }, pages = { 202101 } }

TY - JOUR AU - M. Wienold AU - B. Röben AU - X. Lü AU - G. Rozas AU - L. Schrottke AU - K. Biermann AU - H. T. Grahn TI - Frequency dependence of the maximum operating temperature for quantum-cascade lasers up to 5.4 THz JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 107 SP - 202101 PY - 2015/11/16

Fano-like resonances sustained by Si doped InAsSb plasmonic resonators integrated in GaSb matrix

@article{ author = { T. Taliercio and V. N. Guilengui and L. Cerutti and J.-B. Rodriguez and F. Barho and M.-J. M. Rodrigo and F. G.-P. Florès and E. Tournie and M. Niehle and A. Trampert }, title = { Fano-like resonances sustained by Si doped InAsSb plasmonic resonators integrated in GaSb matrix }, journal = { Optics Express }, volume = { 23 }, year = { 2015 }, pages = { 29423 } }

TY - JOUR AU - T. Taliercio AU - V. N. Guilengui AU - L. Cerutti AU - J.-B. Rodriguez AU - F. Barho AU - M.-J. M. Rodrigo AU - F. G.-P. Florès AU - E. Tournie AU - M. Niehle AU - A. Trampert TI - Fano-like resonances sustained by Si doped InAsSb plasmonic resonators integrated in GaSb matrix JF - Optics Express JA - Opt. Express J1 - VL - 23 SP - 29423 PY - 2015/11/03

Relation between the 0.7-Anomaly and the Kondo Effect: Geometric Crossover be- tween a Quantum Point Contact and a Kondo Quantum Dot

@article{ author = { J. Heyder and F. Bauer and E. Schubert and D. Borowsky and D. Schuh and W. Wegscheider and J. v. Delft and S. Ludwig }, title = { Relation between the 0.7-Anomaly and the Kondo Effect: Geometric Crossover be- tween a Quantum Point Contact and a Kondo Quantum Dot }, journal = { Physical Review B: Solid State }, volume = { 92 }, year = { 2015 }, pages = { 195401 } }

TY - JOUR AU - J. Heyder AU - F. Bauer AU - E. Schubert AU - D. Borowsky AU - D. Schuh AU - W. Wegscheider AU - J. v. Delft AU - S. Ludwig TI - Relation between the 0.7-Anomaly and the Kondo Effect: Geometric Crossover be- tween a Quantum Point Contact and a Kondo Quantum Dot JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 92 SP - 195401 PY - 2015/11/03

Cyclotron-resonance-assisted photocurrents in surface states of a three-dimensional topological insulator based on a strained high-mobility HgTe film

@article{ author = { K.-M. Dantscher and D. A. Kozlov and P. Olbrich and C. Zoth and P. Faltermeier and M. Lindner and G. V. Budkin and S. A. Tarasenko and V. V. Belkov and Z. D. Kvon and N. N. Mikhailov and S. A. Dvoretsky and D. Weiss and B. Jenichen and S. D. Ganichev }, title = { Cyclotron-resonance-assisted photocurrents in surface states of a three-dimensional topological insulator based on a strained high-mobility HgTe film }, journal = { Physical Review B: Solid State }, volume = { 92 }, year = { 2015 }, pages = { 165314 } }

TY - JOUR AU - K.-M. Dantscher AU - D. A. Kozlov AU - P. Olbrich AU - C. Zoth AU - P. Faltermeier AU - M. Lindner AU - G. V. Budkin AU - S. A. Tarasenko AU - V. V. Belkov AU - Z. D. Kvon AU - N. N. Mikhailov AU - S. A. Dvoretsky AU - D. Weiss AU - B. Jenichen AU - S. D. Ganichev TI - Cyclotron-resonance-assisted photocurrents in surface states of a three-dimensional topological insulator based on a strained high-mobility HgTe film JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 92 SP - 165314 PY - 2015/10/27

Interface formation of two- and three-dimensionally bonded materials in the case of GeTe-Sb2Te3 superlattices

@article{ author = { Jamo Momand and R. N. Wang and J. E. Boschker and M. A. Verheijen and R. Calarco and B. J. Kooi }, title = { Interface formation of two- and three-dimensionally bonded materials in the case of GeTe-Sb2Te3 superlattices }, journal = { Nanoscale }, volume = { 7 }, year = { 2015 }, pages = { 19136 } }

TY - JOUR AU - Jamo Momand AU - R. N. Wang AU - J. E. Boschker AU - M. A. Verheijen AU - R. Calarco AU - B. J. Kooi TI - Interface formation of two- and three-dimensionally bonded materials in the case of GeTe-Sb2Te3 superlattices JF - Nanoscale JA - Nanoscale J1 - 10.1039 VL - 7 SP - 19136 PY - 2015/10/26

Structure of Fe3Si/Al/Fe3Si thin film stacks on GaAs(001)

@article{ author = { B. Jenichen and U. Jahn and A. Nikulin and J. Herfort and H. Kirmse }, title = { Structure of Fe3Si/Al/Fe3Si thin film stacks on GaAs(001) }, journal = { Semiconductor Science and Technology }, volume = { 30 }, year = { 2015 }, pages = { 114005 } }

TY - JOUR AU - B. Jenichen AU - U. Jahn AU - A. Nikulin AU - J. Herfort AU - H. Kirmse TI - Structure of Fe3Si/Al/Fe3Si thin film stacks on GaAs(001) JF - Semiconductor Science and Technology JA - Semicond. Sci. Technol. J1 - SST VL - 30 SP - 114005 PY - 2015/10/15

Improved control over spontaneously formed GaN nanowires in molecular beam epitaxy using a two-step growth process

@article{ author = { J. K. Zettler and P. Corfdir and L. Geelhaar and H. Riechert and O. Brandt and S. Fernández-Garrido }, title = { Improved control over spontaneously formed GaN nanowires in molecular beam epitaxy using a two-step growth process }, journal = { Nanotechnology }, volume = { 26 }, year = { 2015 }, pages = { 445604 } }

TY - JOUR AU - J. K. Zettler AU - P. Corfdir AU - L. Geelhaar AU - H. Riechert AU - O. Brandt AU - S. Fernández-Garrido TI - Improved control over spontaneously formed GaN nanowires in molecular beam epitaxy using a two-step growth process JF - Nanotechnology JA - Nanotechnology J1 - NAN VL - 26 SP - 445604 PY - 2015/10/12

Detecting lateral composition modulation in dilute GaAsBi epilayers

@article{ author = { M. Wu and M. Hanke and E. Luna and J. Puustinen and M. Guina and A. Trampert }, title = { Detecting lateral composition modulation in dilute GaAsBi epilayers }, journal = { Nanotechnology }, volume = { 26 }, year = { 2015 }, pages = { 425701 } }

TY - JOUR AU - M. Wu AU - M. Hanke AU - E. Luna AU - J. Puustinen AU - M. Guina AU - A. Trampert TI - Detecting lateral composition modulation in dilute GaAsBi epilayers JF - Nanotechnology JA - Nanotechnology J1 - NAN VL - 26 SP - 425701 PY - 2015/09/30

Energy splitting of image states induced by the surface potential corrugation of InAs(111)A

@article{ author = { J. Martinez-Blanco and S.C, Erwin and K. Kanisawa and S. Fölsch }, title = { Energy splitting of image states induced by the surface potential corrugation of InAs(111)A }, journal = { Physical Review B: Solid State }, volume = { 92 }, year = { 2015 }, pages = { 115444 } }

TY - JOUR AU - J. Martinez-Blanco AU - S.C, Erwin AU - K. Kanisawa AU - S. Fölsch TI - Energy splitting of image states induced by the surface potential corrugation of InAs(111)A JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 92 SP - 115444 PY - 2015/09/28

Characterization of the internal properties of InGaN/GaN core–shell LEDs

@article{ author = { J. Ledig and X. Wang and S. Fündling and H. Schuhmann and M. Seibt and U. Jahn and H.-H. Wehmann and A. Waag }, title = { Characterization of the internal properties of InGaN/GaN core–shell LEDs }, journal = { Physica Status Solidi A }, volume = { 213 }, year = { 2015 }, pages = { 11 } }

TY - JOUR AU - J. Ledig AU - X. Wang AU - S. Fündling AU - H. Schuhmann AU - M. Seibt AU - U. Jahn AU - H.-H. Wehmann AU - A. Waag TI - Characterization of the internal properties of InGaN/GaN core–shell LEDs JF - Physica Status Solidi A JA - Phys. Status Solidi A J1 - PSSA VL - 213 SP - 11 PY - 2015/09/23

Electrical Conductivity and Gas-sensing Properties of Mg-doped and Undoped Single-crystalline In2O3 Thin Films: Bulk vs. Surface

@article{ author = { J. Rombach and O. Bierwagen and A. Papadogianni and M. Mischo and V. Cimalla and T. Berthold and S. Krischok and M. Himmerlich }, title = { Electrical Conductivity and Gas-sensing Properties of Mg-doped and Undoped Single-crystalline In2O3 Thin Films: Bulk vs. Surface }, journal = { Procedia Engineering }, volume = { 120 }, year = { 2015 }, pages = { 79 } }

TY - JOUR AU - J. Rombach AU - O. Bierwagen AU - A. Papadogianni AU - M. Mischo AU - V. Cimalla AU - T. Berthold AU - S. Krischok AU - M. Himmerlich TI - Electrical Conductivity and Gas-sensing Properties of Mg-doped and Undoped Single-crystalline In2O3 Thin Films: Bulk vs. Surface JF - Procedia Engineering JA - Procedia Eng. J1 - VL - 120 SP - 79 PY - 2015/09/16

Epitaxial Sb-doped SnO2 and Sn-doped In2O3 transparent conducting oxide contacts on GaN-based light emitting diodes

@article{ author = { M.Y. Tsai and O. Bierwagen and J.S. Speck }, title = { Epitaxial Sb-doped SnO2 and Sn-doped In2O3 transparent conducting oxide contacts on GaN-based light emitting diodes }, journal = { Thin Solid Films }, volume = { 605 }, year = { 2015 }, pages = { 186 } }

TY - JOUR AU - M.Y. Tsai AU - O. Bierwagen AU - J.S. Speck TI - Epitaxial Sb-doped SnO2 and Sn-doped In2O3 transparent conducting oxide contacts on GaN-based light emitting diodes JF - Thin Solid Films JA - Thin Solid Films J1 - TSF VL - 605 SP - 186 PY - 2015/09/16

Integration of GaN crystals on micro-patterned Si(0 0 1) substrates by plasma-assisted molecular beam epitaxy

@article{ author = { F. Isa and C. Chèze and M. Siekacz and C. Hauswald and J. Lähnemann and S. Fernández-Garrido and T. Kreilinger and M. Ramsteiner and Y. A. Rojas Dasilva and O. Brandt and G. Isella and R. Erni and R. Calarco and H. Riechert and L. Miglio }, title = { Integration of GaN crystals on micro-patterned Si(0 0 1) substrates by plasma-assisted molecular beam epitaxy }, journal = { Crystal Growth & Design }, volume = { 15 }, year = { 2015 }, pages = { 4886 } }

TY - JOUR AU - F. Isa AU - C. Chèze AU - M. Siekacz AU - C. Hauswald AU - J. Lähnemann AU - S. Fernández-Garrido AU - T. Kreilinger AU - M. Ramsteiner AU - Y. A. Rojas Dasilva AU - O. Brandt AU - G. Isella AU - R. Erni AU - R. Calarco AU - H. Riechert AU - L. Miglio TI - Integration of GaN crystals on micro-patterned Si(0 0 1) substrates by plasma-assisted molecular beam epitaxy JF - Crystal Growth & Design JA - Cryst. Growth Des. J1 - VL - 15 SP - 4886 PY - 2015/09/14

Electronic properties of polar and semi-polar dot-in-a-well heterostructures

@article{ author = { S. Schulz and O. Marquardt }, title = { Electronic properties of polar and semi-polar dot-in-a-well heterostructures }, journal = { IEEE }, volume = { IEEE IEEE Catalog Nr. CFP15817-PRT }, year = { 2015 }, pages = { 21 } }

TY - JOUR AU - S. Schulz AU - O. Marquardt TI - Electronic properties of polar and semi-polar dot-in-a-well heterostructures JF - IEEE JA - IEEE J1 - VL - IEEE IEEE Catalog Nr. CFP15817-PRT SP - 21 PY - 2015/09/07

Impact of individual dopants on the electronic properties of axial (In,Ga)N/GaN nanowire heterostructures

@article{ author = { O. Marquardt and L. Geelhaar and O. Brandt }, title = { Impact of individual dopants on the electronic properties of axial (In,Ga)N/GaN nanowire heterostructures }, journal = { IEEE }, volume = { IEEE Catalog Nr. CFP15817-PRT }, year = { 2015 }, pages = { 113 } }

TY - JOUR AU - O. Marquardt AU - L. Geelhaar AU - O. Brandt TI - Impact of individual dopants on the electronic properties of axial (In,Ga)N/GaN nanowire heterostructures JF - IEEE JA - IEEE J1 - VL - IEEE Catalog Nr. CFP15817-PRT SP - 113 PY - 2015/09/07

Quantitative evaluation of the broadening of x-ray diffraction, Raman, and photoluminescence lines by dislocation-induced strain in heteroepitaxial GaN films

@article{ author = { V. M. Kaganer and B. Jenichen and M. Ramsteiner and U. Jahn and C. Hauswald and F. Grosse and S. Fernández-Garrido and O. Brandt }, title = { Quantitative evaluation of the broadening of x-ray diffraction, Raman, and photoluminescence lines by dislocation-induced strain in heteroepitaxial GaN films }, journal = { Journal of Physics D: Applied Physics }, volume = { 48 }, year = { 2015 }, pages = { 385105 } }

TY - JOUR AU - V. M. Kaganer AU - B. Jenichen AU - M. Ramsteiner AU - U. Jahn AU - C. Hauswald AU - F. Grosse AU - S. Fernández-Garrido AU - O. Brandt TI - Quantitative evaluation of the broadening of x-ray diffraction, Raman, and photoluminescence lines by dislocation-induced strain in heteroepitaxial GaN films JF - Journal of Physics D: Applied Physics JA - J. Phys. D: Appl. Phys. J1 - JPD VL - 48 SP - 385105 PY - 2015/09/02

Optically induced strong intermodal coupling in mechanical resonators at room temperature

@article{ author = { R. Ohta and H. Okamoto and R. Hey and K. J. Friedland and H. Yamaguchi }, title = { Optically induced strong intermodal coupling in mechanical resonators at room temperature }, journal = { Applied Physics Letters }, volume = { 107 }, year = { 2015 }, pages = { 091906 } }

TY - JOUR AU - R. Ohta AU - H. Okamoto AU - R. Hey AU - K. J. Friedland AU - H. Yamaguchi TI - Optically induced strong intermodal coupling in mechanical resonators at room temperature JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 107 SP - 091906 PY - 2015/09/02

The impact of substrate selection for the controlled growth of graphene by molecular beam epitaxy

@article{ author = { T. Schumann and J. M. J. Lopes and J. M. Wofford and M.H. Oliveira Jr. and M. Dubslaff and M. Hanke and U. Jahn and L. Geelhaar and H. Riechert }, title = { The impact of substrate selection for the controlled growth of graphene by molecular beam epitaxy }, journal = { Journal of Crystal Growth }, volume = { 425 }, year = { 2015 }, pages = { 274 } }

TY - JOUR AU - T. Schumann AU - J. M. J. Lopes AU - J. M. Wofford AU - M.H. Oliveira Jr. AU - M. Dubslaff AU - M. Hanke AU - U. Jahn AU - L. Geelhaar AU - H. Riechert TI - The impact of substrate selection for the controlled growth of graphene by molecular beam epitaxy JF - Journal of Crystal Growth JA - J. Cryst. Growth J1 - JGC VL - 425 SP - 274 PY - 2015/09/01

In-plane sixfold symmetry for α-Fe(110) on GaN{0001}: Measurement of the cubic anisotropy constant K3 of Fe

@article{ author = { C. Gao and C. Dong and C. Jia and D. Xue and J. Herfort and O. Brandt }, title = { In-plane sixfold symmetry for α-Fe(110) on GaN{0001}: Measurement of the cubic anisotropy constant K3 of Fe }, journal = { Physical Review B: Solid State }, volume = { 92 }, year = { 2015 }, pages = { 094404 } }

TY - JOUR AU - C. Gao AU - C. Dong AU - C. Jia AU - D. Xue AU - J. Herfort AU - O. Brandt TI - In-plane sixfold symmetry for α-Fe(110) on GaN{0001}: Measurement of the cubic anisotropy constant K3 of Fe JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 92 SP - 094404 PY - 2015/09/01

Computing Equilibrium Shapes of Wurtzite Crystals: The Example of GaN

@article{ author = { H. Li and L. Geelhaar and H. Riechert and C. Draxl }, title = { Computing Equilibrium Shapes of Wurtzite Crystals: The Example of GaN }, journal = { Physical Review Letters }, volume = { 115 }, year = { 2015 }, pages = { 085503 } }

TY - JOUR AU - H. Li AU - L. Geelhaar AU - H. Riechert AU - C. Draxl TI - Computing Equilibrium Shapes of Wurtzite Crystals: The Example of GaN JF - Physical Review Letters JA - Phys. Rev. Lett. J1 - PRL VL - 115 SP - 085503 PY - 2015/08/21

Nonresonant Coherent Control—Intersubband Excitations Manipulated by a Nonresonant Terahertz Pulse

@article{ author = { Giulia Folpini and Drew Morrill and Carmine Somma and K. Reimann and M. Woerner and T. Elsaesser and K. Biermann }, title = { Nonresonant Coherent Control—Intersubband Excitations Manipulated by a Nonresonant Terahertz Pulse }, journal = { Physical Review B: Solid State }, volume = { 92 }, year = { 2015 }, pages = { 085306 } }

TY - JOUR AU - Giulia Folpini AU - Drew Morrill AU - Carmine Somma AU - K. Reimann AU - M. Woerner AU - T. Elsaesser AU - K. Biermann TI - Nonresonant Coherent Control—Intersubband Excitations Manipulated by a Nonresonant Terahertz Pulse JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 92 SP - 085306 PY - 2015/08/17

Reconfigurable quantum-dot molecules created by atom manipulation

@article{ author = { Y. Pan and J. Yang and S. C. Erwin and K. Kanisawa and S. Fölsch }, title = { Reconfigurable quantum-dot molecules created by atom manipulation }, journal = { Physical Review Letters }, volume = { 115 }, year = { 2015 }, pages = { 076803 } }

TY - JOUR AU - Y. Pan AU - J. Yang AU - S. C. Erwin AU - K. Kanisawa AU - S. Fölsch TI - Reconfigurable quantum-dot molecules created by atom manipulation JF - Physical Review Letters JA - Phys. Rev. Lett. J1 - PRL VL - 115 SP - 076803 PY - 2015/08/14

Perovskite Sr-doped LaCrO3 as a new p-type transparent conducting oxide

@article{ author = { K. H. L. Zhang and Y. Du and A. Papadogianni and O. Bierwagen and S. Sallis and L. F. J. Piper and M. E. Bowden and V. Shutthanandan and P. V. Sushko and S. A. Chambers }, title = { Perovskite Sr-doped LaCrO3 as a new p-type transparent conducting oxide }, journal = { Advanced Materials }, volume = { 27 }, year = { 2015 }, pages = { 5191 } }

TY - JOUR AU - K. H. L. Zhang AU - Y. Du AU - A. Papadogianni AU - O. Bierwagen AU - S. Sallis AU - L. F. J. Piper AU - M. E. Bowden AU - V. Shutthanandan AU - P. V. Sushko AU - S. A. Chambers TI - Perovskite Sr-doped LaCrO3 as a new p-type transparent conducting oxide JF - Advanced Materials JA - Adv. Mater. J1 - VL - 27 SP - 5191 PY - 2015/08/06

Strong reflection and periodic resonant transmission of helical edge states in topological-insulator stub-like resonators

@article{ author = { Y. Takagaki }, title = { Strong reflection and periodic resonant transmission of helical edge states in topological-insulator stub-like resonators }, journal = { Journal of Applied Physics }, volume = { 118 }, year = { 2015 }, pages = { 054304 } }

TY - JOUR AU - Y. Takagaki TI - Strong reflection and periodic resonant transmission of helical edge states in topological-insulator stub-like resonators JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 118 SP - 054304 PY - 2015/08/05

Acoustically driven arrayed waveguide grating

@article{ author = { A. Crespo-Poveda and A. Hernández-Mínguez and B. Gargallo and K. Biermann and A. Tahraoui and P. V. Santos and P. Muñoz and A. Cantarero and M. M. de Lima, Jr. }, title = { Acoustically driven arrayed waveguide grating }, journal = { Optics Express }, volume = { 23 }, year = { 2015 }, pages = { 21213 } }

TY - JOUR AU - A. Crespo-Poveda AU - A. Hernández-Mínguez AU - B. Gargallo AU - K. Biermann AU - A. Tahraoui AU - P. V. Santos AU - P. Muñoz AU - A. Cantarero AU - M. M. de Lima, Jr. TI - Acoustically driven arrayed waveguide grating JF - Optics Express JA - Opt. Express J1 - VL - 23 SP - 21213 PY - 2015/08/05

Gating a single-molecule transistor with individual atoms

@article{ author = { J. Martinez-Blanco and C. Nacci and S.C. Erwin and K. Kanisawa and E. Locane and M. Thomas and F. von Oppen and P.W. Brouwer and S. Fölsch }, title = { Gating a single-molecule transistor with individual atoms }, journal = { Nature Physics }, volume = { 11 }, year = { 2015 }, pages = { 640 } }

TY - JOUR AU - J. Martinez-Blanco AU - C. Nacci AU - S.C. Erwin AU - K. Kanisawa AU - E. Locane AU - M. Thomas AU - F. von Oppen AU - P.W. Brouwer AU - S. Fölsch TI - Gating a single-molecule transistor with individual atoms JF - Nature Physics JA - Nat. Phys. J1 - VL - 11 SP - 640 PY - 2015/07/31

Facetted growth of Fe3Si shells around GaAs nanowires on Si(111)

@article{ author = { B. Jenichen and M. Hilse and J. Herfort and A. Trampert }, title = { Facetted growth of Fe3Si shells around GaAs nanowires on Si(111) }, journal = { Journal of Crystal Growth }, volume = { 427 }, year = { 2015 }, pages = { 21 } }

TY - JOUR AU - B. Jenichen AU - M. Hilse AU - J. Herfort AU - A. Trampert TI - Facetted growth of Fe3Si shells around GaAs nanowires on Si(111) JF - Journal of Crystal Growth JA - J. Cryst. Growth J1 - JGC VL - 427 SP - 21 PY - 2015/07/24

Synthesis of quasi-free-standing bilayer graphene nanoribbons on SiC surfaces

@article{ author = { M.H. Oliveira Jr. and J. M. J. Lopes and T. Schumann and L. A. Galves and M. Ramsteiner and K. Berlin and A. Trampert and H. Riechert }, title = { Synthesis of quasi-free-standing bilayer graphene nanoribbons on SiC surfaces }, journal = { Nature Communications }, volume = { 6 }, year = { 2015 }, pages = { 7632 } }

TY - JOUR AU - M.H. Oliveira Jr. AU - J. M. J. Lopes AU - T. Schumann AU - L. A. Galves AU - M. Ramsteiner AU - K. Berlin AU - A. Trampert AU - H. Riechert TI - Synthesis of quasi-free-standing bilayer graphene nanoribbons on SiC surfaces JF - Nature Communications JA - Nat. Commun. J1 - VL - 6 SP - 7632 PY - 2015/07/09

4.7-THz Local Oscillator for the GREAT Heterodyne Spectrometer on SOFIA

@article{ author = { H. Richter and M. Wienold and L. Schrottke and K. Biermann and H. T. Grahn and H.-W. Hübers }, title = { 4.7-THz Local Oscillator for the GREAT Heterodyne Spectrometer on SOFIA }, journal = { IEEE Transactions on Terahertz Science and Technology }, volume = { 5 }, year = { 2015 }, pages = { 539 } }

TY - JOUR AU - H. Richter AU - M. Wienold AU - L. Schrottke AU - K. Biermann AU - H. T. Grahn AU - H.-W. Hübers TI - 4.7-THz Local Oscillator for the GREAT Heterodyne Spectrometer on SOFIA JF - IEEE Transactions on Terahertz Science and Technology JA - IEEE Trans. Terahertz Sci. Technol. J1 - VL - 5 SP - 539 PY - 2015/07/08

Te-doping of self-catalyzed GaAs nanowires

@article{ author = { S. Suomalainen and T.V. Hakkarainen and T. Salminen and R. Koskinen and M. Honkanen and E. Luna and M. Guina }, title = { Te-doping of self-catalyzed GaAs nanowires }, journal = { Applied Physics Letters }, volume = { 107 }, year = { 2015 }, pages = { 012101 } }

TY - JOUR AU - S. Suomalainen AU - T.V. Hakkarainen AU - T. Salminen AU - R. Koskinen AU - M. Honkanen AU - E. Luna AU - M. Guina TI - Te-doping of self-catalyzed GaAs nanowires JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 107 SP - 012101 PY - 2015/07/06

Semiconductor Microfabrication and Ultraprecise Quantum Dots by Atom Manipulation [II]: Semiconductor Quantum Structure with Exact Fidelity

@article{ author = { K. Kanisawa and S. Fölsch }, title = { Semiconductor Microfabrication and Ultraprecise Quantum Dots by Atom Manipulation [II]: Semiconductor Quantum Structure with Exact Fidelity }, journal = { Journal of the Institute of Electronics Information and Communication Engineers }, volume = { 98 }, year = { 2015 }, pages = { 590 } }

TY - JOUR AU - K. Kanisawa AU - S. Fölsch TI - Semiconductor Microfabrication and Ultraprecise Quantum Dots by Atom Manipulation [II]: Semiconductor Quantum Structure with Exact Fidelity JF - Journal of the Institute of Electronics Information and Communication Engineers JA - IEICE J1 - VL - 98 SP - 590 PY - 2015/07/01

Electronic structure of polar and semi-polar (11-22) nitride-based dot-in-a-well systems

@article{ author = { S. Schulz and O. Marquardt }, title = { Electronic structure of polar and semi-polar (11-22) nitride-based dot-in-a-well systems }, journal = { Physical Review Applied }, volume = { 3 }, year = { 2015 }, pages = { 064020 } }

TY - JOUR AU - S. Schulz AU - O. Marquardt TI - Electronic structure of polar and semi-polar (11-22) nitride-based dot-in-a-well systems JF - Physical Review Applied JA - Phys. Rev. Appl. J1 - VL - 3 SP - 064020 PY - 2015/06/30

High-temperature growth of GaN nanowires by molecular beam epitaxy: toward the material quality of bulk GaN

@article{ author = { J. K. Zettler and C. Hauswald and P. Corfdir and M. Musolino and L. Geelhaar and H. Riechert and O. Brandt and S. Fernández-Garrido }, title = { High-temperature growth of GaN nanowires by molecular beam epitaxy: toward the material quality of bulk GaN }, journal = { Crystal Growth & Design }, volume = { 15 }, year = { 2015 }, pages = { 4104 } }

TY - JOUR AU - J. K. Zettler AU - C. Hauswald AU - P. Corfdir AU - M. Musolino AU - L. Geelhaar AU - H. Riechert AU - O. Brandt AU - S. Fernández-Garrido TI - High-temperature growth of GaN nanowires by molecular beam epitaxy: toward the material quality of bulk GaN JF - Crystal Growth & Design JA - Cryst. Growth Des. J1 - VL - 15 SP - 4104 PY - 2015/06/29

Impact of random dopant fluctuations on the electronic properties of InxGa1-xN/GaN axial nanowire heterostructures

@article{ author = { O. Marquardt and L. Geelhaar and O. Brandt }, title = { Impact of random dopant fluctuations on the electronic properties of InxGa1-xN/GaN axial nanowire heterostructures }, journal = { Nano Letters }, volume = { 15 }, year = { 2015 }, pages = { 4289 } }

TY - JOUR AU - O. Marquardt AU - L. Geelhaar AU - O. Brandt TI - Impact of random dopant fluctuations on the electronic properties of InxGa1-xN/GaN axial nanowire heterostructures JF - Nano Letters JA - Nano Lett. J1 - VL - 15 SP - 4289 PY - 2015/06/09

Light emission from Ag(111) driven by inelastic tunneling in the field emission regime

@article{ author = { J. Martinez-Blanco and S. Fölsch }, title = { Light emission from Ag(111) driven by inelastic tunneling in the field emission regime }, journal = { Journal of Physics: Condensed Matter }, volume = { 27 }, year = { 2015 }, pages = { 255008 } }

TY - JOUR AU - J. Martinez-Blanco AU - S. Fölsch TI - Light emission from Ag(111) driven by inelastic tunneling in the field emission regime JF - Journal of Physics: Condensed Matter JA - J. Phys.: Condens. Matter J1 - JPCM VL - 27 SP - 255008 PY - 2015/06/05

Electronic properties of axial InxGa1-xN insertions in GaN nanowires

@article{ author = { O. Marquardt and L. Geelhaar and O. Brandt }, title = { Electronic properties of axial InxGa1-xN insertions in GaN nanowires }, journal = { Journal of Computational Electronics }, volume = { 14 }, year = { 2015 }, pages = { 464 } }

TY - JOUR AU - O. Marquardt AU - L. Geelhaar AU - O. Brandt TI - Electronic properties of axial InxGa1-xN insertions in GaN nanowires JF - Journal of Computational Electronics JA - J. Comput. Electron. J1 - VL - 14 SP - 464 PY - 2015/06/01

Semiconductor Microfabrication and Ultraprecise Quantum Dots by Atom Manipulation [I]: Extreme High Precision Lithography

@article{ author = { K. Kanisawa and S. Fölsch }, title = { Semiconductor Microfabrication and Ultraprecise Quantum Dots by Atom Manipulation [I]: Extreme High Precision Lithography }, journal = { Journal of the Institute of Electronics Information and Communication Engineers }, volume = { 98 }, year = { 2015 }, pages = { 500 } }

TY - JOUR AU - K. Kanisawa AU - S. Fölsch TI - Semiconductor Microfabrication and Ultraprecise Quantum Dots by Atom Manipulation [I]: Extreme High Precision Lithography JF - Journal of the Institute of Electronics Information and Communication Engineers JA - IEICE J1 - VL - 98 SP - 500 PY - 2015/06/01

Epitaxial growth of GaN nanowires with high structural perfection on a metallic TiN film

@article{ author = { M. Wölz and C. Hauswald and T. Flissikowski and T. Gotschke and S. Fernández-Garrido and O. Brandt and H. T. Grahn and L. Geelhaar and H. Riechert }, title = { Epitaxial growth of GaN nanowires with high structural perfection on a metallic TiN film }, journal = { Nano Letters }, volume = { 15 }, year = { 2015 }, pages = { 3743 } }

TY - JOUR AU - M. Wölz AU - C. Hauswald AU - T. Flissikowski AU - T. Gotschke AU - S. Fernández-Garrido AU - O. Brandt AU - H. T. Grahn AU - L. Geelhaar AU - H. Riechert TI - Epitaxial growth of GaN nanowires with high structural perfection on a metallic TiN film JF - Nano Letters JA - Nano Lett. J1 - VL - 15 SP - 3743 PY - 2015/05/29

Synthesis of atomically thin hexagonal boron nitride films on nickel foils by molecular beam epitaxy

@article{ author = { S. Nakhaie and J. M. Wofford and T. Schumann and U. Jahn and M. Ramsteiner and M. Hanke and J. M. J. Lopes and H. Riechert }, title = { Synthesis of atomically thin hexagonal boron nitride films on nickel foils by molecular beam epitaxy }, journal = { Applied Physics Letters }, volume = { 106 }, year = { 2015 }, pages = { 213108 } }

TY - JOUR AU - S. Nakhaie AU - J. M. Wofford AU - T. Schumann AU - U. Jahn AU - M. Ramsteiner AU - M. Hanke AU - J. M. J. Lopes AU - H. Riechert TI - Synthesis of atomically thin hexagonal boron nitride films on nickel foils by molecular beam epitaxy JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 106 SP - 213108 PY - 2015/05/27

Interface structure and strain state of InAs nano-clusters embedded in silicon

@article{ author = { M. Wu and A. Trampert and T. Al-Zoubi and M. Benyoucef and J. P. Reithmaier }, title = { Interface structure and strain state of InAs nano-clusters embedded in silicon }, journal = { Acta Materialia }, volume = { 90 }, year = { 2015 }, pages = { 133 } }

TY - JOUR AU - M. Wu AU - A. Trampert AU - T. Al-Zoubi AU - M. Benyoucef AU - J. P. Reithmaier TI - Interface structure and strain state of InAs nano-clusters embedded in silicon JF - Acta Materialia JA - Acta Mat. J1 - VL - 90 SP - 133 PY - 2015/05/15

Perpendicular magnetic anisotropy in the Heusler alloy Co2TiSi/GaAs(001) hybrid structure

@article{ author = { M. T. Dau and B. Jenichen and J. Herfort }, title = { Perpendicular magnetic anisotropy in the Heusler alloy Co2TiSi/GaAs(001) hybrid structure }, journal = { AIP Advances }, volume = { 5 }, year = { 2015 }, pages = { 057130 } }

TY - JOUR AU - M. T. Dau AU - B. Jenichen AU - J. Herfort TI - Perpendicular magnetic anisotropy in the Heusler alloy Co2TiSi/GaAs(001) hybrid structure JF - AIP Advances JA - AIP Adv. J1 - VL - 5 SP - 057130 PY - 2015/05/13

Spontaneous formation of nanostructures by surface spinodal decomposition in GaAs1-xBix epilayers

@article{ author = { E. Luna and M.Wu and J. Puustinen and M. Guina and A. Trampert }, title = { Spontaneous formation of nanostructures by surface spinodal decomposition in GaAs1-xBix epilayers }, journal = { Journal of Applied Physics }, volume = { 117 }, year = { 2015 }, pages = { 185302 } }

TY - JOUR AU - E. Luna AU - M.Wu AU - J. Puustinen AU - M. Guina AU - A. Trampert TI - Spontaneous formation of nanostructures by surface spinodal decomposition in GaAs1-xBix epilayers JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 117 SP - 185302 PY - 2015/05/08

Fourier transform-based scattering-rate method for self-consistent simulations of carrier transport in semiconductor heterostructures

@article{ author = { L. Schrottke and X. Lü and H. T. Grahn }, title = { Fourier transform-based scattering-rate method for self-consistent simulations of carrier transport in semiconductor heterostructures }, journal = { Journal of Applied Physics }, volume = { 117 }, year = { 2015 }, pages = { 154309 } }

TY - JOUR AU - L. Schrottke AU - X. Lü AU - H. T. Grahn TI - Fourier transform-based scattering-rate method for self-consistent simulations of carrier transport in semiconductor heterostructures JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 117 SP - 154309 PY - 2015/04/21

Controlled Pore Formation on Mesoporous Single Crystalline Silicon Nanowires: Threshold and Mechanisms

@article{ author = { Stefan Weidemann and Maximilian Kockert and Dirk Wallacher and M. Ramsteiner and Anna Mogilatenko and Klaus Rademann and Saskia F. Fischer }, title = { Controlled Pore Formation on Mesoporous Single Crystalline Silicon Nanowires: Threshold and Mechanisms }, journal = { Journal of Nanomaterials }, volume = { 2015 }, year = { 2015 }, pages = { 672305 } }

TY - JOUR AU - Stefan Weidemann AU - Maximilian Kockert AU - Dirk Wallacher AU - M. Ramsteiner AU - Anna Mogilatenko AU - Klaus Rademann AU - Saskia F. Fischer TI - Controlled Pore Formation on Mesoporous Single Crystalline Silicon Nanowires: Threshold and Mechanisms JF - Journal of Nanomaterials JA - J1 - VL - 2015 SP - 672305 PY - 2015/04/16

III-V semiconductor nanowires: nitrides (N-based; III-N)

@article{ author = { P. Dogan and C. Chèze and R. Calarco }, title = { III-V semiconductor nanowires: nitrides (N-based; III-N) }, journal = { Woodhead Publishing }, volume = { 4 }, year = { 2015 }, pages = { 125 } }

TY - JOUR AU - P. Dogan AU - C. Chèze AU - R. Calarco TI - III-V semiconductor nanowires: nitrides (N-based; III-N) JF - Woodhead Publishing JA - Woodhead J1 - VL - 4 SP - 125 PY - 2015/04/02

Electron tomography on nanopores embedded in epitaxial GaSb thin films

@article{ author = { M. Niehle and A. Trampert }, title = { Electron tomography on nanopores embedded in epitaxial GaSb thin films }, journal = { Micron }, volume = { 73 }, year = { 2015 }, pages = { 54 } }

TY - JOUR AU - M. Niehle AU - A. Trampert TI - Electron tomography on nanopores embedded in epitaxial GaSb thin films JF - Micron JA - Micron J1 - VL - 73 SP - 54 PY - 2015/04/01

Local structure of epitaxial GeTe and Ge2Sb2Te5 films grown on InAs and Si substrates with (100) and (111) orientations: a XANES study

@article{ author = { A.V. Kolobov and P. Fons and M. Krbal and J. Tominaga and A. Giussani and K. Perumal and H. Riechert and R. Calarco and T. Uruga }, title = { Local structure of epitaxial GeTe and Ge2Sb2Te5 films grown on InAs and Si substrates with (100) and (111) orientations: a XANES study }, journal = { Journal of Applied Physics }, volume = { 117 }, year = { 2015 }, pages = { 125308 } }

TY - JOUR AU - A.V. Kolobov AU - P. Fons AU - M. Krbal AU - J. Tominaga AU - A. Giussani AU - K. Perumal AU - H. Riechert AU - R. Calarco AU - T. Uruga TI - Local structure of epitaxial GeTe and Ge2Sb2Te5 films grown on InAs and Si substrates with (100) and (111) orientations: a XANES study JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 117 SP - 125308 PY - 2015/03/31

Step-bunched Bi2Te3 and Bi2Se3 layers epitaxially grown on high-index InP substrates

@article{ author = { Y. Takagaki and A. Papadogianni and B. Jenichen and U. Jahn and O. Bierwagen }, title = { Step-bunched Bi2Te3 and Bi2Se3 layers epitaxially grown on high-index InP substrates }, journal = { Thin Solid Films }, volume = { 580 }, year = { 2015 }, pages = { 89 } }

TY - JOUR AU - Y. Takagaki AU - A. Papadogianni AU - B. Jenichen AU - U. Jahn AU - O. Bierwagen TI - Step-bunched Bi2Te3 and Bi2Se3 layers epitaxially grown on high-index InP substrates JF - Thin Solid Films JA - Thin Solid Films J1 - TSF VL - 580 SP - 89 PY - 2015/03/30

Importance of the dielectric contrast for the polarization of excitonic transitions in single GaN nanowires

@article{ author = { P. Corfdir and F. Feix and J. K. Zettler and S. Fernández-Garrido and O. Brandt }, title = { Importance of the dielectric contrast for the polarization of excitonic transitions in single GaN nanowires }, journal = { New Journal Physics }, volume = { 17 }, year = { 2015 }, pages = { 033040 } }

TY - JOUR AU - P. Corfdir AU - F. Feix AU - J. K. Zettler AU - S. Fernández-Garrido AU - O. Brandt TI - Importance of the dielectric contrast for the polarization of excitonic transitions in single GaN nanowires JF - New Journal Physics JA - New J. Phys. J1 - VL - 17 SP - 033040 PY - 2015/03/27

Atomistic description of wave function localization effects in In(x)Ga(1-x)N alloys and quantum wells

@article{ author = { S. Schulz and O. Marquardt and C. Coughlan and M. A. Caro and L. Geelhaar and O. Brandt and E. P. O'Reilly }, title = { Atomistic description of wave function localization effects in In(x)Ga(1-x)N alloys and quantum wells }, journal = { Proceedings of SPIE }, volume = { 9357 }, year = { 2015 }, pages = { } }

TY - JOUR AU - S. Schulz AU - O. Marquardt AU - C. Coughlan AU - M. A. Caro AU - L. Geelhaar AU - O. Brandt AU - E. P. O'Reilly TI - Atomistic description of wave function localization effects in In(x)Ga(1-x)N alloys and quantum wells JF - Proceedings of SPIE JA - Proc. SPIE J1 - VL - 9357 SP - PY - 2015/03/16

Seebeck effect and giant linear magnetoresistance affected by conflicting n- and p-type defects-induced doping in epitaxial Bi2Te3 layers

@article{ author = { Y. Takagaki and A. Papadogianni and O. Bierwagen }, title = { Seebeck effect and giant linear magnetoresistance affected by conflicting n- and p-type defects-induced doping in epitaxial Bi2Te3 layers }, journal = { Advanced Electronic Materials }, volume = { 1 }, year = { 2015 }, pages = { 1400007 } }

TY - JOUR AU - Y. Takagaki AU - A. Papadogianni AU - O. Bierwagen TI - Seebeck effect and giant linear magnetoresistance affected by conflicting n- and p-type defects-induced doping in epitaxial Bi2Te3 layers JF - Advanced Electronic Materials JA - Adv. Electron. Mater. J1 - Online ISSN: 2199-160X VL - 1 SP - 1400007 PY - 2015/03/10

Domain matching epitaxy of cubic In2O3 on r-plane sapphire

@article{ author = { P. Vogt and A. Trampert and M. Ramsteiner and O. Bierwagen }, title = { Domain matching epitaxy of cubic In2O3 on r-plane sapphire }, journal = { Physica Status Solidi A }, volume = { 7 }, year = { 2015 }, pages = { 1433 } }

TY - JOUR AU - P. Vogt AU - A. Trampert AU - M. Ramsteiner AU - O. Bierwagen TI - Domain matching epitaxy of cubic In2O3 on r-plane sapphire JF - Physica Status Solidi A JA - Phys. Status Solidi A J1 - PSSA VL - 7 SP - 1433 PY - 2015/03/05

Coherent transport and manipulation of spins in indirect-exciton nanostructures

@article{ author = { A. Violante and R. Hey and P. V. Santos }, title = { Coherent transport and manipulation of spins in indirect-exciton nanostructures }, journal = { Physical Review B: Solid State }, volume = { 91 }, year = { 2015 }, pages = { 125302 } }

TY - JOUR AU - A. Violante AU - R. Hey AU - P. V. Santos TI - Coherent transport and manipulation of spins in indirect-exciton nanostructures JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 91 SP - 125302 PY - 2015/03/05

Electron tomography of (In,Ga)N insertions in GaN nanocolumns grown on semi-polar (11-22) GaN templates

@article{ author = { M. Niehle and A. Trampert and S. Albert and A. Bengoechea-Encabo and E. Calleja }, title = { Electron tomography of (In,Ga)N insertions in GaN nanocolumns grown on semi-polar (11-22) GaN templates }, journal = { APL Materials }, volume = { 3 }, year = { 2015 }, pages = { 036102 } }

TY - JOUR AU - M. Niehle AU - A. Trampert AU - S. Albert AU - A. Bengoechea-Encabo AU - E. Calleja TI - Electron tomography of (In,Ga)N insertions in GaN nanocolumns grown on semi-polar (11-22) GaN templates JF - APL Materials JA - APL Mater. J1 - APLM VL - 3 SP - 036102 PY - 2015/03/03

The competing oxide and sub-oxide formation in metal-oxide molecular beam epitaxy

@article{ author = { P. Vogt and O. Bierwagen }, title = { The competing oxide and sub-oxide formation in metal-oxide molecular beam epitaxy }, journal = { Applied Physics Letters }, volume = { 106 }, year = { 2015 }, pages = { 081910 } }

TY - JOUR AU - P. Vogt AU - O. Bierwagen TI - The competing oxide and sub-oxide formation in metal-oxide molecular beam epitaxy JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 106 SP - 081910 PY - 2015/02/25

Monitoring the formation of nanowires by line-of-sight quadrupole mass spectrometry: a comprehensive description of the temporal evolution of GaN nanowire ensembles

@article{ author = { S. Fernández-Garrido and J. K. Zettler and L. Geelhaar and O. Brandt }, title = { Monitoring the formation of nanowires by line-of-sight quadrupole mass spectrometry: a comprehensive description of the temporal evolution of GaN nanowire ensembles }, journal = { Nano Letters }, volume = { 15 }, year = { 2015 }, pages = { 1930 } }

TY - JOUR AU - S. Fernández-Garrido AU - J. K. Zettler AU - L. Geelhaar AU - O. Brandt TI - Monitoring the formation of nanowires by line-of-sight quadrupole mass spectrometry: a comprehensive description of the temporal evolution of GaN nanowire ensembles JF - Nano Letters JA - Nano Lett. J1 - VL - 15 SP - 1930 PY - 2015/02/11

Understanding Epitaxial Growth of Phase-Change Materials through Studies of the Local Structure

@article{ author = { R. Calarco and A.V. Kolobov and P. Fons and A. Giussani and P. Rodenbach and K. Perumal and M. Krbal }, title = { Understanding Epitaxial Growth of Phase-Change Materials through Studies of the Local Structure }, journal = { Spring-8 Scientific Reports }, volume = { 3 }, year = { 2015 }, pages = { 10 } }

TY - JOUR AU - R. Calarco AU - A.V. Kolobov AU - P. Fons AU - A. Giussani AU - P. Rodenbach AU - K. Perumal AU - M. Krbal TI - Understanding Epitaxial Growth of Phase-Change Materials through Studies of the Local Structure JF - Spring-8 Scientific Reports JA - Spring-8 Sci. Rep. J1 - VL - 3 SP - 10 PY - 2015/02/10

Deep level transient spectroscopy on light-emitting diodes based on (In,Ga)N/GaN nanowire ensembles

@article{ author = { M. Musolino and M. Meneghini and L. Scarparo and C. De Santi and A. Tahraoui and L. Geelhaar and E. Zanoni and H. Riechert }, title = { Deep level transient spectroscopy on light-emitting diodes based on (In,Ga)N/GaN nanowire ensembles }, journal = { Proceedings of SPIE }, volume = { 9363 }, year = { 2015 }, pages = { 936325 } }

TY - JOUR AU - M. Musolino AU - M. Meneghini AU - L. Scarparo AU - C. De Santi AU - A. Tahraoui AU - L. Geelhaar AU - E. Zanoni AU - H. Riechert TI - Deep level transient spectroscopy on light-emitting diodes based on (In,Ga)N/GaN nanowire ensembles JF - Proceedings of SPIE JA - Proc. SPIE J1 - VL - 9363 SP - 936325 PY - 2015/02/07

Compatibility of the selective area growth of GaN nanowires on AlN-buffered Si substrates with the operation of light emitting diodes

@article{ author = { M. Musolino and A. Tahraoui and S. Fernández-Garrido and O. Brandt and A. Trampert and L. Geelhaar and H. Riechert }, title = { Compatibility of the selective area growth of GaN nanowires on AlN-buffered Si substrates with the operation of light emitting diodes }, journal = { Nanotechnology }, volume = { 26 }, year = { 2015 }, pages = { 085605 } }

TY - JOUR AU - M. Musolino AU - A. Tahraoui AU - S. Fernández-Garrido AU - O. Brandt AU - A. Trampert AU - L. Geelhaar AU - H. Riechert TI - Compatibility of the selective area growth of GaN nanowires on AlN-buffered Si substrates with the operation of light emitting diodes JF - Nanotechnology JA - Nanotechnology J1 - NAN VL - 26 SP - 085605 PY - 2015/02/06

Spatially resolved polarized micro-photoluminescence study of GaAs nanowires with both zincblende and wurtzite phases

@article{ author = { A. Mukherjee and S. Ghosh and S. Breuer and U. Jahn and L. Geelhaar and H. T. Grahn }, title = { Spatially resolved polarized micro-photoluminescence study of GaAs nanowires with both zincblende and wurtzite phases }, journal = { Journal of Applied Physics }, volume = { 117 }, year = { 2015 }, pages = { 054308 } }

TY - JOUR AU - A. Mukherjee AU - S. Ghosh AU - S. Breuer AU - U. Jahn AU - L. Geelhaar AU - H. T. Grahn TI - Spatially resolved polarized micro-photoluminescence study of GaAs nanowires with both zincblende and wurtzite phases JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 117 SP - 054308 PY - 2015/02/05

Evolution of polytypism in GaAs nanowires during growth revealed by time-resolved in-situ X-ray diffraction

@article{ author = { P. Schroth and M. Köhl and J.-W. Hornung and E. Dimakis and C. Somaschini and L. Geelhaar and A. Biermanns and S. Bauer and S. Lazarev and U. Pietsch and T. Baumbach }, title = { Evolution of polytypism in GaAs nanowires during growth revealed by time-resolved in-situ X-ray diffraction }, journal = { Physical Review Letters }, volume = { 114 }, year = { 2015 }, pages = { 055504 } }

TY - JOUR AU - P. Schroth AU - M. Köhl AU - J.-W. Hornung AU - E. Dimakis AU - C. Somaschini AU - L. Geelhaar AU - A. Biermanns AU - S. Bauer AU - S. Lazarev AU - U. Pietsch AU - T. Baumbach TI - Evolution of polytypism in GaAs nanowires during growth revealed by time-resolved in-situ X-ray diffraction JF - Physical Review Letters JA - Phys. Rev. Lett. J1 - PRL VL - 114 SP - 055504 PY - 2015/02/05

Stochastic model for the fluctuation-limited reaction-diffusion kinetics in inhomogeneous media based on the nonlinear Smoluchowski equations

@article{ author = { K. K. Sabelfeld and O. Brandt and V. M. Kaganer }, title = { Stochastic model for the fluctuation-limited reaction-diffusion kinetics in inhomogeneous media based on the nonlinear Smoluchowski equations }, journal = { Journal of Mathematical Chemistry }, volume = { 53 }, year = { 2015 }, pages = { 651 } }

TY - JOUR AU - K. K. Sabelfeld AU - O. Brandt AU - V. M. Kaganer TI - Stochastic model for the fluctuation-limited reaction-diffusion kinetics in inhomogeneous media based on the nonlinear Smoluchowski equations JF - Journal of Mathematical Chemistry JA - J. Math. Chem. J1 - VL - 53 SP - 651 PY - 2015/02/02

Correlation of electrical and structural properties of single as-grown GaAs nanowires on Si (111) substrates

@article{ author = { G. Bussone and H. Schäfer-Eberwein and E. Dimakis and A. Biermanns and D. Carbone and A. Tahraoui and L. Geelhaar and P. HaringBolívar and T. U. Schülli and U. Pietsch }, title = { Correlation of electrical and structural properties of single as-grown GaAs nanowires on Si (111) substrates }, journal = { Nano Letters }, volume = { 15 }, year = { 2015 }, pages = { 981 } }

TY - JOUR AU - G. Bussone AU - H. Schäfer-Eberwein AU - E. Dimakis AU - A. Biermanns AU - D. Carbone AU - A. Tahraoui AU - L. Geelhaar AU - P. HaringBolívar AU - T. U. Schülli AU - U. Pietsch TI - Correlation of electrical and structural properties of single as-grown GaAs nanowires on Si (111) substrates JF - Nano Letters JA - Nano Lett. J1 - VL - 15 SP - 981 PY - 2015/01/29

Ab initio study of atomic disorder on As-rich GaAs(111)A surface

@article{ author = { O. Romanyuk and P. Mutombo and F. Grosse }, title = { Ab initio study of atomic disorder on As-rich GaAs(111)A surface }, journal = { Surface Science }, volume = { 641 }, year = { 2015 }, pages = { 330 } }

TY - JOUR AU - O. Romanyuk AU - P. Mutombo AU - F. Grosse TI - Ab initio study of atomic disorder on As-rich GaAs(111)A surface JF - Surface Science JA - Surf. Sci. J1 - SuSc VL - 641 SP - 330 PY - 2015/01/29

Molecular beam epitaxy growth and properties of Co2TiSi thin films on GaAs(001): The effect of growth temperature

@article{ author = { M. T. Dau and J. Herfort }, title = { Molecular beam epitaxy growth and properties of Co2TiSi thin films on GaAs(001): The effect of growth temperature }, journal = { Journal of Physics D: Applied Physics }, volume = { 48 }, year = { 2015 }, pages = { 025003 } }

TY - JOUR AU - M. T. Dau AU - J. Herfort TI - Molecular beam epitaxy growth and properties of Co2TiSi thin films on GaAs(001): The effect of growth temperature JF - Journal of Physics D: Applied Physics JA - J. Phys. D: Appl. Phys. J1 - JPD VL - 48 SP - 025003 PY - 2015/01/21

Indium oxide --- a transparent, wide-band gap semiconductor for (opto)electronics applications

@article{ author = { O. Bierwagen }, title = { Indium oxide --- a transparent, wide-band gap semiconductor for (opto)electronics applications }, journal = { Semiconductor Science and Technology }, volume = { 30 }, year = { 2015 }, pages = { 024001 } }

TY - JOUR AU - O. Bierwagen TI - Indium oxide --- a transparent, wide-band gap semiconductor for (opto)electronics applications JF - Semiconductor Science and Technology JA - Semicond. Sci. Technol. J1 - SST VL - 30 SP - 024001 PY - 2015/01/19

Cation vacancies and electrical compensation in Sb-doped thin-film SnO2 and ZnO

@article{ author = { E. Korhonen and F. Tuomisto and O. Bierwagen and M. E. White and J. S. Speck and Z. Galazka and H. Liu and N. Izyumskaya and V. Avrutin and U. Ozgur and H. Morkoc }, title = { Cation vacancies and electrical compensation in Sb-doped thin-film SnO2 and ZnO }, journal = { Semiconductor Science and Technology }, volume = { 30 }, year = { 2015 }, pages = { 024011 } }

TY - JOUR AU - E. Korhonen AU - F. Tuomisto AU - O. Bierwagen AU - M. E. White AU - J. S. Speck AU - Z. Galazka AU - H. Liu AU - N. Izyumskaya AU - V. Avrutin AU - U. Ozgur AU - H. Morkoc TI - Cation vacancies and electrical compensation in Sb-doped thin-film SnO2 and ZnO JF - Semiconductor Science and Technology JA - Semicond. Sci. Technol. J1 - SST VL - 30 SP - 024011 PY - 2015/01/19

Electrical performance of phase change memory cells with Ge3Sb2Te6 deposited by Molecular Beam Epitaxy

@article{ author = { J. E. Boschker and M. Boniardi and A. Redaelli and H. Riechert and R. Calarco }, title = { Electrical performance of phase change memory cells with Ge3Sb2Te6 deposited by Molecular Beam Epitaxy }, journal = { Applied Physics Letters }, volume = { 106 }, year = { 2015 }, pages = { 023117 } }

TY - JOUR AU - J. E. Boschker AU - M. Boniardi AU - A. Redaelli AU - H. Riechert AU - R. Calarco TI - Electrical performance of phase change memory cells with Ge3Sb2Te6 deposited by Molecular Beam Epitaxy JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 106 SP - 023117 PY - 2015/01/15

Time-Resolved In Situ Spectroscopy During Formation of the GaP/Si(100) Heterointerface

@article{ author = { O. Supplie and M.M. May and G. Steinbach and O. Romanyuk and F. Grosse and A. Naegelein and P. Kleinschmidt and S. Brueckner and T. Hannappel }, title = { Time-Resolved In Situ Spectroscopy During Formation of the GaP/Si(100) Heterointerface }, journal = { Journal of Chemical Physics Letters }, volume = { 6 }, year = { 2015 }, pages = { 464 } }

TY - JOUR AU - O. Supplie AU - M.M. May AU - G. Steinbach AU - O. Romanyuk AU - F. Grosse AU - A. Naegelein AU - P. Kleinschmidt AU - S. Brueckner AU - T. Hannappel TI - Time-Resolved In Situ Spectroscopy During Formation of the GaP/Si(100) Heterointerface JF - Journal of Chemical Physics Letters JA - J. Phys. Chem. Lett. J1 - VL - 6 SP - 464 PY - 2015/01/14

Giant multiferroic effects in topological GeTe-Sb2Te3 superlattices

@article{ author = { J. Tominaga and A. V. Kolobov and P. J. Fons and X. Wang and Y. Saito and T. Nakano and M. Hase and S. Murakami and J. Herfort and Y. Takagaki }, title = { Giant multiferroic effects in topological GeTe-Sb2Te3 superlattices }, journal = { Science and Technology of Advanced Materials }, volume = { 16 }, year = { 2015 }, pages = { 014402 } }

TY - JOUR AU - J. Tominaga AU - A. V. Kolobov AU - P. J. Fons AU - X. Wang AU - Y. Saito AU - T. Nakano AU - M. Hase AU - S. Murakami AU - J. Herfort AU - Y. Takagaki TI - Giant multiferroic effects in topological GeTe-Sb2Te3 superlattices JF - Science and Technology of Advanced Materials JA - Sci. Technol. Adv. Mater. J1 - doi:10.1088/issn.1468-6996 VL - 16 SP - 014402 PY - 2015/01/13

Coherent phonon modes of crystalline and amorphous Ge2Sb2Te5 thin films: A fingerprint of structure and bonding

@article{ author = { A. Shalini and Y. Liu and F. Katmis and W. Braun and G. P. Srivastavia and R. J. Hicken }, title = { Coherent phonon modes of crystalline and amorphous Ge2Sb2Te5 thin films: A fingerprint of structure and bonding }, journal = { Journal of Applied Physics }, volume = { 117 }, year = { 2015 }, pages = { 025306 } }

TY - JOUR AU - A. Shalini AU - Y. Liu AU - F. Katmis AU - W. Braun AU - G. P. Srivastavia AU - R. J. Hicken TI - Coherent phonon modes of crystalline and amorphous Ge2Sb2Te5 thin films: A fingerprint of structure and bonding JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 117 SP - 025306 PY - 2015/01/13

Non-destructive assessment of the polarity of GaN nanowire ensembles using low-energy electron diffraction and x-ray photoelectron diffraction

@article{ author = { O. Romanyuk and S. Fernández-Garrido and P. Jiricek and I. Bartos and L. Geelhaar and O. Brandt and T. Paskova }, title = { Non-destructive assessment of the polarity of GaN nanowire ensembles using low-energy electron diffraction and x-ray photoelectron diffraction }, journal = { Applied Physics Letters }, volume = { 106 }, year = { 2015 }, pages = { 021602 } }

TY - JOUR AU - O. Romanyuk AU - S. Fernández-Garrido AU - P. Jiricek AU - I. Bartos AU - L. Geelhaar AU - O. Brandt AU - T. Paskova TI - Non-destructive assessment of the polarity of GaN nanowire ensembles using low-energy electron diffraction and x-ray photoelectron diffraction JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 106 SP - 021602 PY - 2015/01/12

Laser-driven switching dynamics in phase change materials investigated by time-resolved x-ray absorption spectroscopy

@article{ author = { J. E. Boschker and R. N. Wang and V. Bragaglia and P. Fons and A. Giussani and L. Le Guyader and M. Beye and I. Radu and A.V. Kolobov and K. Holldack and R. Calarco }, title = { Laser-driven switching dynamics in phase change materials investigated by time-resolved x-ray absorption spectroscopy }, journal = { Phase Transitions }, volume = { 88 }, year = { 2015 }, pages = { 82 } }

TY - JOUR AU - J. E. Boschker AU - R. N. Wang AU - V. Bragaglia AU - P. Fons AU - A. Giussani AU - L. Le Guyader AU - M. Beye AU - I. Radu AU - A.V. Kolobov AU - K. Holldack AU - R. Calarco TI - Laser-driven switching dynamics in phase change materials investigated by time-resolved x-ray absorption spectroscopy JF - Phase Transitions JA - Phase Transit. J1 - PhTr VL - 88 SP - 82 PY - 2015/01/02

Polytypism in GaAs nanowires: Determination of the interplanar spacing of wurtzite GaAs by X-ray diffraction

@article{ author = { M. Koehl and P. Schroth and A. A. Minkevich and J.-W. Hornung and E. Dimakis and C. Somaschini and L. Geelhaar and T. Aschenbrenner and S. Lazarev and D. Grigoriev and U. Pietsch and T. Baumbach }, title = { Polytypism in GaAs nanowires: Determination of the interplanar spacing of wurtzite GaAs by X-ray diffraction }, journal = { Journal of Synchrotron Radiation }, volume = { 22 }, year = { 2015 }, pages = { 67 } }

TY - JOUR AU - M. Koehl AU - P. Schroth AU - A. A. Minkevich AU - J.-W. Hornung AU - E. Dimakis AU - C. Somaschini AU - L. Geelhaar AU - T. Aschenbrenner AU - S. Lazarev AU - D. Grigoriev AU - U. Pietsch AU - T. Baumbach TI - Polytypism in GaAs nanowires: Determination of the interplanar spacing of wurtzite GaAs by X-ray diffraction JF - Journal of Synchrotron Radiation JA - J. Synchrotron Rad. J1 - JSR VL - 22 SP - 67 PY - 2015/01/02

Real structure of lattice matched GaAs–Fe3Si core–shell nanowires

@article{ author = { B. Jenichen and M. Hilse and J. Herfort and A. Trampert }, title = { Real structure of lattice matched GaAs–Fe3Si core–shell nanowires }, journal = { Journal of Crystal Growth }, volume = { 410 }, year = { 2015 }, pages = { 1 } }

TY - JOUR AU - B. Jenichen AU - M. Hilse AU - J. Herfort AU - A. Trampert TI - Real structure of lattice matched GaAs–Fe3Si core–shell nanowires JF - Journal of Crystal Growth JA - J. Cryst. Growth J1 - JGC VL - 410 SP - 1 PY - 2015/01/02

An experimental-theoretical atomic-scale study – in situ analysis of III-V on Si(100) growth for hybrid solar cells

@article{ author = { O. Supplie and S. Brückner and O. Romanyuk and M.M. May and H. Döschner and P. Kleinschmidt and H. Stange and A. Dobrich and C. Höhn and H.-J. Lewerenz and F. Grosse and T. Hannappel }, title = { An experimental-theoretical atomic-scale study – in situ analysis of III-V on Si(100) growth for hybrid solar cells }, journal = { 2014 IEEE 40th Photovoltaic Specialist Conference (PVSC) }, volume = { 100 }, year = { 2015 }, pages = { 2797 } }

TY - JOUR AU - O. Supplie AU - S. Brückner AU - O. Romanyuk AU - M.M. May AU - H. Döschner AU - P. Kleinschmidt AU - H. Stange AU - A. Dobrich AU - C. Höhn AU - H.-J. Lewerenz AU - F. Grosse AU - T. Hannappel TI - An experimental-theoretical atomic-scale study – in situ analysis of III-V on Si(100) growth for hybrid solar cells JF - 2014 IEEE 40th Photovoltaic Specialist Conference (PVSC) JA - J1 - VL - 100 SP - 2797 PY - 2015/01/01